nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
CEF effects of Ho1− x Dy x Ni2B2C
|
Lee, W.C. |
|
2007 |
399 |
2 |
p. 116-120 5 p. |
artikel |
2 |
Examining crystallographic orientation dependence of hardness of silica stishovite
|
Luo, Sheng-Nian |
|
2007 |
399 |
2 |
p. 138-142 5 p. |
artikel |
3 |
IFC (Ed. Board)
|
|
|
2007 |
399 |
2 |
p. IFC- 1 p. |
artikel |
4 |
Improvement of the optical properties of ZnO nanorods by Fe doping
|
Baek, Seonghoon |
|
2007 |
399 |
2 |
p. 101-104 4 p. |
artikel |
5 |
Pseudopotential calculations of Cd1− x Zn x Te: Energy gaps and dielectric constants
|
Bouarissa, Nadir |
|
2007 |
399 |
2 |
p. 126-131 6 p. |
artikel |
6 |
Spin dynamics characterization in magnetic dots
|
Mozaffari, Mohammad Reza |
|
2007 |
399 |
2 |
p. 81-93 13 p. |
artikel |
7 |
Substitution of Sm at Ca site in Bi 1.6 Pb 0.4 Sr 2 Ca 2 - x Sm x Cu 3 O y superconductors
|
Ozturk, O. |
|
2007 |
399 |
2 |
p. 94-100 7 p. |
artikel |
8 |
Synthesis and magnetic properties of lanthanum-substituted lithium–nickel ferrites via a soft chemistry route
|
Jiang, Jing |
|
2007 |
399 |
2 |
p. 105-108 4 p. |
artikel |
9 |
The barrier height distribution in identically prepared Al/p-Si Schottky diodes with the native interfacial insulator layer (SiO2)
|
Altındal, Ş. |
|
2007 |
399 |
2 |
p. 146-154 9 p. |
artikel |
10 |
The effect of strain relaxation on electron transport in undoped Al0.25Ga0.75N/GaN heterostructures
|
Lişesivdin, S.B. |
|
2007 |
399 |
2 |
p. 132-137 6 p. |
artikel |
11 |
Theoretical studies of EPR site center for Mn2+ in potassium thiourea bromide single crystal
|
Ravi, S. |
|
2007 |
399 |
2 |
p. 143-145 3 p. |
artikel |
12 |
The ternary alloy with a structure of Prussian blue analogs in a transverse field
|
Dely, J. |
|
2007 |
399 |
2 |
p. 155-161 7 p. |
artikel |
13 |
Transmission coefficient associated with counterposition phenomenon in uniaxial crystal
|
He, Ming |
|
2007 |
399 |
2 |
p. 121-125 5 p. |
artikel |
14 |
Transport mechanism and trap distribution in ITO/azo-calix[4]arene derivative/Al diode structure
|
Rouis, A. |
|
2007 |
399 |
2 |
p. 109-115 7 p. |
artikel |