| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of impurity diffusion from tunnel diodes and optimization for operation in tandem cells
|
Kojima, Nobuaki
|
|
|
50 |
1-4 |
p. 237-242
|
artikel
|
| 2 |
Analysis of temperature and illumination dependencies of CIS cell performance
|
Nishitani, M
|
|
|
50 |
1-4 |
p. 63-70
|
artikel
|
| 3 |
Annealing effect of Cu2Te-Au contact to evaporated CdTe film on photovoltaic properties of CdS/CdTe solar cell
|
Uda, Hiroshi
|
|
|
50 |
1-4 |
p. 141-146
|
artikel
|
| 4 |
Author index to volume 50
|
|
|
|
50 |
1-4 |
p. 345-350
|
artikel
|
| 5 |
Characteristics of GaAs solar cells on Ge substrate with a preliminary grown thin layer of AlGaAs
|
Takahashi, Ken
|
|
|
50 |
1-4 |
p. 169-176
|
artikel
|
| 6 |
Characterization of Cu(InxGa1−x)2Se3.5 thin films prepared by rf sputtering
|
Tanaka, Tooru
|
|
|
50 |
1-4 |
p. 13-18
|
artikel
|
| 7 |
Chemical bath deposition of Cds buffer layer for GIGS solar cells
|
Hashimoto, Y.
|
|
|
50 |
1-4 |
p. 71-77
|
artikel
|
| 8 |
Composition control of electrodeposited Cu-In-Se layers for thin film CuInSe2 preparation
|
Nakamura, S.
|
|
|
50 |
1-4 |
p. 25-30
|
artikel
|
| 9 |
Crystal growth of CuGa x In1−x Se2 by horizontal bridgman method
|
Lam, W.W.
|
|
|
50 |
1-4 |
p. 111-117
|
artikel
|
| 10 |
Deep level transient spectroscopy on ZnO/CdS/CuGa x In1−x Se2 photovoltaic cells
|
Lam, W.W
|
|
|
50 |
1-4 |
p. 57-62
|
artikel
|
| 11 |
Defect reduction in electrochemically deposited CdS thin films by annealing in 02
|
Goto, Fumitaka
|
|
|
50 |
1-4 |
p. 147-153
|
artikel
|
| 12 |
Editorial Board
|
|
|
|
50 |
1-4 |
p. ii
|
artikel
|
| 13 |
Electrical properties of CuInSe2 films prepared by evaporation of Cu2Se and In2Se3 compounds
|
Park, Sung Chan
|
|
|
50 |
1-4 |
p. 43-49
|
artikel
|
| 14 |
Flight data from solar cell monitor on Engineering Test Satellite-VI and ground test data
|
Kawasaki, O.
|
|
|
50 |
1-4 |
p. 315-329
|
artikel
|
| 15 |
GaInP single junction and GaInP/GaAs two junction thin-film solar cell structures by epitaxial lift-off
|
Yazawa, Y.
|
|
|
50 |
1-4 |
p. 229-235
|
artikel
|
| 16 |
Growth and characterization of Cu(InA1)Se2 by vacuum evaporation
|
Itoh, F.
|
|
|
50 |
1-4 |
p. 119-125
|
artikel
|
| 17 |
Growth kinetics and structural characterization of polycrystalline CdTe films grown by hot-wall vacuum evaporation
|
Seto, S.
|
|
|
50 |
1-4 |
p. 133-139
|
artikel
|
| 18 |
Heteroepitaxial technologies on Si for high-efficiency solar cells
|
Umeno, Masayoshi
|
|
|
50 |
1-4 |
p. 203-212
|
artikel
|
| 19 |
High-efficiency silicon space solar cells
|
Suzuki, Akio
|
|
|
50 |
1-4 |
p. 289-303
|
artikel
|
| 20 |
Improvement of conversion efficiency by In0.52Al0.48 As window layers for p+n InP solar cells
|
Ueda, T.
|
|
|
50 |
1-4 |
p. 197-202
|
artikel
|
| 21 |
Improvement of life time of minority carriers in GaAs epi-layer grown on Ge substrate
|
Takahashi, Ken
|
|
|
50 |
1-4 |
p. 273-280
|
artikel
|
| 22 |
Influence of annealing temperature on the properties of Cu(In,Ga)Se2 thin films by thermal crystallization in Se vapor
|
Yamaguchi, Toshiyuki
|
|
|
50 |
1-4 |
p. 1-6
|
artikel
|
| 23 |
Material and structural parameter dependencies of photon recycling effects in conventional n+-p InP solar cell
|
Yamamoto, A.
|
|
|
50 |
1-4 |
p. 259-264
|
artikel
|
| 24 |
Mechanism for the anomalous degradation of Si solar cells induced by high-energy proton irradiation
|
Imaizumi, M.
|
|
|
50 |
1-4 |
p. 339-344
|
artikel
|
| 25 |
Numerical prediction of InGaAs/GaAs MQW solar cell characteristics under concentrated sunlight
|
Ohtsuka, H.
|
|
|
50 |
1-4 |
p. 251-257
|
artikel
|
| 26 |
Optimal growth procedure of GaInP/GaAs heterostructure for high-efficiency solar cells
|
Kitatani, T.
|
|
|
50 |
1-4 |
p. 221-227
|
artikel
|
| 27 |
Optimizing Gallium Arsenide multiple quantum wells as high-performance photovoltaic devices
|
Thilagam, A.
|
|
|
50 |
1-4 |
p. 243-249
|
artikel
|
| 28 |
Over 27% efficiency GaAs/InGaAs mechanically stacked solar cell
|
Matsubara, Hideki
|
|
|
50 |
1-4 |
p. 177-184
|
artikel
|
| 29 |
Performance and parameter analysis of tandem solar cells using measurements at multiple spectral conditions
|
Adelhelm, R.
|
|
|
50 |
1-4 |
p. 185-195
|
artikel
|
| 30 |
Photovoltaic properties of CdTe solar cells fabricated by close spaced sublimation with screen printed CdTe sources
|
Tae Ahn, Byung
|
|
|
50 |
1-4 |
p. 155-161
|
artikel
|
| 31 |
Preparation and properties of sprayed CuGa0.5In0.5Se2 thin films
|
Ramakrishna Reddy, K.T.
|
|
|
50 |
1-4 |
p. 19-24
|
artikel
|
| 32 |
Preparation of CuInSe2 thin films with large grain by excimer laser ablation
|
Yoshida, A.
|
|
|
50 |
1-4 |
p. 7-12
|
artikel
|
| 33 |
Preparation of Culn(S x Se1−x )2 thin films by sulfurization and selenization
|
Ohashi, T.
|
|
|
50 |
1-4 |
p. 37-42
|
artikel
|
| 34 |
Process damage free thin-film GaAs solar cells by epitaxial liftoff with GaInP window layer
|
Yazawa, Y.
|
|
|
50 |
1-4 |
p. 163-168
|
artikel
|
| 35 |
Quantum efficiency and admittance spectroscopy on Cu(In,Ga)Se2 solar cells
|
Parisi, J.
|
|
|
50 |
1-4 |
p. 79-85
|
artikel
|
| 36 |
Radiation degradation of large fluence irradiated space silicon solar cells
|
Hisamatsu, Tadashi
|
|
|
50 |
1-4 |
p. 331-338
|
artikel
|
| 37 |
Radiation response of InP/Si and InGaP/GaAs space solar cells
|
Walters, R.J.
|
|
|
50 |
1-4 |
p. 305-313
|
artikel
|
| 38 |
Selected back issues
|
|
|
|
50 |
1-4 |
p. 353-354
|
artikel
|
| 39 |
Stability of Cu(In,Ga)Se2 solar cells and evaluation by C–V characteristics
|
Kojima, Takeshi
|
|
|
50 |
1-4 |
p. 87-95
|
artikel
|
| 40 |
Study of one-step electrodeposition condition for preparation of Culn(Se, S)2 thin films
|
Kuranouchi, Shin'ichi
|
|
|
50 |
1-4 |
p. 31-36
|
artikel
|
| 41 |
Study on GaAs/GaAlAs MQW structure for photovoltaic applications
|
Manmontri, U.
|
|
|
50 |
1-4 |
p. 265-272
|
artikel
|
| 42 |
Subject index to volume 50
|
|
|
|
50 |
1-4 |
p. 351-352
|
artikel
|
| 43 |
Superstrate-type CuInSe2-based thin film solar cells by a low-temperature process using sodium compounds
|
Nakada, Tokio
|
|
|
50 |
1-4 |
p. 97-103
|
artikel
|
| 44 |
Temperature dependence of photoacoustic spectra in CuInSe2 thin films grown by molecular beam epitaxy
|
Yoshino, K.
|
|
|
50 |
1-4 |
p. 127-132
|
artikel
|
| 45 |
The application of quantum well solar cells to thermophotovoltaics
|
Griffin, Paul
|
|
|
50 |
1-4 |
p. 213-219
|
artikel
|
| 46 |
Thermal stability of GaAs tunnel junctions using carbon as a p-type dopant grown by metal-organic vapor phase epitaxy
|
Gotoh, Shu
|
|
|
50 |
1-4 |
p. 281-288
|
artikel
|
| 47 |
THM growth and characterization of CuGa x In1−x Se2 solid solutions
|
Miyake, Hideto
|
|
|
50 |
1-4 |
p. 51-56
|
artikel
|
| 48 |
XPS analysis of CdS/CuInSe2 heterojunctions
|
Okano, Yasunori
|
|
|
50 |
1-4 |
p. 105-110
|
artikel
|
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