| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AAS oscillations in antidot lattices
|
Nakanishi, Takeshi
|
|
1996
|
227 |
1-4 |
p. 127-130
4 p.
|
artikel
|
| 2 |
AC-conductance of one-dimensional, long-range correlated electrons
|
Cuniberti, Gianaurelio
|
|
1996
|
227 |
1-4 |
p. 256-258
3 p.
|
artikel
|
| 3 |
Advanced self-organized epitaxy for GaAs quantum wire arrays
|
Miyao, M.
|
|
1996
|
227 |
1-4 |
p. 287-290
4 p.
|
artikel
|
| 4 |
AFM-based fabrication of Si nanostructures
|
Campbell, P.M.
|
|
1996
|
227 |
1-4 |
p. 315-317
3 p.
|
artikel
|
| 5 |
AFM fabrication of metal-oxide devices with in situ control of electrical properties
|
Snow, E.S.
|
|
1996
|
227 |
1-4 |
p. 279-281
3 p.
|
artikel
|
| 6 |
Analysis of antidot lattices with periodic orbit theory
|
Uryu, S.
|
|
1996
|
227 |
1-4 |
p. 138-140
3 p.
|
artikel
|
| 7 |
Analysis of valence-subband structures in a quantum wire with an arbitrary cross-section
|
Ogawa, M.
|
|
1996
|
227 |
1-4 |
p. 65-68
4 p.
|
artikel
|
| 8 |
Andreev reflection and quantum transport in an SNS junction
|
Takayanagi, Hideaki
|
|
1996
|
227 |
1-4 |
p. 224-228
5 p.
|
artikel
|
| 9 |
A new fabrication method of ultra small tunnel junctions
|
Ootuka, Youiti
|
|
1996
|
227 |
1-4 |
p. 307-309
3 p.
|
artikel
|
| 10 |
Angular dependent cyclotron resonance in short period (GaAs) n /(AlAs) n superlattices
|
Yamanaka, K.
|
|
1996
|
227 |
1-4 |
p. 356-359
4 p.
|
artikel
|
| 11 |
A novel fabrication method of Si mesoscopic structures on Al2O3 by selective epitaxial growth using electron beam irradiation
|
Yanagiya, Shun-ichi
|
|
1996
|
227 |
1-4 |
p. 326-329
4 p.
|
artikel
|
| 12 |
Ballistic transport in the upper subband of a two-dimensional electron system
|
Lu, J.P.
|
|
1996
|
227 |
1-4 |
p. 69-73
5 p.
|
artikel
|
| 13 |
Bulk conductivity at quantum Hall plateaux by magnetocapacitance measurement
|
Oto, K.
|
|
1996
|
227 |
1-4 |
p. 189-191
3 p.
|
artikel
|
| 14 |
Capacitance dependence of critical tunneling resistance for superconductor-insulator transition in two-dimensional network of Josephson junctions
|
Yagi, Ryuta
|
|
1996
|
227 |
1-4 |
p. 232-234
3 p.
|
artikel
|
| 15 |
Carbon nanotubes: Effects of magnetic fields on lattice distortions
|
Ajiki, Hiroshi
|
|
1996
|
227 |
1-4 |
p. 342-345
4 p.
|
artikel
|
| 16 |
Characterization of precisely width-controlled Si quantum wires fabricated on SOI substrates
|
Hiramoto, T.
|
|
1996
|
227 |
1-4 |
p. 95-97
3 p.
|
artikel
|
| 17 |
Classical and wave-mechanical aspects of magneto-transport fluctuations in ballistic quantum dots
|
Edwards, G.
|
|
1996
|
227 |
1-4 |
p. 144-147
4 p.
|
artikel
|
| 18 |
Coherence and phase sensitive measurements with a quantum dot
|
Heiblum, M.
|
|
1996
|
227 |
1-4 |
p. 119-121
3 p.
|
artikel
|
| 19 |
Composite fermions: Their scattering and their spin
|
Stormer, H.L.
|
|
1996
|
227 |
1-4 |
p. 164-169
6 p.
|
artikel
|
| 20 |
Conductance fluctuations in PbTe wide parabolic quantum wells
|
Oswald, J.
|
|
1996
|
227 |
1-4 |
p. 360-362
3 p.
|
artikel
|
| 21 |
Conductance fluctuations in quantum wire systems: A comparison between different scattering models
|
Grincwajg, Anna
|
|
1996
|
227 |
1-4 |
p. 54-56
3 p.
|
artikel
|
| 22 |
Co-tunneling current in very small Si single-electron transistors
|
Takahashi, Y.
|
|
1996
|
227 |
1-4 |
p. 105-108
4 p.
|
artikel
|
| 23 |
Coulomb blockade and incoherent Cooper pair tunneling in ultrasmall Josephson double junctions with external circuits
|
Iwabuchi, Shuichi
|
|
1996
|
227 |
1-4 |
p. 245-248
4 p.
|
artikel
|
| 24 |
Dependence of Coulomb blockade in ultrasmall single tunnel junctions on tunnel resistance
|
Shimazu, Yoshihiro
|
|
1996
|
227 |
1-4 |
p. 102-104
3 p.
|
artikel
|
| 25 |
Design and fabrication of GaAs/AlGaAs single electron transistors based on in-plane Schottky gate control of 2DEG
|
Tomozawa, H.
|
|
1996
|
227 |
1-4 |
p. 112-115
4 p.
|
artikel
|
| 26 |
Distribution of ‘scarred’ eigenfunctions in a quantum well with chaotic classical dynamics probed by resonant tunnelling
|
Wilkinson, P.B.
|
|
1996
|
227 |
1-4 |
p. 192-196
5 p.
|
artikel
|
| 27 |
Editorial Board
|
|
|
1996
|
227 |
1-4 |
p. ii-
1 p.
|
artikel
|
| 28 |
Effect of donor layer ordering on the formation of single mode quantum wires
|
Stopa, M.
|
|
1996
|
227 |
1-4 |
p. 61-64
4 p.
|
artikel
|
| 29 |
Effect of self-capicitance on charge Kosterlitz-Thouless transition in two-dimensional arrays of small tunnel junctions
|
Kanda, Akinobu
|
|
1996
|
227 |
1-4 |
p. 238-240
3 p.
|
artikel
|
| 30 |
Effects of disorder and electron-electron interactions on orbital magnetism in quantum dots
|
Tamura, Hiroyuki
|
|
1996
|
227 |
1-4 |
p. 21-23
3 p.
|
artikel
|
| 31 |
Effects of growth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structures
|
Wakaya, F.
|
|
1996
|
227 |
1-4 |
p. 268-270
3 p.
|
artikel
|
| 32 |
Electronic excitations in quantum wires and dots
|
Abstreiter, G.
|
|
1996
|
227 |
1-4 |
p. 6-10
5 p.
|
artikel
|
| 33 |
Electronic interactions between quantum dots
|
Kotthaus, Jörg P.
|
|
1996
|
227 |
1-4 |
p. 1-5
5 p.
|
artikel
|
| 34 |
Electron-phonon interaction and the so-called phonon bottleneck effect in semiconductor quantum dots
|
Inoshita, T.
|
|
1996
|
227 |
1-4 |
p. 373-377
5 p.
|
artikel
|
| 35 |
Electron transport in the quantum Hall regime in strained Si/SiGe
|
Ismail, K.
|
|
1996
|
227 |
1-4 |
p. 310-314
5 p.
|
artikel
|
| 36 |
Exciton binding and delocalization in T-shaped quantum wires
|
Bryant, Garnett W.
|
|
1996
|
227 |
1-4 |
p. 390-392
3 p.
|
artikel
|
| 37 |
Experimental evidence for boundary and impurity scattering related crossover in quasi-ballistic wires
|
Ochiai, Y.
|
|
1996
|
227 |
1-4 |
p. 152-155
4 p.
|
artikel
|
| 38 |
Fabrication of atomically defined oxide films on Si by laser molecular beam epitaxy
|
Koinuma, H.
|
|
1996
|
227 |
1-4 |
p. 323-325
3 p.
|
artikel
|
| 39 |
Fabrication of mesoscopic structures on n-GaAs surfaces by electrochemical scanning electron microscope
|
Kaneshiro, C.
|
|
1996
|
227 |
1-4 |
p. 271-275
5 p.
|
artikel
|
| 40 |
Fabrication processes for low threshold InGaAs vertical-cavity surface-emitting lasers
|
Mukaihara, T.
|
|
1996
|
227 |
1-4 |
p. 400-403
4 p.
|
artikel
|
| 41 |
GaAs/AlGaAs device fabrication using MBE growth and in situ focused ion beam lithography
|
Jones, G.A.C.
|
|
1996
|
227 |
1-4 |
p. 264-267
4 p.
|
artikel
|
| 42 |
Guided modes in an arbitrarily oriented Si-quantum wire and their control
|
Okawa, Yasushi
|
|
1996
|
227 |
1-4 |
p. 330-332
3 p.
|
artikel
|
| 43 |
High field transport properties of InAs/AlGaSb quantum wires
|
Sasa, S.
|
|
1996
|
227 |
1-4 |
p. 363-366
4 p.
|
artikel
|
| 44 |
Imaging of edge channels in the integer quantum Hall regime by the lateral photoelectric effect
|
van Haren, R.J.F.
|
|
1996
|
227 |
1-4 |
p. 186-188
3 p.
|
artikel
|
| 45 |
Index of authors and papers
|
|
|
1996
|
227 |
1-4 |
p. 419-425
7 p.
|
artikel
|
| 46 |
Light emission from vertical-microcavity quantum dot laser structures
|
Nishioka, M.
|
|
1996
|
227 |
1-4 |
p. 404-406
3 p.
|
artikel
|
| 47 |
Light emission of quantum-well-exciton polaritons in single quantum wells
|
Katayama, Shin-ichi
|
|
1996
|
227 |
1-4 |
p. 393-396
4 p.
|
artikel
|
| 48 |
Magnetic field effects in p-type modulation-doped GaAs quantum wires
|
Nomura, Shintaro
|
|
1996
|
227 |
1-4 |
p. 38-41
4 p.
|
artikel
|
| 49 |
Magneto-optical properties of InAs monolayers and In y Al1−y As self-assembled quantum dots in Ga(Al)As matrices
|
Wang, P.D.
|
|
1996
|
227 |
1-4 |
p. 378-383
6 p.
|
artikel
|
| 50 |
Magneto-photoluminescence spectra of excitons in GaP/AlP short period superlattices in high magnetic fields
|
Uchida, K.
|
|
1996
|
227 |
1-4 |
p. 352-355
4 p.
|
artikel
|
| 51 |
Magnetotransport in modulated and magnetic fields
|
Iye, Y.
|
|
1996
|
227 |
1-4 |
p. 122-126
5 p.
|
artikel
|
| 52 |
Measurement of reduced shot noise in a quantum point contact
|
Kumar, A.
|
|
1996
|
227 |
1-4 |
p. 161-163
3 p.
|
artikel
|
| 53 |
Mechanism of commensurability oscillations in anisotropic antidot lattice
|
Tsukagoshi, K.
|
|
1996
|
227 |
1-4 |
p. 141-143
3 p.
|
artikel
|
| 54 |
Mesoscopic noise: Common sense view
|
Landauer, Rolf
|
|
1996
|
227 |
1-4 |
p. 156-160
5 p.
|
artikel
|
| 55 |
Mesoscopic transport properties of in-plane gate defined quantum wires
|
Pivin Jr., David P.
|
|
1996
|
227 |
1-4 |
p. 50-53
4 p.
|
artikel
|
| 56 |
Microwave modulation of Coulomb-blockade oscillations in a quantum dot
|
Fujii, K.
|
|
1996
|
227 |
1-4 |
p. 98-101
4 p.
|
artikel
|
| 57 |
Mobility enhanced 1DEG electron transport in side gated quantum wire structures
|
Wirner, C.
|
|
1996
|
227 |
1-4 |
p. 34-37
4 p.
|
artikel
|
| 58 |
Multiple quantum-dot infrared phototransistors
|
Ryzhii, V.
|
|
1996
|
227 |
1-4 |
p. 17-20
4 p.
|
artikel
|
| 59 |
Nanofabrication of GaInAsP/InP 2-dimensional photonic crystals by a methane-based reactive ion beam etching
|
Baba, Toshihiko
|
|
1996
|
227 |
1-4 |
p. 415-418
4 p.
|
artikel
|
| 60 |
Nanofabrication with a metal-covered scanning tunneling microscope tip
|
Andoh, Hiroki
|
|
1996
|
227 |
1-4 |
p. 276-278
3 p.
|
artikel
|
| 61 |
Noise and adiabatic dynamics of superconducting quantum point contacts
|
Averin, D.
|
|
1996
|
227 |
1-4 |
p. 241-244
4 p.
|
artikel
|
| 62 |
Nonequilibrium random telegraph switching in quantum point contacts
|
Smith, J.C.
|
|
1996
|
227 |
1-4 |
p. 197-201
5 p.
|
artikel
|
| 63 |
Nonlocal nature of the breakdown of the integer quantum Hall effects
|
Kawaguchi, Y.
|
|
1996
|
227 |
1-4 |
p. 183-185
3 p.
|
artikel
|
| 64 |
Observation of single electron effects using HEMT
|
Futatsugi, T.
|
|
1996
|
227 |
1-4 |
p. 109-111
3 p.
|
artikel
|
| 65 |
Observation of universal exponent in a high mobility two-dimensional electron system in the integer quantum Hall effect
|
Hwang, S.W.
|
|
1996
|
227 |
1-4 |
p. 180-182
3 p.
|
artikel
|
| 66 |
Opening address
|
Namba, Susumu
|
|
1996
|
227 |
1-4 |
p. viii-
1 p.
|
artikel
|
| 67 |
Optical properties of a quantum wire crystal, C5H10NH2PbI3
|
Nagami, A.
|
|
1996
|
227 |
1-4 |
p. 346-348
3 p.
|
artikel
|
| 68 |
Photoluminescence from point contact structure — Direct observation of electron flow
|
Nagamune, Yasushi
|
|
1996
|
227 |
1-4 |
p. 77-81
5 p.
|
artikel
|
| 69 |
Photon assisted transport through semiconductor quantum structures in intense terahertz electric fields
|
Allen, S.J.
|
|
1996
|
227 |
1-4 |
p. 367-372
6 p.
|
artikel
|
| 70 |
Physical properties of few electron mesoscopic rings: Persistent currents, optical absorption and Raman scattering
|
Wendler, L.
|
|
1996
|
227 |
1-4 |
p. 397-399
3 p.
|
artikel
|
| 71 |
Possibility of hot electron detection with a scanning probe microscope
|
Vázquez, F.
|
|
1996
|
227 |
1-4 |
p. 282-286
5 p.
|
artikel
|
| 72 |
Preface
|
Ando, Tsuneya
|
|
1996
|
227 |
1-4 |
p. vii-
1 p.
|
artikel
|
| 73 |
Quantitative analysis of elastic strains in GaAs/AlAs quantum dots
|
Darhuber, A.A.
|
|
1996
|
227 |
1-4 |
p. 11-16
6 p.
|
artikel
|
| 74 |
Quantized conductance in a mesoscopic Tomonaga-Luttinger liquid
|
Ogata, Masao
|
|
1996
|
227 |
1-4 |
p. 252-255
4 p.
|
artikel
|
| 75 |
Quantum effects in mesoscopic systems of metallic tunnel junctions
|
Mooij, J.E.
|
|
1996
|
227 |
1-4 |
p. 220-223
4 p.
|
artikel
|
| 76 |
Quantum Hall effect from finite-frequency studies
|
Engel, L.W.
|
|
1996
|
227 |
1-4 |
p. 173-179
7 p.
|
artikel
|
| 77 |
Quantum mechanical description of spontaneous emission in a microcavity in terms of admittance
|
Takahashi, Ichiro
|
|
1996
|
227 |
1-4 |
p. 407-410
4 p.
|
artikel
|
| 78 |
Quantum transport calculations for silicon inversion layers in MOS structures
|
Vasileska, D.
|
|
1996
|
227 |
1-4 |
p. 333-335
3 p.
|
artikel
|
| 79 |
Quantum transport in a Schottky in-plane-gate controlled GaAs/AlGaAs quantum well wires
|
Hashizume, T.
|
|
1996
|
227 |
1-4 |
p. 42-45
4 p.
|
artikel
|
| 80 |
Resonance of electronic states and indirect excitons in an assymetric triple quantum well structure
|
Sawaki, N.
|
|
1996
|
227 |
1-4 |
p. 384-386
3 p.
|
artikel
|
| 81 |
Room-temperature observation of multiple negative differential resistance in a metal (CoSi2)/insulator (CaF2) quantum interference transistor structure
|
Mori, K.
|
|
1996
|
227 |
1-4 |
p. 213-215
3 p.
|
artikel
|
| 82 |
Room temperature operated single electron transistor made by STM/AFM nano-oxidation process
|
Matsumoto, Kazuhiko
|
|
1996
|
227 |
1-4 |
p. 92-94
3 p.
|
artikel
|
| 83 |
Scattering reduction due to electron wave interference by periodic doping of impurity ions in semiconductors
|
Kikegawa, N.
|
|
1996
|
227 |
1-4 |
p. 57-60
4 p.
|
artikel
|
| 84 |
Self-consistent results in quantum wires in magnetic fields: Temperature effects
|
Suzuki, Tatsuo
|
|
1996
|
227 |
1-4 |
p. 46-49
4 p.
|
artikel
|
| 85 |
Single atom scale lithography for single electron devices
|
Ahmed, H.
|
|
1996
|
227 |
1-4 |
p. 259-263
5 p.
|
artikel
|
| 86 |
Single-electron transistors with quantum dots
|
Haug, R.J.
|
|
1996
|
227 |
1-4 |
p. 82-86
5 p.
|
artikel
|
| 87 |
Single-electron transport in nanostructure systems
|
Barker, J.R.
|
|
1996
|
227 |
1-4 |
p. 87-91
5 p.
|
artikel
|
| 88 |
Site control of metal dot structures on fluoride surface by electron beam exposure
|
Tsutsui, Kazuo
|
|
1996
|
227 |
1-4 |
p. 303-306
4 p.
|
artikel
|
| 89 |
Size-dependent luminescence of GaAs quantum wires on vicinal GaAs (110) surfaces with giant steps formed by MBE
|
Nakashima, Hisao
|
|
1996
|
227 |
1-4 |
p. 291-294
4 p.
|
artikel
|
| 90 |
Spatial and energy distributions of single-carrier traps in GaAs/Al x Ga1−x As heterostructures
|
Sakamoto, T.
|
|
1996
|
227 |
1-4 |
p. 74-76
3 p.
|
artikel
|
| 91 |
Spatially ununiform gain in MQW lasers caused by nonequilibrium carrier transport
|
Tsuchiya, H.
|
|
1996
|
227 |
1-4 |
p. 411-414
4 p.
|
artikel
|
| 92 |
Stark-ladder transition in a (GaAs)5/(AlAs)2 Zener tunneling diode
|
Nagasawa, H.
|
|
1996
|
227 |
1-4 |
p. 206-209
4 p.
|
artikel
|
| 93 |
Study of cyclotron resonance in very high magnetic fields and nonparabolic energy band in InGaAs/InAlAs quantum wells
|
Kotera, N.
|
|
1996
|
227 |
1-4 |
p. 349-351
3 p.
|
artikel
|
| 94 |
Subject index
|
|
|
1996
|
227 |
1-4 |
p. 427-428
2 p.
|
artikel
|
| 95 |
Superconducting phase tuned sample-specific conductance fluctuations
|
den Hartog, S.G.
|
|
1996
|
227 |
1-4 |
p. 229-231
3 p.
|
artikel
|
| 96 |
Supply-function dependent sequential resonant tunneling in semiconductor multiple quantum well diodes
|
Hirakawa, K.
|
|
1996
|
227 |
1-4 |
p. 202-205
4 p.
|
artikel
|
| 97 |
Suppression of current noise due to the Coulomb correlation
|
Yamaguchi, Fumiko
|
|
1996
|
227 |
1-4 |
p. 116-118
3 p.
|
artikel
|
| 98 |
Symposium Photograph
|
|
|
1996
|
227 |
1-4 |
p. vi-
1 p.
|
artikel
|
| 99 |
Temperature dependence of conductivity in multi-subband quantum wires
|
Kawabata, Arisato
|
|
1996
|
227 |
1-4 |
p. 249-251
3 p.
|
artikel
|
| 100 |
Temperature dependence of the bend resistance of composite fermions in narrow cross junctions
|
Herfort, J.
|
|
1996
|
227 |
1-4 |
p. 170-172
3 p.
|
artikel
|
| 101 |
Temperature-dependent magnetotransport properties for systems of few quantum wires
|
Ploner, G.
|
|
1996
|
227 |
1-4 |
p. 24-30
7 p.
|
artikel
|
| 102 |
Theoretical and experimental investigation of an electron interference device using multiatomic steps on vicinal GaAs surfaces
|
Motohisa, J.
|
|
1996
|
227 |
1-4 |
p. 295-298
4 p.
|
artikel
|
| 103 |
Theoretical base current in metal/insulator resonant tunneling transistors based on electron wave scattered by base port structure
|
Kohno, Y.
|
|
1996
|
227 |
1-4 |
p. 216-219
4 p.
|
artikel
|
| 104 |
Theory of tunneling conductance of CDW junctions
|
Tanaka, Yukio
|
|
1996
|
227 |
1-4 |
p. 339-341
3 p.
|
artikel
|
| 105 |
The role of atomic hydrogen for formation of quantum dots by self-organizing process in MBE
|
Chun, Yong Jin
|
|
1996
|
227 |
1-4 |
p. 299-302
4 p.
|
artikel
|
| 106 |
The use of electron beam exposure and chemically enhanced vapor etching of SiO2 for nanoscale fabrication
|
Kozicki, M.N.
|
|
1996
|
227 |
1-4 |
p. 318-322
5 p.
|
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Transition from chaotic to regular quantum scattering in mesoscopic billiards with nominally regular geometry
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Transport properties of superconducting SET transistor with a loop
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Tunneling and interference of electronic states in double quantum well
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Tunnelling and transfer between 1D and 2D electrons in adjusted quantum wells with thin barrier
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Two-dimensional electrons in modulated magnetic fields
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Undoped spacer layer effects on the evaluation of the coherent length in GaInAs/InP resonant tunneling diodes
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Validity of effective mass theory for energy levels in Si quantum wires
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