| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate measurement of fracture toughness of free standing diamond films by three-point bending tests with sharp pre-cracked specimens
|
Jiang, Z
|
|
2000
|
27-28 |
9-10 |
p. 1734-1738
5 p.
|
artikel
|
| 2 |
A chemical adsorption growth model for hot filament chemical vapor deposition diamond
|
Sun, Jianwei
|
|
2000
|
27-28 |
9-10 |
p. 1668-1672
5 p.
|
artikel
|
| 3 |
Adherent diamond coatings on cemented carbide substrates with different cobalt contents
|
Tang, W.
|
|
2001
|
27-28 |
9-10 |
p. 1700-1704
5 p.
|
artikel
|
| 4 |
A dynamic and thermodynamic model of diamond film growth
|
Yao, Wenjing
|
|
2000
|
27-28 |
9-10 |
p. 1664-1667
4 p.
|
artikel
|
| 5 |
AFM and XPS studies of a homoepitaxial diamond (001) surface nitrided using 500-eV N2 + ion beam
|
Kusunoki, I.
|
|
2001
|
27-28 |
9-10 |
p. 1676-1680
5 p.
|
artikel
|
| 6 |
Analysis of optical emission spectroscopy in diamond chemical vapor deposition
|
Liao, Y
|
|
2000
|
27-28 |
9-10 |
p. 1716-1721
6 p.
|
artikel
|
| 7 |
Analysis of piezoresistive properties of CVD-diamond films on silicon
|
Adamschik, M.
|
|
2001
|
27-28 |
9-10 |
p. 1670-1675
6 p.
|
artikel
|
| 8 |
A near-infrared diamond anti-reflective filter window
|
Ying, Xuantong
|
|
2000
|
27-28 |
9-10 |
p. 1730-1733
4 p.
|
artikel
|
| 9 |
Anisotropic etching of a fine column on a single crystal diamond
|
Nishibayashi, Yoshiki
|
|
2001
|
27-28 |
9-10 |
p. 1732-1735
4 p.
|
artikel
|
| 10 |
An under-gate triode structure field emission display with carbon nanotube emitters
|
Choi, Y.S.
|
|
2001
|
27-28 |
9-10 |
p. 1705-1708
4 p.
|
artikel
|
| 11 |
Atomic hydrogen-induced abstraction of adsorbed deuterium atoms on the covalent solid surfaces
|
Shimokawa, S.
|
|
2001
|
27-28 |
9-10 |
p. 1659-1664
6 p.
|
artikel
|
| 12 |
Author Index of Volume 10
|
|
|
2001
|
27-28 |
9-10 |
p. 1932-1938
7 p.
|
artikel
|
| 13 |
Bonding characterization and nano-indentation study of the amorphous SiC x N y films with and without hydrogen incorporation
|
Lo, H.C
|
|
2001
|
27-28 |
9-10 |
p. 1916-1920
5 p.
|
artikel
|
| 14 |
Broadband electronics for CVD-diamond detectors
|
Moritz, P.
|
|
2001
|
27-28 |
9-10 |
p. 1765-1769
5 p.
|
artikel
|
| 15 |
Calculation of the elastic-stressed state under concentrated loading in diamond-like–metal substrate system
|
Kondratyev, V.V.
|
|
2001
|
27-28 |
9-10 |
p. 1829-1832
4 p.
|
artikel
|
| 16 |
Carbon nanotube growth by rapid thermal processing
|
Wong, T.S.
|
|
2001
|
27-28 |
9-10 |
p. 1810-1813
4 p.
|
artikel
|
| 17 |
Carbon nitride films deposited from organic solutions by electrodeposition
|
Cao, Chuanbao
|
|
2000
|
27-28 |
9-10 |
p. 1786-1789
4 p.
|
artikel
|
| 18 |
Carbon transition efficiency and process cost in high-rate, large-area deposition of diamond films by DC arc plasma jet
|
Pan, W.X
|
|
2000
|
27-28 |
9-10 |
p. 1682-1686
5 p.
|
artikel
|
| 19 |
Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin films
|
Tanabe, K.
|
|
2001
|
27-28 |
9-10 |
p. 1652-1654
3 p.
|
artikel
|
| 20 |
Change of luminescence character of Ib diamonds with HPHT treatment
|
Kanda, H.
|
|
2001
|
27-28 |
9-10 |
p. 1665-1669
5 p.
|
artikel
|
| 21 |
Characteristics of SiCN films deposited by microwave plasma CVD on Si wafers with various buffer layer materials
|
Chang, Hui Lin
|
|
2001
|
27-28 |
9-10 |
p. 1910-1915
6 p.
|
artikel
|
| 22 |
Chemical bonding in carbon nitride films studied by X-ray spectroscopies
|
Zheng, W.T.
|
|
2001
|
27-28 |
9-10 |
p. 1897-1900
4 p.
|
artikel
|
| 23 |
Chemical bonding, structure, and hardness of carbon nitride thin films
|
Zheng, W.T.
|
|
2000
|
27-28 |
9-10 |
p. 1790-1794
5 p.
|
artikel
|
| 24 |
Contents
|
|
|
2001
|
27-28 |
9-10 |
p. iii-vii
nvt p.
|
artikel
|
| 25 |
CVD diamond for components and emitters
|
Davidson, J.
|
|
2001
|
27-28 |
9-10 |
p. 1736-1742
7 p.
|
artikel
|
| 26 |
CVD diamond sensors for charged particle detection
|
Krammer, M.
|
|
2001
|
27-28 |
9-10 |
p. 1778-1782
5 p.
|
artikel
|
| 27 |
Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet
|
Guo, H.
|
|
2000
|
27-28 |
9-10 |
p. 1673-1677
5 p.
|
artikel
|
| 28 |
Depth resolved stress investigations of c-BN thin films
|
Klett, A.
|
|
2001
|
27-28 |
9-10 |
p. 1875-1880
6 p.
|
artikel
|
| 29 |
Development of single- and multi-layered metallic films on diamond by ion beam-assisted deposition
|
Tjong, S.C.
|
|
2001
|
27-28 |
9-10 |
p. 1578-1583
6 p.
|
artikel
|
| 30 |
Diamond electro-mechanical micro devices — technology and performance
|
Kohn, E.
|
|
2001
|
27-28 |
9-10 |
p. 1684-1691
8 p.
|
artikel
|
| 31 |
Diamond films grown by a 60-kW microwave plasma chemical vapor deposition system
|
Tachibana, Takeshi
|
|
2001
|
27-28 |
9-10 |
p. 1569-1572
4 p.
|
artikel
|
| 32 |
Diamond-like carbon by pulsed laser deposition from a camphoric carbon target: effect of phosphorus incorporation
|
Mominuzzaman, Sharif Mohammad
|
|
2001
|
27-28 |
9-10 |
p. 1839-1842
4 p.
|
artikel
|
| 33 |
Diamond-like carbon films in multilayered interference coatings for IR optical elements
|
Kutsay, O.M.
|
|
2001
|
27-28 |
9-10 |
p. 1846-1849
4 p.
|
artikel
|
| 34 |
Diamond nucleation and growth under very low-pressure conditions
|
Kang, Jian
|
|
2000
|
27-28 |
9-10 |
p. 1691-1695
5 p.
|
artikel
|
| 35 |
Early stages of the HFCVD process on multi-vicinal silicon surfaces studied by electron microscopy probes (SEM, TEM)
|
Arnault, J.C
|
|
2001
|
27-28 |
9-10 |
p. 1612-1616
5 p.
|
artikel
|
| 36 |
Economical deposition of a large area of high quality diamond film by a high power DC arc plasma jet operating in a gas recycling mode
|
Lu, F.X
|
|
2000
|
27-28 |
9-10 |
p. 1655-1659
5 p.
|
artikel
|
| 37 |
Effect of adhesion strength of DLC to steel on the coating erosion mechanism
|
Trakhtenberg, I.Sh.
|
|
2001
|
27-28 |
9-10 |
p. 1824-1828
5 p.
|
artikel
|
| 38 |
Effect of chromium on the kinetics of the contact melting and the graphite-to-diamond transformation in the Co–Fe–C system
|
Novikov, N.V
|
|
2001
|
27-28 |
9-10 |
p. 1602-1606
5 p.
|
artikel
|
| 39 |
Effect of nitrogen doping on the electron field emission properties of chemical vapor deposited diamond films
|
Shih, Chuan-Feng
|
|
2000
|
27-28 |
9-10 |
p. 1591-1599
9 p.
|
artikel
|
| 40 |
Effect of substrate temperature on the selective deposition of diamond films
|
Zhang, Wenguang
|
|
2000
|
27-28 |
9-10 |
p. 1687-1690
4 p.
|
artikel
|
| 41 |
Electrical properties of chemical vapor deposition diamond films and electrical response to X-ray
|
Wang, Linjun
|
|
2000
|
27-28 |
9-10 |
p. 1617-1620
4 p.
|
artikel
|
| 42 |
Electron emission from diamond thin films deposited by microwave plasma-chemical vapor deposition method
|
Gu, Changzhi
|
|
2000
|
27-28 |
9-10 |
p. 1604-1607
4 p.
|
artikel
|
| 43 |
Electronic properties of carbon nanotubes with pentagon–heptagon pair defects
|
Hu, Hui-Fang
|
|
2001
|
27-28 |
9-10 |
p. 1818-1823
6 p.
|
artikel
|
| 44 |
Electron microscopy of interfaces in chemical vapour deposition diamond films on silicon
|
Wittorf, D
|
|
2000
|
27-28 |
9-10 |
p. 1696-1702
7 p.
|
artikel
|
| 45 |
Electron transport and electron field emission of nanodiamond synthesized by explosive detonation
|
He, Deyan
|
|
2000
|
27-28 |
9-10 |
p. 1600-1603
4 p.
|
artikel
|
| 46 |
Epitaxial growth of β-SiC on Si (100) by low energy ion beam deposition
|
Zhou, X.T.
|
|
2001
|
27-28 |
9-10 |
p. 1927-1931
5 p.
|
artikel
|
| 47 |
EPR and optical imaging of the growth-sector dependence of radiation-damage defect production in synthetic diamond
|
Watt, G.A.
|
|
2001
|
27-28 |
9-10 |
p. 1681-1683
3 p.
|
artikel
|
| 48 |
Field emission from metal-containing amorphous carbon composite films
|
Lau, S.P.
|
|
2001
|
27-28 |
9-10 |
p. 1727-1731
5 p.
|
artikel
|
| 49 |
Field emission properties of diamond and carbon nanotubes
|
Zhu, W.
|
|
2001
|
27-28 |
9-10 |
p. 1709-1713
5 p.
|
artikel
|
| 50 |
First stages of diamond nucleation on iridium buffer layers
|
Hörmann, F.
|
|
2001
|
27-28 |
9-10 |
p. 1617-1621
5 p.
|
artikel
|
| 51 |
Growth and characterization of hillock-free high quality homoepitaxial diamond films
|
Wang, Chunlei
|
|
2000
|
27-28 |
9-10 |
p. 1650-1654
5 p.
|
artikel
|
| 52 |
Growth, doping and applications of cubic boron nitride thin films
|
Ronning, C
|
|
2000
|
27-28 |
9-10 |
p. 1767-1773
7 p.
|
artikel
|
| 53 |
Growth of CVD heteroepitaxial diamond on silicon (001) and its electronic properties
|
He, X.C
|
|
2000
|
27-28 |
9-10 |
p. 1626-1631
6 p.
|
artikel
|
| 54 |
Growth of detector grade CVD diamond films and microscopic interpretation of their efficiency and charge collection distance in the normal and pumped states
|
Marinelli, M.
|
|
2001
|
27-28 |
9-10 |
p. 1783-1787
5 p.
|
artikel
|
| 55 |
Growth of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition
|
Sharda, T.
|
|
2001
|
27-28 |
9-10 |
p. 1592-1596
5 p.
|
artikel
|
| 56 |
Growth of {111}-oriented diamond on Pt/Ir/Pt substrate deposited on sapphire
|
Tachibana, Takeshi
|
|
2001
|
27-28 |
9-10 |
p. 1633-1636
4 p.
|
artikel
|
| 57 |
Highly efficient electron emitting diode fabricated with single-crystalline diamond
|
Ito, Toshimichi
|
|
2000
|
27-28 |
9-10 |
p. 1561-1568
8 p.
|
artikel
|
| 58 |
High quality CVD diamond for detection applications: structural characterization
|
Donato, M.G.
|
|
2001
|
27-28 |
9-10 |
p. 1788-1793
6 p.
|
artikel
|
| 59 |
High quality heteroepitaxial diamond films on silicon: recent progresses
|
Jiang, X.
|
|
2000
|
27-28 |
9-10 |
p. 1640-1645
6 p.
|
artikel
|
| 60 |
High resolution transmission electron microscopy study of the initial growth of diamond on silicon
|
Lin, T
|
|
2000
|
27-28 |
9-10 |
p. 1703-1707
5 p.
|
artikel
|
| 61 |
Imaging electron emission from diamond film surfaces: N-doped diamond vs. nanostructured diamond
|
Köck, F.A.M.
|
|
2001
|
27-28 |
9-10 |
p. 1714-1718
5 p.
|
artikel
|
| 62 |
Index
|
|
|
2000
|
27-28 |
9-10 |
p. 1806-1833
28 p.
|
artikel
|
| 63 |
Index
|
|
|
2000
|
27-28 |
9-10 |
p. 1800-1805
6 p.
|
artikel
|
| 64 |
Influence of d.c. substrate bias voltage on growth of cubic boron nitride films by radio frequency sputter
|
Deng, Jinxiang
|
|
2000
|
27-28 |
9-10 |
p. 1779-1781
3 p.
|
artikel
|
| 65 |
Large area high quality diamond film deposition by high power DC arc plasma jet operating at gas recycling mode
|
Lu, F.X.
|
|
2001
|
27-28 |
9-10 |
p. 1551-1558
8 p.
|
artikel
|
| 66 |
Laser plasma CVD diamond reactor
|
Bolshakov, A.P.
|
|
2001
|
27-28 |
9-10 |
p. 1559-1564
6 p.
|
artikel
|
| 67 |
Magnetoresistance effect of p-type diamond films in various doping levels at different temperatures
|
Wang, W.L
|
|
2000
|
27-28 |
9-10 |
p. 1612-1616
5 p.
|
artikel
|
| 68 |
Measurement of field emission from nitrogen-doped diamond films
|
Sowers, A.T
|
|
2000
|
27-28 |
9-10 |
p. 1569-1573
5 p.
|
artikel
|
| 69 |
Mechanical and tribological properties of diamond-like carbon films prepared on steel by ECR-CVD process
|
Li, K.Y.
|
|
2001
|
27-28 |
9-10 |
p. 1855-1861
7 p.
|
artikel
|
| 70 |
Mechanical properties of a-C:H multilayer films
|
Qi, J.
|
|
2001
|
27-28 |
9-10 |
p. 1833-1838
6 p.
|
artikel
|
| 71 |
Mechanical properties of DLC films prepared in acetylene and methane plasmas using electron cyclotron resonance microwave plasma chemical vapor deposition
|
Lai, K.H.
|
|
2001
|
27-28 |
9-10 |
p. 1862-1867
6 p.
|
artikel
|
| 72 |
Mechanism of diamond epitaxial growth on silicon
|
Ishigaki, N
|
|
2000
|
27-28 |
9-10 |
p. 1646-1649
4 p.
|
artikel
|
| 73 |
Micromechanical and microtribological properties of BCN thin films near the B4C composition deposited by r.f. magnetron sputtering
|
Martı́nez, E.
|
|
2001
|
27-28 |
9-10 |
p. 1892-1896
5 p.
|
artikel
|
| 74 |
Micro-Raman analysis of the cross-section of a diamond film prepared by hot-filament chemical vapor deposition
|
Wang, G.Z
|
|
2000
|
27-28 |
9-10 |
p. 1712-1715
4 p.
|
artikel
|
| 75 |
Micro-Raman scattering and photoluminescence study of boron-doped diamond films
|
Wang, Yuguang
|
|
2000
|
27-28 |
9-10 |
p. 1708-1711
4 p.
|
artikel
|
| 76 |
Modification of emission properties of diamond films due to surface treatment process
|
Lin, I-Nan
|
|
2000
|
27-28 |
9-10 |
p. 1574-1581
8 p.
|
artikel
|
| 77 |
MPACVD-diamond windows for high-power and long-pulse millimeter wave transmission
|
Thumm, Manfred
|
|
2001
|
27-28 |
9-10 |
p. 1692-1699
8 p.
|
artikel
|
| 78 |
Near-field cathodoluminescence of nanoscopic diamond properties
|
Heiderhoff, R.
|
|
2001
|
27-28 |
9-10 |
p. 1647-1651
5 p.
|
artikel
|
| 79 |
New directions in structuring and electrochemical applications of boron-doped diamond thin films
|
Fujishima, Akira
|
|
2001
|
27-28 |
9-10 |
p. 1799-1803
5 p.
|
artikel
|
| 80 |
Nucleation and growth of diamond films on aluminum nitride by hot filament chemical vapor deposition
|
Wang, W.L
|
|
2000
|
27-28 |
9-10 |
p. 1660-1663
4 p.
|
artikel
|
| 81 |
Numerical simulation of I–V characteristics of carbon nanotube based tunneling systems
|
He, Hong-Bo
|
|
2001
|
27-28 |
9-10 |
p. 1814-1817
4 p.
|
artikel
|
| 82 |
Optical diagnostics of an atmospheric pressure diamond-depositing DC plasma reactor
|
Zhao, Maosheng
|
|
2001
|
27-28 |
9-10 |
p. 1565-1568
4 p.
|
artikel
|
| 83 |
Optical, thermal and mechanical properties of CVD diamond
|
Coe, S.E
|
|
2000
|
27-28 |
9-10 |
p. 1726-1729
4 p.
|
artikel
|
| 84 |
Pattern metallization on diamond thick film substrate
|
Wang, Jiayu
|
|
2000
|
27-28 |
9-10 |
p. 1632-1635
4 p.
|
artikel
|
| 85 |
Potential applications of surface channel diamond field-effect transistors
|
Umezawa, Hitoshi
|
|
2001
|
27-28 |
9-10 |
p. 1743-1748
6 p.
|
artikel
|
| 86 |
Preface
|
Lu, F.X
|
|
2000
|
27-28 |
9-10 |
p. vii-
1 p.
|
artikel
|
| 87 |
Preparation and performance of diamond coatings on cemented carbide inserts with cobalt boride interlayers
|
Tang, W
|
|
2000
|
27-28 |
9-10 |
p. 1744-1748
5 p.
|
artikel
|
| 88 |
Preparation of high quality transparent chemical vapor deposition diamond films by a DC arc plasma jet method
|
Guofang, Zhong
|
|
2000
|
27-28 |
9-10 |
p. 1678-1681
4 p.
|
artikel
|
| 89 |
Preparation of nitrogen-rich CN x films with inductively coupled plasma CVD and pulsed laser deposition
|
Buliř, J.
|
|
2001
|
27-28 |
9-10 |
p. 1901-1909
9 p.
|
artikel
|
| 90 |
Pre-treatment for diamond coatings on free-shape WC–Co tools
|
Zhang, Z.M.
|
|
2000
|
27-28 |
9-10 |
p. 1749-1752
4 p.
|
artikel
|
| 91 |
Proceedings of the 7th International Conference on New Diamond Science and Technology (ICNDST-7), City University of Hong Kong, Hong Kong SAR, P.R. China, 23–28 July 2000
|
Lee, S.T.
|
|
2001
|
27-28 |
9-10 |
p. ix-x
nvt p.
|
artikel
|
| 92 |
Properties of diamond-like carbon films on crystalline quartz and lithium niobate
|
Zhang, Q.
|
|
2001
|
27-28 |
9-10 |
p. 1843-1845
3 p.
|
artikel
|
| 93 |
Recent studies on diamond surfaces
|
Wang, Y.M.
|
|
2000
|
27-28 |
9-10 |
p. 1582-1590
9 p.
|
artikel
|
| 94 |
Relationships between surface character and electrochemical processes on diamond electrodes: dual roles of surface termination and near-surface hydrogen
|
Tryk, D.A.
|
|
2001
|
27-28 |
9-10 |
p. 1804-1809
6 p.
|
artikel
|
| 95 |
Residual stresses in chemical vapour deposited diamond films
|
Fan, Qi Hua
|
|
2000
|
27-28 |
9-10 |
p. 1739-1743
5 p.
|
artikel
|
| 96 |
Selective deposition of diamond films on insulators by selective seeding with a double-layer mask
|
Liu, H.W.
|
|
2001
|
27-28 |
9-10 |
p. 1573-1577
5 p.
|
artikel
|
| 97 |
Similarity in field electron emission from nanocrystalline diamond and related materials
|
Frolov, V.D
|
|
2001
|
27-28 |
9-10 |
p. 1719-1726
8 p.
|
artikel
|
| 98 |
Spherical nanometer-sized diamond obtained from detonation
|
Chen, P.W
|
|
2000
|
27-28 |
9-10 |
p. 1722-1725
4 p.
|
artikel
|
| 99 |
Structural modification of polymeric amorphous hydrogenated carbon films induced by high energetic He+ irradiation and thermal annealing
|
Zhang, Qing
|
|
2000
|
27-28 |
9-10 |
p. 1758-1761
4 p.
|
artikel
|
| 100 |
Structure analysis of cBN films prepared by DC jet plasma CVD from an Ar–N2–BF3–H2 gas system
|
Zhang, W.J.
|
|
2001
|
27-28 |
9-10 |
p. 1881-1885
5 p.
|
artikel
|
| 101 |
Study on metal-doped diamond-like carbon films synthesized by cathodic arc evaporation
|
Wang, Da-Yung
|
|
2000
|
27-28 |
9-10 |
p. 1762-1766
5 p.
|
artikel
|
| 102 |
Study on SiC layers synthesized with carbon ion beam at low substrate temperature
|
Yan, H
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|
2000
|
27-28 |
9-10 |
p. 1795-1798
4 p.
|
artikel
|
| 103 |
Subject Index of Volume 10/9-10
|
|
|
2001
|
27-28 |
9-10 |
p. 1939-1945
7 p.
|
artikel
|
| 104 |
Surfaces of undoped and boron doped polycrystalline diamond films influenced by negative DC bias voltage
|
Xia, Yiben
|
|
2000
|
27-28 |
9-10 |
p. 1636-1639
4 p.
|
artikel
|
| 105 |
Synthesis and characterization of cubic boron nitride films: substrate bias and ion flux effects
|
Li, Quan
|
|
2001
|
27-28 |
9-10 |
p. 1886-1891
6 p.
|
artikel
|
| 106 |
Synthesis of highly oriented CVD diamond films by ultra short bias enhanced nucleation step
|
Barrat, S.
|
|
2001
|
27-28 |
9-10 |
p. 1637-1642
6 p.
|
artikel
|
| 107 |
Synthesis of nanocrystalline diamond films using microwave plasma CVD
|
Yoshikawa, Hiromichi
|
|
2001
|
27-28 |
9-10 |
p. 1588-1591
4 p.
|
artikel
|
| 108 |
Temporal response of UV sensors made of highly oriented diamond films by 193 and 313 nm laser pulses
|
Hayashi, Kazushi
|
|
2001
|
27-28 |
9-10 |
p. 1794-1798
5 p.
|
artikel
|
| 109 |
The cutting performance of diamond and DLC-coated cutting tools
|
Dai, Mingjiang
|
|
2000
|
27-28 |
9-10 |
p. 1753-1757
5 p.
|
artikel
|
| 110 |
The CVD growth of micro crystals of diamond
|
Chung, Hsiao-Kuo
|
|
2001
|
27-28 |
9-10 |
p. 1584-1587
4 p.
|
artikel
|
| 111 |
The different characteristics of boron and nitrogen atoms/ions on silicon (001) substrate and their effect on boron nitride growth
|
Zhang, R.Q
|
|
2000
|
27-28 |
9-10 |
p. 1774-1778
5 p.
|
artikel
|
| 112 |
The effect of metal–solvent properties on the alteration of specific zones on a carbon phase diagram
|
Potemkin, Andrei
|
|
2001
|
27-28 |
9-10 |
p. 1597-1601
5 p.
|
artikel
|
| 113 |
The effect of nitrogen addition on field emission of diamond-like carbon films
|
Ma, Huizhong
|
|
2000
|
27-28 |
9-10 |
p. 1608-1611
4 p.
|
artikel
|
| 114 |
The high temperature–high pressure sintering of diamond–Cu–Si–B composite
|
de Azevedo, Márcia Giardinieri
|
|
2001
|
27-28 |
9-10 |
p. 1607-1611
5 p.
|
artikel
|
| 115 |
The introducing of fluorine into the deposition of BN: a successful method to obtain high-quality, thick cBN films with low residual stress
|
Matsumoto, Seiichiro
|
|
2001
|
27-28 |
9-10 |
p. 1868-1874
7 p.
|
artikel
|
| 116 |
Theoretical analysis of ion bombardment roles in the bias-enhanced nucleation process of CVD diamond
|
Wang, B.B.
|
|
2001
|
27-28 |
9-10 |
p. 1622-1626
5 p.
|
artikel
|
| 117 |
Thermoanalysis and XRD study of crystallization behaviors of amorphous carbon nitride
|
Xiao, Xing Cheng
|
|
2000
|
27-28 |
9-10 |
p. 1782-1785
4 p.
|
artikel
|
| 118 |
The role of methyl radicals and acetylene in [100] vs. [111] diamond growth
|
D'Evelyn, Mark P
|
|
2001
|
27-28 |
9-10 |
p. 1627-1632
6 p.
|
artikel
|
| 119 |
The search for donors in diamond
|
Kalish, R.
|
|
2001
|
27-28 |
9-10 |
p. 1749-1755
7 p.
|
artikel
|
| 120 |
The use of CVD-diamond for heavy-ion detection
|
Berdermann, E
|
|
2001
|
27-28 |
9-10 |
p. 1770-1777
8 p.
|
artikel
|
| 121 |
Unusual RHEED patterns of a homoepitaxial diamond (001) surface explained by surface tilt
|
Takami, T.
|
|
2001
|
27-28 |
9-10 |
p. 1655-1658
4 p.
|
artikel
|
| 122 |
Using ion implantation to dope diamond — an update on selected issues
|
Prins, Johan F.
|
|
2001
|
27-28 |
9-10 |
p. 1756-1764
9 p.
|
artikel
|
| 123 |
UV and visible photoconductivity of undoped diamond films: morphology and related electrical transport phenomena
|
Pereira, L
|
|
2000
|
27-28 |
9-10 |
p. 1621-1625
5 p.
|
artikel
|
| 124 |
Vibrational sum-frequency observation of synthetic diamonds
|
Takaba, Hiroyuki
|
|
2001
|
27-28 |
9-10 |
p. 1643-1646
4 p.
|
artikel
|
| 125 |
Wear-resistant multilayered diamond-like carbon coating prepared by pulse biased arc ion plating
|
Huang, R.F.
|
|
2001
|
27-28 |
9-10 |
p. 1850-1854
5 p.
|
artikel
|
| 126 |
XPS studies of amorphous SiCN thin films prepared by nitrogen ion-assisted pulsed-laser deposition of SiC target
|
Yamamoto, Kazuhiro
|
|
2001
|
27-28 |
9-10 |
p. 1921-1926
6 p.
|
artikel
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