no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Advanced diffusion system for low contamination in-line rapid thermal processing of silicon solar cells
|
Biro, D. |
|
2002 |
74 |
1-4 |
p. 35-41 7 p. |
article |
2 |
Advances in monocrystalline Si thin film solar cells by layer transfer
|
Bergmann, R.B |
|
2002 |
74 |
1-4 |
p. 213-218 6 p. |
article |
3 |
Analysis of light scattering in a-Si:H-based solar cells with rough interfaces
|
Krč, J. |
|
2002 |
74 |
1-4 |
p. 401-406 6 p. |
article |
4 |
Antireflection and surface passivation behaviour of SiO2/Si/SiO2 quantum wells on silicon
|
Cho, Eun-Chel |
|
2002 |
74 |
1-4 |
p. 147-154 8 p. |
article |
5 |
A numerical model of p–n junctions bordering on surfaces
|
Altermatt, Pietro P |
|
2002 |
74 |
1-4 |
p. 165-174 10 p. |
article |
6 |
A-Si:H buffer in a-SiGe:H solar cells
|
Lundszien, D |
|
2002 |
74 |
1-4 |
p. 365-372 8 p. |
article |
7 |
a-Si/mc-Si hybrid solar cell using silicon sheet substrate
|
Komatsu, Yuji |
|
2002 |
74 |
1-4 |
p. 513-518 6 p. |
article |
8 |
A simple process to remove boron from metallurgical grade silicon
|
Khattak, Chandra P |
|
2002 |
74 |
1-4 |
p. 77-89 13 p. |
article |
9 |
Back electrode formation for poly-Si thin film solar cells on glass having AIC-grown seeding layer
|
Widenborg, Per |
|
2002 |
74 |
1-4 |
p. 305-314 10 p. |
article |
10 |
Chemistry of the chlorine-terminated surface for low-temperature growth of crystal silicon films by RF plasma-enhanced chemical vapor deposition
|
Jung, Sughoan |
|
2002 |
74 |
1-4 |
p. 421-427 7 p. |
article |
11 |
Comparison of multicrystalline silicon surfaces after wet chemical etching and hydrogen plasma treatment: application to heterojunction solar cells
|
Ulyashin, Alexander |
|
2002 |
74 |
1-4 |
p. 195-201 7 p. |
article |
12 |
Crystalline silicon thin-film solar cells on ZrSiO4 ceramic substrates
|
Kieliba, T |
|
2002 |
74 |
1-4 |
p. 261-266 6 p. |
article |
13 |
Crystallographic analysis of high quality poly-Si thin films deposited by atmospheric pressure chemical vapor deposition
|
Ishikawa, Y |
|
2002 |
74 |
1-4 |
p. 255-260 6 p. |
article |
14 |
Dependence of the recombination in thin-film Si solar cells grown by ion-assisted deposition on the crystallographic orientation of the substrate
|
Neuhaus, D.H |
|
2002 |
74 |
1-4 |
p. 225-232 8 p. |
article |
15 |
Device simulation and modeling of microcrystalline silicon solar cells
|
Takakura, H. |
|
2002 |
74 |
1-4 |
p. 479-487 9 p. |
article |
16 |
Doping of a-SiC X :H films including μc-Si:H by hot-wire CVD and their application as a wide gap window for heterojunction solar cells
|
Itoh, T. |
|
2002 |
74 |
1-4 |
p. 379-385 7 p. |
article |
17 |
Effects of grain boundaries on cell performance of poly-silicon thin film solar cells by 2-D simulation
|
Fujisaki, Tomoya |
|
2002 |
74 |
1-4 |
p. 331-337 7 p. |
article |
18 |
Electrode distance dependence of photo-induced degradation in hydrogenated amorphous silicon
|
Miyahara, H. |
|
2002 |
74 |
1-4 |
p. 351-356 6 p. |
article |
19 |
Enhanced light-absorption and photo-sensitivity in amorphous silicon germanium/amorphous silicon multilayer
|
Jun, Kyung Hoon |
|
2002 |
74 |
1-4 |
p. 357-363 7 p. |
article |
20 |
Error diagnosis and optimisation of c-Si solar cell processing using contact resistances determined with the Corescanner
|
van der Heide, A.S.H |
|
2002 |
74 |
1-4 |
p. 43-50 8 p. |
article |
21 |
Fast deposition of microcrystalline silicon films with preferred (220) crystallographic texture using the high-density microwave plasma
|
Yoshino, Koichi |
|
2002 |
74 |
1-4 |
p. 505-511 7 p. |
article |
22 |
Fundamental understanding and implementation of Al-enhanced PECVD SiN x hydrogenation in silicon ribbons
|
Rohatgi, A |
|
2002 |
74 |
1-4 |
p. 117-126 10 p. |
article |
23 |
Growth of device grade μc-Si film at over 50Å/s using PECVD
|
Suzuki, S |
|
2002 |
74 |
1-4 |
p. 489-495 7 p. |
article |
24 |
Heterogeneous growth of microcrystalline silicon germanium
|
Rath, Jatindra K. |
|
2002 |
74 |
1-4 |
p. 553-560 8 p. |
article |
25 |
High-density inductively coupled plasma chemical vapor deposition of silicon nitride for solar cell application
|
Parm, I.O |
|
2002 |
74 |
1-4 |
p. 97-105 9 p. |
article |
26 |
High-efficiency μc-Si/c-Si heterojunction solar cells
|
Yamamoto, Hiroshi |
|
2002 |
74 |
1-4 |
p. 525-531 7 p. |
article |
27 |
High-efficiency low-cost integral screen-printing multicrystalline silicon solar cells
|
Szlufcik, J |
|
2002 |
74 |
1-4 |
p. 155-163 9 p. |
article |
28 |
High-efficiency OECO Czochralski-silicon solar cells for mass production
|
Hezel, Rudolf |
|
2002 |
74 |
1-4 |
p. 25-33 9 p. |
article |
29 |
High-temperature growth of thin film microcrystalline silicon on silicon carbide using EBEP-CVD
|
Boreland, Matt |
|
2002 |
74 |
1-4 |
p. 561-566 6 p. |
article |
30 |
IFC-Editorial Board
|
|
|
2002 |
74 |
1-4 |
p. IFC- 1 p. |
article |
31 |
Improvement of V oc using carbon added microcrystalline Si p-layer in microcrystalline Si solar cells
|
Wada, Takehito |
|
2002 |
74 |
1-4 |
p. 533-538 6 p. |
article |
32 |
Industrially attractive front contact formation methods for mechanically V-textured multicrystalline silicon solar cells
|
Spiegel, M |
|
2002 |
74 |
1-4 |
p. 175-182 8 p. |
article |
33 |
Industrial manufacturing of semitransparent crystalline silicon POWER solar cells
|
Fath, P |
|
2002 |
74 |
1-4 |
p. 127-131 5 p. |
article |
34 |
Influence of doping concentration on Ni-induced lateral crystallization of amorphous silicon films
|
Minagawa, Yasushi |
|
2002 |
74 |
1-4 |
p. 283-287 5 p. |
article |
35 |
Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon
|
Hahn, Giso |
|
2002 |
74 |
1-4 |
p. 57-63 7 p. |
article |
36 |
In situ chamber cleaning using atomic H in catalytic-CVD apparatus for mass production of a-Si:H solar cells
|
Masuda, Atsushi |
|
2002 |
74 |
1-4 |
p. 373-377 5 p. |
article |
37 |
Investigation of Cu metallization for Si solar cells
|
Kang, Jinmo |
|
2002 |
74 |
1-4 |
p. 91-96 6 p. |
article |
38 |
Large area multicrystalline silicon solar cells in high volume production environment—history, status, new processes, technology transfer issues
|
Narayanan, S |
|
2002 |
74 |
1-4 |
p. 107-115 9 p. |
article |
39 |
Large area thin film Si module
|
Yamamoto, Kenji |
|
2002 |
74 |
1-4 |
p. 449-455 7 p. |
article |
40 |
Low-cost multicrystalline back-contact silicon solar cells with screen printed metallization
|
Neu, W |
|
2002 |
74 |
1-4 |
p. 139-146 8 p. |
article |
41 |
Low-temperature crystallization of amorphous Si films using AlCl3 vapor
|
Ahn, Jin Hyung |
|
2002 |
74 |
1-4 |
p. 315-321 7 p. |
article |
42 |
Microcrystalline silicon and the impact on micromorph tandem solar cells
|
Meier, J |
|
2002 |
74 |
1-4 |
p. 457-467 11 p. |
article |
43 |
Microcrystalline silicon–germanium solar cells for multi-junction structures
|
Isomura, M |
|
2002 |
74 |
1-4 |
p. 519-524 6 p. |
article |
44 |
Microcrystalline silicon solar cells fabricated on polymer substrate
|
Mase, H |
|
2002 |
74 |
1-4 |
p. 547-552 6 p. |
article |
45 |
Microcrystalline silicon thin-film solar cells prepared at low temperature using PECVD
|
Nasuno, Y |
|
2002 |
74 |
1-4 |
p. 497-503 7 p. |
article |
46 |
New materials and deposition techniques for highly efficient silicon thin film solar cells
|
Rech, B |
|
2002 |
74 |
1-4 |
p. 439-447 9 p. |
article |
47 |
Ni/Cu metallization for low-cost high-efficiency PERC cells
|
Lee, E.J. |
|
2002 |
74 |
1-4 |
p. 65-70 6 p. |
article |
48 |
Optical confinement of the intermediate layer between Si and alumina substrate in thin film Si solar cells
|
Xu, Gang |
|
2002 |
74 |
1-4 |
p. 267-274 8 p. |
article |
49 |
Optical properties of silicon-based thin-film solar cells in substrate and superstrate configuration
|
Brammer, T |
|
2002 |
74 |
1-4 |
p. 469-478 10 p. |
article |
50 |
Optimization of layered laser crystallization for thin-film crystalline silicon solar cells
|
Sinh, Ngo Duong |
|
2002 |
74 |
1-4 |
p. 295-303 9 p. |
article |
51 |
Performance of double junction a-Si solar cells by using ZnO:Al films with different electrical and optical properties at the n/metal interface
|
Ray, Swati |
|
2002 |
74 |
1-4 |
p. 387-392 6 p. |
article |
52 |
Plasma deposition of thin film silicon: kinetics monitored by optical emission spectroscopy
|
Feitknecht, Luc |
|
2002 |
74 |
1-4 |
p. 539-545 7 p. |
article |
53 |
Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface
|
Kim, Hyeongnam |
|
2002 |
74 |
1-4 |
p. 323-329 7 p. |
article |
54 |
Promising window layer of thin film Si solar cell with p–i–n structure prepared by using SiH2Cl2
|
Nakashima, T |
|
2002 |
74 |
1-4 |
p. 429-437 9 p. |
article |
55 |
Promotion of microcrystallization by argon in moderately hydrogen diluted silane plasma
|
Jana, Madhusudan |
|
2002 |
74 |
1-4 |
p. 407-413 7 p. |
article |
56 |
Pulsed KrF excimer laser annealing of silicon solar cell
|
Azuma, H. |
|
2002 |
74 |
1-4 |
p. 289-294 6 p. |
article |
57 |
Quality evaluation and improvement of iron-doped electromagnetic multycrystalline silicon wafers
|
Dhamrin, M. |
|
2002 |
74 |
1-4 |
p. 203-211 9 p. |
article |
58 |
Rapid thermal technologies for high-efficiency silicon solar cells
|
Ebong, A. |
|
2002 |
74 |
1-4 |
p. 51-55 5 p. |
article |
59 |
Rie-texturing of multicrystalline silicon solar cells
|
Ruby, D.S |
|
2002 |
74 |
1-4 |
p. 133-137 5 p. |
article |
60 |
Selective emitter formation with a single screen-printed p-doped paste deposition using out-diffusion in an RTP-step
|
Debarge, L |
|
2002 |
74 |
1-4 |
p. 71-75 5 p. |
article |
61 |
Solar cells: past, present, future
|
Goetzberger, Adolf |
|
2002 |
74 |
1-4 |
p. 1-11 11 p. |
article |
62 |
Solar PV energy conversion and the 21st century’s civilization
|
Hamakawa, Yoshihiro |
|
2002 |
74 |
1-4 |
p. 13-23 11 p. |
article |
63 |
Spatial distribution of minority-carrier lifetime and local concentration of impurities in multicrystalline silicon solar cells
|
Kurobe, Ken-ichi |
|
2002 |
74 |
1-4 |
p. 183-193 11 p. |
article |
64 |
Structural and electrical properties of polycrystalline silicon films deposited by hot-wire CVD
|
Lee, Jeong Chul |
|
2002 |
74 |
1-4 |
p. 233-245 13 p. |
article |
65 |
Substrate temperature and hydrogen dilution: parameters for amorphous to microcrystalline phase transition in silicon thin films
|
Ray, Swati |
|
2002 |
74 |
1-4 |
p. 393-400 8 p. |
article |
66 |
Temperature dependence of absorption coefficient spectra for μc-Si films by resonant photothermal bending spectroscopy
|
Kunii, Toshie |
|
2002 |
74 |
1-4 |
p. 415-420 6 p. |
article |
67 |
Thin-film c-Si solar cells prepared by metal-induced crystallization
|
Muramatsu, Shin-Ichi |
|
2002 |
74 |
1-4 |
p. 275-281 7 p. |
article |
68 |
Thin film poly-Si solar cells using PECVD and Cat-CVD with light confinement structure by RIE
|
Niira, K |
|
2002 |
74 |
1-4 |
p. 247-253 7 p. |
article |
69 |
Thin film silicon solar cells on upgraded metallurgical silicon substrates prepared by liquid phase epitaxy
|
Peter, K |
|
2002 |
74 |
1-4 |
p. 219-223 5 p. |
article |
70 |
Toward stabilized 10% efficiency of large-area (>5000cm2) a-Si/a-SiGe tandem solar cells using high-rate deposition
|
Maruyama, Eiji |
|
2002 |
74 |
1-4 |
p. 339-349 11 p. |
article |