| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A hydrodynamic description of quantum Hall effect breakdown
|
Eaves, L
|
|
1999
|
272 |
1-4 |
p. 130-132
3 p.
|
artikel
|
| 2 |
Analysis of electron energy distribution function in ultra-thin gate oxide n-MOSFETs using Monte Carlo simulation for direct tunneling gate current calculation
|
Cassan, E
|
|
1999
|
272 |
1-4 |
p. 550-553
4 p.
|
artikel
|
| 3 |
Analysis of electron incoherence effects in solid-state biprism devices
|
Machida, N.
|
|
1999
|
272 |
1-4 |
p. 82-84
3 p.
|
artikel
|
| 4 |
Analysis of hole transport in cubic phase of p-type GaN by relaxation time approximation
|
Hayashi, Yasuhiko
|
|
1999
|
272 |
1-4 |
p. 256-259
4 p.
|
artikel
|
| 5 |
Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy
|
Tsen, K.T
|
|
1999
|
272 |
1-4 |
p. 416-418
3 p.
|
artikel
|
| 6 |
Biexcitonic nonlinear response in GaAs thin film studied by degenerate four-wave mixing
|
Akiyama, Koich
|
|
1999
|
272 |
1-4 |
p. 505-508
4 p.
|
artikel
|
| 7 |
Carrier dynamics and recombination processes of charged excitons in a GaAs/AlGaAs quantum well
|
Hogg, R.A
|
|
1999
|
272 |
1-4 |
p. 412-415
4 p.
|
artikel
|
| 8 |
Carrier dynamics in double barrier diodes incorporating quantum dots
|
Patanè, A
|
|
1999
|
272 |
1-4 |
p. 21-23
3 p.
|
artikel
|
| 9 |
Carrier dynamics in quantum dot structures with different interdot spacings
|
Marcinkevičius, Saulius
|
|
1999
|
272 |
1-4 |
p. 36-38
3 p.
|
artikel
|
| 10 |
Carrier dynamics in site-controlled InAs dots analyzed by time-resolved micro-photoluminescence
|
Nishimura, Tetsuya
|
|
1999
|
272 |
1-4 |
p. 53-56
4 p.
|
artikel
|
| 11 |
Carrier dynamics in the quantum kinetics regime
|
Hügel, W.A
|
|
1999
|
272 |
1-4 |
p. 313-317
5 p.
|
artikel
|
| 12 |
Carrier screening and polarization fields in nitride-based heterostructure devices
|
Sala, Fabio Della
|
|
1999
|
272 |
1-4 |
p. 397-401
5 p.
|
artikel
|
| 13 |
Challenge and prospects for silicon SET/FET hybrid circuits
|
Toriumi, A.
|
|
1999
|
272 |
1-4 |
p. 522-526
5 p.
|
artikel
|
| 14 |
Chaos-induced orbit delocalization and complex Bloch oscillations in semiconductor superlattices
|
Tench, C.R
|
|
1999
|
272 |
1-4 |
p. 209-212
4 p.
|
artikel
|
| 15 |
Chaotic ray dynamics and fast optical switching in micro-cavities with a graded refractive index
|
Wilkinson, P.B
|
|
1999
|
272 |
1-4 |
p. 484-487
4 p.
|
artikel
|
| 16 |
Characteristics of GaAs Schottky in-plane gate quantum wire transistors for switching of quantized conductance
|
Okada, Hiroshi
|
|
1999
|
272 |
1-4 |
p. 123-126
4 p.
|
artikel
|
| 17 |
Charge glass transition in disordered two-dimensional arrays of mesoscopic grains
|
Enomoto, Yoshihisa
|
|
1999
|
272 |
1-4 |
p. 64-67
4 p.
|
artikel
|
| 18 |
Coherent control of carrier–phonon scattering processes
|
Herbst, M.
|
|
1999
|
272 |
1-4 |
p. 356-359
4 p.
|
artikel
|
| 19 |
Coherent control of electron–hole populations in GaAs
|
Fraser, J.M.
|
|
1999
|
272 |
1-4 |
p. 353-355
3 p.
|
artikel
|
| 20 |
Coherent control of the transient spontaneous emission from two-dimensional excitons
|
Woerner, Michael
|
|
1999
|
272 |
1-4 |
p. 363-366
4 p.
|
artikel
|
| 21 |
Coherent effects in resonant quantum well optical emission
|
Garro, N
|
|
1999
|
272 |
1-4 |
p. 371-374
4 p.
|
artikel
|
| 22 |
Coherent THz plasmons in GaAs/AlGaAs superlattices
|
Bratschitsch, R
|
|
1999
|
272 |
1-4 |
p. 375-377
3 p.
|
artikel
|
| 23 |
Complex behavior due to electron heating in superlattices exhibiting high-frequency current oscillations
|
Steuer, H
|
|
1999
|
272 |
1-4 |
p. 202-204
3 p.
|
artikel
|
| 24 |
Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors
|
Kasai, Seiya
|
|
1999
|
272 |
1-4 |
p. 88-91
4 p.
|
artikel
|
| 25 |
Continuous stimulated terahertz emission due to intra-center population inversion in uniaxially strained germanium
|
Altukhov, I.V
|
|
1999
|
272 |
1-4 |
p. 458-460
3 p.
|
artikel
|
| 26 |
Cyclotron–Stark–phonon–photon resonances in semiconductor superlattices under terahertz irradiation
|
Kleinert, P
|
|
1999
|
272 |
1-4 |
p. 448-450
3 p.
|
artikel
|
| 27 |
2D bipolar Monte Carlo calculation of current fluctuations at the onset of quasisaturation of a Si BJT
|
Martı́n Martı́nez, M.J
|
|
1999
|
272 |
1-4 |
p. 263-266
4 p.
|
artikel
|
| 28 |
Decay of the longitudinal optical phonons in wurtzite GaN and Al x Ga1−x N
|
Tsen, K.T
|
|
1999
|
272 |
1-4 |
p. 406-408
3 p.
|
artikel
|
| 29 |
3-D granular Monte Carlo simulation of silicon n-MOSFETs
|
Wordelman, C.J
|
|
1999
|
272 |
1-4 |
p. 568-571
4 p.
|
artikel
|
| 30 |
Dicke superradiance in a magnetoplasma
|
Brandes, Tobias
|
|
1999
|
272 |
1-4 |
p. 341-343
3 p.
|
artikel
|
| 31 |
Dressed semiconductor bloch equations: coherence versus Coulomb scattering in resonantly excited quantum wells
|
Ciuti, C.
|
|
1999
|
272 |
1-4 |
p. 335-337
3 p.
|
artikel
|
| 32 |
Drude absorption and electron localization in GaAs/AlGaAs superlattices
|
Tamura, K
|
|
1999
|
272 |
1-4 |
p. 183-186
4 p.
|
artikel
|
| 33 |
Dynamics of filamentary currents in Corbino discs under magnetic fields
|
Aoki, Kazunori
|
|
1999
|
272 |
1-4 |
p. 274-278
5 p.
|
artikel
|
| 34 |
Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR laser radiation
|
Shul'man, A.Ya
|
|
1999
|
272 |
1-4 |
p. 442-447
6 p.
|
artikel
|
| 35 |
Effect of intercarrier scattering on intersubband transitions in GaAs/AlGaAs quantum well systems
|
Dür, Manfred
|
|
1999
|
272 |
1-4 |
p. 230-233
4 p.
|
artikel
|
| 36 |
Effect of stray capacitances in a multiple-tunnel junction memory device
|
Jalil, M.B.A
|
|
1999
|
272 |
1-4 |
p. 92-95
4 p.
|
artikel
|
| 37 |
Effects of stimulated optical phonon decay on hot carriers in GaAs
|
Romanov, D.A
|
|
1999
|
272 |
1-4 |
p. 422-424
3 p.
|
artikel
|
| 38 |
Electron spreading effects in quantum well pixelless imagers
|
Khmyrova, I
|
|
1999
|
272 |
1-4 |
p. 502-504
3 p.
|
artikel
|
| 39 |
Electron temperature and cooling of 2D hot electron gas in deep quantum wells
|
Zakhleniuk, N.A
|
|
1999
|
272 |
1-4 |
p. 309-312
4 p.
|
artikel
|
| 40 |
Electron transport in a large spin-splitting 2DEG in InAs/AlGaSb heterostructures
|
Sasa, S
|
|
1999
|
272 |
1-4 |
p. 149-152
4 p.
|
artikel
|
| 41 |
Energy exchange in single-particle electron–electron scattering
|
Ferry, D.K.
|
|
1999
|
272 |
1-4 |
p. 538-541
4 p.
|
artikel
|
| 42 |
Energy loss rate of excitons in GaN
|
Hägele, D
|
|
1999
|
272 |
1-4 |
p. 409-411
3 p.
|
artikel
|
| 43 |
Energy loss to bound hydrogen at the Si surface
|
Ferry, D.K
|
|
1999
|
272 |
1-4 |
p. 535-537
3 p.
|
artikel
|
| 44 |
Ensemble Monte Carlo simulation of optical excitation of AlGaAs
|
Shifren, L.
|
|
1999
|
272 |
1-4 |
p. 419-421
3 p.
|
artikel
|
| 45 |
Excitonic and biexcitonic effects in the coherent optical response of semiconductor quantum dots
|
Hohenester, Ulrich
|
|
1999
|
272 |
1-4 |
p. 1-4
4 p.
|
artikel
|
| 46 |
Excitonic polarization grating in semiconductors induced by short light pulses
|
Kavokin, Alexey V
|
|
1999
|
272 |
1-4 |
p. 509-512
4 p.
|
artikel
|
| 47 |
Exciton spin relaxation in semiconductor quantum wells: the role of disorder
|
Henneberger, Fritz
|
|
1999
|
272 |
1-4 |
p. 324-327
4 p.
|
artikel
|
| 48 |
Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots
|
Jung, S.K
|
|
1999
|
272 |
1-4 |
p. 18-20
3 p.
|
artikel
|
| 49 |
Fast modulation of infrared light by hot electrons in tunnel-coupled GaAs/AlGaAs quantum wells
|
Vorobjev, L.E
|
|
1999
|
272 |
1-4 |
p. 451-453
3 p.
|
artikel
|
| 50 |
Femtosecond exciton broadening in ternary II–VI semiconductor quantum wells
|
Netti, M.C
|
|
1999
|
272 |
1-4 |
p. 381-383
3 p.
|
artikel
|
| 51 |
Femto-second photoreflectance spectroscopy of relaxation and tunneling processes in asymmetric GaAs/AlGaAs double quantum wells
|
Suzumura, N
|
|
1999
|
272 |
1-4 |
p. 378-380
3 p.
|
artikel
|
| 52 |
Femtosecond pulse shaping for coherent carrier control
|
Heberle, A.P
|
|
1999
|
272 |
1-4 |
p. 360-362
3 p.
|
artikel
|
| 53 |
Femtosecond relaxation dynamics of hot carriers in photoexcited In0.53Ga0.47As
|
Hamanaka, Y
|
|
1999
|
272 |
1-4 |
p. 391-393
3 p.
|
artikel
|
| 54 |
Field-induced delocalization and Zener breakdown in semiconductor superlattices
|
Rosam, B
|
|
1999
|
272 |
1-4 |
p. 180-182
3 p.
|
artikel
|
| 55 |
First principles modeling of high field transport in wide-band-gap materials
|
Dür, Manfred
|
|
1999
|
272 |
1-4 |
p. 295-298
4 p.
|
artikel
|
| 56 |
Fokker–Planck type approach to hot carriers in semiconductor submicron structures
|
Abe, Yutaka
|
|
1999
|
272 |
1-4 |
p. 302-305
4 p.
|
artikel
|
| 57 |
Full band Monte Carlo simulation for temperature-dependent electron transport in gallium nitride
|
Ando, Yuji
|
|
1999
|
272 |
1-4 |
p. 253-255
3 p.
|
artikel
|
| 58 |
Generalized transfer-fields and Langevin forces for hot-carrier fluctuations in semiconductor submicron devices
|
Starikov, E
|
|
1999
|
272 |
1-4 |
p. 260-262
3 p.
|
artikel
|
| 59 |
High-field electron transport in GaInP
|
Sakamoto, R
|
|
1999
|
272 |
1-4 |
p. 250-252
3 p.
|
artikel
|
| 60 |
Homogeneous line width of optical transitions and electronic energy relaxation in quantum dots
|
Král, K
|
|
1999
|
272 |
1-4 |
p. 15-17
3 p.
|
artikel
|
| 61 |
Hot carrier relaxation in GaN:LO phonon scattering and excitonic effects
|
O'Sullivan, E.D
|
|
1999
|
272 |
1-4 |
p. 402-405
4 p.
|
artikel
|
| 62 |
Hot carrier relaxation in InAs/GaAs quantum dots
|
Heitz, R
|
|
1999
|
272 |
1-4 |
p. 8-11
4 p.
|
artikel
|
| 63 |
Hot carrier scaling of localization in a quantum dot array
|
Lin, L.-H
|
|
1999
|
272 |
1-4 |
p. 49-52
4 p.
|
artikel
|
| 64 |
Hot electron intervalley transfer in GaAs–AlAs MQWs: population inversion and possibility of intraband lasing
|
Aleshkin, V.Ya
|
|
1999
|
272 |
1-4 |
p. 139-142
4 p.
|
artikel
|
| 65 |
Hot electrons in superlattices: quantum transport versus Boltzmann equation
|
Wacker, A
|
|
1999
|
272 |
1-4 |
p. 157-159
3 p.
|
artikel
|
| 66 |
Impact-ionization-induced noise in InGaAs-based 0.1-μm-gate HEMTs
|
Shigekawa, N
|
|
1999
|
272 |
1-4 |
p. 562-564
3 p.
|
artikel
|
| 67 |
Impact ionization of DX−-centers in GaAs : Si by hot electrons
|
Asche, M
|
|
1999
|
272 |
1-4 |
p. 241-243
3 p.
|
artikel
|
| 68 |
Index
|
|
|
1999
|
272 |
1-4 |
p. 578-581
4 p.
|
artikel
|
| 69 |
Index
|
|
|
1999
|
272 |
1-4 |
p. 582-584
3 p.
|
artikel
|
| 70 |
Influence of hot carrier dynamics on pulse propagation in semiconductor lasers
|
Kauer, M
|
|
1999
|
272 |
1-4 |
p. 394-396
3 p.
|
artikel
|
| 71 |
Influence of laser intensity on carrier generation in MOSFETs
|
Tanaka, M
|
|
1999
|
272 |
1-4 |
p. 554-557
4 p.
|
artikel
|
| 72 |
Influence of non-linear effects on very short pMOSFET device performances
|
Houlet, Patrice
|
|
1999
|
272 |
1-4 |
p. 572-574
3 p.
|
artikel
|
| 73 |
Instabilities caused by avalanche in single barrier diodes
|
Krotkus, A
|
|
1999
|
272 |
1-4 |
p. 267-269
3 p.
|
artikel
|
| 74 |
Intrasubband and intersubband scattering in semiconductor quantum wires
|
Ambigapathy, R
|
|
1999
|
272 |
1-4 |
p. 107-109
3 p.
|
artikel
|
| 75 |
Intrasubband fast absorption and emission of terahertz radiation by hot electrons in GaAs/AlGaAs MQW
|
Vorobjev, L.E
|
|
1999
|
272 |
1-4 |
p. 223-225
3 p.
|
artikel
|
| 76 |
Intrinsic non-linearities in exciton-cavity-coupled systems
|
Saba, M
|
|
1999
|
272 |
1-4 |
p. 472-475
4 p.
|
artikel
|
| 77 |
Investigation of the H-band radiation in GaAs/AlGaAs heterostructures by photoluminescence and optically detected cyclotron resonance measurements
|
Fujii, K
|
|
1999
|
272 |
1-4 |
p. 454-457
4 p.
|
artikel
|
| 78 |
Joint effect of Fermi and Coulomb correlations on shot-noise suppression in ballistic conductors
|
González, T
|
|
1999
|
272 |
1-4 |
p. 285-287
3 p.
|
artikel
|
| 79 |
k ||=0 filtering effects in ballistic electron transport through sub-surface resonant tunneling diodes
|
Heer, R
|
|
1999
|
272 |
1-4 |
p. 187-189
3 p.
|
artikel
|
| 80 |
Lateral tunneling through the controlled barrier between edge channels in a two-dimensional electron gas system
|
Shashkin, A.A
|
|
1999
|
272 |
1-4 |
p. 133-135
3 p.
|
artikel
|
| 81 |
Light-hole Stark-ladder photoluminescence induced by heavy-hole–light-hole resonance in a GaAs/InAlAs superlattice
|
Kuroyanagi, K.
|
|
1999
|
272 |
1-4 |
p. 198-201
4 p.
|
artikel
|
| 82 |
Link between hot electrons and interface damage in n-MOSFETs: A Monte Carlo analysis
|
Ravaioli, U
|
|
1999
|
272 |
1-4 |
p. 542-545
4 p.
|
artikel
|
| 83 |
Magnetic field quenching of miniband conduction in quasi-one-dimensional superlattices
|
Eaves, L.
|
|
1999
|
272 |
1-4 |
p. 190-193
4 p.
|
artikel
|
| 84 |
Magnetotransport in an InAs/AlGaSb quantum wire with a weak periodic potential
|
Maemoto, T
|
|
1999
|
272 |
1-4 |
p. 110-113
4 p.
|
artikel
|
| 85 |
Magnetotransport study of sub-100nm line-and-space structure: Weiss oscillation in a short period planar structure
|
Yamaguchi, M
|
|
1999
|
272 |
1-4 |
p. 136-138
3 p.
|
artikel
|
| 86 |
Many-body effects in carrier capture and energy relaxation in self-organized InAs/GaAs quantum dots
|
Yuan, Z.L
|
|
1999
|
272 |
1-4 |
p. 12-14
3 p.
|
artikel
|
| 87 |
Many-body effects in intersubband transitions of modulation-doped quantum wells
|
Nottelmann, B.
|
|
1999
|
272 |
1-4 |
p. 234-236
3 p.
|
artikel
|
| 88 |
Microwave-induced multiple field-domain structure in photoexcited GaAs crystals
|
Subačiusa , L
|
|
1999
|
272 |
1-4 |
p. 288-290
3 p.
|
artikel
|
| 89 |
Microwave spectroscopy of a double quantum dot in the low- and high-power regime
|
van der Wiel, W.G
|
|
1999
|
272 |
1-4 |
p. 31-35
5 p.
|
artikel
|
| 90 |
Monte Carlo simulation of conductance characteristics in SOI-MOSFET
|
Araya, S
|
|
1999
|
272 |
1-4 |
p. 565-567
3 p.
|
artikel
|
| 91 |
Monte Carlo simulation of hot-electron-induced dielectric breakdown in thin silicon dioxide films
|
Kamakura, Yoshinari
|
|
1999
|
272 |
1-4 |
p. 532-534
3 p.
|
artikel
|
| 92 |
Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMTs
|
Zandler, G
|
|
1999
|
272 |
1-4 |
p. 558-561
4 p.
|
artikel
|
| 93 |
Monte Carlo study on electron motion under mid-infrared free-electron-laser pulses
|
Mori, N
|
|
1999
|
272 |
1-4 |
p. 431-433
3 p.
|
artikel
|
| 94 |
Multi-band simulation of resonant tunneling diodes with scattering effects
|
Ogawa, Matsuto
|
|
1999
|
272 |
1-4 |
p. 167-170
4 p.
|
artikel
|
| 95 |
Nanomechanical resonators operating at radio frequencies
|
Erbe, Artur
|
|
1999
|
272 |
1-4 |
p. 575-577
3 p.
|
artikel
|
| 96 |
Non-linear carrier dynamics in hot electron vertical cavity surface emitting laser
|
Balkan, N
|
|
1999
|
272 |
1-4 |
p. 480-483
4 p.
|
artikel
|
| 97 |
Numerical simulation of crystallographic direction-dependent impact ionization process on GaAs
|
Jung, H.K
|
|
1999
|
272 |
1-4 |
p. 244-246
3 p.
|
artikel
|
| 98 |
Observation of acoustic phonon Stokes and anti-Stokes peaks due to assisted tunnelling in a triple barrier structure
|
Cavill, S.A
|
|
1999
|
272 |
1-4 |
p. 171-174
4 p.
|
artikel
|
| 99 |
Observation of bottleneck effects on the photoluminescence from polaritons in II–VI microcavities
|
Müller, M
|
|
1999
|
272 |
1-4 |
p. 476-479
4 p.
|
artikel
|
| 100 |
Observation of N-shaped negative differential resistance in ridge-type InGaAs/InAlAs quantum wire field-effect transistor
|
Kim, S.J
|
|
1999
|
272 |
1-4 |
p. 117-122
6 p.
|
artikel
|
| 101 |
Odd terahertz optical sidebands from asymmetric excitonic intersubband excitation
|
Su, M.Y
|
|
1999
|
272 |
1-4 |
p. 438-441
4 p.
|
artikel
|
| 102 |
On the non-orthogonality problem in the description of quantum devices
|
Fransson, Jonas
|
|
1999
|
272 |
1-4 |
p. 28-30
3 p.
|
artikel
|
| 103 |
Optical and transport studies of hot electrons in modulation-doped quantum wires
|
Maciel, A.C
|
|
1999
|
272 |
1-4 |
p. 101-106
6 p.
|
artikel
|
| 104 |
Optically detected intersublevel resonance in InAs/GaAs self-assembled quantum dots
|
Murdin, B.N
|
|
1999
|
272 |
1-4 |
p. 5-7
3 p.
|
artikel
|
| 105 |
Phase diagram of static and dynamic electric field domain formation in semiconductor superlattices
|
Ohtani, N
|
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Phenomenological theory of the Rabi oscillation in coupled quantum dots
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Phonon emission from coupled quantum dots
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Photoluminescence from hot electrons in quasi-one- and two- dimensional systems
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Photoluminescence from two-dimensional electron gas in AlGaAs/GaAs heterojunctions under high electric fields
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Photon-assisted magnetophonon resonance in a GaAs/AlGaAs heterojunction driven by intense terahertz radiations
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Photon Bloch oscillations in laterally confined Bragg mirrors
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Picosecond and femtosecond near-field optical spectroscopy of carrier dynamics in semiconductor nanostructures
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Picosecond electron-spin relaxation in GaAs/AlGaAs quantum wells and InGaAs/InP quantum wells
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Picosecond time-resolved cyclotron resonance of non-equilibrium carriers in semiconductors
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Prediction of enhanced shot-noise in tunneling-controlled transport
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Quantum effects in nanometer MOS structures
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Quantum gates by coupled quantum dots and measurement procedure in Si MOSFET
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Quantum hole transport in GaAs–Ge–GaAs lateral narrow junctions
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Quantum information in semiconductor-based nanostructures
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Quantum versus classical scattering in semiconductor charge transport: a quantitative comparison
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Bertoni, Andrea
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Relation between spin and momentum relaxation in ZnSe/ZnMgSSe quantum wells
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Relaxation of electrons within AlAs barriers studied by hot electron spectroscopy
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Relaxation of optically excited 4f electrons in Er-doped Ga x In1−x P
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Resonant tunneling spectroscopy of InAs quantum dots buried in the GaAs
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Saturation of phase breaking in an open ballistic quantum dot
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Scattering and Bloch oscillation in semiconductor superlattices
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Self-consistent hopping transport in superlattices: non-equilibrium distribution functions and electron heating
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Shot-noise suppression in nondegenerate semiconductors: the role of an energy-dependent scattering time
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Simulation of Si multiple tunnel junctions
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Simultaneous investigation of vertical transport and intersubband absorption in a superlattice: Continuum Wannier–Stark ladders and next-nearest-neighbor tunneling
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Spatially resolved measurements of hot-electron generation and relaxation at the breakdown of the quantum Hall effect
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Speeding-up optical nonlinearities in hetero-n–i–p–i-structures by recombination contacts
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Spin-dependent terahertz nonlinearities at inter-valence-band absorption in p-Ge
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Spin-dependent transport phenomena in a HEMT
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Spin-splitting transport in In0.75Ga0.25As/In0.75Al0.25As quantum wire field-effect-transistor
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Static screening approximations for calculations of intersubband electron–electron scattering rates in semiconductor quantum wells
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Strong exciton binding in hybrid GaAs-based nanostructures
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Study of coherent LO phonon–plasmon coupled modes in n-GaAs by spectrally resolved pump–probe measurement
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Study of the steady state and dynamical behavior of semiconductor optical amplifiers
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Suppression of exciton–polariton light absorption in multiple quantum well Bragg structures
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Symmetry-breaking multiple current filamentation in n-GaAs
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Terahertz-electroluminescence in a quantum cascade structure
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Terahertz lasers using inter-subband transitions in quantum wells: predictions from Monte Carlo simulation
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Theoretical and experimental characterizations of hot electron emission of n-Si/CaF2/Au emitter used in hot electron detection experiment
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Zhang, B.Y
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Theoretical insights into CoSi2/CaF2 tunneling diodes
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Theoretical study and simulation of electron dynamics in quantum cascade lasers
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Theory of channel hot-carrier degradation in MOSFETs
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Thermal conductivity of nonequilibrium carriers
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The study of non-linearities in photodiodes using electrical auto-correlation
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The transition to chaos for hot electrons in a wide quantum well
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THz electromagnetic wave radiation from semiconductor microcavities in nonperturbative regime
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Transient carrier dynamics calculation in time domain; Coulomb scattering within RPA
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Transient studies of light emission from travelling space charge domains in GaAs and Ga1−x Al x As
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Transport coefficients for carriers with fractional exclusion statistics: the correlation function approach
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Greiner, Andreas
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Ultrafast carrier–carrier scattering in Al x Ga1−x As/GaAs quantum wells
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Ultrafast high-field transport in semiconductors
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Ultrafast relaxation of interband-polarization via carrier–LO phonon scattering in depletion field
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Ultrafast spectral hole burning in intersubband absorption bands of quantum-well-structures
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Vertical quantum dots with elliptically deformed cross sections
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Voltage and temperature limits for the operation of a quantum dot ratchet
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Linke, H
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When do excitons really exist?
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Hägele, D
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1999
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artikel
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