| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acknowledgment
|
|
|
1992
|
27-28 |
2-4 |
p. xvii-
1 p.
|
artikel
|
| 2 |
A comparative study of laminar and turbulent oxygen-acetylene flames for diamond deposition
|
Alers, P.
|
|
1993
|
27-28 |
2-4 |
p. 393-396
4 p.
|
artikel
|
| 3 |
A micro-IBIC comparison between natural and CVD diamond
|
Manfredotti, C.
|
|
1997
|
27-28 |
2-4 |
p. 320-324
5 p.
|
artikel
|
| 4 |
Amorphous SiC PVD coatings
|
Knotek, O.
|
|
1993
|
27-28 |
2-4 |
p. 528-530
3 p.
|
artikel
|
| 5 |
A new method for the generation of diamond nuclei by plasma CVD
|
Yugo, S.
|
|
1992
|
27-28 |
2-4 |
p. 388-391
4 p.
|
artikel
|
| 6 |
Annihilation of nucleation sites during diamond CVD
|
Jeoung Woo Kim,
|
|
1992
|
27-28 |
2-4 |
p. 200-204
5 p.
|
artikel
|
| 7 |
An r.f. plasma jet applied to diamond, glassy carbon and silicon carbide film synthesis
|
Bárdoš, L.
|
|
1993
|
27-28 |
2-4 |
p. 517-522
6 p.
|
artikel
|
| 8 |
An X-ray photoelectron spectroscopy study of the surface layers between diamond crystallites and silicon substrate deposited by microwave-plasma-assisted chemical vapour deposition
|
Haq, S.
|
|
1993
|
27-28 |
2-4 |
p. 558-561
4 p.
|
artikel
|
| 9 |
A study on synthesis of diamond by capacitively coupled RF plasma-assisted chemical vapor deposition
|
Lee, S.R.
|
|
1992
|
27-28 |
2-4 |
p. 235-238
4 p.
|
artikel
|
| 10 |
Atomic configuration at the β-SiCc(2 × 2) reconstructed surface
|
Badziag, P.
|
|
1992
|
27-28 |
2-4 |
p. 285-289
5 p.
|
artikel
|
| 11 |
Author index
|
|
|
1992
|
27-28 |
2-4 |
p. xix-xxx
nvt p.
|
artikel
|
| 12 |
Author index
|
|
|
1993
|
27-28 |
2-4 |
p. xvii-xviii
nvt p.
|
artikel
|
| 13 |
Author index
|
|
|
1997
|
27-28 |
2-4 |
p. xvii-xix
nvt p.
|
artikel
|
| 14 |
Boronated tetrahedral amorphous carbon (ta-C:B)
|
Chhowalla, M.
|
|
1997
|
27-28 |
2-4 |
p. 207-211
5 p.
|
artikel
|
| 15 |
Characterisation of the AgC:H deposition process
|
Harnack, J.T.
|
|
1992
|
27-28 |
2-4 |
p. 301-306
6 p.
|
artikel
|
| 16 |
Characterization and growth of carbon phases synthesized by high temperature carbon ion implantation into copper
|
Cabioc'h, T.
|
|
1997
|
27-28 |
2-4 |
p. 261-265
5 p.
|
artikel
|
| 17 |
Characterization of a CH4-RF-plasma by ion flux, Langmuir probe, and optical emission spectroscopy measurements
|
Weiler, M.
|
|
1992
|
27-28 |
2-4 |
p. 121-126
6 p.
|
artikel
|
| 18 |
Characterization of catalytically synthesized turbostratic carbon films used for improved rates of diamond nucleation
|
Oral, Baybars
|
|
1993
|
27-28 |
2-4 |
p. 225-228
4 p.
|
artikel
|
| 19 |
Characterization of diamond-like carbon films by fine scale indentation measurements
|
Smith, J.
|
|
1992
|
27-28 |
2-4 |
p. 355-359
5 p.
|
artikel
|
| 20 |
Characterization of interfaces between hydrogenated amorphous carbon films and steel substrates using high resolution cross-sectional transmission electron microscopy
|
Sjöström, H.
|
|
1993
|
27-28 |
2-4 |
p. 562-566
5 p.
|
artikel
|
| 21 |
Characterization of ion-beam-deposited diamond-like carbon films
|
Liebler, V.
|
|
1993
|
27-28 |
2-4 |
p. 584-589
6 p.
|
artikel
|
| 22 |
Characterization of metal-diamond interfaces: Electron affinity and Schottky barrier height
|
Baumann, P.K.
|
|
1997
|
27-28 |
2-4 |
p. 398-402
5 p.
|
artikel
|
| 23 |
Characterization of the microstructure of diamond pyramidal microtip emitters
|
Kang, W.P.
|
|
1997
|
27-28 |
2-4 |
p. 403-405
3 p.
|
artikel
|
| 24 |
Chemical vapour deposition and characterization of smooth {100}-faceted diamond films
|
Wild, C.
|
|
1993
|
27-28 |
2-4 |
p. 158-168
11 p.
|
artikel
|
| 25 |
CO2-laser-induced gas-phase synthesis of micron-sized diamond powders: recent results and future developments
|
Buerki, P.R.
|
|
1993
|
27-28 |
2-4 |
p. 174-182
9 p.
|
artikel
|
| 26 |
Combined effect of nitrogen and pulsed microwave plasma on diamond growth
|
Chatei, Hassan
|
|
1997
|
27-28 |
2-4 |
p. 505-510
6 p.
|
artikel
|
| 27 |
Combustion flame grown diamond films
|
Golozar, M.A.
|
|
1992
|
27-28 |
2-4 |
p. 262-266
5 p.
|
artikel
|
| 28 |
Committees
|
|
|
1993
|
27-28 |
2-4 |
p. xv-xvi
nvt p.
|
artikel
|
| 29 |
Comparison of laser and O2 plasma etching of diamond-like carbon films
|
Ralchenko, V.G.
|
|
1993
|
27-28 |
2-4 |
p. 211-217
7 p.
|
artikel
|
| 30 |
Complications of halogen-assisted chemical vapor deposition of diamond
|
Wong, M.S.
|
|
1992
|
27-28 |
2-4 |
p. 369-372
4 p.
|
artikel
|
| 31 |
Conference calendar
|
|
|
1993
|
27-28 |
2-4 |
p. xxvii-xxix
nvt p.
|
artikel
|
| 32 |
Conference calendar
|
|
|
1997
|
27-28 |
2-4 |
p. xv-xvi
nvt p.
|
artikel
|
| 33 |
Conference calendar
|
|
|
1992
|
27-28 |
2-4 |
p. xxvii-
1 p.
|
artikel
|
| 34 |
Correlation between ion-flux and microstructure of a-C:H films
|
Ehrhardt, H.
|
|
1992
|
27-28 |
2-4 |
p. 316-320
5 p.
|
artikel
|
| 35 |
Crystal growth and gas ratio effect of diamond films synthesized by oxyacetylene flames
|
Zhu, W.
|
|
1993
|
27-28 |
2-4 |
p. 491-495
5 p.
|
artikel
|
| 36 |
Cumulative author index
|
|
|
1992
|
27-28 |
2-4 |
p. xxix-xxxx
nvt p.
|
artikel
|
| 37 |
Cumulative author index
|
|
|
1993
|
27-28 |
2-4 |
p. xxxi-xxxii
nvt p.
|
artikel
|
| 38 |
Cumulative subject index
|
|
|
1992
|
27-28 |
2-4 |
p. xxx-
1 p.
|
artikel
|
| 39 |
Cumulative subject index
|
|
|
1993
|
27-28 |
2-4 |
p. xxxiii-xli
nvt p.
|
artikel
|
| 40 |
Defined etching of carbon-diamond films on silicon using an oxygen plasma with titanium masking
|
Chan, K.K.
|
|
1992
|
27-28 |
2-4 |
p. 281-284
4 p.
|
artikel
|
| 41 |
Deposition of CVD diamond onto boron carbide substrates
|
May, P.W.
|
|
1997
|
27-28 |
2-4 |
p. 450-455
6 p.
|
artikel
|
| 42 |
Deposition of dense C:H films at elevated substrate temperature
|
von Keudell, A.
|
|
1993
|
27-28 |
2-4 |
p. 251-254
4 p.
|
artikel
|
| 43 |
Deposition of diamond-like carbon films by photon-enhanced chemical vapour deposition of methane using a windowless hydrogen lamp
|
White, A.J.
|
|
1993
|
27-28 |
2-4 |
p. 255-258
4 p.
|
artikel
|
| 44 |
Deposition of non-graphitic carbon films by low carbon particle energies
|
Ullmann, J.
|
|
1992
|
27-28 |
2-4 |
p. 321-327
7 p.
|
artikel
|
| 45 |
Design-to-implementation case studies of CVD diamond in r.f./microwave package and detector applications
|
Gray, K.J.
|
|
1997
|
27-28 |
2-4 |
p. 191-195
5 p.
|
artikel
|
| 46 |
Determination ofsp3/sp2 ratio in diamond-like films of a-C:H
|
Demichelis, F.
|
|
1992
|
27-28 |
2-4 |
p. 298-300
3 p.
|
artikel
|
| 47 |
Diamond chemical vapour deposition using tantalum filaments in H2CH4O2 gas mixtures
|
Brückner, J.
|
|
1993
|
27-28 |
2-4 |
p. 373-377
5 p.
|
artikel
|
| 48 |
Diamond coatings for IR window applications
|
Miller, A.J.
|
|
1997
|
27-28 |
2-4 |
p. 386-389
4 p.
|
artikel
|
| 49 |
Diamond crystallites nucleation on sintered tungsten: temperature and thermal treatment effects
|
Polini, R.
|
|
1992
|
27-28 |
2-4 |
p. 205-210
6 p.
|
artikel
|
| 50 |
Diamond deposition from an ArCCl4H2 plasma jet at 13.3 kPa
|
Kotaki, T.
|
|
1993
|
27-28 |
2-4 |
p. 342-346
5 p.
|
artikel
|
| 51 |
Diamond deposition in a bell-jar reactor: influence of the plasma and substrate parameters on the microstructure and growth rate
|
Gicquel, A.
|
|
1993
|
27-28 |
2-4 |
p. 417-424
8 p.
|
artikel
|
| 52 |
Diamond deposition in a microwave electrode discharge at reduced pressures
|
Bárdoš, L.
|
|
1997
|
27-28 |
2-4 |
p. 224-229
6 p.
|
artikel
|
| 53 |
Diamond deposition on noble metals
|
Kalss, W.
|
|
1997
|
27-28 |
2-4 |
p. 240-246
7 p.
|
artikel
|
| 54 |
Diamond deposition with ArCO2CH4H2 plasma jets
|
Aoyama, K.
|
|
1993
|
27-28 |
2-4 |
p. 337-341
5 p.
|
artikel
|
| 55 |
Diamond film preparation by arc-discharge plasma-jet-CVD and thermodynamic calculation of the equilibrium gas composition
|
Boudina, A.
|
|
1992
|
27-28 |
2-4 |
p. 380-387
8 p.
|
artikel
|
| 56 |
Diamond film synthesis on Mo in thermal RF plasma
|
Hernberg, R.
|
|
1992
|
27-28 |
2-4 |
p. 255-261
7 p.
|
artikel
|
| 57 |
Diamond formation from a system of SiC and a metal
|
Hong, Shi Ming
|
|
1993
|
27-28 |
2-4 |
p. 508-511
4 p.
|
artikel
|
| 58 |
Diamond growth by methane injection into hydrogen-oxygen flames
|
Glumac, N.G.
|
|
1993
|
27-28 |
2-4 |
p. 169-173
5 p.
|
artikel
|
| 59 |
Diamond growth chemistry: Its observation using real time in situ molecular beam scattering techniques
|
Loh, K.P.
|
|
1997
|
27-28 |
2-4 |
p. 219-223
5 p.
|
artikel
|
| 60 |
Diamond growth in a direct-current low-pressure supersonic plasmajet
|
Laimer, J.
|
|
1997
|
27-28 |
2-4 |
p. 406-410
5 p.
|
artikel
|
| 61 |
Diamond growth on a large area and some aspects of diamond nucleation
|
Samokhvalov, N.V.
|
|
1997
|
27-28 |
2-4 |
p. 426-429
4 p.
|
artikel
|
| 62 |
Diamond homoepitaxy by chemical vapor deposition
|
Badzian, Andrzej
|
|
1993
|
27-28 |
2-4 |
p. 147-157
11 p.
|
artikel
|
| 63 |
Diamond homoepitaxy by hot-filament chemical vapor deposition
|
Avigal, Y.
|
|
1993
|
27-28 |
2-4 |
p. 462-467
6 p.
|
artikel
|
| 64 |
Diamond in the USA
|
Yoder, Max N.
|
|
1993
|
27-28 |
2-4 |
p. 59-64
6 p.
|
artikel
|
| 65 |
Diamond-like films deposition by magnetron sputtering with additional ionization
|
Chuzhko, R.K.
|
|
1992
|
27-28 |
2-4 |
p. 332-333
2 p.
|
artikel
|
| 66 |
Diamond nucleation enhancement by hydrofluoric acid etching of silicon substrate
|
Schelz, S.
|
|
1997
|
27-28 |
2-4 |
p. 440-443
4 p.
|
artikel
|
| 67 |
Diamond nucleation on pretreated substrates
|
Kobayashi, Kenji
|
|
1993
|
27-28 |
2-4 |
p. 278-284
7 p.
|
artikel
|
| 68 |
Diamond nucleation on steel substrates
|
Spinnewyn, J.
|
|
1993
|
27-28 |
2-4 |
p. 361-364
4 p.
|
artikel
|
| 69 |
Diamond synthesis by CO2 laser irradiation
|
Kikuchi, Noribumi
|
|
1993
|
27-28 |
2-4 |
p. 190-196
7 p.
|
artikel
|
| 70 |
Diamond synthesis on substrates treated by collision with particles
|
Takarada, T.
|
|
1993
|
27-28 |
2-4 |
p. 323-327
5 p.
|
artikel
|
| 71 |
Diffusion of implanted nickel in diamond
|
Filipp, A.R.
|
|
1992
|
27-28 |
2-4 |
p. 271-276
6 p.
|
artikel
|
| 72 |
DLC film preparation by LASER-ARC and properties study
|
Scheibe, H.-J.
|
|
1992
|
27-28 |
2-4 |
p. 98-103
6 p.
|
artikel
|
| 73 |
Doping of amorphous-hydrogenated carbon films by ion implantation
|
Amir, O.
|
|
1992
|
27-28 |
2-4 |
p. 364-368
5 p.
|
artikel
|
| 74 |
E-BN crystallization under thermodynamic instability (p,T) conditions
|
Sokołowska, A.
|
|
1992
|
27-28 |
2-4 |
p. 334-336
3 p.
|
artikel
|
| 75 |
Effect of high supersaturation at the initial stage on diamond nucleation phenomena
|
Mitsuda, Yoshitaka
|
|
1993
|
27-28 |
2-4 |
p. 333-336
4 p.
|
artikel
|
| 76 |
Effect of surface species concentrations and temperature on diamond film morphology in inductively coupled r.f. plasma CVD
|
Lindsay, J.W.
|
|
1997
|
27-28 |
2-4 |
p. 481-485
5 p.
|
artikel
|
| 77 |
Effect of the buoyancy force on diamond formation during synthesis under a high pressure
|
Lee, Jae-Kap
|
|
1993
|
27-28 |
2-4 |
p. 496-499
4 p.
|
artikel
|
| 78 |
Effects of electron and atomic hydrogen irradiation on gas-source molecular beam epitaxy of diamond with pure methane
|
Nishimori, Toshihiko
|
|
1997
|
27-28 |
2-4 |
p. 463-467
5 p.
|
artikel
|
| 79 |
Effects of fluorine implantation into a-C:H thin films
|
Wong, S.P.
|
|
1993
|
27-28 |
2-4 |
p. 580-583
4 p.
|
artikel
|
| 80 |
Effects of Mo(CO)6 and W(CO)6 introduced to plasma on diamond synthesis by microwave plasma CVD
|
Nagano, Masamitsu
|
|
1997
|
27-28 |
2-4 |
p. 501-504
4 p.
|
artikel
|
| 81 |
Effects of simultaneous boron and nitrogen addition on hot-filament CVD diamond growth
|
Hartmann, P.
|
|
1997
|
27-28 |
2-4 |
p. 456-462
7 p.
|
artikel
|
| 82 |
Effects of UV irradiation on the growth of diamond at lower temperatures
|
Kamo, M.
|
|
1992
|
27-28 |
2-4 |
p. 104-108
5 p.
|
artikel
|
| 83 |
Electron beam assisted deposition of sharp needles from a decomposed gas mixture of methane and hydrogen
|
Abe, Atsuyoshi
|
|
1992
|
27-28 |
2-4 |
p. 267-270
4 p.
|
artikel
|
| 84 |
Electronic structure of diamond-like carbon
|
Robertson, J.
|
|
1997
|
27-28 |
2-4 |
p. 212-218
7 p.
|
artikel
|
| 85 |
Energy distribution of H atom and C2 radical during diamond growth in H2/ArCH4O2 plasma
|
Mitsuda, Yoshitaka
|
|
1997
|
27-28 |
2-4 |
p. 468-471
4 p.
|
artikel
|
| 86 |
Enhanced deposition rate of diamond in atmospheric pressure plasma CVD: Effects of a secondary discharge
|
Baldwin Jr., Scott K.
|
|
1997
|
27-28 |
2-4 |
p. 202-206
5 p.
|
artikel
|
| 87 |
Enhancement/depletion MESFETs of diamond and their logic circuits
|
Hokazono, A.
|
|
1997
|
27-28 |
2-4 |
p. 339-343
5 p.
|
artikel
|
| 88 |
Epitaxial growth of diamond thin films on foreign substrates
|
Inuzuka, Tadao
|
|
1992
|
27-28 |
2-4 |
p. 175-179
5 p.
|
artikel
|
| 89 |
Epitaxial growth of unintentionally p-type doped β-SiC single crystal layers
|
Weber, Thomas
|
|
1992
|
27-28 |
2-4 |
p. 147-150
4 p.
|
artikel
|
| 90 |
Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition
|
Stoner, B.R.
|
|
1993
|
27-28 |
2-4 |
p. 142-146
5 p.
|
artikel
|
| 91 |
Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide
|
Davis, Robert F.
|
|
1992
|
27-28 |
2-4 |
p. 109-120
12 p.
|
artikel
|
| 92 |
ESR studies of incorporation of phosphorus into high-pressure synthetic diamond
|
Isoya, J.
|
|
1997
|
27-28 |
2-4 |
p. 356-360
5 p.
|
artikel
|
| 93 |
Etching of polycrystalline diamond and amorphous carbon films by RIE
|
Dorsch, O.
|
|
1992
|
27-28 |
2-4 |
p. 277-280
4 p.
|
artikel
|
| 94 |
Evaluation of diamond-like carbon-coated orthopaedic implants
|
Dowling, D.P.
|
|
1997
|
27-28 |
2-4 |
p. 390-393
4 p.
|
artikel
|
| 95 |
Evolution of the structure of ultrafine SiC-laser-formed powders with synthesis conditions
|
Tougne, P.
|
|
1993
|
27-28 |
2-4 |
p. 486-490
5 p.
|
artikel
|
| 96 |
Examination of the effects of nitrogen on the CVD diamond growth mechanism using in situ molecular beam mass spectrometry
|
Tsang, R.S.
|
|
1997
|
27-28 |
2-4 |
p. 247-254
8 p.
|
artikel
|
| 97 |
Excitonic recombination radiation as characterization of diamonds using cathodoluminescence
|
Kawarada, H.
|
|
1993
|
27-28 |
2-4 |
p. 100-105
6 p.
|
artikel
|
| 98 |
Features of diamond deposition on modified silica glass substrates
|
Terranova, M.L.
|
|
1997
|
27-28 |
2-4 |
p. 444-449
6 p.
|
artikel
|
| 99 |
Formation of an oriented β-SiC layer during the initial growth phase of diamond on silicon (100)
|
Maillard-Schaller, E.
|
|
1997
|
27-28 |
2-4 |
p. 282-285
4 p.
|
artikel
|
| 100 |
Formation of nanocrystalline diamond by hydrocarbon plasma beam deposition
|
Sattel, S.
|
|
1997
|
27-28 |
2-4 |
p. 255-260
6 p.
|
artikel
|
| 101 |
Free-standing diamond film preparation using copper substrate
|
Fan, Qi Hua
|
|
1997
|
27-28 |
2-4 |
p. 422-425
4 p.
|
artikel
|
| 102 |
Geometric modeling of the diamond-β-SiC heteroepitaxial interface
|
Zhu, W.
|
|
1993
|
27-28 |
2-4 |
p. 590-596
7 p.
|
artikel
|
| 103 |
Growth, doping and characterization of Al x Ga1 − x N thin film alloys on 6H-SiC(0001) substrates
|
Bremser, M.D.
|
|
1997
|
27-28 |
2-4 |
p. 196-201
6 p.
|
artikel
|
| 104 |
Growth mechanisms of diamond crystals and films prepared by chemical vapor deposition
|
Bonnot, A.M.
|
|
1992
|
27-28 |
2-4 |
p. 230-234
5 p.
|
artikel
|
| 105 |
Growth of cubic boron nitride and boron-carbon-nitrogen coatings using N-trimethylborazine in an electron cyclotron resonance plasma process
|
Weber, A.
|
|
1993
|
27-28 |
2-4 |
p. 201-206
6 p.
|
artikel
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| 106 |
Growth of cubic boron nitride by chemical vapor deposition and high-pressure high-temperature synthesis
|
Demazeau, Gérard
|
|
1993
|
27-28 |
2-4 |
p. 197-200
4 p.
|
artikel
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| 107 |
Growth of cubic boron nitride from vapor phase
|
Saitoh, Hidetoshi
|
|
1992
|
27-28 |
2-4 |
p. 137-146
10 p.
|
artikel
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| 108 |
Growth of diamond films from a continuous or interrupted CF4 supply
|
Lee, J.-J.
|
|
1997
|
27-28 |
2-4 |
p. 511-515
5 p.
|
artikel
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| 109 |
H actinometry with CF4 addition in microwave plasma-assisted chemical vapor deposition of diamond
|
Ferreira, N.G.
|
|
1997
|
27-28 |
2-4 |
p. 472-475
4 p.
|
artikel
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| 110 |
Heteroepitaxial diamond growth process on platinum (111)
|
Tachibana, Takeshi
|
|
1997
|
27-28 |
2-4 |
p. 266-271
6 p.
|
artikel
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| 111 |
High-temperature epitaxy of diamond in a turbulent flame
|
Snail, K.A.
|
|
1992
|
27-28 |
2-4 |
p. 180-186
7 p.
|
artikel
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| 112 |
High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor
|
Pang, Lisa Y.S.
|
|
1997
|
27-28 |
2-4 |
p. 333-338
6 p.
|
artikel
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| 113 |
High temperature Young's modulus of polycrystalline diamond
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Werner, M.
|
|
1997
|
27-28 |
2-4 |
p. 344-347
4 p.
|
artikel
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| 114 |
High-voltage Schottky diode on epitaxial diamond layer
|
Ebert, W.
|
|
1997
|
27-28 |
2-4 |
p. 329-332
4 p.
|
artikel
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| 115 |
1H NMR studies on the effects of annealing on chemical-vapor-deposited (CVD) diamond
|
Mitra, S.
|
|
1993
|
27-28 |
2-4 |
p. 126-129
4 p.
|
artikel
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| 116 |
Hydrogen distribution and heterogeneity of chemical bonds in surface and internal layers of a-C:H films
|
Ralchenko, V.G.
|
|
1992
|
27-28 |
2-4 |
p. 345-349
5 p.
|
artikel
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| 117 |
Hydrogen-free amorphous carbon coatings deposited by the arc ion-plating process
|
Knotek, O.
|
|
1993
|
27-28 |
2-4 |
p. 243-245
3 p.
|
artikel
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| 118 |
Hydrogen-related gap states in the near surface of chemical vapor deposited homoepitaxial diamond films
|
Hayashi, Kazushi
|
|
1997
|
27-28 |
2-4 |
p. 303-307
5 p.
|
artikel
|
| 119 |
Identification of structural defects in diamond-like films based on the comparison of X-rayCK α emission spectra with simple band structure calculations
|
Kurmaev, E.Z.
|
|
1992
|
27-28 |
2-4 |
p. 337-340
4 p.
|
artikel
|
| 120 |
Implementation of large-scale deposition of diamond films by combustion synthesis
|
Wang, D.Y.
|
|
1993
|
27-28 |
2-4 |
p. 304-310
7 p.
|
artikel
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| 121 |
Inelastic neutron scattering of amorphous hydrogenated carbon
|
Honeybone, P.J.R.
|
|
1992
|
27-28 |
2-4 |
p. 293-297
5 p.
|
artikel
|
| 122 |
Influence of atomic hydrogen gradients on the growth rate and nucleation of diamond produced by microwave plasma assisted deposition
|
Ohl, A.
|
|
1993
|
27-28 |
2-4 |
p. 298-303
6 p.
|
artikel
|
| 123 |
Influence of π-bonded clusters on the electronic properties of diamond-like carbon films
|
Bounouh, Y.
|
|
1993
|
27-28 |
2-4 |
p. 259-265
7 p.
|
artikel
|
| 124 |
Influence of gas phase parameters on the deposition kinetics and morphology of thin diamond films deposited by HFCVD and MWCVD technique
|
Beckmann, R.
|
|
1992
|
27-28 |
2-4 |
p. 164-167
4 p.
|
artikel
|
| 125 |
Influence of ion energy and flux composition on the properties of plasma-deposited amorphous carbon and amorphous hydrogenated carbon films
|
Kleber, R.
|
|
1993
|
27-28 |
2-4 |
p. 246-250
5 p.
|
artikel
|
| 126 |
Influence of sputtering target material on the formation of cubic BN thin films by ion beam enhanced deposition
|
Tanabe, N.
|
|
1993
|
27-28 |
2-4 |
p. 512-516
5 p.
|
artikel
|
| 127 |
Influence of the electron cyclotron resonance microwave plasma on growth and properties of diamond-like carbon films deposited onto r.f. biased substrates
|
Dušek, V.
|
|
1993
|
27-28 |
2-4 |
p. 397-401
5 p.
|
artikel
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| 128 |
Initial results of a novel pre-deposition seeding technique for achieving an ultra-high nucleation density for CVD diamond growth
|
Malshe, A.P.
|
|
1997
|
27-28 |
2-4 |
p. 430-434
5 p.
|
artikel
|
| 129 |
In-situ investigation of low-pressure diamond growth by elastic scattering of light and reflectance spectroscopy
|
Bonnot, A.M.
|
|
1992
|
27-28 |
2-4 |
p. 161-163
3 p.
|
artikel
|
| 130 |
Insulating diamond coatings on tungsten electrodes
|
Matthée, Th.
|
|
1997
|
27-28 |
2-4 |
p. 293-297
5 p.
|
artikel
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| 131 |
Interface structures for epitaxy of diamond on Si(100)
|
Verwoerd, W.S.
|
|
1992
|
27-28 |
2-4 |
p. 195-199
5 p.
|
artikel
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| 132 |
Investigation of diamond C(111) (2 × 1) surface exposed to hydrogen and hydrocarbon species using second-harmonic generation and sum frequency generation
|
Seki, H.
|
|
1993
|
27-28 |
2-4 |
p. 567-572
6 p.
|
artikel
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| 133 |
Investigation of diamond thin film growth on ferrous surfaces
|
Ahn, J.
|
|
1993
|
27-28 |
2-4 |
p. 353-356
4 p.
|
artikel
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| 134 |
Investigation of rotating d.c. discharge for diamond deposition
|
Nesládek, M.
|
|
1993
|
27-28 |
2-4 |
p. 357-360
4 p.
|
artikel
|
| 135 |
Investigation of the c-BN/h-BN phase transformation at normal pressure
|
Sachdev, H.
|
|
1997
|
27-28 |
2-4 |
p. 286-292
7 p.
|
artikel
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| 136 |
Ion beam assisted growth of dense diamond-like carbon
|
Andre´, B.
|
|
1992
|
27-28 |
2-4 |
p. 307-311
5 p.
|
artikel
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| 137 |
Ion energy distributions from electron cyclotron resonance methane plasmas
|
Jacob, W.
|
|
1993
|
27-28 |
2-4 |
p. 378-382
5 p.
|
artikel
|
| 138 |
Ion etching behaviour and surface binding energies of hard diamond-like carbon and microwave chemical vapour deposition diamond films
|
Ullmann, J.
|
|
1993
|
27-28 |
2-4 |
p. 266-271
6 p.
|
artikel
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| 139 |
Kinetics of diamond growth on Si(100) substrate monitored by electron spectroscopy
|
Le Normand, F.
|
|
1993
|
27-28 |
2-4 |
p. 552-557
6 p.
|
artikel
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| 140 |
Large-area diamond deposition by microwave plasma
|
Ralchenko, V.G.
|
|
1997
|
27-28 |
2-4 |
p. 417-421
5 p.
|
artikel
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| 141 |
Laser-induced physical vapour deposition of diamond-like carbon films
|
Müller, F.
|
|
1993
|
27-28 |
2-4 |
p. 233-238
6 p.
|
artikel
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| 142 |
Lithium addition during CVD diamond deposition using lithium tert.-butanolat as precursor
|
Sachdev, H
|
|
1997
|
27-28 |
2-4 |
p. 494-500
7 p.
|
artikel
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| 143 |
Localised vibrational modes in diamonds grown from mixed carbon isotopes
|
Collins, A.T.
|
|
1993
|
27-28 |
2-4 |
p. 136-141
6 p.
|
artikel
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| 144 |
Low pressure polymer precursor process for synthesis of hard glassy carbon and diamond films
|
Sun, Z.
|
|
1997
|
27-28 |
2-4 |
p. 230-234
5 p.
|
artikel
|
| 145 |
Low-temperature deposition of diamond in a temperature range from 70 °C to 700 °C
|
Ihara, M.
|
|
1992
|
27-28 |
2-4 |
p. 187-190
4 p.
|
artikel
|
| 146 |
Low-temperature deposition of diamond using chloromethane in a hot-filament chemical vapor deposition reactor
|
Hong, Franklin Chau-Nan
|
|
1993
|
27-28 |
2-4 |
p. 365-372
8 p.
|
artikel
|
| 147 |
Low temperature diamond film fabrication using magneto-active plasma CVD
|
Yuasa, M.
|
|
1992
|
27-28 |
2-4 |
p. 168-174
7 p.
|
artikel
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| 148 |
Mass spectrometry and diamond growth from CCl 4 H 2 gas mixtures
|
Mendes de Barros, R.C.
|
|
1997
|
27-28 |
2-4 |
p. 490-493
4 p.
|
artikel
|
| 149 |
Material properties of CVD diamond produced by the DC arc-jet
|
Lu, G.
|
|
1992
|
27-28 |
2-4 |
p. 134-136
3 p.
|
artikel
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| 150 |
Mechanism of substrate heating in diamond-forming low-pressure microwave discharges
|
Ohl, A.
|
|
1992
|
27-28 |
2-4 |
p. 243-247
5 p.
|
artikel
|
| 151 |
Mechanisms of CVD diamond nucleation and growth on mechanically scratched and virgin Si(100) surfaces
|
Demuynck, L.
|
|
1997
|
27-28 |
2-4 |
p. 235-239
5 p.
|
artikel
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| 152 |
Metastable diamond formation from solutions at atmospheric pressure
|
Pavel, E.
|
|
1993
|
27-28 |
2-4 |
p. 505-507
3 p.
|
artikel
|
| 153 |
Microcrystalline diamond phase by laser ablation of graphite
|
Bourdon, E.B.D.
|
|
1993
|
27-28 |
2-4 |
p. 425-431
7 p.
|
artikel
|
| 154 |
Microwave plasma chemical vapour deposition of high purity diamond films
|
Jubber, M.G.
|
|
1993
|
27-28 |
2-4 |
p. 402-406
5 p.
|
artikel
|
| 155 |
Monte-Carlo studies of energy characteristics of carbon plasma fluxes at deposition of diamond-like films
|
Lyubimov, V.V.
|
|
1992
|
27-28 |
2-4 |
p. 290-292
3 p.
|
artikel
|
| 156 |
Neutron damage of CVD diamond
|
Allers, L.
|
|
1997
|
27-28 |
2-4 |
p. 353-355
3 p.
|
artikel
|
| 157 |
New developments in the growth of epitaxial cubic boron nitride and diamond films on silicon
|
Clarke, R.
|
|
1992
|
27-28 |
2-4 |
p. 93-97
5 p.
|
artikel
|
| 158 |
New non-metallic catalysts for the synthesis of high pressure, high temperature diamond
|
Akaishi, Minoru
|
|
1993
|
27-28 |
2-4 |
p. 183-189
7 p.
|
artikel
|
| 159 |
Nickel-chemical vapour-deposited diamond interface studied by electron energy loss spectroscopy
|
Eimori, N.
|
|
1993
|
27-28 |
2-4 |
p. 537-541
5 p.
|
artikel
|
| 160 |
Nickel in diamond: an annealing study
|
Lawson, S.C.
|
|
1993
|
27-28 |
2-4 |
p. 130-135
6 p.
|
artikel
|
| 161 |
Nitrogen doping of diamond by ion implantation
|
Kalish, R.
|
|
1997
|
27-28 |
2-4 |
p. 516-520
5 p.
|
artikel
|
| 162 |
NMR characterisation of Si-based ultrafine laser formed powders
|
Tougne, P.
|
|
1992
|
27-28 |
2-4 |
p. 360-363
4 p.
|
artikel
|
| 163 |
Nucleation and growth of diamond on cemented carbides by hot-filament chemical vapor deposition
|
Mehlmann, A.K.
|
|
1993
|
27-28 |
2-4 |
p. 317-322
6 p.
|
artikel
|
| 164 |
Nucleation and growth of diamond particles from the vapor phase
|
Kostadinov, Ljubomir
|
|
1992
|
27-28 |
2-4 |
p. 157-160
4 p.
|
artikel
|
| 165 |
Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch
|
von Windheim, J.A.
|
|
1993
|
27-28 |
2-4 |
p. 438-442
5 p.
|
artikel
|
| 166 |
Nucleation mechanisms of diamond in plasma chemical vapor deposition
|
Yugo, S.
|
|
1993
|
27-28 |
2-4 |
p. 328-332
5 p.
|
artikel
|
| 167 |
Nucleation of diamond on vapour deposited graphite
|
Johansson, E.
|
|
1993
|
27-28 |
2-4 |
p. 383-388
6 p.
|
artikel
|
| 168 |
On the development of CVD diamond film morphology due to the twinning on {111} surfaces
|
Knuyt, G.
|
|
1997
|
27-28 |
2-4 |
p. 435-439
5 p.
|
artikel
|
| 169 |
On the growth process of hydrogenated amorphous carbon films on silicon
|
López, F.
|
|
1993
|
27-28 |
2-4 |
p. 229-232
4 p.
|
artikel
|
| 170 |
On the mechanical integrity ratio of diamond coatings
|
Brookes, C.A.
|
|
1997
|
27-28 |
2-4 |
p. 348-352
5 p.
|
artikel
|
| 171 |
Optimization of MW-PACVD diamond deposition parameters for high nucleation density and growth rate on Si3N4 substrate
|
Buchkremer-Hermanns, H.
|
|
1997
|
27-28 |
2-4 |
p. 411-416
6 p.
|
artikel
|
| 172 |
Photoconductive properties of thin film diamond
|
McKeag, Robert D.
|
|
1997
|
27-28 |
2-4 |
p. 374-380
7 p.
|
artikel
|
| 173 |
Photoelectrical characteristics of diamond UV detectors: Dependence on device design and film quality
|
Salvatori, S.
|
|
1997
|
27-28 |
2-4 |
p. 361-366
6 p.
|
artikel
|
| 174 |
Photoelectron diffraction analysis of diamond and metal-diamond interfaces
|
Kuettel, O.M.
|
|
1993
|
27-28 |
2-4 |
p. 548-551
4 p.
|
artikel
|
| 175 |
Photoluminescence and cathodoluminescence studies of semiconducting diamond
|
Freitas Jr., J.A.
|
|
1993
|
27-28 |
2-4 |
p. 87-91
5 p.
|
artikel
|
| 176 |
Piezoresistive property of CVD diamond films
|
Deguchi, Masahiro
|
|
1997
|
27-28 |
2-4 |
p. 367-373
7 p.
|
artikel
|
| 177 |
Plasma-assisted CVD of diamond films by hollow cathode arc discharge
|
Stiegler, J.
|
|
1993
|
27-28 |
2-4 |
p. 413-416
4 p.
|
artikel
|
| 178 |
Plasma diagnosis in d.c.-biased hot-filament-assisted chemical vapour deposition by double-probe method
|
Xuan, Zhenwu
|
|
1993
|
27-28 |
2-4 |
p. 476-480
5 p.
|
artikel
|
| 179 |
Polycrystalline diamond field-effect transistors
|
Tessmer, A.J.
|
|
1992
|
27-28 |
2-4 |
p. 89-92
4 p.
|
artikel
|
| 180 |
Preface to diamond 1992, proceedings of the 3rd international conference on the new diamond science and technology (ICNDST-3) jointly with the 3rd European conference on diamond, diamond-like and related coatings (diamond films '92), Heidelberg, Germany, August 31–September 4, 1992
|
Bachmann, Peter K.
|
|
1993
|
27-28 |
2-4 |
p. xi-
1 p.
|
artikel
|
| 181 |
Preface to the proceedings of the 2nd European conference on diamond, diamond-like and related coatings, Nice, France, September 2–6, 1991
|
Bachmann, Peter K.
|
|
1992
|
27-28 |
2-4 |
p. xv-
1 p.
|
artikel
|
| 182 |
Preface to the Proceedings of the 7th European Conference on Diamond, Diamond-Like and Related Materials (Diamond Films '96), Tours, France, September 8–13, 1996
|
Angus, John C.
|
|
1997
|
27-28 |
2-4 |
p. xi-
1 p.
|
artikel
|
| 183 |
Preferential incorporation of defects in monocrystalline diamond films
|
Yacobi, B.G.
|
|
1993
|
27-28 |
2-4 |
p. 92-99
8 p.
|
artikel
|
| 184 |
Preparation of smooth and nanocrystalline diamond films
|
Erz, R.
|
|
1993
|
27-28 |
2-4 |
p. 449-453
5 p.
|
artikel
|
| 185 |
Production and characterization of d.c. and h.f. plasma jet diamond films
|
Verven, G.
|
|
1993
|
27-28 |
2-4 |
p. 468-475
8 p.
|
artikel
|
| 186 |
Radiation hardness of polycrystalline diamond
|
Gonon, P.
|
|
1997
|
27-28 |
2-4 |
p. 314-319
6 p.
|
artikel
|
| 187 |
Radio-frequency hot-filament CVD of diamond
|
Mitura, Stanislaw
|
|
1992
|
27-28 |
2-4 |
p. 239-242
4 p.
|
artikel
|
| 188 |
Rapid synthesis of diamond by counter-flow liquid injection into an atmospheric pressure plasma jet
|
Pfender, E.
|
|
1992
|
27-28 |
2-4 |
p. 127-133
7 p.
|
artikel
|
| 189 |
Recent results on the deposition of diamond thin films by arcjet plasmas and diagnostic measurements of the plasma-surface region
|
Stalder, Kenneth R.
|
|
1993
|
27-28 |
2-4 |
p. 443-448
6 p.
|
artikel
|
| 190 |
Research and development in the field of diamond films in Russia
|
Spitsyn, B.V.
|
|
1993
|
27-28 |
2-4 |
p. 65-69
5 p.
|
artikel
|
| 191 |
RF-deposited a-C:H films from hydrogen-rich methane mixtures: relationships among plasma characteristics, deposition rates, and material properties
|
Barbarossa, V.
|
|
1992
|
27-28 |
2-4 |
p. 328-331
4 p.
|
artikel
|
| 192 |
R.f. plasma-assisted chemical vapour deposition of diamond-like carbon films on complex geometries
|
Dekempeneer, E.H.A.
|
|
1993
|
27-28 |
2-4 |
p. 272-277
6 p.
|
artikel
|
| 193 |
Selected area diamond deposition by control of the nucleation sites
|
Higuchi, K.
|
|
1992
|
27-28 |
2-4 |
p. 220-229
10 p.
|
artikel
|
| 194 |
Self-propagating high-temperature synthesis: a new method for the production of diamond-containing materials
|
Padyukov, Konstantin L.
|
|
1993
|
27-28 |
2-4 |
p. 207-210
4 p.
|
artikel
|
| 195 |
Small scale electronic transport in diamond microcrystals
|
Jaeger, M.D.
|
|
1997
|
27-28 |
2-4 |
p. 325-328
4 p.
|
artikel
|
| 196 |
Some aspects of diamond synthesis
|
Pavel, E.
|
|
1993
|
27-28 |
2-4 |
p. 500-504
5 p.
|
artikel
|
| 197 |
Some physical properties of diamond films grown by d.c.-glow discharge-enhanced hot-filament assisted chemical vapour deposition
|
Fabisiak, K.
|
|
1992
|
27-28 |
2-4 |
p. 83-88
6 p.
|
artikel
|
| 198 |
Spatially resolved measurements of absolute CH3 concentration in a hot-filament reactor
|
Wahl, E.H.
|
|
1997
|
27-28 |
2-4 |
p. 476-480
5 p.
|
artikel
|
| 199 |
Sponsors of diamond 1992
|
|
|
1993
|
27-28 |
2-4 |
p. xiii-
1 p.
|
artikel
|
| 200 |
Stress relief behaviour of diamond-like carbon films on glasses
|
Lee, Kwang-Ryeol
|
|
1993
|
27-28 |
2-4 |
p. 218-224
7 p.
|
artikel
|
| 201 |
Structure origins of diffraction pattern features of diamond-like films
|
Pilankiewicz, E.A.
|
|
1993
|
27-28 |
2-4 |
p. 573-574
2 p.
|
artikel
|
| 202 |
Studies of the optical emission from a hydrogen-hydrocarbon r.f. plasma jet stream during diamond film deposition
|
Baránková, H.
|
|
1993
|
27-28 |
2-4 |
p. 347-352
6 p.
|
artikel
|
| 203 |
Subject index
|
|
|
1992
|
27-28 |
2-4 |
p. xxi-xxvi
nvt p.
|
artikel
|
| 204 |
Subject index
|
|
|
1997
|
27-28 |
2-4 |
p. xx-xxv
nvt p.
|
artikel
|
| 205 |
Subject index
|
|
|
1993
|
27-28 |
2-4 |
p. xix-xxvi
nvt p.
|
artikel
|
| 206 |
Submicron characterization of B-C:H thin films produced by RF plasma CVD
|
Garci´a, A.
|
|
1992
|
27-28 |
2-4 |
p. 350-354
5 p.
|
artikel
|
| 207 |
Substrate temperature influence of c-BN thin film formation by IBED
|
Tanabe, N.
|
|
1992
|
27-28 |
2-4 |
p. 151-156
6 p.
|
artikel
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Supersonic DC-arcjet synthesis of diamond
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Loh, Michael H.
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1993
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Surface characterization of smooth heteroepitaxial diamond layers on β-SiC (001)
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Mizuochi, Y.
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1997
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5 p.
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Surface-sensitive characterization of diamond by ionization electron energy loss spectroscopy
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Tschersich, K.G.
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1993
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6 p.
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Synchrotron spike topography of natural Type IA diamond
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Moore, Moreton
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1993
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27-28 |
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6 p.
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artikel
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| 212 |
Systematic investigation of plasma emission spectra during microwave diamond deposition from CH4CO2 and C2H2CO2 gas mixtures
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Balestrino, G.
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1993
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27-28 |
2-4 |
p. 389-392
4 p.
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| 213 |
TEM observations of diamond films prepared by microwave plasma CVD
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Eto, H.
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1992
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7 p.
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| 214 |
Temperature measurement of atomic hydrogen produced by hot-filament dissociation in a CH4H2 mixture
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Vetterhöffer, J.
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1993
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27-28 |
2-4 |
p. 481-485
5 p.
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| 215 |
[100]-Textured diamond films for tribological applications
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Avigal, Y.
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1997
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2-4 |
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5 p.
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| 216 |
The characterization of single structure diamond heater and temperature sensor
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Yang, G.S.
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1997
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2-4 |
p. 394-397
4 p.
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artikel
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| 217 |
The chemical nature of the carbon precursor in bias-enhanced nucleation of CVD diamond
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Gouzman, I.
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1997
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6 p.
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artikel
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| 218 |
The deposition and characterization of β-SiC and diamond/β-SiC composite films
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Jiang, X.
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1993
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2-4 |
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5 p.
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| 219 |
The diamond Irvin curve
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Werner, M.
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1997
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p. 308-313
6 p.
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artikel
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| 220 |
The dilution effect of noble gases on the structure and composition of chemically vapour-deposited diamond films
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Shih, H.C.
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1993
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27-28 |
2-4 |
p. 531-536
6 p.
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artikel
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| 221 |
The effect of deposition conditions on carbon films prepared by laser ablation
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Gorbunov, A.A.
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1992
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27-28 |
2-4 |
p. 312-315
4 p.
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| 222 |
The effect of silicon surface preparation on the nucleation of diamond by chemical vapor deposition
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Avigal, Y.
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1992
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27-28 |
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p. 216-219
4 p.
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artikel
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| 223 |
The effect of substrate bias voltage on the nucleation of diamond crystals in a microwave plasma assisted chemical vapor deposition process
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Jiang, X.
|
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1993
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27-28 |
2-4 |
p. 407-412
6 p.
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artikel
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| 224 |
The effect of surface preparation on the nucleation of diamond on silicon
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Bienk, Ewa J.
|
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1993
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27-28 |
2-4 |
p. 432-437
6 p.
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artikel
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| 225 |
The geology of diamond: Time and depth profiles from inclusions
|
Harris, J.W.
|
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1993
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27-28 |
2-4 |
p. 75-79
5 p.
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artikel
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| 226 |
The growth of diamond using halogenated methane
|
Chu, C.H.
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1993
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27-28 |
2-4 |
p. 311-316
6 p.
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artikel
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| 227 |
The influence of boron doping on the structure and characteristics of diamond thin films
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Liao, X.Z.
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1997
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27-28 |
2-4 |
p. 521-525
5 p.
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artikel
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| 228 |
The influence of methane concentration, substrate temperature, and pressure on the morphology of diamond films grown by dc plasma jet CVD
|
Boudina, A.
|
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1992
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27-28 |
2-4 |
p. 248-254
7 p.
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artikel
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| 229 |
The influence of substrate temperature during ion beam deposition on the diamond-like or graphitic nature of carbon films
|
Lifshitz, Y.
|
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1993
|
27-28 |
2-4 |
p. 285-290
6 p.
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artikel
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| 230 |
The Raman spectroscopy of diamond films deposited on metal and insulator substrates with varying thermal expansion coefficient
|
Fabisiak, K.
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1992
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27-28 |
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p. 77-82
6 p.
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artikel
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| 231 |
Thermal resistance and electrical insulation of thin low-temperature-deposited diamond films
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Verhoeven, H.
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1997
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5 p.
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| 232 |
Thermodynamics and kinetics for nucleation of diamond in the chemical vapor deposition process
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Hwang, Nong M.
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1992
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4 p.
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| 233 |
The roles of H and O atoms in diamond growth
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Dementjev, A.P.
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1997
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27-28 |
2-4 |
p. 486-489
4 p.
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artikel
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| 234 |
Topographic methods for studying defects in diamonds
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Lang, A.R.
|
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1993
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27-28 |
2-4 |
p. 106-114
9 p.
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artikel
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| 235 |
Transmission electron microscope study of heteroepitaxial diamond on Pt (111)
|
Tarutani, Masayoshi
|
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1997
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27-28 |
2-4 |
p. 272-276
5 p.
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| 236 |
Type IIb diamond thin films deposited onto near-colorless natural gem diamonds
|
Fritsch, Emmanuel
|
|
1993
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27-28 |
2-4 |
p. 70-74
5 p.
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artikel
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| 237 |
UV laser processing of diamond films: effects of irradiation conditions on the properties of laser-treated diamond film surfaces
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Pimenov, S.M.
|
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1993
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27-28 |
2-4 |
p. 291-297
7 p.
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| 238 |
UV photon-assisted crystallization of carbon
|
Sokołowska, A.
|
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1993
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2-4 |
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4 p.
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| 239 |
Vacancy complexes in diamond
|
Davies, Gordon
|
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1993
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27-28 |
2-4 |
p. 80-86
7 p.
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artikel
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| 240 |
Vapor growth of diamond with silane
|
Miyata, Koichi
|
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1992
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27-28 |
2-4 |
p. 392-396
5 p.
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| 241 |
X.P.S. analysis of the Si substrate surface pretreatment for diamond film deposition
|
Ascarelli, P.
|
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1992
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27-28 |
2-4 |
p. 211-215
5 p.
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| 242 |
X-ray diffraction imaging of man-made and natural diamond
|
Black, David R.
|
|
1993
|
27-28 |
2-4 |
p. 121-125
5 p.
|
artikel
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| 243 |
X-ray emission spectroscopy studies of structural properties of diamond-like carbon films
|
Strel'nitskij, V.E.
|
|
1992
|
27-28 |
2-4 |
p. 341-344
4 p.
|
artikel
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| 244 |
X-Ray study of the interface layer between low temperature deposited diamond film and the silicon substrate
|
Lu, F.X.
|
|
1993
|
27-28 |
2-4 |
p. 575-579
5 p.
|
artikel
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