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                             244 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acknowledgment 1992
 2-4 p. xvii-
1 p.
 artikel
2 A comparative study of laminar and turbulent oxygen-acetylene flames for diamond deposition Alers, P.
 1993
 2-4 p. 393-396
4 p.
 artikel
3 A micro-IBIC comparison between natural and CVD diamond Manfredotti, C.
 1997
 2-4 p. 320-324
5 p.
 artikel
4 Amorphous SiC PVD coatings Knotek, O.
 1993
 2-4 p. 528-530
3 p.
 artikel
5 A new method for the generation of diamond nuclei by plasma CVD Yugo, S.
 1992
 2-4 p. 388-391
4 p.
 artikel
6 Annihilation of nucleation sites during diamond CVD Jeoung Woo Kim,
 1992
 2-4 p. 200-204
5 p.
 artikel
7 An r.f. plasma jet applied to diamond, glassy carbon and silicon carbide film synthesis Bárdoš, L.
 1993
 2-4 p. 517-522
6 p.
 artikel
8 An X-ray photoelectron spectroscopy study of the surface layers between diamond crystallites and silicon substrate deposited by microwave-plasma-assisted chemical vapour deposition Haq, S.
 1993
 2-4 p. 558-561
4 p.
 artikel
9 A study on synthesis of diamond by capacitively coupled RF plasma-assisted chemical vapor deposition Lee, S.R.
 1992
 2-4 p. 235-238
4 p.
 artikel
10 Atomic configuration at the β-SiCc(2 × 2) reconstructed surface Badziag, P.
 1992
 2-4 p. 285-289
5 p.
 artikel
11 Author index 1992
 2-4 p. xix-xxx
nvt p.
 artikel
12 Author index 1993
 2-4 p. xvii-xviii
nvt p.
 artikel
13 Author index 1997
 2-4 p. xvii-xix
nvt p.
 artikel
14 Boronated tetrahedral amorphous carbon (ta-C:B) Chhowalla, M.
 1997
 2-4 p. 207-211
5 p.
 artikel
15 Characterisation of the AgC:H deposition process Harnack, J.T.
 1992
 2-4 p. 301-306
6 p.
 artikel
16 Characterization and growth of carbon phases synthesized by high temperature carbon ion implantation into copper Cabioc'h, T.
 1997
 2-4 p. 261-265
5 p.
 artikel
17 Characterization of a CH4-RF-plasma by ion flux, Langmuir probe, and optical emission spectroscopy measurements Weiler, M.
 1992
 2-4 p. 121-126
6 p.
 artikel
18 Characterization of catalytically synthesized turbostratic carbon films used for improved rates of diamond nucleation Oral, Baybars
 1993
 2-4 p. 225-228
4 p.
 artikel
19 Characterization of diamond-like carbon films by fine scale indentation measurements Smith, J.
 1992
 2-4 p. 355-359
5 p.
 artikel
20 Characterization of interfaces between hydrogenated amorphous carbon films and steel substrates using high resolution cross-sectional transmission electron microscopy Sjöström, H.
 1993
 2-4 p. 562-566
5 p.
 artikel
21 Characterization of ion-beam-deposited diamond-like carbon films Liebler, V.
 1993
 2-4 p. 584-589
6 p.
 artikel
22 Characterization of metal-diamond interfaces: Electron affinity and Schottky barrier height Baumann, P.K.
 1997
 2-4 p. 398-402
5 p.
 artikel
23 Characterization of the microstructure of diamond pyramidal microtip emitters Kang, W.P.
 1997
 2-4 p. 403-405
3 p.
 artikel
24 Chemical vapour deposition and characterization of smooth {100}-faceted diamond films Wild, C.
 1993
 2-4 p. 158-168
11 p.
 artikel
25 CO2-laser-induced gas-phase synthesis of micron-sized diamond powders: recent results and future developments Buerki, P.R.
 1993
 2-4 p. 174-182
9 p.
 artikel
26 Combined effect of nitrogen and pulsed microwave plasma on diamond growth Chatei, Hassan
 1997
 2-4 p. 505-510
6 p.
 artikel
27 Combustion flame grown diamond films Golozar, M.A.
 1992
 2-4 p. 262-266
5 p.
 artikel
28 Committees 1993
 2-4 p. xv-xvi
nvt p.
 artikel
29 Comparison of laser and O2 plasma etching of diamond-like carbon films Ralchenko, V.G.
 1993
 2-4 p. 211-217
7 p.
 artikel
30 Complications of halogen-assisted chemical vapor deposition of diamond Wong, M.S.
 1992
 2-4 p. 369-372
4 p.
 artikel
31 Conference calendar 1993
 2-4 p. xxvii-xxix
nvt p.
 artikel
32 Conference calendar 1997
 2-4 p. xv-xvi
nvt p.
 artikel
33 Conference calendar 1992
 2-4 p. xxvii-
1 p.
 artikel
34 Correlation between ion-flux and microstructure of a-C:H films Ehrhardt, H.
 1992
 2-4 p. 316-320
5 p.
 artikel
35 Crystal growth and gas ratio effect of diamond films synthesized by oxyacetylene flames Zhu, W.
 1993
 2-4 p. 491-495
5 p.
 artikel
36 Cumulative author index 1992
 2-4 p. xxix-xxxx
nvt p.
 artikel
37 Cumulative author index 1993
 2-4 p. xxxi-xxxii
nvt p.
 artikel
38 Cumulative subject index 1992
 2-4 p. xxx-
1 p.
 artikel
39 Cumulative subject index 1993
 2-4 p. xxxiii-xli
nvt p.
 artikel
40 Defined etching of carbon-diamond films on silicon using an oxygen plasma with titanium masking Chan, K.K.
 1992
 2-4 p. 281-284
4 p.
 artikel
41 Deposition of CVD diamond onto boron carbide substrates May, P.W.
 1997
 2-4 p. 450-455
6 p.
 artikel
42 Deposition of dense C:H films at elevated substrate temperature von Keudell, A.
 1993
 2-4 p. 251-254
4 p.
 artikel
43 Deposition of diamond-like carbon films by photon-enhanced chemical vapour deposition of methane using a windowless hydrogen lamp White, A.J.
 1993
 2-4 p. 255-258
4 p.
 artikel
44 Deposition of non-graphitic carbon films by low carbon particle energies Ullmann, J.
 1992
 2-4 p. 321-327
7 p.
 artikel
45 Design-to-implementation case studies of CVD diamond in r.f./microwave package and detector applications Gray, K.J.
 1997
 2-4 p. 191-195
5 p.
 artikel
46 Determination ofsp3/sp2 ratio in diamond-like films of a-C:H Demichelis, F.
 1992
 2-4 p. 298-300
3 p.
 artikel
47 Diamond chemical vapour deposition using tantalum filaments in H2CH4O2 gas mixtures Brückner, J.
 1993
 2-4 p. 373-377
5 p.
 artikel
48 Diamond coatings for IR window applications Miller, A.J.
 1997
 2-4 p. 386-389
4 p.
 artikel
49 Diamond crystallites nucleation on sintered tungsten: temperature and thermal treatment effects Polini, R.
 1992
 2-4 p. 205-210
6 p.
 artikel
50 Diamond deposition from an ArCCl4H2 plasma jet at 13.3 kPa Kotaki, T.
 1993
 2-4 p. 342-346
5 p.
 artikel
51 Diamond deposition in a bell-jar reactor: influence of the plasma and substrate parameters on the microstructure and growth rate Gicquel, A.
 1993
 2-4 p. 417-424
8 p.
 artikel
52 Diamond deposition in a microwave electrode discharge at reduced pressures Bárdoš, L.
 1997
 2-4 p. 224-229
6 p.
 artikel
53 Diamond deposition on noble metals Kalss, W.
 1997
 2-4 p. 240-246
7 p.
 artikel
54 Diamond deposition with ArCO2CH4H2 plasma jets Aoyama, K.
 1993
 2-4 p. 337-341
5 p.
 artikel
55 Diamond film preparation by arc-discharge plasma-jet-CVD and thermodynamic calculation of the equilibrium gas composition Boudina, A.
 1992
 2-4 p. 380-387
8 p.
 artikel
56 Diamond film synthesis on Mo in thermal RF plasma Hernberg, R.
 1992
 2-4 p. 255-261
7 p.
 artikel
57 Diamond formation from a system of SiC and a metal Hong, Shi Ming
 1993
 2-4 p. 508-511
4 p.
 artikel
58 Diamond growth by methane injection into hydrogen-oxygen flames Glumac, N.G.
 1993
 2-4 p. 169-173
5 p.
 artikel
59 Diamond growth chemistry: Its observation using real time in situ molecular beam scattering techniques Loh, K.P.
 1997
 2-4 p. 219-223
5 p.
 artikel
60 Diamond growth in a direct-current low-pressure supersonic plasmajet Laimer, J.
 1997
 2-4 p. 406-410
5 p.
 artikel
61 Diamond growth on a large area and some aspects of diamond nucleation Samokhvalov, N.V.
 1997
 2-4 p. 426-429
4 p.
 artikel
62 Diamond homoepitaxy by chemical vapor deposition Badzian, Andrzej
 1993
 2-4 p. 147-157
11 p.
 artikel
63 Diamond homoepitaxy by hot-filament chemical vapor deposition Avigal, Y.
 1993
 2-4 p. 462-467
6 p.
 artikel
64 Diamond in the USA Yoder, Max N.
 1993
 2-4 p. 59-64
6 p.
 artikel
65 Diamond-like films deposition by magnetron sputtering with additional ionization Chuzhko, R.K.
 1992
 2-4 p. 332-333
2 p.
 artikel
66 Diamond nucleation enhancement by hydrofluoric acid etching of silicon substrate Schelz, S.
 1997
 2-4 p. 440-443
4 p.
 artikel
67 Diamond nucleation on pretreated substrates Kobayashi, Kenji
 1993
 2-4 p. 278-284
7 p.
 artikel
68 Diamond nucleation on steel substrates Spinnewyn, J.
 1993
 2-4 p. 361-364
4 p.
 artikel
69 Diamond synthesis by CO2 laser irradiation Kikuchi, Noribumi
 1993
 2-4 p. 190-196
7 p.
 artikel
70 Diamond synthesis on substrates treated by collision with particles Takarada, T.
 1993
 2-4 p. 323-327
5 p.
 artikel
71 Diffusion of implanted nickel in diamond Filipp, A.R.
 1992
 2-4 p. 271-276
6 p.
 artikel
72 DLC film preparation by LASER-ARC and properties study Scheibe, H.-J.
 1992
 2-4 p. 98-103
6 p.
 artikel
73 Doping of amorphous-hydrogenated carbon films by ion implantation Amir, O.
 1992
 2-4 p. 364-368
5 p.
 artikel
74 E-BN crystallization under thermodynamic instability (p,T) conditions Sokołowska, A.
 1992
 2-4 p. 334-336
3 p.
 artikel
75 Effect of high supersaturation at the initial stage on diamond nucleation phenomena Mitsuda, Yoshitaka
 1993
 2-4 p. 333-336
4 p.
 artikel
76 Effect of surface species concentrations and temperature on diamond film morphology in inductively coupled r.f. plasma CVD Lindsay, J.W.
 1997
 2-4 p. 481-485
5 p.
 artikel
77 Effect of the buoyancy force on diamond formation during synthesis under a high pressure Lee, Jae-Kap
 1993
 2-4 p. 496-499
4 p.
 artikel
78 Effects of electron and atomic hydrogen irradiation on gas-source molecular beam epitaxy of diamond with pure methane Nishimori, Toshihiko
 1997
 2-4 p. 463-467
5 p.
 artikel
79 Effects of fluorine implantation into a-C:H thin films Wong, S.P.
 1993
 2-4 p. 580-583
4 p.
 artikel
80 Effects of Mo(CO)6 and W(CO)6 introduced to plasma on diamond synthesis by microwave plasma CVD Nagano, Masamitsu
 1997
 2-4 p. 501-504
4 p.
 artikel
81 Effects of simultaneous boron and nitrogen addition on hot-filament CVD diamond growth Hartmann, P.
 1997
 2-4 p. 456-462
7 p.
 artikel
82 Effects of UV irradiation on the growth of diamond at lower temperatures Kamo, M.
 1992
 2-4 p. 104-108
5 p.
 artikel
83 Electron beam assisted deposition of sharp needles from a decomposed gas mixture of methane and hydrogen Abe, Atsuyoshi
 1992
 2-4 p. 267-270
4 p.
 artikel
84 Electronic structure of diamond-like carbon Robertson, J.
 1997
 2-4 p. 212-218
7 p.
 artikel
85 Energy distribution of H atom and C2 radical during diamond growth in H2/ArCH4O2 plasma Mitsuda, Yoshitaka
 1997
 2-4 p. 468-471
4 p.
 artikel
86 Enhanced deposition rate of diamond in atmospheric pressure plasma CVD: Effects of a secondary discharge Baldwin Jr., Scott K.
 1997
 2-4 p. 202-206
5 p.
 artikel
87 Enhancement/depletion MESFETs of diamond and their logic circuits Hokazono, A.
 1997
 2-4 p. 339-343
5 p.
 artikel
88 Epitaxial growth of diamond thin films on foreign substrates Inuzuka, Tadao
 1992
 2-4 p. 175-179
5 p.
 artikel
89 Epitaxial growth of unintentionally p-type doped β-SiC single crystal layers Weber, Thomas
 1992
 2-4 p. 147-150
4 p.
 artikel
90 Epitaxial nucleation of diamond on β-SiC via bias-enhanced microwave plasma chemical vapor deposition Stoner, B.R.
 1993
 2-4 p. 142-146
5 p.
 artikel
91 Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide Davis, Robert F.
 1992
 2-4 p. 109-120
12 p.
 artikel
92 ESR studies of incorporation of phosphorus into high-pressure synthetic diamond Isoya, J.
 1997
 2-4 p. 356-360
5 p.
 artikel
93 Etching of polycrystalline diamond and amorphous carbon films by RIE Dorsch, O.
 1992
 2-4 p. 277-280
4 p.
 artikel
94 Evaluation of diamond-like carbon-coated orthopaedic implants Dowling, D.P.
 1997
 2-4 p. 390-393
4 p.
 artikel
95 Evolution of the structure of ultrafine SiC-laser-formed powders with synthesis conditions Tougne, P.
 1993
 2-4 p. 486-490
5 p.
 artikel
96 Examination of the effects of nitrogen on the CVD diamond growth mechanism using in situ molecular beam mass spectrometry Tsang, R.S.
 1997
 2-4 p. 247-254
8 p.
 artikel
97 Excitonic recombination radiation as characterization of diamonds using cathodoluminescence Kawarada, H.
 1993
 2-4 p. 100-105
6 p.
 artikel
98 Features of diamond deposition on modified silica glass substrates Terranova, M.L.
 1997
 2-4 p. 444-449
6 p.
 artikel
99 Formation of an oriented β-SiC layer during the initial growth phase of diamond on silicon (100) Maillard-Schaller, E.
 1997
 2-4 p. 282-285
4 p.
 artikel
100 Formation of nanocrystalline diamond by hydrocarbon plasma beam deposition Sattel, S.
 1997
 2-4 p. 255-260
6 p.
 artikel
101 Free-standing diamond film preparation using copper substrate Fan, Qi Hua
 1997
 2-4 p. 422-425
4 p.
 artikel
102 Geometric modeling of the diamond-β-SiC heteroepitaxial interface Zhu, W.
 1993
 2-4 p. 590-596
7 p.
 artikel
103 Growth, doping and characterization of Al x Ga1 − x N thin film alloys on 6H-SiC(0001) substrates Bremser, M.D.
 1997
 2-4 p. 196-201
6 p.
 artikel
104 Growth mechanisms of diamond crystals and films prepared by chemical vapor deposition Bonnot, A.M.
 1992
 2-4 p. 230-234
5 p.
 artikel
105 Growth of cubic boron nitride and boron-carbon-nitrogen coatings using N-trimethylborazine in an electron cyclotron resonance plasma process Weber, A.
 1993
 2-4 p. 201-206
6 p.
 artikel
106 Growth of cubic boron nitride by chemical vapor deposition and high-pressure high-temperature synthesis Demazeau, Gérard
 1993
 2-4 p. 197-200
4 p.
 artikel
107 Growth of cubic boron nitride from vapor phase Saitoh, Hidetoshi
 1992
 2-4 p. 137-146
10 p.
 artikel
108 Growth of diamond films from a continuous or interrupted CF4 supply Lee, J.-J.
 1997
 2-4 p. 511-515
5 p.
 artikel
109 H actinometry with CF4 addition in microwave plasma-assisted chemical vapor deposition of diamond Ferreira, N.G.
 1997
 2-4 p. 472-475
4 p.
 artikel
110 Heteroepitaxial diamond growth process on platinum (111) Tachibana, Takeshi
 1997
 2-4 p. 266-271
6 p.
 artikel
111 High-temperature epitaxy of diamond in a turbulent flame Snail, K.A.
 1992
 2-4 p. 180-186
7 p.
 artikel
112 High temperature polycrystalline diamond metal-insulator-semiconductor field-effect-transistor Pang, Lisa Y.S.
 1997
 2-4 p. 333-338
6 p.
 artikel
113 High temperature Young's modulus of polycrystalline diamond Werner, M.
 1997
 2-4 p. 344-347
4 p.
 artikel
114 High-voltage Schottky diode on epitaxial diamond layer Ebert, W.
 1997
 2-4 p. 329-332
4 p.
 artikel
115 1H NMR studies on the effects of annealing on chemical-vapor-deposited (CVD) diamond Mitra, S.
 1993
 2-4 p. 126-129
4 p.
 artikel
116 Hydrogen distribution and heterogeneity of chemical bonds in surface and internal layers of a-C:H films Ralchenko, V.G.
 1992
 2-4 p. 345-349
5 p.
 artikel
117 Hydrogen-free amorphous carbon coatings deposited by the arc ion-plating process Knotek, O.
 1993
 2-4 p. 243-245
3 p.
 artikel
118 Hydrogen-related gap states in the near surface of chemical vapor deposited homoepitaxial diamond films Hayashi, Kazushi
 1997
 2-4 p. 303-307
5 p.
 artikel
119 Identification of structural defects in diamond-like films based on the comparison of X-rayCK α emission spectra with simple band structure calculations Kurmaev, E.Z.
 1992
 2-4 p. 337-340
4 p.
 artikel
120 Implementation of large-scale deposition of diamond films by combustion synthesis Wang, D.Y.
 1993
 2-4 p. 304-310
7 p.
 artikel
121 Inelastic neutron scattering of amorphous hydrogenated carbon Honeybone, P.J.R.
 1992
 2-4 p. 293-297
5 p.
 artikel
122 Influence of atomic hydrogen gradients on the growth rate and nucleation of diamond produced by microwave plasma assisted deposition Ohl, A.
 1993
 2-4 p. 298-303
6 p.
 artikel
123 Influence of π-bonded clusters on the electronic properties of diamond-like carbon films Bounouh, Y.
 1993
 2-4 p. 259-265
7 p.
 artikel
124 Influence of gas phase parameters on the deposition kinetics and morphology of thin diamond films deposited by HFCVD and MWCVD technique Beckmann, R.
 1992
 2-4 p. 164-167
4 p.
 artikel
125 Influence of ion energy and flux composition on the properties of plasma-deposited amorphous carbon and amorphous hydrogenated carbon films Kleber, R.
 1993
 2-4 p. 246-250
5 p.
 artikel
126 Influence of sputtering target material on the formation of cubic BN thin films by ion beam enhanced deposition Tanabe, N.
 1993
 2-4 p. 512-516
5 p.
 artikel
127 Influence of the electron cyclotron resonance microwave plasma on growth and properties of diamond-like carbon films deposited onto r.f. biased substrates Dušek, V.
 1993
 2-4 p. 397-401
5 p.
 artikel
128 Initial results of a novel pre-deposition seeding technique for achieving an ultra-high nucleation density for CVD diamond growth Malshe, A.P.
 1997
 2-4 p. 430-434
5 p.
 artikel
129 In-situ investigation of low-pressure diamond growth by elastic scattering of light and reflectance spectroscopy Bonnot, A.M.
 1992
 2-4 p. 161-163
3 p.
 artikel
130 Insulating diamond coatings on tungsten electrodes Matthée, Th.
 1997
 2-4 p. 293-297
5 p.
 artikel
131 Interface structures for epitaxy of diamond on Si(100) Verwoerd, W.S.
 1992
 2-4 p. 195-199
5 p.
 artikel
132 Investigation of diamond C(111) (2 × 1) surface exposed to hydrogen and hydrocarbon species using second-harmonic generation and sum frequency generation Seki, H.
 1993
 2-4 p. 567-572
6 p.
 artikel
133 Investigation of diamond thin film growth on ferrous surfaces Ahn, J.
 1993
 2-4 p. 353-356
4 p.
 artikel
134 Investigation of rotating d.c. discharge for diamond deposition Nesládek, M.
 1993
 2-4 p. 357-360
4 p.
 artikel
135 Investigation of the c-BN/h-BN phase transformation at normal pressure Sachdev, H.
 1997
 2-4 p. 286-292
7 p.
 artikel
136 Ion beam assisted growth of dense diamond-like carbon Andre´, B.
 1992
 2-4 p. 307-311
5 p.
 artikel
137 Ion energy distributions from electron cyclotron resonance methane plasmas Jacob, W.
 1993
 2-4 p. 378-382
5 p.
 artikel
138 Ion etching behaviour and surface binding energies of hard diamond-like carbon and microwave chemical vapour deposition diamond films Ullmann, J.
 1993
 2-4 p. 266-271
6 p.
 artikel
139 Kinetics of diamond growth on Si(100) substrate monitored by electron spectroscopy Le Normand, F.
 1993
 2-4 p. 552-557
6 p.
 artikel
140 Large-area diamond deposition by microwave plasma Ralchenko, V.G.
 1997
 2-4 p. 417-421
5 p.
 artikel
141 Laser-induced physical vapour deposition of diamond-like carbon films Müller, F.
 1993
 2-4 p. 233-238
6 p.
 artikel
142 Lithium addition during CVD diamond deposition using lithium tert.-butanolat as precursor Sachdev, H
 1997
 2-4 p. 494-500
7 p.
 artikel
143 Localised vibrational modes in diamonds grown from mixed carbon isotopes Collins, A.T.
 1993
 2-4 p. 136-141
6 p.
 artikel
144 Low pressure polymer precursor process for synthesis of hard glassy carbon and diamond films Sun, Z.
 1997
 2-4 p. 230-234
5 p.
 artikel
145 Low-temperature deposition of diamond in a temperature range from 70 °C to 700 °C Ihara, M.
 1992
 2-4 p. 187-190
4 p.
 artikel
146 Low-temperature deposition of diamond using chloromethane in a hot-filament chemical vapor deposition reactor Hong, Franklin Chau-Nan
 1993
 2-4 p. 365-372
8 p.
 artikel
147 Low temperature diamond film fabrication using magneto-active plasma CVD Yuasa, M.
 1992
 2-4 p. 168-174
7 p.
 artikel
148 Mass spectrometry and diamond growth from CCl 4 H 2 gas mixtures Mendes de Barros, R.C.
 1997
 2-4 p. 490-493
4 p.
 artikel
149 Material properties of CVD diamond produced by the DC arc-jet Lu, G.
 1992
 2-4 p. 134-136
3 p.
 artikel
150 Mechanism of substrate heating in diamond-forming low-pressure microwave discharges Ohl, A.
 1992
 2-4 p. 243-247
5 p.
 artikel
151 Mechanisms of CVD diamond nucleation and growth on mechanically scratched and virgin Si(100) surfaces Demuynck, L.
 1997
 2-4 p. 235-239
5 p.
 artikel
152 Metastable diamond formation from solutions at atmospheric pressure Pavel, E.
 1993
 2-4 p. 505-507
3 p.
 artikel
153 Microcrystalline diamond phase by laser ablation of graphite Bourdon, E.B.D.
 1993
 2-4 p. 425-431
7 p.
 artikel
154 Microwave plasma chemical vapour deposition of high purity diamond films Jubber, M.G.
 1993
 2-4 p. 402-406
5 p.
 artikel
155 Monte-Carlo studies of energy characteristics of carbon plasma fluxes at deposition of diamond-like films Lyubimov, V.V.
 1992
 2-4 p. 290-292
3 p.
 artikel
156 Neutron damage of CVD diamond Allers, L.
 1997
 2-4 p. 353-355
3 p.
 artikel
157 New developments in the growth of epitaxial cubic boron nitride and diamond films on silicon Clarke, R.
 1992
 2-4 p. 93-97
5 p.
 artikel
158 New non-metallic catalysts for the synthesis of high pressure, high temperature diamond Akaishi, Minoru
 1993
 2-4 p. 183-189
7 p.
 artikel
159 Nickel-chemical vapour-deposited diamond interface studied by electron energy loss spectroscopy Eimori, N.
 1993
 2-4 p. 537-541
5 p.
 artikel
160 Nickel in diamond: an annealing study Lawson, S.C.
 1993
 2-4 p. 130-135
6 p.
 artikel
161 Nitrogen doping of diamond by ion implantation Kalish, R.
 1997
 2-4 p. 516-520
5 p.
 artikel
162 NMR characterisation of Si-based ultrafine laser formed powders Tougne, P.
 1992
 2-4 p. 360-363
4 p.
 artikel
163 Nucleation and growth of diamond on cemented carbides by hot-filament chemical vapor deposition Mehlmann, A.K.
 1993
 2-4 p. 317-322
6 p.
 artikel
164 Nucleation and growth of diamond particles from the vapor phase Kostadinov, Ljubomir
 1992
 2-4 p. 157-160
4 p.
 artikel
165 Nucleation and growth of diamond using a computer-controlled oxy-acetylene torch von Windheim, J.A.
 1993
 2-4 p. 438-442
5 p.
 artikel
166 Nucleation mechanisms of diamond in plasma chemical vapor deposition Yugo, S.
 1993
 2-4 p. 328-332
5 p.
 artikel
167 Nucleation of diamond on vapour deposited graphite Johansson, E.
 1993
 2-4 p. 383-388
6 p.
 artikel
168 On the development of CVD diamond film morphology due to the twinning on {111} surfaces Knuyt, G.
 1997
 2-4 p. 435-439
5 p.
 artikel
169 On the growth process of hydrogenated amorphous carbon films on silicon López, F.
 1993
 2-4 p. 229-232
4 p.
 artikel
170 On the mechanical integrity ratio of diamond coatings Brookes, C.A.
 1997
 2-4 p. 348-352
5 p.
 artikel
171 Optimization of MW-PACVD diamond deposition parameters for high nucleation density and growth rate on Si3N4 substrate Buchkremer-Hermanns, H.
 1997
 2-4 p. 411-416
6 p.
 artikel
172 Photoconductive properties of thin film diamond McKeag, Robert D.
 1997
 2-4 p. 374-380
7 p.
 artikel
173 Photoelectrical characteristics of diamond UV detectors: Dependence on device design and film quality Salvatori, S.
 1997
 2-4 p. 361-366
6 p.
 artikel
174 Photoelectron diffraction analysis of diamond and metal-diamond interfaces Kuettel, O.M.
 1993
 2-4 p. 548-551
4 p.
 artikel
175 Photoluminescence and cathodoluminescence studies of semiconducting diamond Freitas Jr., J.A.
 1993
 2-4 p. 87-91
5 p.
 artikel
176 Piezoresistive property of CVD diamond films Deguchi, Masahiro
 1997
 2-4 p. 367-373
7 p.
 artikel
177 Plasma-assisted CVD of diamond films by hollow cathode arc discharge Stiegler, J.
 1993
 2-4 p. 413-416
4 p.
 artikel
178 Plasma diagnosis in d.c.-biased hot-filament-assisted chemical vapour deposition by double-probe method Xuan, Zhenwu
 1993
 2-4 p. 476-480
5 p.
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179 Polycrystalline diamond field-effect transistors Tessmer, A.J.
 1992
 2-4 p. 89-92
4 p.
 artikel
180 Preface to diamond 1992, proceedings of the 3rd international conference on the new diamond science and technology (ICNDST-3) jointly with the 3rd European conference on diamond, diamond-like and related coatings (diamond films '92), Heidelberg, Germany, August 31–September 4, 1992 Bachmann, Peter K.
 1993
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1 p.
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181 Preface to the proceedings of the 2nd European conference on diamond, diamond-like and related coatings, Nice, France, September 2–6, 1991 Bachmann, Peter K.
 1992
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1 p.
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182 Preface to the Proceedings of the 7th European Conference on Diamond, Diamond-Like and Related Materials (Diamond Films '96), Tours, France, September 8–13, 1996 Angus, John C.
 1997
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 artikel
183 Preferential incorporation of defects in monocrystalline diamond films Yacobi, B.G.
 1993
 2-4 p. 92-99
8 p.
 artikel
184 Preparation of smooth and nanocrystalline diamond films Erz, R.
 1993
 2-4 p. 449-453
5 p.
 artikel
185 Production and characterization of d.c. and h.f. plasma jet diamond films Verven, G.
 1993
 2-4 p. 468-475
8 p.
 artikel
186 Radiation hardness of polycrystalline diamond Gonon, P.
 1997
 2-4 p. 314-319
6 p.
 artikel
187 Radio-frequency hot-filament CVD of diamond Mitura, Stanislaw
 1992
 2-4 p. 239-242
4 p.
 artikel
188 Rapid synthesis of diamond by counter-flow liquid injection into an atmospheric pressure plasma jet Pfender, E.
 1992
 2-4 p. 127-133
7 p.
 artikel
189 Recent results on the deposition of diamond thin films by arcjet plasmas and diagnostic measurements of the plasma-surface region Stalder, Kenneth R.
 1993
 2-4 p. 443-448
6 p.
 artikel
190 Research and development in the field of diamond films in Russia Spitsyn, B.V.
 1993
 2-4 p. 65-69
5 p.
 artikel
191 RF-deposited a-C:H films from hydrogen-rich methane mixtures: relationships among plasma characteristics, deposition rates, and material properties Barbarossa, V.
 1992
 2-4 p. 328-331
4 p.
 artikel
192 R.f. plasma-assisted chemical vapour deposition of diamond-like carbon films on complex geometries Dekempeneer, E.H.A.
 1993
 2-4 p. 272-277
6 p.
 artikel
193 Selected area diamond deposition by control of the nucleation sites Higuchi, K.
 1992
 2-4 p. 220-229
10 p.
 artikel
194 Self-propagating high-temperature synthesis: a new method for the production of diamond-containing materials Padyukov, Konstantin L.
 1993
 2-4 p. 207-210
4 p.
 artikel
195 Small scale electronic transport in diamond microcrystals Jaeger, M.D.
 1997
 2-4 p. 325-328
4 p.
 artikel
196 Some aspects of diamond synthesis Pavel, E.
 1993
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5 p.
 artikel
197 Some physical properties of diamond films grown by d.c.-glow discharge-enhanced hot-filament assisted chemical vapour deposition Fabisiak, K.
 1992
 2-4 p. 83-88
6 p.
 artikel
198 Spatially resolved measurements of absolute CH3 concentration in a hot-filament reactor Wahl, E.H.
 1997
 2-4 p. 476-480
5 p.
 artikel
199 Sponsors of diamond 1992 1993
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1 p.
 artikel
200 Stress relief behaviour of diamond-like carbon films on glasses Lee, Kwang-Ryeol
 1993
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7 p.
 artikel
201 Structure origins of diffraction pattern features of diamond-like films Pilankiewicz, E.A.
 1993
 2-4 p. 573-574
2 p.
 artikel
202 Studies of the optical emission from a hydrogen-hydrocarbon r.f. plasma jet stream during diamond film deposition Baránková, H.
 1993
 2-4 p. 347-352
6 p.
 artikel
203 Subject index 1992
 2-4 p. xxi-xxvi
nvt p.
 artikel
204 Subject index 1997
 2-4 p. xx-xxv
nvt p.
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205 Subject index 1993
 2-4 p. xix-xxvi
nvt p.
 artikel
206 Submicron characterization of B-C:H thin films produced by RF plasma CVD Garci´a, A.
 1992
 2-4 p. 350-354
5 p.
 artikel
207 Substrate temperature influence of c-BN thin film formation by IBED Tanabe, N.
 1992
 2-4 p. 151-156
6 p.
 artikel
208 Supersonic DC-arcjet synthesis of diamond Loh, Michael H.
 1993
 2-4 p. 454-461
8 p.
 artikel
209 Surface characterization of smooth heteroepitaxial diamond layers on β-SiC (001) Mizuochi, Y.
 1997
 2-4 p. 277-281
5 p.
 artikel
210 Surface-sensitive characterization of diamond by ionization electron energy loss spectroscopy Tschersich, K.G.
 1993
 2-4 p. 542-547
6 p.
 artikel
211 Synchrotron spike topography of natural Type IA diamond Moore, Moreton
 1993
 2-4 p. 115-120
6 p.
 artikel
212 Systematic investigation of plasma emission spectra during microwave diamond deposition from CH4CO2 and C2H2CO2 gas mixtures Balestrino, G.
 1993
 2-4 p. 389-392
4 p.
 artikel
213 TEM observations of diamond films prepared by microwave plasma CVD Eto, H.
 1992
 2-4 p. 373-379
7 p.
 artikel
214 Temperature measurement of atomic hydrogen produced by hot-filament dissociation in a CH4H2 mixture Vetterhöffer, J.
 1993
 2-4 p. 481-485
5 p.
 artikel
215 [100]-Textured diamond films for tribological applications Avigal, Y.
 1997
 2-4 p. 381-385
5 p.
 artikel
216 The characterization of single structure diamond heater and temperature sensor Yang, G.S.
 1997
 2-4 p. 394-397
4 p.
 artikel
217 The chemical nature of the carbon precursor in bias-enhanced nucleation of CVD diamond Gouzman, I.
 1997
 2-4 p. 526-531
6 p.
 artikel
218 The deposition and characterization of β-SiC and diamond/β-SiC composite films Jiang, X.
 1993
 2-4 p. 523-527
5 p.
 artikel
219 The diamond Irvin curve Werner, M.
 1997
 2-4 p. 308-313
6 p.
 artikel
220 The dilution effect of noble gases on the structure and composition of chemically vapour-deposited diamond films Shih, H.C.
 1993
 2-4 p. 531-536
6 p.
 artikel
221 The effect of deposition conditions on carbon films prepared by laser ablation Gorbunov, A.A.
 1992
 2-4 p. 312-315
4 p.
 artikel
222 The effect of silicon surface preparation on the nucleation of diamond by chemical vapor deposition Avigal, Y.
 1992
 2-4 p. 216-219
4 p.
 artikel
223 The effect of substrate bias voltage on the nucleation of diamond crystals in a microwave plasma assisted chemical vapor deposition process Jiang, X.
 1993
 2-4 p. 407-412
6 p.
 artikel
224 The effect of surface preparation on the nucleation of diamond on silicon Bienk, Ewa J.
 1993
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6 p.
 artikel
225 The geology of diamond: Time and depth profiles from inclusions Harris, J.W.
 1993
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5 p.
 artikel
226 The growth of diamond using halogenated methane Chu, C.H.
 1993
 2-4 p. 311-316
6 p.
 artikel
227 The influence of boron doping on the structure and characteristics of diamond thin films Liao, X.Z.
 1997
 2-4 p. 521-525
5 p.
 artikel
228 The influence of methane concentration, substrate temperature, and pressure on the morphology of diamond films grown by dc plasma jet CVD Boudina, A.
 1992
 2-4 p. 248-254
7 p.
 artikel
229 The influence of substrate temperature during ion beam deposition on the diamond-like or graphitic nature of carbon films Lifshitz, Y.
 1993
 2-4 p. 285-290
6 p.
 artikel
230 The Raman spectroscopy of diamond films deposited on metal and insulator substrates with varying thermal expansion coefficient Fabisiak, K.
 1992
 2-4 p. 77-82
6 p.
 artikel
231 Thermal resistance and electrical insulation of thin low-temperature-deposited diamond films Verhoeven, H.
 1997
 2-4 p. 298-302
5 p.
 artikel
232 Thermodynamics and kinetics for nucleation of diamond in the chemical vapor deposition process Hwang, Nong M.
 1992
 2-4 p. 191-194
4 p.
 artikel
233 The roles of H and O atoms in diamond growth Dementjev, A.P.
 1997
 2-4 p. 486-489
4 p.
 artikel
234 Topographic methods for studying defects in diamonds Lang, A.R.
 1993
 2-4 p. 106-114
9 p.
 artikel
235 Transmission electron microscope study of heteroepitaxial diamond on Pt (111) Tarutani, Masayoshi
 1997
 2-4 p. 272-276
5 p.
 artikel
236 Type IIb diamond thin films deposited onto near-colorless natural gem diamonds Fritsch, Emmanuel
 1993
 2-4 p. 70-74
5 p.
 artikel
237 UV laser processing of diamond films: effects of irradiation conditions on the properties of laser-treated diamond film surfaces Pimenov, S.M.
 1993
 2-4 p. 291-297
7 p.
 artikel
238 UV photon-assisted crystallization of carbon Sokołowska, A.
 1993
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4 p.
 artikel
239 Vacancy complexes in diamond Davies, Gordon
 1993
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7 p.
 artikel
240 Vapor growth of diamond with silane Miyata, Koichi
 1992
 2-4 p. 392-396
5 p.
 artikel
241 X.P.S. analysis of the Si substrate surface pretreatment for diamond film deposition Ascarelli, P.
 1992
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5 p.
 artikel
242 X-ray diffraction imaging of man-made and natural diamond Black, David R.
 1993
 2-4 p. 121-125
5 p.
 artikel
243 X-ray emission spectroscopy studies of structural properties of diamond-like carbon films Strel'nitskij, V.E.
 1992
 2-4 p. 341-344
4 p.
 artikel
244 X-Ray study of the interface layer between low temperature deposited diamond film and the silicon substrate Lu, F.X.
 1993
 2-4 p. 575-579
5 p.
 artikel
                             244 gevonden resultaten
 
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