| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio study of hydrocarbons on diamond (111)
|
Larsson, K.
|
|
1993
|
27-28 |
5-7 |
p. 949-951
3 p.
|
artikel
|
| 2 |
Adhesion improvement of diamond films on steel subtrates using chromium nitride interlayers
|
Glozman, O.
|
|
1997
|
27-28 |
5-7 |
p. 796-801
6 p.
|
artikel
|
| 3 |
Aerosol doping of flame-grown diamond films
|
Doverspike, Kathleen
|
|
1993
|
27-28 |
5-7 |
p. 1078-1082
5 p.
|
artikel
|
| 4 |
AES and XPS observations of HFCVD diamond deposition on monocrystalline (111) copper
|
Constant, L.
|
|
1997
|
27-28 |
5-7 |
p. 664-667
4 p.
|
artikel
|
| 5 |
A multilayer approach to high adhesion diamond-like carbon coatings on titanium
|
Dumkum, C.
|
|
1997
|
27-28 |
5-7 |
p. 802-806
5 p.
|
artikel
|
| 6 |
Analysis and modeling of diamond heterogeneous nucleation kinetics
|
Ascarelli, P.
|
|
1993
|
27-28 |
5-7 |
p. 990-996
7 p.
|
artikel
|
| 7 |
Analysis of chemical-vapour-deposited diamond grain boundaries using transmission electron microscopy and parallel electron energy loss spectroscopy in a scanning transmission electron microscope
|
Fallon, P.J.
|
|
1993
|
27-28 |
5-7 |
p. 1004-1011
8 p.
|
artikel
|
| 8 |
Application of diamond substrates for advanced high density packaging
|
Eden, Richard C.
|
|
1993
|
27-28 |
5-7 |
p. 1051-1058
8 p.
|
artikel
|
| 9 |
A simple and sensitive way to determine carbon film thickness
|
Bentzon, M.D.
|
|
1993
|
27-28 |
5-7 |
p. 893-897
5 p.
|
artikel
|
| 10 |
A two-step process for the formation of a Mo2C contact on polycrystalline diamond films
|
Lucazeau, E.
|
|
1997
|
27-28 |
5-7 |
p. 843-846
4 p.
|
artikel
|
| 11 |
Author index
|
|
|
1993
|
27-28 |
5-7 |
p. 1115-1116
2 p.
|
artikel
|
| 12 |
Author index
|
|
|
1997
|
27-28 |
5-7 |
p. 915-918
4 p.
|
artikel
|
| 13 |
Behaviour of Co binder phase during diamond deposition on WCCo substrate
|
Park, B.S.
|
|
1993
|
27-28 |
5-7 |
p. 910-917
8 p.
|
artikel
|
| 14 |
Biased enhanced nucleation of diamond on metals: an OES and electrical investigation
|
Whitfield, Michael D.
|
|
1997
|
27-28 |
5-7 |
p. 658-663
6 p.
|
artikel
|
| 15 |
Calorimetric absorption spectroscopy and photoluminescence study of defects in diamond
|
Bilodeau, T.G.
|
|
1993
|
27-28 |
5-7 |
p. 699-703
5 p.
|
artikel
|
| 16 |
Capacitance-voltage measurements on metal-SiO2-boron-doped homoepitaxial diamond
|
Inushima, T.
|
|
1997
|
27-28 |
5-7 |
p. 852-855
4 p.
|
artikel
|
| 17 |
Carrier transport mechanisms through the metal/p-type diamond semiconductor interface
|
Koide, Y.
|
|
1997
|
27-28 |
5-7 |
p. 847-851
5 p.
|
artikel
|
| 18 |
Catalytic interaction of Fe, Ni and Pt with diamond films: patterning applications
|
Ralchenko, V.G.
|
|
1993
|
27-28 |
5-7 |
p. 904-909
6 p.
|
artikel
|
| 19 |
Cathodoluminescence of epitaxial diamond films
|
Fujimori, Naoji
|
|
1993
|
27-28 |
5-7 |
p. 762-767
6 p.
|
artikel
|
| 20 |
Cathodoluminescence spectroscopy of synthetic diamond films
|
Marinelli, M.
|
|
1997
|
27-28 |
5-7 |
p. 717-720
4 p.
|
artikel
|
| 21 |
C-BN thin film formation in a hybrid r.f.-PLD technique
|
Klotzbücher, T.
|
|
1997
|
27-28 |
5-7 |
p. 599-603
5 p.
|
artikel
|
| 22 |
Characterization and optimization of mid-frequency plasma-enhanced chemical vapour deposited carbon films using response surface methodology
|
Wächter, R.
|
|
1997
|
27-28 |
5-7 |
p. 537-541
5 p.
|
artikel
|
| 23 |
Characterization of diamond films deposited using C3H6OxH2 gas mixtures
|
Chen, Chia-Fu
|
|
1993
|
27-28 |
5-7 |
p. 732-736
5 p.
|
artikel
|
| 24 |
Characterization of diamond films for optical coatings
|
Ko, Hsien-Wen
|
|
1993
|
27-28 |
5-7 |
p. 694-698
5 p.
|
artikel
|
| 25 |
Characterization of laser-irradiated surfaces of a polycrystalline diamond film with an atomic force microscope
|
Bögli, U.
|
|
1993
|
27-28 |
5-7 |
p. 924-927
4 p.
|
artikel
|
| 26 |
Comparison of the electric properties of single-crystal and polycrystalline diamond by hall effect and capacitance-voltage measurements
|
von Windheim, J.A.
|
|
1993
|
27-28 |
5-7 |
p. 841-846
6 p.
|
artikel
|
| 27 |
Comparison of the surface structure of carbon films deposited by different methods
|
Niedzielski, P.
|
|
1997
|
27-28 |
5-7 |
p. 721-724
4 p.
|
artikel
|
| 28 |
Compressive stress induced formation of cubic boron nitride
|
McKenzie, D.R.
|
|
1993
|
27-28 |
5-7 |
p. 970-976
7 p.
|
artikel
|
| 29 |
Conduction in ion-implanted single-crystal diamond
|
Hunn, J.D.
|
|
1993
|
27-28 |
5-7 |
p. 847-851
5 p.
|
artikel
|
| 30 |
Conference calendar
|
|
|
1993
|
27-28 |
5-7 |
p. 1125-1127
3 p.
|
artikel
|
| 31 |
Conference calendar
|
|
|
1997
|
27-28 |
5-7 |
p. 913-914
2 p.
|
artikel
|
| 32 |
Correlation of interface chemistry to electrical properties of metal contacts on diamond
|
Tachibana, T.
|
|
1993
|
27-28 |
5-7 |
p. 963-969
7 p.
|
artikel
|
| 33 |
Cubic boron nitride thin films by tuned r.f. magnetron sputtering
|
Gimeno, S.
|
|
1997
|
27-28 |
5-7 |
p. 604-607
4 p.
|
artikel
|
| 34 |
Cumulative author index
|
|
|
1993
|
27-28 |
5-7 |
p. 1129-1132
4 p.
|
artikel
|
| 35 |
Cumulative subject index
|
|
|
1993
|
27-28 |
5-7 |
p. 1133-1147
15 p.
|
artikel
|
| 36 |
CVD diamond growth mechanisms as identified by surface topography
|
van Enckevort, W.J.P.
|
|
1993
|
27-28 |
5-7 |
p. 997-1003
7 p.
|
artikel
|
| 37 |
Defects in chemically vapour-deposited diamond films studied by electron spin resonance and Raman spectroscopy
|
Fabisiak, K.
|
|
1993
|
27-28 |
5-7 |
p. 722-727
6 p.
|
artikel
|
| 38 |
Degenerate four-wave mixing diagnostics of atmospheric pressure diamond deposition
|
Owano, T.G.
|
|
1993
|
27-28 |
5-7 |
p. 661-666
6 p.
|
artikel
|
| 39 |
Degradation mechanisms of passivated and unpassivated diamond thermistors
|
Chalker, P.R.
|
|
1993
|
27-28 |
5-7 |
p. 1100-1106
7 p.
|
artikel
|
| 40 |
Deposition mechanisms for promoting sp3 bonding in diamond-like carbon
|
Robertson, J.
|
|
1993
|
27-28 |
5-7 |
p. 984-989
6 p.
|
artikel
|
| 41 |
Deposition of DLC films in CH4/Ne and CH4/Kr r.f. plasmas
|
Mutsukura, Nobuki
|
|
1997
|
27-28 |
5-7 |
p. 547-550
4 p.
|
artikel
|
| 42 |
Determination of the optical constants of fine grained diamond layers on silicon substrates using curve-fitting procedures
|
Stenzel, O.
|
|
1993
|
27-28 |
5-7 |
p. 704-707
4 p.
|
artikel
|
| 43 |
Determination of the “overall” nucleation density on tungsten: a new treatment of the data
|
Polini, R.
|
|
1993
|
27-28 |
5-7 |
p. 952-957
6 p.
|
artikel
|
| 44 |
Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers
|
Noda, H.
|
|
1997
|
27-28 |
5-7 |
p. 865-868
4 p.
|
artikel
|
| 45 |
Device properties of homoepitaxially grown diamond
|
Landstrass, M.I.
|
|
1993
|
27-28 |
5-7 |
p. 1033-1037
5 p.
|
artikel
|
| 46 |
Diamond deposition by atmospheric pressure induction plasma: effects of impinging jet fluid mechanics on film formation
|
Girshick, S.L.
|
|
1993
|
27-28 |
5-7 |
p. 1090-1095
6 p.
|
artikel
|
| 47 |
Diamond device delineation via excimer laser patterning
|
Johnston, C.
|
|
1993
|
27-28 |
5-7 |
p. 829-834
6 p.
|
artikel
|
| 48 |
Diamond fibre metal matrix composites
|
Meaden, G.
|
|
1997
|
27-28 |
5-7 |
p. 898-901
4 p.
|
artikel
|
| 49 |
Diamond fibres by a hot filament CVD process
|
Griffith, P.W.
|
|
1997
|
27-28 |
5-7 |
p. 822-825
4 p.
|
artikel
|
| 50 |
Diamond-infiltrated carbon-carbon composites
|
Ting, J.-M.
|
|
1993
|
27-28 |
5-7 |
p. 1069-1077
9 p.
|
artikel
|
| 51 |
Diamond-like carbon metal-semiconductor-metal switches for active matrix displays
|
Egret, S.
|
|
1997
|
27-28 |
5-7 |
p. 879-883
5 p.
|
artikel
|
| 52 |
Diamond-metal composite coatings on cemented-carbide tools
|
Tsai, C.
|
|
1993
|
27-28 |
5-7 |
p. 617-620
4 p.
|
artikel
|
| 53 |
Diamond metal-semiconductor-metal ultraviolet photodetectors
|
Binari, S.C.
|
|
1993
|
27-28 |
5-7 |
p. 1020-1023
4 p.
|
artikel
|
| 54 |
Diamond nucleation on silicon during bias treatment in chemical vapour deposition as analysed by electron microscopy
|
Stammler, M.
|
|
1997
|
27-28 |
5-7 |
p. 747-751
5 p.
|
artikel
|
| 55 |
Diamond radiation detectors
|
Kania, D.R.
|
|
1993
|
27-28 |
5-7 |
p. 1012-1019
8 p.
|
artikel
|
| 56 |
Diamond synthesis on a metal substrate
|
Kawarada, M.
|
|
1993
|
27-28 |
5-7 |
p. 1083-1089
7 p.
|
artikel
|
| 57 |
Diamond windows for IR applications in adverse environments
|
Klein, Claude A.
|
|
1993
|
27-28 |
5-7 |
p. 1024-1032
9 p.
|
artikel
|
| 58 |
Distribution of the cobalt-related luminescence center in HPHT diamond
|
Kanda, H.
|
|
1997
|
27-28 |
5-7 |
p. 708-711
4 p.
|
artikel
|
| 59 |
Effect of boron incorporation on the “quality” of MPCVD diamond films
|
Gheeraert, E.
|
|
1993
|
27-28 |
5-7 |
p. 742-745
4 p.
|
artikel
|
| 60 |
Effect of boron incorporation on the structure of polycrystalline diamond films
|
Brunet, F.
|
|
1997
|
27-28 |
5-7 |
p. 774-777
4 p.
|
artikel
|
| 61 |
Effect of negative bias voltage on a-C:H films deposited in electron cyclotron resonance plasma
|
Zarrabian, M.
|
|
1997
|
27-28 |
5-7 |
p. 542-546
5 p.
|
artikel
|
| 62 |
Effect of substrate pretreatment on diamond deposition
|
Maeda, Hideaki
|
|
1993
|
27-28 |
5-7 |
p. 758-761
4 p.
|
artikel
|
| 63 |
Effects of diamond-like hydrocarbon films on rolling contact fatigue of bearing steels
|
Wei, Ronghua
|
|
1993
|
27-28 |
5-7 |
p. 898-903
6 p.
|
artikel
|
| 64 |
Elastic characteristics of diamond-like carbon coatings
|
Strel'nitskij, V.E.
|
|
1993
|
27-28 |
5-7 |
p. 869-872
4 p.
|
artikel
|
| 65 |
Elastic properties of polycrystalline cubic boron nitride and diamond by dynamic resonance measurements
|
D'Evelyn, Mark P.
|
|
1997
|
27-28 |
5-7 |
p. 812-816
5 p.
|
artikel
|
| 66 |
Elastic properties of thin polycrystalline diamond films
|
Werner, M.
|
|
1993
|
27-28 |
5-7 |
p. 939-942
4 p.
|
artikel
|
| 67 |
Elastic scattering of light and reflectivity development during low pressure diamond film growth
|
Mathis, B.S.
|
|
1993
|
27-28 |
5-7 |
p. 718-721
4 p.
|
artikel
|
| 68 |
Electrical conduction in polycrystalline diamond and the effects of UV irradiation
|
Gonon, P.
|
|
1997
|
27-28 |
5-7 |
p. 860-864
5 p.
|
artikel
|
| 69 |
Electrical conduction mechanisms in polycrystalline chemically vapour-deposited diamond films
|
Sugino, Takashi
|
|
1993
|
27-28 |
5-7 |
p. 797-802
6 p.
|
artikel
|
| 70 |
Electrical properties of diamond-like CSi heterojunctions manufactured under ultraclean conditions
|
Beck, R.B.
|
|
1993
|
27-28 |
5-7 |
p. 788-792
5 p.
|
artikel
|
| 71 |
Electrical properties of high quality diamond films
|
Pan, L.S.
|
|
1993
|
27-28 |
5-7 |
p. 820-824
5 p.
|
artikel
|
| 72 |
Electrical properties of undoped large-grain and small-grain diamond films
|
Huang, Bohr-ran
|
|
1993
|
27-28 |
5-7 |
p. 812-815
4 p.
|
artikel
|
| 73 |
Electron emission characteristics of metal/diamond field emitters
|
Sugino, Takashi
|
|
1997
|
27-28 |
5-7 |
p. 889-892
4 p.
|
artikel
|
| 74 |
Electron energy loss study of diamond-like and amorphous carbon films
|
Maydell, E.A.
|
|
1993
|
27-28 |
5-7 |
p. 873-878
6 p.
|
artikel
|
| 75 |
Electronic and atomic structure of undoped and doped ta-C films
|
Ronning, C.
|
|
1997
|
27-28 |
5-7 |
p. 830-834
5 p.
|
artikel
|
| 76 |
Electronic and structural properties of the interface between c-Si(111) and diamond-like carbon
|
Schäfer, J.
|
|
1997
|
27-28 |
5-7 |
p. 730-735
6 p.
|
artikel
|
| 77 |
Enhancing low field electron emission from polycrystalline diamond
|
Baral, Bhaswar
|
|
1997
|
27-28 |
5-7 |
p. 869-873
5 p.
|
artikel
|
| 78 |
Etching of graphite and diamond by thermal energy hydrogen atoms
|
Donnelly, C.M.
|
|
1997
|
27-28 |
5-7 |
p. 787-790
4 p.
|
artikel
|
| 79 |
Evaluation of MPCVD diamond film adhesion on hard metal substrates by micro Raman spectroscopy
|
Fernandes, A.
|
|
1997
|
27-28 |
5-7 |
p. 769-773
5 p.
|
artikel
|
| 80 |
Fabrication of diamond thin-film thermistors for high-temperature applications
|
Bade, J.P.
|
|
1993
|
27-28 |
5-7 |
p. 816-819
4 p.
|
artikel
|
| 81 |
Fabrication of integrated diamond cantilevers with tips for SPM applications
|
Kulisch, W.
|
|
1997
|
27-28 |
5-7 |
p. 906-911
6 p.
|
artikel
|
| 82 |
Fabrication process development and characterization of polycrystalline diamond film resistors
|
Edwards, L.M.
|
|
1993
|
27-28 |
5-7 |
p. 808-811
4 p.
|
artikel
|
| 83 |
Factors affecting the fracture strength and Young's modulus of CVD diamond-coated fibres
|
Kalaugher, E.
|
|
1997
|
27-28 |
5-7 |
p. 826-829
4 p.
|
artikel
|
| 84 |
Free-standing white diamond for thermal and optical applications
|
Lu, Grant
|
|
1993
|
27-28 |
5-7 |
p. 1064-1068
5 p.
|
artikel
|
| 85 |
Gap density of states in CVD diamond films from photoconductivity and photoluminescence data
|
Rossi, M.C.
|
|
1997
|
27-28 |
5-7 |
p. 712-716
5 p.
|
artikel
|
| 86 |
Growth and application of cubic SiC
|
Matsunami, Hiroyuki
|
|
1993
|
27-28 |
5-7 |
p. 1043-1050
8 p.
|
artikel
|
| 87 |
Growth and characterisation of boron nitride films: layer sequence and phase identification
|
Plass, M.F.
|
|
1997
|
27-28 |
5-7 |
p. 594-598
5 p.
|
artikel
|
| 88 |
Hard a-C(N):H films obtained from plasma decomposition of methylamine-containing mixtures
|
Lacerda, M.M.
|
|
1997
|
27-28 |
5-7 |
p. 631-634
4 p.
|
artikel
|
| 89 |
Heteroepitaxial diamond growth on (100) silicon
|
Jiang, X.
|
|
1993
|
27-28 |
5-7 |
p. 1112-1113
2 p.
|
artikel
|
| 90 |
High quality homoepitaxial growth of diamond films
|
Vitton, Jean-Pierre
|
|
1993
|
27-28 |
5-7 |
p. 713-717
5 p.
|
artikel
|
| 91 |
HREM and EXELFS investigation of local structure in thin CVD diamond films
|
Dorignac, D.
|
|
1997
|
27-28 |
5-7 |
p. 758-762
5 p.
|
artikel
|
| 92 |
Improvement in IR properties of chemically vapour-deposited diamond films by smoothening with KrF excimer radiation
|
Boudina, A.
|
|
1993
|
27-28 |
5-7 |
p. 678-682
5 p.
|
artikel
|
| 93 |
Improvement of diamond nuclei orientation by double-step bias treatment in microwave plasma-assisted chemical vapor deposition using C2H4 and CH4 as carbon source
|
Saito, Takeyasu
|
|
1997
|
27-28 |
5-7 |
p. 668-672
5 p.
|
artikel
|
| 94 |
Improvement of mechanical properties of a-C:H by silicon addition
|
De Martino, C.
|
|
1997
|
27-28 |
5-7 |
p. 559-563
5 p.
|
artikel
|
| 95 |
Insight on the microscopical structure of a-C and a-C:H thin films through electron spin resonance analysis
|
Fanciulli, M.
|
|
1997
|
27-28 |
5-7 |
p. 725-729
5 p.
|
artikel
|
| 96 |
In-situ Fourier transform IR emission spectroscopy of diamond chemical vapor deposition
|
Spiberg, P.
|
|
1993
|
27-28 |
5-7 |
p. 708-712
5 p.
|
artikel
|
| 97 |
Interfacial analysis of CVD diamond on copper substrates
|
Jiang, N.
|
|
1997
|
27-28 |
5-7 |
p. 743-746
4 p.
|
artikel
|
| 98 |
Internal field emission at metal/diamond contact and performance of thin film field emitters: computer simulation
|
Hattori, Reiji
|
|
1997
|
27-28 |
5-7 |
p. 884-888
5 p.
|
artikel
|
| 99 |
Investigation of diamond-like carbon films for protection and stabilization of selenium-containing photoreceptors in electrophotography
|
Vasiljev, V.V.
|
|
1993
|
27-28 |
5-7 |
p. 667-669
3 p.
|
artikel
|
| 100 |
Investigation of surface preparation for diamond deposition on molybdenum substrates by secondary ion mass spectrometry
|
Steiner, R.
|
|
1993
|
27-28 |
5-7 |
p. 958-962
5 p.
|
artikel
|
| 101 |
Investigation of the boron incorporation in polycrystalline CVD diamond films by TEM, EELS and Raman spectroscopy
|
Wurzinger, P.
|
|
1997
|
27-28 |
5-7 |
p. 763-768
6 p.
|
artikel
|
| 102 |
Investigation of the nucleation layer in c-BN film growth
|
Freudenstein, R.
|
|
1997
|
27-28 |
5-7 |
p. 584-588
5 p.
|
artikel
|
| 103 |
Ion beam modification of diamond
|
Kalish, R.
|
|
1993
|
27-28 |
5-7 |
p. 621-633
13 p.
|
artikel
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| 104 |
Kinetics of the initial stages of CVD diamond growth on non-diamond substrates: surface catalytic effects and homoepitaxy
|
Chakk, Y.
|
|
1997
|
27-28 |
5-7 |
p. 681-686
6 p.
|
artikel
|
| 105 |
Large-area diamond deposition and brazing of the diamond films on steel substrates for tribological applications
|
Kohzaki, M.
|
|
1993
|
27-28 |
5-7 |
p. 612-616
5 p.
|
artikel
|
| 106 |
Lift-off technique of homoepitaxial CVD diamond films by deep implantation and selective etching
|
Locher, R.
|
|
1997
|
27-28 |
5-7 |
p. 654-657
4 p.
|
artikel
|
| 107 |
Liquid and solid erosion properties of diamond
|
Seward, C.R.
|
|
1993
|
27-28 |
5-7 |
p. 606-611
6 p.
|
artikel
|
| 108 |
Low amplitude oscillating sliding wear on chemically vapour deposited diamond coatings
|
Mohrbacher, H.
|
|
1993
|
27-28 |
5-7 |
p. 879-884
6 p.
|
artikel
|
| 109 |
Low-temperature formation of β-silicon carbide
|
Ulrich, S.
|
|
1997
|
27-28 |
5-7 |
p. 645-648
4 p.
|
artikel
|
| 110 |
Luminescent characterization of radiation damage and impurities in ion-implanted natural diamond
|
Gippius, A.A.
|
|
1993
|
27-28 |
5-7 |
p. 640-645
6 p.
|
artikel
|
| 111 |
Measurement and calculation of the thermal expansion coefficient of diamond
|
Moelle, C.
|
|
1997
|
27-28 |
5-7 |
p. 839-842
4 p.
|
artikel
|
| 112 |
Mechanical and thermophysical properties of diamond-like carbon (DLC) films with different sp 3 sp 2 ratios
|
Demichelis, F.
|
|
1993
|
27-28 |
5-7 |
p. 890-892
3 p.
|
artikel
|
| 113 |
Mechanism of surface smoothing of diamond by a hydrogen plasma
|
Rawles, R.E.
|
|
1997
|
27-28 |
5-7 |
p. 791-795
5 p.
|
artikel
|
| 114 |
Micromechanical properties of diamond films deposited by microwave-plasma-enhanced chemical vapour deposition
|
Garcia, A.
|
|
1993
|
27-28 |
5-7 |
p. 933-938
6 p.
|
artikel
|
| 115 |
Microstructure and growth of MWCVD diamond on Si1 − x C x buffer layers
|
Wittorf, D.
|
|
1997
|
27-28 |
5-7 |
p. 649-653
5 p.
|
artikel
|
| 116 |
Minimization of the defects concentration from boron incorporation in polycrystalline diamond films
|
Colineau, E.
|
|
1997
|
27-28 |
5-7 |
p. 778-782
5 p.
|
artikel
|
| 117 |
Modeling interface structures of cubic boron nitride films deposited heteroepitaxially and via a hexagonal boron nitride interlayer on silicon (001) surfaces
|
Zhang, R.Q.
|
|
1997
|
27-28 |
5-7 |
p. 589-593
5 p.
|
artikel
|
| 118 |
Molecular structure of E-BN
|
Olszyna, A.
|
|
1997
|
27-28 |
5-7 |
p. 617-620
4 p.
|
artikel
|
| 119 |
Nanoscale grinding of ceramics using diamond fibres
|
Partridge, P.G.
|
|
1997
|
27-28 |
5-7 |
p. 893-897
5 p.
|
artikel
|
| 120 |
Nitrogen and iodine doping in amorphous diamond-like carbon films
|
Allon-Alaluf, M.
|
|
1997
|
27-28 |
5-7 |
p. 555-558
4 p.
|
artikel
|
| 121 |
Non-CVD methods of diamond growth at low pressures
|
Prins, Johan F.
|
|
1993
|
27-28 |
5-7 |
p. 646-655
10 p.
|
artikel
|
| 122 |
Nucleation and initial growth of bias-assisted HFCVD diamond on boron nitride films
|
Polo, M.C.
|
|
1997
|
27-28 |
5-7 |
p. 579-583
5 p.
|
artikel
|
| 123 |
OBIC measurements on planar high voltage p+-n junctions with diamond-like carbon films as passivation layer
|
Frischholz, M.
|
|
1993
|
27-28 |
5-7 |
p. 778-781
4 p.
|
artikel
|
| 124 |
Optical and electrical investigation of boron-doped homoepitaxial diamond
|
Ogasawara, A.
|
|
1997
|
27-28 |
5-7 |
p. 835-838
4 p.
|
artikel
|
| 125 |
Optical and electronic properties of amorphous diamond
|
Veerasamy, V.S.
|
|
1993
|
27-28 |
5-7 |
p. 782-787
6 p.
|
artikel
|
| 126 |
Optical and photoemission studies of DLC films prepared with a systematic variation of the sp3:sp2 composition
|
Lifshitz, Y.
|
|
1997
|
27-28 |
5-7 |
p. 687-693
7 p.
|
artikel
|
| 127 |
Optimising control of microwave plasma bias enhanced nucleation for heteroepitaxial chemical vapour deposition diamond
|
Duncan Marshall, R.
|
|
1997
|
27-28 |
5-7 |
p. 676-680
5 p.
|
artikel
|
| 128 |
PACVD nano-crystalline BCN thin films obtained by use of an organoboron precursor
|
Loeffler, J.
|
|
1997
|
27-28 |
5-7 |
p. 608-611
4 p.
|
artikel
|
| 129 |
Paramagnetic centres in tetrahedral amorphous carbon
|
Fusco, G.
|
|
1997
|
27-28 |
5-7 |
p. 783-786
4 p.
|
artikel
|
| 130 |
Phase stability and stress relaxation effects of cubic boron nitride thin films under 350 keV ion irradiation
|
Widmayer, P.
|
|
1997
|
27-28 |
5-7 |
p. 621-625
5 p.
|
artikel
|
| 131 |
Photoluminescence in hydrogenated amorphous carbon
|
Rusli,
|
|
1997
|
27-28 |
5-7 |
p. 700-703
4 p.
|
artikel
|
| 132 |
Photoluminescence investigation of a-C: H thin films
|
Glesener, J.W.
|
|
1993
|
27-28 |
5-7 |
p. 670-672
3 p.
|
artikel
|
| 133 |
Piezoresistive effect of boron-doped diamond thin films
|
Dorsch, O.
|
|
1993
|
27-28 |
5-7 |
p. 1096-1099
4 p.
|
artikel
|
| 134 |
Possible technique for the characterization of diamond films using an ultrasonic resonance technique
|
Chandra, L.
|
|
1993
|
27-28 |
5-7 |
p. 977-983
7 p.
|
artikel
|
| 135 |
Post-depositional diamond etching
|
Bachmann, P.K.
|
|
1993
|
27-28 |
5-7 |
p. 683-693
11 p.
|
artikel
|
| 136 |
Preparation of CN x films by ion beam assisted filtered cathodic arc deposition
|
Spaeth, C.
|
|
1997
|
27-28 |
5-7 |
p. 626-630
5 p.
|
artikel
|
| 137 |
Preparation of crystalline carbon nitride films on silicon substrate by chemical vapor deposition
|
Woo, H.K.
|
|
1997
|
27-28 |
5-7 |
p. 635-639
5 p.
|
artikel
|
| 138 |
Production and characterisation of amorphic diamond films produced by pulsed laser ablation of graphite
|
Johnson, S.E.
|
|
1997
|
27-28 |
5-7 |
p. 569-573
5 p.
|
artikel
|
| 139 |
Properties and stability of diamond-like carbon films related to bonded and unbonded hydrogen
|
Martinu, L.
|
|
1993
|
27-28 |
5-7 |
p. 673-677
5 p.
|
artikel
|
| 140 |
Properties and texture of B-doped diamond films as thermal sensor
|
Ran, J.G.
|
|
1993
|
27-28 |
5-7 |
p. 793-796
4 p.
|
artikel
|
| 141 |
Quantitative study of Raman scattering and defect optical absorption in CVD diamond films
|
Vorlíček, V.
|
|
1997
|
27-28 |
5-7 |
p. 704-707
4 p.
|
artikel
|
| 142 |
Radiation damage and electrical properties of ion-implanted chemically vapour deposited diamond
|
Mori, Yusuke
|
|
1993
|
27-28 |
5-7 |
p. 634-639
6 p.
|
artikel
|
| 143 |
Raman diagnostics of amorphous diamond-like carbon films produced with a mass-separated ion beam
|
Khriachtchev, L.Yu.
|
|
1997
|
27-28 |
5-7 |
p. 694-699
6 p.
|
artikel
|
| 144 |
Raman signal vs. preparation conditions of C-implanted-and-excimer-laser-annealed Cu thin films
|
Fontaine, F.
|
|
1993
|
27-28 |
5-7 |
p. 746-752
7 p.
|
artikel
|
| 145 |
Raman spectroscopy investigation of cubic boron nitride single crystals and layers on Si(100)
|
Werninghaus, T.
|
|
1997
|
27-28 |
5-7 |
p. 612-616
5 p.
|
artikel
|
| 146 |
Recovery process of photochromism of H2 and H3 centres in diamond
|
Mita, Y.
|
|
1993
|
27-28 |
5-7 |
p. 768-772
5 p.
|
artikel
|
| 147 |
Rectifying diodes with a metal/intrinsic semiconductor/semiconductor structure using polycrystalline diamond films
|
Miyata, K.
|
|
1993
|
27-28 |
5-7 |
p. 1107-1111
5 p.
|
artikel
|
| 148 |
Residual stress in polycrystalline diamond/Ti6Al4V systems
|
Scardi, Paolo
|
|
1997
|
27-28 |
5-7 |
p. 807-811
5 p.
|
artikel
|
| 149 |
Shock-wave-induced phase transition in C:N films
|
Guseva, M.B.
|
|
1997
|
27-28 |
5-7 |
p. 640-644
5 p.
|
artikel
|
| 150 |
Single source deposition of Me-C:H films using metal-organic precursors
|
Luithardt, W.
|
|
1997
|
27-28 |
5-7 |
p. 533-536
4 p.
|
artikel
|
| 151 |
Space-charge-limited current flow and trap density in undoped diamond films
|
Werner, M.
|
|
1993
|
27-28 |
5-7 |
p. 825-828
4 p.
|
artikel
|
| 152 |
Spectroscopic ellipsometry measurements of the diamond-crystalline Si interface in chemically vapour-deposited polycrystalline diamond films
|
Cifre, J.
|
|
1993
|
27-28 |
5-7 |
p. 728-731
4 p.
|
artikel
|
| 153 |
Structural, optical and electronic properties of wide band gap amorphous carbon-silicon alloys
|
De Cesare, G.
|
|
1993
|
27-28 |
5-7 |
p. 773-777
5 p.
|
artikel
|
| 154 |
Structure and properties of a-C:H films deposited onto polymeric substrates
|
Vasquez, S.
|
|
1997
|
27-28 |
5-7 |
p. 551-554
4 p.
|
artikel
|
| 155 |
Studies of nanoscale structure and its transformation in pulsed-laser deposited dense diamond-like carbon films
|
Apakina, V.N.
|
|
1997
|
27-28 |
5-7 |
p. 564-568
5 p.
|
artikel
|
| 156 |
Subject index
|
|
|
1993
|
27-28 |
5-7 |
p. 1117-1124
8 p.
|
artikel
|
| 157 |
Subject index
|
|
|
1997
|
27-28 |
5-7 |
p. 919-925
7 p.
|
artikel
|
| 158 |
Superpolishing of diamond
|
Gaissmaier, K.
|
|
1993
|
27-28 |
5-7 |
p. 943-948
6 p.
|
artikel
|
| 159 |
Synthesis of diamond using iron catalyst by r.f. plasma chemical vapor deposition
|
Shimada, Yoshihito
|
|
1993
|
27-28 |
5-7 |
p. 656-660
5 p.
|
artikel
|
| 160 |
TEM investigations on the heteroepitaxial nucleation of CVD diamond on (001) silicon substrates
|
Wurzinger, P.
|
|
1997
|
27-28 |
5-7 |
p. 752-757
6 p.
|
artikel
|
| 161 |
Temporally resolved response of a natural type IIA diamond detector to single-particle excitation
|
Han, S.
|
|
1993
|
27-28 |
5-7 |
p. 835-840
6 p.
|
artikel
|
| 162 |
The effective free path length of phonons in diamond
|
Nepsha, V.I.
|
|
1993
|
27-28 |
5-7 |
p. 862-865
4 p.
|
artikel
|
| 163 |
The effect of deposition parameters on the compressive stress in a-C: H thin films
|
Crouse, P.L.
|
|
1993
|
27-28 |
5-7 |
p. 885-889
5 p.
|
artikel
|
| 164 |
The effect of varying deposition conditions on the Young's modulus of diamond coated wires
|
Nicholson, E.D.
|
|
1997
|
27-28 |
5-7 |
p. 817-821
5 p.
|
artikel
|
| 165 |
The influence of oxygen, in gas mixtures and various substrate positions, on the broad cathodoluminescence bands of MPCVD diamond films
|
Deneuville, A.
|
|
1993
|
27-28 |
5-7 |
p. 737-741
5 p.
|
artikel
|
| 166 |
Thermal conductivity and the microstructure of state-of-the-art chemical-vapor-deposited (CVD) diamond
|
Graebner, J.E.
|
|
1993
|
27-28 |
5-7 |
p. 1059-1063
5 p.
|
artikel
|
| 167 |
Thermal diffusivity of diamond films synthesized from methane by arc discharge plasma jet CVD
|
Boudina, A.
|
|
1993
|
27-28 |
5-7 |
p. 852-858
7 p.
|
artikel
|
| 168 |
Thermal expansion of synthetic diamond single crystals at low temperatures
|
Haruna, K.
|
|
1993
|
27-28 |
5-7 |
p. 859-861
3 p.
|
artikel
|
| 169 |
Thermal-programmed desorption (TPD) of deuterium from Di(111) surface: presence of two adsorption states
|
Bobrov, K.
|
|
1997
|
27-28 |
5-7 |
p. 736-742
7 p.
|
artikel
|
| 170 |
Thinning and patterning of CVD diamond films by diffusional reaction
|
Jin, S.
|
|
1993
|
27-28 |
5-7 |
p. 1038-1042
5 p.
|
artikel
|
| 171 |
Total-dose hardness integrated circuit fabricated with silicon-on-diamond structured wafer
|
Gu, Changzhi
|
|
1997
|
27-28 |
5-7 |
p. 673-675
3 p.
|
artikel
|
| 172 |
Transition from polymer-like to diamond-like a-C:H films structure and mechanical properties
|
Novikov, N.V.
|
|
1997
|
27-28 |
5-7 |
p. 574-578
5 p.
|
artikel
|
| 173 |
Trap states elucidated by a.c. conductance measurement in polycrystalline chemically vapour-deposited diamond films
|
Sugino, Takashi
|
|
1993
|
27-28 |
5-7 |
p. 803-807
5 p.
|
artikel
|
| 174 |
Tribological behaviour of diamond-like carbon coatings at high rates of sliding
|
Aksenov, I.I.
|
|
1993
|
27-28 |
5-7 |
p. 866-868
3 p.
|
artikel
|
| 175 |
Tribological properties of diamond-like carbon and related materials
|
Grill, A.
|
|
1993
|
27-28 |
5-7 |
p. 597-605
9 p.
|
artikel
|
| 176 |
Tuning the electron affinity of CVD diamond with adsorbed caesium and oxygen layers
|
Loh, K.P.
|
|
1997
|
27-28 |
5-7 |
p. 874-878
5 p.
|
artikel
|
| 177 |
Use of diamond-like carbon films in X-ray optics
|
Kondrashov, P.E.
|
|
1997
|
27-28 |
5-7 |
p. 902-905
4 p.
|
artikel
|
| 178 |
Variation of the raman diamond line shape with crystallographic orientation of isolated chemical-vapour-deposited diamond crystals
|
Stuart, S.-A.
|
|
1993
|
27-28 |
5-7 |
p. 753-757
5 p.
|
artikel
|
| 179 |
Wear behaviour of various diamond-coated cutting tools under different deposition conditions
|
Huang, T.H.
|
|
1993
|
27-28 |
5-7 |
p. 928-932
5 p.
|
artikel
|
| 180 |
Wide frequency dielectric properties of CVD diamond
|
Ibarra, A.
|
|
1997
|
27-28 |
5-7 |
p. 856-859
4 p.
|
artikel
|
| 181 |
Young's modulus and Poisson's ratio of CVD diamond
|
Klein, Claude A.
|
|
1993
|
27-28 |
5-7 |
p. 918-923
6 p.
|
artikel
|
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