| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A control procedure for the shape of a Nd:YAG and Nd:YVO4 cylindrical bar grown by edge-defined film-fed growth method under oscillated furnace pressure
|
Balint, A.M.
|
|
2006
|
|
6-7 |
p. 671-675
5 p.
|
article
|
| 2 |
Annealing of amorphous and nanocrystalline AlN and GaN films and photoluminescence of Tb3+ centers
|
Mendel, H.
|
|
2006
|
|
6-7 |
p. 794-796
3 p.
|
article
|
| 3 |
Anomalous Tb3+ luminous spectrum in the TiO2 nanocrystals
|
Moon, Byung Kee
|
|
2006
|
|
6-7 |
p. 676-680
5 p.
|
article
|
| 4 |
Cathode-luminescence property of Er3+/Yb3+-doped amorphous GeO2
|
Endo, Iku
|
|
2006
|
|
6-7 |
p. 879-882
4 p.
|
article
|
| 5 |
Ce–Zr–Al–O system with host–guest interactions: Peculiarities of the optical properties
|
Frolova, Elena V.
|
|
2006
|
|
6-7 |
p. 660-664
5 p.
|
article
|
| 6 |
Comparative optical study of Eu3+ ions doping in InGaN/GaN quantum dots and GaN layer grown by molecular beam epitaxy
|
Andreev, Thomas
|
|
2006
|
|
6-7 |
p. 775-779
5 p.
|
article
|
| 7 |
Contents list
|
|
|
2006
|
|
6-7 |
p. vii-ix
nvt p.
|
article
|
| 8 |
Degradation mechanism of phosphors by vacuum ultraviolet excitation
|
Moine, B.
|
|
2006
|
|
6-7 |
p. 587-591
5 p.
|
article
|
| 9 |
Doping effects on 1.54μm photoluminescence from Er-containing ZnO
|
Zhou, Zhen
|
|
2006
|
|
6-7 |
p. 727-730
4 p.
|
article
|
| 10 |
Effect of annealing temperature on luminescence in Eu implanted GaN
|
Bodiou, L.
|
|
2006
|
|
6-7 |
p. 780-784
5 p.
|
article
|
| 11 |
Effect of B2O3 on the fluorescence of Er-doped Ge–B–P–SiO2 glasses for waveguide amplifier
|
Cho, Kang ill
|
|
2006
|
|
6-7 |
p. 888-892
5 p.
|
article
|
| 12 |
Erbium-doped silicon nanocrystals grown by r.f. sputtering method: Competition between oxygen and silicon to get erbium
|
Cerqueira, M.F.
|
|
2006
|
|
6-7 |
p. 836-841
6 p.
|
article
|
| 13 |
Eu-doped (Lu/Sc)2O3 thin films grown by thermal evaporation
|
Rabisch, L.
|
|
2006
|
|
6-7 |
p. 665-670
6 p.
|
article
|
| 14 |
Extended X-ray absorption fine structure studies of GaN epilayers doped with Er
|
Katchkanov, V.
|
|
2006
|
|
6-7 |
p. 785-789
5 p.
|
article
|
| 15 |
Fabrication and properties of Yb-doped silica glass films for laser waveguide application
|
Jacqueline, A.-S.
|
|
2006
|
|
6-7 |
p. 868-872
5 p.
|
article
|
| 16 |
Geometry relaxation in the excited states and its effects on the electronic properties of the Er(8-hydroxyquinolate)3 complex
|
Ottonelli, M.
|
|
2006
|
|
6-7 |
p. 714-717
4 p.
|
article
|
| 17 |
Growth condition dependence of photoluminescence of Eu-doped GaN films prepared by radio frequency magnetron sputtering
|
Yudate, Shinji
|
|
2006
|
|
6-7 |
p. 742-745
4 p.
|
article
|
| 18 |
Heterojunction OLEDs fabricated by Eu ternary complexes with conducting secondary ligands
|
Lam, M.K.
|
|
2006
|
|
6-7 |
p. 709-713
5 p.
|
article
|
| 19 |
Highly enhanced luminescence of nanocrystalline TiO2:Eu3+ phosphors
|
Yi, Soung-soo
|
|
2006
|
|
6-7 |
p. 610-614
5 p.
|
article
|
| 20 |
High temperature annealing of rare earth implanted GaN films: Structural and optical properties
|
Lorenz, K.
|
|
2006
|
|
6-7 |
p. 750-758
9 p.
|
article
|
| 21 |
Hyperfine structure of Tm3+ in YAG for quantum storage applications
|
Goldner, Ph.
|
|
2006
|
|
6-7 |
p. 649-654
6 p.
|
article
|
| 22 |
IFC (Editorial Board)
|
|
|
2006
|
|
6-7 |
p. CO2-
1 p.
|
article
|
| 23 |
Impact of AlGaN on luminescence capability of rare-earth ions in AlGaN
|
Wakahara, Akihiro
|
|
2006
|
|
6-7 |
p. 731-737
7 p.
|
article
|
| 24 |
Influence of Ce3+ doping on the structure and luminescence of Er3+-doped transparent glass-ceramics
|
Dantelle, G.
|
|
2006
|
|
6-7 |
p. 638-642
5 p.
|
article
|
| 25 |
Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation
|
Hernández, S.
|
|
2006
|
|
6-7 |
p. 771-774
4 p.
|
article
|
| 26 |
Li-doping effect on enhancement of photoluminescence in Gd2O3:Eu3+ films
|
Jeong, Jung Hyun
|
|
2006
|
|
6-7 |
p. 693-697
5 p.
|
article
|
| 27 |
Luminescence of Nd-enriched silicon nanoparticle glasses
|
MacDonald, A.N.
|
|
2006
|
|
6-7 |
p. 820-824
5 p.
|
article
|
| 28 |
Luminescent characterization of lead tungstate crystals doped with europium, praseodymium, and ytterbium ions
|
Antonenko, O.
|
|
2006
|
|
6-7 |
p. 643-648
6 p.
|
article
|
| 29 |
Luminescent properties of Ce and Eu doped Sr4Al14O25 phosphors
|
Han, Sang Hyuk
|
|
2006
|
|
6-7 |
p. 626-630
5 p.
|
article
|
| 30 |
Luminescent properties of Eu2+-activated (Ba,Sr)3MgSi2O8 phosphor under VUV irradiation
|
Jung, Ha-Kyun
|
|
2006
|
|
6-7 |
p. 602-605
4 p.
|
article
|
| 31 |
Microscopic theory for excitation of erbium ions via silicon nanocrystals in silicon dioxide
|
Yassievich, I.N.
|
|
2006
|
|
6-7 |
p. 810-814
5 p.
|
article
|
| 32 |
Microscopic theory of erbium ion de-excitation processes in silicon
|
Prokofiev, A.A.
|
|
2006
|
|
6-7 |
p. 825-830
6 p.
|
article
|
| 33 |
Model based optimization of some growth process parameters of a Nd:YVO4 cylindrical bar grown by edge-defined film-fed growth (EFG) method in the presence of the pressure
|
Braescu, L.
|
|
2006
|
|
6-7 |
p. 631-637
7 p.
|
article
|
| 34 |
1.54μm photoluminescence from Er-doped sol–gel derived In2O3 films embedded in porous anodic alumina
|
Podhorodecki, A.
|
|
2006
|
|
6-7 |
p. 685-687
3 p.
|
article
|
| 35 |
Nd3+ doped Sc2O3 waveguiding film produced by pulsed laser deposition
|
Kuzminykh, Y.
|
|
2006
|
|
6-7 |
p. 883-887
5 p.
|
article
|
| 36 |
Observation of the population inversion of erbium ion states in Si/Si1−x Ge x:Er/Si structures under optical excitation
|
Stepikhova, M.V.
|
|
2006
|
|
6-7 |
p. 893-896
4 p.
|
article
|
| 37 |
On the role of Yb as an impurity in the excitation of Er3+ emission in silicon-rich silicon oxide
|
Kozanecki, A.
|
|
2006
|
|
6-7 |
p. 850-854
5 p.
|
article
|
| 38 |
Optical and electrical activity of defects in rare earth implanted Si
|
Evans-Freeman, J.H.
|
|
2006
|
|
6-7 |
p. 802-809
8 p.
|
article
|
| 39 |
Optical and structural investigation on rare-earth-doped aluminophosphate glasses
|
Elisa, M.
|
|
2006
|
|
6-7 |
p. 621-625
5 p.
|
article
|
| 40 |
Optical properties of a single Er center in GaN
|
Glukhanyuk, V.
|
|
2006
|
|
6-7 |
p. 746-749
4 p.
|
article
|
| 41 |
Optical properties of erbium-doped xerogels embedded in porous anodic alumina
|
Gaponenko, N.V.
|
|
2006
|
|
6-7 |
p. 688-692
5 p.
|
article
|
| 42 |
Optical properties of high-temperature annealed Eu-implanted GaN
|
Wang, K.
|
|
2006
|
|
6-7 |
p. 797-801
5 p.
|
article
|
| 43 |
Optimization of the optical properties of Er-doped Si-rich SiO2/SiO2 multilayers obtained by reactive magnetron sputtering
|
Gourbilleau, F.
|
|
2006
|
|
6-7 |
p. 846-849
4 p.
|
article
|
| 44 |
Phosphor powders elaborated by spray-pyrolysis: Characterizations and possible applications
|
Joffin, N.
|
|
2006
|
|
6-7 |
p. 597-601
5 p.
|
article
|
| 45 |
Photoluminescence from Er-doped silicon oxide microcavities
|
Hryciw, A.
|
|
2006
|
|
6-7 |
p. 873-878
6 p.
|
article
|
| 46 |
Photoluminescence of Er-doped silicon nanoparticles from sputtered SiO x thin films
|
Biggemann, Daniel
|
|
2006
|
|
6-7 |
p. 842-845
4 p.
|
article
|
| 47 |
Photon management with lanthanides
|
Meijerink, Andries
|
|
2006
|
|
6-7 |
p. 575-581
7 p.
|
article
|
| 48 |
Rare-earth-doped GVO films grown by pulsed laser deposition
|
Bär, S.
|
|
2006
|
|
6-7 |
p. 681-684
4 p.
|
article
|
| 49 |
Rare earth doped photonic materials
|
|
|
2006
|
|
6-7 |
p. v-
1 p.
|
article
|
| 50 |
Sensitisation of erbium luminescence in erbium-implanted alumina
|
Kenyon, A.J.
|
|
2006
|
|
6-7 |
p. 655-659
5 p.
|
article
|
| 51 |
Short-range order around Er3+ in silica waveguides containing aluminium, titanium and hafnium
|
Afify, N.D.
|
|
2006
|
|
6-7 |
p. 864-867
4 p.
|
article
|
| 52 |
Sol–gel derived Y(PO3)3 polyphosphate: Synthesis and characterization
|
Briche, S.
|
|
2006
|
|
6-7 |
p. 615-620
6 p.
|
article
|
| 53 |
Structural and optical characterizations of sol–gel based fluorides materials: LiGdF4:Eu3+ and LiYF4:Er3+
|
Lepoutre, Sophie
|
|
2006
|
|
6-7 |
p. 592-596
5 p.
|
article
|
| 54 |
Structure and electrical activity of rare-earth dopants in semiconductors
|
Jones, R.
|
|
2006
|
|
6-7 |
p. 718-722
5 p.
|
article
|
| 55 |
Study of the Si-nanocluster to Er3+ energy transfer dynamics using a double-pulse experiment
|
Falconieri, M.
|
|
2006
|
|
6-7 |
p. 815-819
5 p.
|
article
|
| 56 |
Surface morphology and photoluminescence characteristics of Eu-doped YVO4 thin films
|
Yi, Soung-soo
|
|
2006
|
|
6-7 |
p. 703-708
6 p.
|
article
|
| 57 |
Symposium Organisers
|
|
|
2006
|
|
6-7 |
p. vi-
1 p.
|
article
|
| 58 |
Synthesis and optical properties of Eu3+ and Tb3+ doped GaN nanocrystallite powders
|
Nyk, M.
|
|
2006
|
|
6-7 |
p. 767-770
4 p.
|
article
|
| 59 |
TEM investigation of Tm implanted GaN, the influence of high temperature annealing
|
Wójtowicz, T.
|
|
2006
|
|
6-7 |
p. 738-741
4 p.
|
article
|
| 60 |
TEM observation of Eu-doped GaN and fabrication of n-GaN/Eu:GaN/p-GaN structure
|
Sawahata, J.
|
|
2006
|
|
6-7 |
p. 759-762
4 p.
|
article
|
| 61 |
Temperature dependent PAC studies with the rare earth 172Lu in ZnO
|
Nédélec, R.
|
|
2006
|
|
6-7 |
p. 723-726
4 p.
|
article
|
| 62 |
The effect of annealing conditions on the crystallization of Er–Si–O formed by solid phase reaction
|
Masaki, K.
|
|
2006
|
|
6-7 |
p. 831-835
5 p.
|
article
|
| 63 |
The effects of substrates and deposition parameters on the growing and luminescent properties of Y3Al5O12:Ce thin films
|
Kim, Joo Won
|
|
2006
|
|
6-7 |
p. 698-702
5 p.
|
article
|
| 64 |
The microstructure of low dose implanted GaN using Cr, Er, Eu and Yb ions
|
Gloux, Florence
|
|
2006
|
|
6-7 |
p. 763-766
4 p.
|
article
|
| 65 |
Thermal activation, cathodo- and photoluminescence measurements of rare earth doped (Tm,Tb,Dy,Eu,Sm,Yb) amorphous/nanocrystalline AlN thin films prepared by reactive rf-sputtering
|
Weingärtner, R.
|
|
2006
|
|
6-7 |
p. 790-793
4 p.
|
article
|
| 66 |
The synthesis of monodisperse trioctylphosphine oxide-capped EuF3 nanoparticles
|
Zhuravleva, N.G.
|
|
2006
|
|
6-7 |
p. 606-609
4 p.
|
article
|
| 67 |
Towards epitaxial growth of ErSiO nanostructured crystalline films on Si substrates
|
Isshiki, H.
|
|
2006
|
|
6-7 |
p. 855-858
4 p.
|
article
|
| 68 |
Unusual full-colour phosphors: Na3LnSi3O9
|
Ananias, D.
|
|
2006
|
|
6-7 |
p. 582-586
5 p.
|
article
|
| 69 |
Visible lasing from GaN:Eu optical cavities on sapphire substrates
|
Park, J.H.
|
|
2006
|
|
6-7 |
p. 859-863
5 p.
|
article
|
Journal description