| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Determination of the thermal properties of semiconductors using the photothermal method in the many thin layers case
|
Saadallah, F.
|
|
1996
|
6 |
1-2 |
p. 35-39
5 p.
|
artikel
|
| 2 |
Diffusion and interaction of group I impurities with vacancies in CdS thin films
|
Bidadi, H.
|
|
1996
|
6 |
1-2 |
p. 27-33
7 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
1996
|
6 |
1-2 |
p. ii-
1 p.
|
artikel
|
| 4 |
Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes
|
Menkara, H.M.
|
|
1996
|
6 |
1-2 |
p. 103-109
7 p.
|
artikel
|
| 5 |
Electrochemical growth of GaSb and InSb for applications in infra-red detectors and optical communication systems
|
McChesney, J.-J.
|
|
1996
|
6 |
1-2 |
p. 63-67
5 p.
|
artikel
|
| 6 |
Electrochemical photovoltaic systems: some advances in ferrocene-protected n-doped silicon cells
|
Rosseinsky, D.R.
|
|
1996
|
6 |
1-2 |
p. 83-88
6 p.
|
artikel
|
| 7 |
Growth of CdS and CdTe by electrochemical technique for utilisation in thin film solar cells
|
McGregor, S.M.
|
|
1996
|
6 |
1-2 |
p. 75-81
7 p.
|
artikel
|
| 8 |
Growth of GaSb on GaAs/AlAs mirrors for 1.68 μm detectors
|
Grey, R.
|
|
1996
|
6 |
1-2 |
p. 69-74
6 p.
|
artikel
|
| 9 |
Highly luminescent hydrogenated amorphous carbon (a-C:H) thin films
|
Rusli,
|
|
1996
|
6 |
1-2 |
p. 93-98
6 p.
|
artikel
|
| 10 |
InAs-based laser double heterostructures with p-n junction in the active region
|
Bresler, M.S.
|
|
1996
|
6 |
1-2 |
p. 111-116
6 p.
|
artikel
|
| 11 |
Influence of electric field on the transmission spectrum of a GaSe crystal
|
Tajalli, H.
|
|
1996
|
6 |
1-2 |
p. 17-20
4 p.
|
artikel
|
| 12 |
Light induced defects in amorphous silicon-carbon alloys a-SiC:H
|
Rejeb, S.H.
|
|
1996
|
6 |
1-2 |
p. 13-16
4 p.
|
artikel
|
| 13 |
Materials for high performance infrared detectors: status and trends
|
Baars, Jan
|
|
1996
|
6 |
1-2 |
p. 41-54
14 p.
|
artikel
|
| 14 |
Microstructural evaluation of optical materials and devices using a combination of focused ion beam sputtering and transmission electron microscopy
|
Hull, Robert
|
|
1996
|
6 |
1-2 |
p. 1-11
11 p.
|
artikel
|
| 15 |
Nickel phthalocyanine photovoltaic devices
|
McHale, G.
|
|
1996
|
6 |
1-2 |
p. 89-92
4 p.
|
artikel
|
| 16 |
Nonlinear light absorption in GaSe crystals at the fundamental absorption edge
|
Kalafi, M.
|
|
1996
|
6 |
1-2 |
p. 117-120
4 p.
|
artikel
|
| 17 |
Preface
|
Ray, A.K.
|
|
1996
|
6 |
1-2 |
p. ix-
1 p.
|
artikel
|
| 18 |
The photoluminescence of erbium-doped silicon monoxide
|
Roberts, S.W.
|
|
1996
|
6 |
1-2 |
p. 99-102
4 p.
|
artikel
|
| 19 |
Uncooled 4.2 μm light emitting diodes based on InAs0.91Sb0.09/GaSb grown by LPE
|
Mao, Y.
|
|
1996
|
6 |
1-2 |
p. 55-61
7 p.
|
artikel
|
| 20 |
Zinc diffusion in tellurium doped gallium antimonide
|
Conibeer, G.J.
|
|
1996
|
6 |
1-2 |
p. 21-25
5 p.
|
artikel
|
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