| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A diamond driver-active load pair fabricated by ion implantation
|
Zeidler, J.R.
|
|
1993
|
2 |
10 |
p. 1341-1343
3 p.
|
artikel
|
| 2 |
Analysis of the growth process of a-C:H layers
|
Richter, F.
|
|
1993
|
2 |
10 |
p. 1344-1349
6 p.
|
artikel
|
| 3 |
Analysis using high energy beam techniques of the surface carbonaceous layers of silicon and tantalum substrates used in the chemical vapour deposition synthesis of diamond
|
Terranova, M.L.
|
|
1993
|
2 |
10 |
p. 1365-1369
5 p.
|
artikel
|
| 4 |
Conference calendar
|
|
|
1993
|
2 |
10 |
p. 1370-1371
2 p.
|
artikel
|
| 5 |
Cumulative author index
|
|
|
1993
|
2 |
10 |
p. 1372-1375
4 p.
|
artikel
|
| 6 |
Deposition and properties of polycluster diamond films
|
Fedoseev, D.V.
|
|
1993
|
2 |
10 |
p. 1327-1329
3 p.
|
artikel
|
| 7 |
Deposition of carbon films by a filtered cathodic arc
|
Kühn, M.
|
|
1993
|
2 |
10 |
p. 1350-1354
5 p.
|
artikel
|
| 8 |
Electrical characteristic frequency dispersion of diamond polycrystalline films
|
Ermakova, O.N.
|
|
1993
|
2 |
10 |
p. 1336-1340
5 p.
|
artikel
|
| 9 |
Electronic properties of amorphous carbon (a-C:H)
|
Schütte, Susanne
|
|
1993
|
2 |
10 |
p. 1360-1364
5 p.
|
artikel
|
| 10 |
Growth of diamond thin films by ECR plasma-assisted CVD at low pressures and temperatures
|
Jin, Shu
|
|
1993
|
2 |
10 |
p. 1355-1359
5 p.
|
artikel
|
| 11 |
Ohmic contacts to epitaxial and natural diamond
|
Hewett, C.A.
|
|
1993
|
2 |
10 |
p. 1319-1321
3 p.
|
artikel
|
| 12 |
Properties of stoichiometric and silicon-rich polycrystalline silicon carbide films deposited by chemical vapour deposition on various substrates
|
Kowalkowski, R.
|
|
1993
|
2 |
10 |
p. 1330-1335
6 p.
|
artikel
|
| 13 |
Study of high pressure diamond synthesis by Mössbauer spectroscopy
|
de Oliveira, L.S.
|
|
1993
|
2 |
10 |
p. 1322-1326
5 p.
|
artikel
|
| 14 |
Subject indexthor index
|
|
|
1993
|
2 |
10 |
p. 1376-1377
2 p.
|
artikel
|
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