| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A photoluminescence study of the effects of hydrogen on deep levels in MBE grown GaAlAs:Si
|
Bosacchi, A.
|
|
1991
|
170 |
1-4 |
p. 540-544
5 p.
|
artikel
|
| 2 |
Boron doped a-SiCx:H films from B(C2H 5)3 SiH 4
|
Suchaneck, G.
|
|
1991
|
170 |
1-4 |
p. 574-576
3 p.
|
artikel
|
| 3 |
Defect generation during plasma treatment of semiconductors
|
Weber, J.
|
|
1991
|
170 |
1-4 |
p. 201-217
17 p.
|
artikel
|
| 4 |
Defects in H implanted GaAs studied by ion-beam and low-energy positron techniques
|
Keinonen, J.
|
|
1991
|
170 |
1-4 |
p. 235-239
5 p.
|
artikel
|
| 5 |
Deposition of amorphous hydrogenated semiconductors by magnetron assisted silane decomposition
|
Marakhonov, V.I.
|
|
1991
|
170 |
1-4 |
p. 571-573
3 p.
|
artikel
|
| 6 |
Dissociation effects of H and H+ 2 on clean III–V compounds
|
Proix, F.
|
|
1991
|
170 |
1-4 |
p. 457-468
12 p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
1991
|
170 |
1-4 |
p. IFC-
1 p.
|
artikel
|
| 8 |
Electrolytic hydrogenation of p-type silicon bulk and surface modifications
|
de Mierry, P.
|
|
1991
|
170 |
1-4 |
p. 124-128
5 p.
|
artikel
|
| 9 |
Electronic and structural properties of hydrogen on semiconductor surfaces
|
Schaefer, J.A.
|
|
1991
|
170 |
1-4 |
p. 45-68
24 p.
|
artikel
|
| 10 |
Electronic level of hydrogen and thermal stability of hydrogen related complexes in GaAs
|
Clerjaud, B.
|
|
1991
|
170 |
1-4 |
p. 417-420
4 p.
|
artikel
|
| 11 |
Electronic properties of hydrogen-related complexes in pure semiconductors
|
Haller, Eugene E.
|
|
1991
|
170 |
1-4 |
p. 351-360
10 p.
|
artikel
|
| 12 |
Electronic structure, dynamics, and metastability of muonium in semiconductors
|
Kiefl, R.F.
|
|
1991
|
170 |
1-4 |
p. 33-44
12 p.
|
artikel
|
| 13 |
Electron paramagnetic resonance of hydrogen in silicon
|
Gorelkinskii, Yu.V.
|
|
1991
|
170 |
1-4 |
p. 155-167
13 p.
|
artikel
|
| 14 |
Electroreflectance and photoluminescence measurement of passivation by hydrogenation in GaAs/AlGaAs structures
|
Yang, D.
|
|
1991
|
170 |
1-4 |
p. 557-560
4 p.
|
artikel
|
| 15 |
Evidence for intrinsic point defect generation during hydrogen-plasma treatment of silicon
|
Singh, Mandeep
|
|
1991
|
170 |
1-4 |
p. 218-222
5 p.
|
artikel
|
| 16 |
Evidence for molecular hydrogen in single crystal silicon
|
Meda, L.
|
|
1991
|
170 |
1-4 |
p. 259-264
6 p.
|
artikel
|
| 17 |
Existence and thermal stability of mono and dihydride phases on Si(1 1 1) and Ge(1 1 1) surfaces
|
Koulmann, J.J.
|
|
1991
|
170 |
1-4 |
p. 492-496
5 p.
|
artikel
|
| 18 |
First-principles calculations of hydrogen in bulk GaAs
|
Pavesi, L.
|
|
1991
|
170 |
1-4 |
p. 392-396
5 p.
|
artikel
|
| 19 |
HREELS investigation of the first stage of interaction of atomic hydrogen with GaAs(1 1 0) surfaces
|
del Pennino, U.
|
|
1991
|
170 |
1-4 |
p. 487-491
5 p.
|
artikel
|
| 20 |
Hydrogen action in the surface space charge region of highly doped silicon
|
Akremi, A.
|
|
1991
|
170 |
1-4 |
p. 503-506
4 p.
|
artikel
|
| 21 |
Hydrogen at semiconductor grain boundaries and interfaces
|
Aucouturier, M.
|
|
1991
|
170 |
1-4 |
p. 469-480
12 p.
|
artikel
|
| 22 |
Hydrogen chemisorption on cleavage faces of III–V compounds
|
Nannarone, S.
|
|
1991
|
170 |
1-4 |
p. 436-446
11 p.
|
artikel
|
| 23 |
Hydrogen complexes and their vibrations in undoped crystalline silicon
|
Deák, P.
|
|
1991
|
170 |
1-4 |
p. 253-258
6 p.
|
artikel
|
| 24 |
Hydrogen complexes in hydrogenated silicon
|
Jackson, W.B.
|
|
1991
|
170 |
1-4 |
p. 197-200
4 p.
|
artikel
|
| 25 |
Hydrogen diffusion and electronic metastability in amorphous silicon
|
Street, R.A.
|
|
1991
|
170 |
1-4 |
p. 69-81
13 p.
|
artikel
|
| 26 |
Hydrogen diffusion in crystalline semiconductors
|
Pearton, S.J.
|
|
1991
|
170 |
1-4 |
p. 85-97
13 p.
|
artikel
|
| 27 |
Hydrogen effusion: a probe for surface desorption and diffusion
|
Beyer, W.
|
|
1991
|
170 |
1-4 |
p. 105-114
10 p.
|
artikel
|
| 28 |
Hydrogen enhanced oxygen diffusion
|
Murray, R.
|
|
1991
|
170 |
1-4 |
p. 115-123
9 p.
|
artikel
|
| 29 |
Hydrogen evolution in amorphous silicon carbide
|
Demichelis, F.
|
|
1991
|
170 |
1-4 |
p. 149-152
4 p.
|
artikel
|
| 30 |
Hydrogen implantation in semiconductors
|
Tatarkiewicz, Jakub
|
|
1991
|
170 |
1-4 |
p. 188-196
9 p.
|
artikel
|
| 31 |
Hydrogen in crystalline and amorphous silicon
|
Buda, F.
|
|
1991
|
170 |
1-4 |
p. 98-104
7 p.
|
artikel
|
| 32 |
Hydrogen in crystalline semiconductors
|
Johnson, N.M.
|
|
1991
|
170 |
1-4 |
p. 3-20
18 p.
|
artikel
|
| 33 |
Hydrogen induced structure changes of GaAs(1 0 0) surfaces
|
Allinger, Th.
|
|
1991
|
170 |
1-4 |
p. 481-486
6 p.
|
artikel
|
| 34 |
Hydrogen in phosphorus- and carbon-doped crystalline silicon
|
Endrös, A.L.
|
|
1991
|
170 |
1-4 |
p. 365-370
6 p.
|
artikel
|
| 35 |
Hydrogen neutralization of dopant in p-type Ga0.47In0.53As
|
Theys, B.
|
|
1991
|
170 |
1-4 |
p. 421-425
5 p.
|
artikel
|
| 36 |
Hydrogen on semiconductor surfaces
|
Bertoni, C.M.
|
|
1991
|
170 |
1-4 |
p. 429-435
7 p.
|
artikel
|
| 37 |
Hydrogen passivation of vacancy-related centres in silicon
|
Mukashev, B.N.
|
|
1991
|
170 |
1-4 |
p. 545-549
5 p.
|
artikel
|
| 38 |
Hydrogen pile-up at interfaces between differently doped layers of amorphous silicon
|
Neitzert, H.C.
|
|
1991
|
170 |
1-4 |
p. 529-532
4 p.
|
artikel
|
| 39 |
Hydrogen plasma modification of metal/GaAs interface
|
Wang, Y.G.
|
|
1991
|
170 |
1-4 |
p. 513-517
5 p.
|
artikel
|
| 40 |
Hydrogen plasma treatment: desorption of atomic hydrogen from silicon surfaces studied by in-situ spectroscopic ellipsometry
|
Raynaud, P.
|
|
1991
|
170 |
1-4 |
p. 497-502
6 p.
|
artikel
|
| 41 |
Hydrogen related effects in a-Si:H studied by photothermal deflection spectroscopy
|
Serra, J.
|
|
1991
|
170 |
1-4 |
p. 269-272
4 p.
|
artikel
|
| 42 |
Incorporation of hydrogen in CdTe and HgTe epitaxial layers grown by MOCVD
|
Svob, L.
|
|
1991
|
170 |
1-4 |
p. 550-552
3 p.
|
artikel
|
| 43 |
Infrared analysis of hydrogen in GaP
|
Dischler, B.
|
|
1991
|
170 |
1-4 |
p. 245-248
4 p.
|
artikel
|
| 44 |
Infrared spectroscopy of hydrogen on silicon surfaces
|
Chabal, Y.J.
|
|
1991
|
170 |
1-4 |
p. 447-456
10 p.
|
artikel
|
| 45 |
In memory of Günther Harbeke
|
|
|
1991
|
170 |
1-4 |
p. x-xi
nvt p.
|
artikel
|
| 46 |
In situ study of the Si-H bond in a-Si:H ultrathin films
|
Blayo, N.
|
|
1991
|
170 |
1-4 |
p. 566-570
5 p.
|
artikel
|
| 47 |
Introduction
|
Chevallier, Jacques
|
|
1991
|
170 |
1-4 |
p. viii-ix
nvt p.
|
artikel
|
| 48 |
Investigation of cadmium-hydrogen complexes in silicon
|
Gebhard, M.
|
|
1991
|
170 |
1-4 |
p. 320-324
5 p.
|
artikel
|
| 49 |
Investigation of hydrogen in semiconductors by nuclear techniques
|
Deicher, M.
|
|
1991
|
170 |
1-4 |
p. 335-350
16 p.
|
artikel
|
| 50 |
Light-enhanced reactivation of passivated boron in hydrogen treated silicon
|
Zundel, T.
|
|
1991
|
170 |
1-4 |
p. 361-364
4 p.
|
artikel
|
| 51 |
List of contributors
|
|
|
1991
|
170 |
1-4 |
p. 577-578
2 p.
|
artikel
|
| 52 |
Localised vibrational modes of hydrogen-impurity complexes in GaAs
|
Briddon, P.R.
|
|
1991
|
170 |
1-4 |
p. 413-416
4 p.
|
artikel
|
| 53 |
Low energy ion-beam post hydrogenation of phosphor implanted amorphous silicon films
|
Galloni, R.
|
|
1991
|
170 |
1-4 |
p. 273-276
4 p.
|
artikel
|
| 54 |
Metastable states in Si:H
|
Jones, R.
|
|
1991
|
170 |
1-4 |
p. 181-187
7 p.
|
artikel
|
| 55 |
Modeling of hydrogen diffusion in p-type GaAs:Zn
|
Rahbi, R.
|
|
1991
|
170 |
1-4 |
p. 135-140
6 p.
|
artikel
|
| 56 |
Modulation and thermal stability of hydrogen in amorphous silicon
|
Vergnat, M.
|
|
1991
|
170 |
1-4 |
p. 141-145
5 p.
|
artikel
|
| 57 |
Nuclear magnetic resonance investigation of H, H2 and dopants in hydrogenated amorphous silicon and related materials
|
Boyce, J.B.
|
|
1991
|
170 |
1-4 |
p. 305-319
15 p.
|
artikel
|
| 58 |
On the modeling of hydrogen diffusion processes and complex formation in p-type crystalline silicon
|
Rizk, R.
|
|
1991
|
170 |
1-4 |
p. 129-134
6 p.
|
artikel
|
| 59 |
Optically detected nuclear magnetic resonance in amorphous silicon related materials
|
Kondo, M.
|
|
1991
|
170 |
1-4 |
p. 227-230
4 p.
|
artikel
|
| 60 |
Passivation of dislocations in silicon by hydrogenation
|
Perichaud, I.
|
|
1991
|
170 |
1-4 |
p. 553-556
4 p.
|
artikel
|
| 61 |
Picosecond spectroscopy of hydrogenated MBE-GaAs
|
Capizzi, M.
|
|
1991
|
170 |
1-4 |
p. 561-565
5 p.
|
artikel
|
| 62 |
Plasma-hydrogenated microwave and optoelectronic devices
|
Constant, Pr.E.
|
|
1991
|
170 |
1-4 |
p. 397-408
12 p.
|
artikel
|
| 63 |
Preface
|
Frova, A.
|
|
1991
|
170 |
1-4 |
p. vii-
1 p.
|
artikel
|
| 64 |
Reversible H2 passivation of ∗ Si ≡ Si 3 interface defects in (1 1 1)Si/SiO2
|
Stesmans, A.
|
|
1991
|
170 |
1-4 |
p. 507-512
6 p.
|
artikel
|
| 65 |
RF hydrogen plasma influence on shallow and deep levels in crystalline silicon
|
Szekeres, A.
|
|
1991
|
170 |
1-4 |
p. 231-234
4 p.
|
artikel
|
| 66 |
Role of hydrogen atoms in anodized porous silicon
|
Ito, T.
|
|
1991
|
170 |
1-4 |
p. 535-539
5 p.
|
artikel
|
| 67 |
Role of the hydrogen in the light-induced defects in undoped hydrogenated amorphous silicon
|
Labidi, H.
|
|
1991
|
170 |
1-4 |
p. 265-268
4 p.
|
artikel
|
| 68 |
Slow structural transitions of hydrogen in hydrogenated amorphous silicon during low temperature annealing
|
Asano, A.
|
|
1991
|
170 |
1-4 |
p. 277-280
4 p.
|
artikel
|
| 69 |
States of hydrogen in crystalline silicon
|
Stutzmann, M.
|
|
1991
|
170 |
1-4 |
p. 240-244
5 p.
|
artikel
|
| 70 |
Structural changes in a-Si:H during annealing
|
van den Boogaard, M.J.
|
|
1991
|
170 |
1-4 |
p. 281-284
4 p.
|
artikel
|
| 71 |
Structure and reorientation kinetics of hydrogen passivated shallow impurities in silicon from vibrational spectroscopy
|
Stavola, Michael
|
|
1991
|
170 |
1-4 |
p. 325-334
10 p.
|
artikel
|
| 72 |
Structure of the (1 1 1) hydrogen platelet in silicon
|
Deák, Peter
|
|
1991
|
170 |
1-4 |
p. 223-226
4 p.
|
artikel
|
| 73 |
Subject index
|
|
|
1991
|
170 |
1-4 |
p. 579-581
3 p.
|
artikel
|
| 74 |
Surface passivation of boron doped a-Si:H
|
Zongyan, Wu
|
|
1991
|
170 |
1-4 |
p. 523-528
6 p.
|
artikel
|
| 75 |
The chemisorption of hydrogen on silicon and silicon carbide (1 0 0) surfaces
|
Craig, B.I.
|
|
1991
|
170 |
1-4 |
p. 518-522
5 p.
|
artikel
|
| 76 |
The dispersive diffusion of hydrogen in undoped a—Si:H
|
Tang, X.-M.
|
|
1991
|
170 |
1-4 |
p. 146-148
3 p.
|
artikel
|
| 77 |
The effects of anharmonicity on the vibrations of hydrogen impurity pairs in gallium arsenide
|
Newman, R.C.
|
|
1991
|
170 |
1-4 |
p. 409-412
4 p.
|
artikel
|
| 78 |
The effects of hydrogen dose and thermal treatment on the formation of microsplits in hydrogen implanted GaAs
|
Neethling, J.H.
|
|
1991
|
170 |
1-4 |
p. 285-291
7 p.
|
artikel
|
| 79 |
Theoretical aspects of hydrogen in crystalline semiconductors
|
Van de Walle, Chris G.
|
|
1991
|
170 |
1-4 |
p. 21-32
12 p.
|
artikel
|
| 80 |
Theory of H sites in undoped crystalline semiconductors
|
Bonapasta, Aldo Amore
|
|
1991
|
170 |
1-4 |
p. 168-180
13 p.
|
artikel
|
| 81 |
Theory of hydrogen-impurity complexes in semiconductors
|
DeLeo, Gary G.
|
|
1991
|
170 |
1-4 |
p. 295-304
10 p.
|
artikel
|
| 82 |
The Si-H IR absorption bands in NTD FZ (H2) Si and their identification
|
Meng, X.T.
|
|
1991
|
170 |
1-4 |
p. 249-252
4 p.
|
artikel
|
| 83 |
Unintentional hydrogen incorporation in crystals
|
Clerjaud, B.
|
|
1991
|
170 |
1-4 |
p. 383-391
9 p.
|
artikel
|
| 84 |
Vibrational properties of hydrogen in compound semiconductors
|
Pajot, Bernard
|
|
1991
|
170 |
1-4 |
p. 371-382
12 p.
|
artikel
|
Tijdschrift beschrijving