nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Author Index for Volume 13
|
|
|
2004 |
13 |
9 |
p. 1745-1751 7 p. |
artikel |
2 |
Diamond-like carbon films: electron spin resonance (ESR) and Raman spectroscopy
|
Druz, B |
|
2004 |
13 |
9 |
p. 1592-1602 11 p. |
artikel |
3 |
Dielectric property of thick freestanding diamond films by high power arcjet operating at gas recycling mode
|
Lu, F.X |
|
2004 |
13 |
9 |
p. 1714-1718 5 p. |
artikel |
4 |
Drain avalanche breakdown and gate instabilities in 4H-SiC MESFET's
|
Lv, Hong-Liang |
|
2004 |
13 |
9 |
p. 1587-1591 5 p. |
artikel |
5 |
Editorial Board
|
|
|
2004 |
13 |
9 |
p. IFC- 1 p. |
artikel |
6 |
Effect of Al additions and AlN interlayers on the stabilization of cBN sputtered thin films
|
Otaño-Rivera, Wilfredo |
|
2004 |
13 |
9 |
p. 1690-1696 7 p. |
artikel |
7 |
Effect of the graphite perfection on the HP–HT diamond synthesis in a Ni–Mn–C system
|
Skury, Ana Lucia D. |
|
2004 |
13 |
9 |
p. 1725-1730 6 p. |
artikel |
8 |
Erratum to “Optical properties of diamond-like carbon films containing SiO x ”
|
Franta, Daniel |
|
2004 |
13 |
9 |
p. 1744- 1 p. |
artikel |
9 |
Experimental design methodology applied to study a diamond purification process
|
Skury, A.L.D |
|
2004 |
13 |
9 |
p. 1638-1644 7 p. |
artikel |
10 |
Formation of nano-scale tubular structure of single crystal diamond
|
Chih, Y.K |
|
2004 |
13 |
9 |
p. 1614-1617 4 p. |
artikel |
11 |
Fretting wear of thin diamond films deposited on steel substrates
|
Kreines, L |
|
2004 |
13 |
9 |
p. 1731-1739 9 p. |
artikel |
12 |
Identification of nitrogen decorated vacancies in CVD diamond films using positron annihilation coincidence Doppler broadening spectroscopy
|
Sachdeva, A |
|
2004 |
13 |
9 |
p. 1719-1724 6 p. |
artikel |
13 |
Keyword Listing
|
|
|
2004 |
13 |
9 |
p. I- 1 p. |
artikel |
14 |
Nearly amorphous to epitaxial growth of aluminum nitride films
|
Leung, T.T |
|
2004 |
13 |
9 |
p. 1603-1608 6 p. |
artikel |
15 |
Nucleation and growth of cubic boron nitride using a Ca–B–N solvent
|
Fukunaga, O |
|
2004 |
13 |
9 |
p. 1709-1713 5 p. |
artikel |
16 |
OBIC analysis for 1.3 kV 6H–SiC p+n planar bipolar diodes protected by Junction Termination Extension
|
Raynaud, C |
|
2004 |
13 |
9 |
p. 1697-1703 7 p. |
artikel |
17 |
Plasma etching carbon nanotube arrays and the field emission properties
|
Liu, Yuming |
|
2004 |
13 |
9 |
p. 1609-1613 5 p. |
artikel |
18 |
Properties of nanocrystalline diamond thin films grown by MPCVD for biomedical implant purposes
|
Fries, Marc D |
|
2004 |
13 |
9 |
p. 1740-1743 4 p. |
artikel |
19 |
Removal of sp2-boron nitride transition layer in the growth of cubic boron nitride films
|
Wong, S.F |
|
2004 |
13 |
9 |
p. 1632-1637 6 p. |
artikel |
20 |
Stress reduction in a-C:H coatings through the addition of nitrogen to the feed gas
|
Rabbani, F. |
|
2004 |
13 |
9 |
p. 1645-1657 13 p. |
artikel |
21 |
Structural and mechanical properties of a-C:H thin films grown by RF-PECVD
|
Tomasella, E |
|
2004 |
13 |
9 |
p. 1618-1624 7 p. |
artikel |
22 |
Study of mechanical properties of CVD diamond on SiC substrates
|
Chowdhury, S |
|
2004 |
13 |
9 |
p. 1625-1631 7 p. |
artikel |
23 |
Synthesis of DLC films by electrodeposition technique using formic acid as electrolyte
|
Gupta, S |
|
2004 |
13 |
9 |
p. 1680-1689 10 p. |
artikel |
24 |
Synthesis of thick and high quality cubic boron nitride films by r.f. bias assisted d.c. jet plasma chemical vapor deposition
|
Yu, J |
|
2004 |
13 |
9 |
p. 1704-1708 5 p. |
artikel |
25 |
The nature of ion-implanted contacts to polycrystalline diamond films
|
Avigal, Y |
|
2004 |
13 |
9 |
p. 1674-1679 6 p. |
artikel |
26 |
Three historical ‘asteriated’ hydrogen-rich diamonds: growth history and sector-dependent impurity incorporation
|
Rondeau, Benjamin |
|
2004 |
13 |
9 |
p. 1658-1673 16 p. |
artikel |