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                             99 results found
no title author magazine year volume issue page(s) type
1 Ab initio calculations of Nb doped SrTiO3 Eglitis, R.I.
2010
340-342 15 p. 3164-3166
3 p.
article
2 A comparative review of physical properties in the hydrated cobaltate superconductor Ohkawa, M.
2010
340-342 15 p. 3057-3062
6 p.
article
3 A contribution to the identification of the E5 defect level as tri-vacancy (V3) Junkes, Alexandra
2012
340-342 15 p. 3013-3015
3 p.
article
4 Atomic ordering and magnetic properties of polycrystalline L10-FePd dot arrays Kang, J.-G.
2010
340-342 15 p. 3149-3153
5 p.
article
5 Calorimetric studies of Se75Te15Cd10 and Se75Te10Cd10In5 multicomponent chalcogenide glasses Kumar, Sunil
2010
340-342 15 p. 3135-3140
6 p.
article
6 Characterisation of defects in p-GaN by admittance spectroscopy Elsherif, O.S.
2012
340-342 15 p. 2960-2963
4 p.
article
7 Characterization and room temperature sensing of ammonia and ethanol by thermally oxidized indium films Kaur Bal, Amandeep
2010
340-342 15 p. 3124-3128
5 p.
article
8 Characterization of AgInS2 thin films prepared by vacuum evaporation Akaki, Yoji
2012
340-342 15 p. 2858-2860
3 p.
article
9 Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy Asghar, M.
2012
340-342 15 p. 3041-3043
3 p.
article
10 Charge states of a hydrogen defect (3326cm−1 line) in ZnO Herklotz, F.
2012
340-342 15 p. 2883-2885
3 p.
article
11 Chemical etching to dissolve dislocation cores in multicrystalline silicon Gregori, N.J.
2012
340-342 15 p. 2970-2973
4 p.
article
12 Comparison between various finite-size supercell correction schemes for charged defect calculations Komsa, Hannu-Pekka
2012
340-342 15 p. 3063-3067
5 p.
article
13 Computational materials design of filled tetrahedral compound magnetic semiconductors Sato, K.
2012
340-342 15 p. 2950-2953
4 p.
article
14 Contents 2012
340-342 15 p. vii-ix
nvt p.
article
15 dc-Hydrogen plasma induced defects in bulk n-Ge Nyamhere, C.
2012
340-342 15 p. 2935-2938
4 p.
article
16 Defect annealing in Sb/Sn implanted diamond investigated with 119Sn Mössbauer spectroscopy Bharuth-Ram, K.
2012
340-342 15 p. 2923-2925
3 p.
article
17 Defect detection in semiconductor layers with built-in electric field with the use of cathodoluminescence Pluska, Mariusz
2012
340-342 15 p. 2854-2857
4 p.
article
18 Defect-effects on the photoluminescence of ZrO2 bulk, film and nanocrystals Mochizuki, Shosuke
2012
340-342 15 p. 2911-2914
4 p.
article
19 Device quality ZnO grown using a Filtered Cathodic Vacuum Arc Elzwawi, Salim
2012
340-342 15 p. 2903-2906
4 p.
article
20 Dielectric characteristics of LiCo3/5Cu2/5VO4 ceramics Ram, Moti
2010
340-342 15 p. 3113-3116
4 p.
article
21 Editorial Board 2010
340-342 15 p. IFC-
1 p.
article
22 Editorial Board 2012
340-342 15 p. IFC-
1 p.
article
23 Effect of Co-doping content on hydrothermal derived ZnO array films He, Xinhua
2012
340-342 15 p. 2895-2899
5 p.
article
24 Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfaces Noh, Hyeon-Kyun
2012
340-342 15 p. 2907-2910
4 p.
article
25 Elastic properties of cubic perovskite BaRuO3 from first-principles calculations Han, De-Ming
2010
340-342 15 p. 3117-3119
3 p.
article
26 Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface Ogawa, Masatoshi
2012
340-342 15 p. 3034-3037
4 p.
article
27 Electronic structure and magnetism of the Heusler alloy Mn2NiAl: A theoretical study of the shape–memory behavior Luo, Hongzhi
2010
340-342 15 p. 3092-3095
4 p.
article
28 Enhanced optical properties of porous GaN by using UV-assisted electrochemical etching Al-heuseen, K.
2010
340-342 15 p. 3176-3179
4 p.
article
29 Evaluating effect of surface state density at the interfaces in degraded bulk heterojunction organic solar cell Arora, Swati
2012
340-342 15 p. 3044-3046
3 p.
article
30 Field emission resonances in photodetachment of negative ions on surface Han, Yan
2010
340-342 15 p. 3082-3087
6 p.
article
31 First-principles materials design of CuInSe2-based high-efficiency photovoltaic solar cells Tani, Yoshimasa
2012
340-342 15 p. 3056-3058
3 p.
article
32 First principles study of electronic and structural properties of the Ge/GeO2 interface Broqvist, Peter
2012
340-342 15 p. 2926-2931
6 p.
article
33 First principles study of O defects in CdSe T-Thienprasert, J.
2012
340-342 15 p. 2841-2845
5 p.
article
34 First-principles study of structural, elastic, electronic, and optical properties of γ-TeO2 Liu, Qi-Jun
2010
340-342 15 p. 3159-3163
5 p.
article
35 First-principles study of the magnetic properties of nitrogen-doped alkaline earth metal oxides Seike, Masayoshi
2012
340-342 15 p. 2875-2878
4 p.
article
36 First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2 Oh, Young Jun
2012
340-342 15 p. 2989-2992
4 p.
article
37 Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN Zainal, N.
2012
340-342 15 p. 2964-2966
3 p.
article
38 Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivity Woo, Sungho
2012
340-342 15 p. 3059-3062
4 p.
article
39 Hydrogen desorption energies of Aluminum hydride (Al n H3n ) clusters Gandhi, Krishna
2010
340-342 15 p. 3075-3081
7 p.
article
40 Hydrogen interaction with GaN metal–insulator–semiconductor diodes Irokawa, Y.
2012
340-342 15 p. 2957-2959
3 p.
article
41 Identification of a metastable state of the VZnH2 defect in ZnO Bastin, D.
2012
340-342 15 p. 2919-2922
4 p.
article
42 Impedance spectroscopy analysis of Ba5NdTi3Nb7O30 ferroelectric ceramic Ganguly, Prasun
2010
340-342 15 p. 3154-3158
5 p.
article
43 Interaction of dopant atoms with stacking faults in silicon Ohno, Yutaka
2012
340-342 15 p. 3006-3008
3 p.
article
44 Intrinsic defects in GaAs and InGaAs through hybrid functional calculations Komsa, Hannu-Pekka
2012
340-342 15 p. 2833-2837
5 p.
article
45 Investigation of electron energy states in InGaN/GaN multiple quantum wells Asghar, M.
2012
340-342 15 p. 2850-2853
4 p.
article
46 Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and Si Takakura, Kenichiro
2012
340-342 15 p. 2900-2902
3 p.
article
47 Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles Makarenko, L.F.
2012
340-342 15 p. 3016-3019
4 p.
article
48 Laplace deep level transient spectroscopy: Embodiment and evolution Peaker, A.R.
2012
340-342 15 p. 3026-3030
5 p.
article
49 Low-field magnetoresistance in La0.7Sr0.3MnO3/CuCrO2 composites Wang, Tao
2010
340-342 15 p. 3088-3091
4 p.
article
50 Luminescence optimization of MBO3:Eu3+ (M=Y, Gd, Al) red phosphor by spray pyrolysis using combinatorial chemistry Youl Jung, Kyeong
2010
340-342 15 p. 3195-3199
5 p.
article
51 Magnetic force microscopy study of heat-treated Fe81Ga19 with different cooling rates Zhang, Jingjing
2010
340-342 15 p. 3129-3134
6 p.
article
52 Magnetocaloric effect of half-doped manganite Nd0.5Ca0.25Sr0.25MnO3 Fan, Jiyu
2010
340-342 15 p. 3120-3123
4 p.
article
53 300mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitation Kissinger, G.
2012
340-342 15 p. 2993-2997
5 p.
article
54 Molecular dynamics study of mechanical properties of bismuth telluride nanofilm Tong, Yu
2010
340-342 15 p. 3190-3194
5 p.
article
55 Motion of positively charged muonium in ZnO Baker, B.B.
2012
340-342 15 p. 2864-2866
3 p.
article
56 Muonium dynamics in transparent conducting oxides Celebi, Y.G.
2012
340-342 15 p. 2879-2882
4 p.
article
57 Muonium transitions in Ge-rich SiGe alloys Mengyan, P.W.
2012
340-342 15 p. 2829-2832
4 p.
article
58 Nanoscale order in ZnS:(Cd, O) Díaz Albarrán, S.F.
2012
340-342 15 p. 2846-2849
4 p.
article
59 On the effects of NBTI degradation in p-MOSFET devices Hussin, H.
2012
340-342 15 p. 3031-3033
3 p.
article
60 On the impact of stress on intrinsic defect formation during single crystal silicon growth Vanhellemont, Jan
2012
340-342 15 p. 3009-3012
4 p.
article
61 Optical properties of nanocrystalline CdTe thin films Ikhmayies, Shadia J
2010
340-342 15 p. 3141-3144
4 p.
article
62 Organizing committees and sponsors 2012
340-342 15 p. v-vi
nvt p.
article
63 Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method Yonenaga, Ichiro
2012
340-342 15 p. 2932-2934
3 p.
article
64 Phase diagrams of polar surface reconstructions of zinc oxide Gluba, M.A.
2012
340-342 15 p. 2871-2874
4 p.
article
65 Potential fluctuations in Cu2ZnSnSe4 solar cells studied by temperature dependence of quantum efficiency curves Krustok, J.
2010
340-342 15 p. 3186-3189
4 p.
article
66 Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods Meduňa, M.
2012
340-342 15 p. 3002-3005
4 p.
article
67 Preface Evans-Freeman, Jan
2012
340-342 15 p. xi-
1 p.
article
68 Preparation and characterization of Na-doped ZnO thin films by sol–gel method Lü, Jianguo
2010
340-342 15 p. 3167-3171
5 p.
article
69 Pressure-induced structural phase transition and electronic properties of actinide nitrides: Ab initio calculations Singh, A.
2010
340-342 15 p. 3106-3112
7 p.
article
70 Proceedings of the 26th International Conference on Defects in Semiconductors (ICDS-26) Evans-Freeman, Jan
2012
340-342 15 p. iii-
1 p.
article
71 Raman investigation of ro-vibrational modes of interstitial H2 in Si Koch, S.G.
2012
340-342 15 p. 2978-2980
3 p.
article
72 Recombination activity of dislocations on (0001) introduced in wurtzite ZnO at elevated temperatures Ohno, Yutaka
2012
340-342 15 p. 2886-2888
3 p.
article
73 Reconfigurations and diffusion of trivacancy in silicon Markevich, V.P.
2012
340-342 15 p. 2974-2977
4 p.
article
74 Sonochemical synthesis, characterization and thermal and optical analysis of CuO nanoparticles Ranjbar-Karimi, Reza
2010
340-342 15 p. 3096-3100
5 p.
article
75 Stability of valence alternation pairs across the substoichiometric region at Ge/GeO2 interfaces Binder, Jan Felix
2012
340-342 15 p. 2939-2942
4 p.
article
76 Stabilization of organic thin film transistors by ion implantation Fraboni, B.
2012
340-342 15 p. 3047-3051
5 p.
article
77 Structural analysis of the phase separation in magnetic semiconductor (Zn, Cr)Te Kobayashi, Hiroaki
2012
340-342 15 p. 2947-2949
3 p.
article
78 Structural and local electrical properties of AlInN/AlN/GaN heterostructures Minj, A.
2012
340-342 15 p. 2838-2840
3 p.
article
79 Structural characterizations of sol–gel synthesized TiO2 and Ce/TiO2 nanostructures Niltharach, A.
2012
340-342 15 p. 2915-2918
4 p.
article
80 Structural, morphology and optical properties of chemically deposited Sb2S3 thin films Maghraoui-Meherzi, H.
2010
340-342 15 p. 3101-3105
5 p.
article
81 Structural, optical, photocatalytic and antibacterial activity of zinc oxide and manganese doped zinc oxide nanoparticles Rekha, K.
2010
340-342 15 p. 3180-3185
6 p.
article
82 Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method Asghar, M.
2012
340-342 15 p. 3038-3040
3 p.
article
83 Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes Gaubas, E.
2012
340-342 15 p. 2998-3001
4 p.
article
84 Symmetry and structure of N–O shallow donor complexes in silicon Alt, H.Ch.
2012
340-342 15 p. 2985-2988
4 p.
article
85 Synthesis and luminescence properties of ZnO:Tb3+ nanotube arrays via electrodeposited method Zhao, Shihua
2010
340-342 15 p. 3200-3204
5 p.
article
86 The CuPL defect and the Cus1Cui3 complex Estreicher, S.K.
2012
340-342 15 p. 2967-2969
3 p.
article
87 The influence of nitrogen vacancies on the magnetic behaviour of rare-earth nitrides Ruck, B.J.
2012
340-342 15 p. 2954-2956
3 p.
article
88 The interface structure of high performance ZnO Schottky diodes Mayes, Edwin L.H.
2012
340-342 15 p. 2867-2870
4 p.
article
89 The manuscript for these proceedings were received by the Publisher: begining of July 2011 2012
340-342 15 p. iv-
1 p.
article
90 Theoretical study of band gap in CuAlO2: Pressure dependence and self-interaction correction Nakanishi, Akitaka
2012
340-342 15 p. 2861-2863
3 p.
article
91 Thermal evolution of surface blistering and exfoliation due to ion-implanted hydrogen monomers into Si〈111〉 Liang, J.H.
2012
340-342 15 p. 3020-3025
6 p.
article
92 Thermal properties of 1T-TaS2 at the onset of charge density wave states Balaguru Rayappan, John Bosco
2010
340-342 15 p. 3172-3175
4 p.
article
93 The study of below and above band-edge imperfection states in In2S3 solar energy materials Ho, Ching-Hwa
2012
340-342 15 p. 3052-3055
4 p.
article
94 The surface blistering kinetics and the H-platelet evolution in H-implanted germanium Yang, Fan
2012
340-342 15 p. 2943-2946
4 p.
article
95 Third-order elastic moduli for alkali-halide crystals possessing the sodium chloride structure Ray, U.
2010
340-342 15 p. 3063-3068
6 p.
article
96 Three carbon pairs in Si Docaj, A.
2012
340-342 15 p. 2981-2984
4 p.
article
97 Ultrasonic attenuation of CdSe at low temperatures Fernández, B.J.
2010
340-342 15 p. 3069-3074
6 p.
article
98 UV-laser-light-controlled photoluminescence of metal oxide nanoparticles in different gas atmospheres: BaTiO3, SrTiO3 and HfO2 Mochizuki, Shosuke
2012
340-342 15 p. 2889-2894
6 p.
article
99 Volume dependence of thermal expansivity for hcp iron Sharma, S.K.
2010
340-342 15 p. 3145-3148
4 p.
article
                             99 results found
 
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