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                             59 results found
no title author magazine year volume issue page(s) type
1 Amorphous silicon solar cell on textured tempered glass substrate prepared by sandblast process Taniguchi, H.
1997
49 1-4 p. 101-106
6 p.
article
2 Application of real-time spectroscopic ellipsometry for characterizing the structure and optical properties of microcrystalline component layers of amorphous semiconductor solar cells Koh, Joohyun
1997
49 1-4 p. 135-142
8 p.
article
3 Atomic scale characterization of a-Si : H/a-SiC : H interface structures Miyazaki, S.
1997
49 1-4 p. 45-51
7 p.
article
4 Author index to volume 49 1997
49 1-4 p. 431-439
9 p.
article
5 Changes of infrared absorption by light soaking and thermal quenching in a-Si : H Gotoh, Tamihiro
1997
49 1-4 p. 13-18
6 p.
article
6 Characterization of CuInS2 thin films prepared by sputtering from binary compounds Yamamoto, Y.
1997
49 1-4 p. 399-405
7 p.
article
7 Characterization of high-quality a-SiC : H films prepared by hydrogen-radical CVD method Andoh, N.
1997
49 1-4 p. 89-94
6 p.
article
8 Comparative study of defect states in light-soaked and high-temperature-annealed a-Si:H Kumeda, Minoru
1997
49 1-4 p. 75-80
6 p.
article
9 Controlled nucleation of thin microcrystalline layers for the recombination junction in a-Si stacked cells Pellaton Vaucher, N.
1997
49 1-4 p. 27-33
7 p.
article
10 Control of valence states by a codoping method in CuInS2 Yamamoto, Tetsuya
1997
49 1-4 p. 391-397
7 p.
article
11 CuInS2 thin-films solar cells fabricated by sulfurization of oxide precursors Negami, Takayuki
1997
49 1-4 p. 343-348
6 p.
article
12 Deposition of microcrystalline silicon by electron beam excited plasma Sasaki, Toshiaki
1997
49 1-4 p. 81-88
8 p.
article
13 Determination of charge carrier collecting regions in chalcopyrite heterojunction solar cells by electron-beam-induced current measurements Scheer, R.
1997
49 1-4 p. 299-309
11 p.
article
14 Development of high-efficiency a-Si solar cell submodule with a size of 30 cm × 40 cm Wakisaka, Kenichiro
1997
49 1-4 p. 121-125
5 p.
article
15 Development of tempered-glass substrates with TCO films for a-Si solar cells Fukawa, Makoto
1997
49 1-4 p. 107-112
6 p.
article
16 Editorial Board 1997
49 1-4 p. ii-
1 p.
article
17 Effective conversion efficiency enhancement of amorphous silicon modules by operation temperature elevation Kondo, M.
1997
49 1-4 p. 1-6
6 p.
article
18 Effects of annealing on CuInSe2 films grown by molecular beam epitaxy Niki, S.
1997
49 1-4 p. 319-326
8 p.
article
19 Effects of post-deposition treatment on the PL spectra and the hydrogen content of CuInS2 absorber layers Töpper, K.
1997
49 1-4 p. 383-390
8 p.
article
20 Electrical properties of Cl incorporated hydrogenated amorphous silicon Lee, Kyung Ha
1997
49 1-4 p. 61-67
7 p.
article
21 Electrical properties of coevaporated CuInS2 thin films Scheer, R.
1997
49 1-4 p. 423-430
8 p.
article
22 Epitaxial n-Si p-CuInS 2 heterojunction devices Metzner, H.
1997
49 1-4 p. 337-342
6 p.
article
23 Examination of blocking current-voltage behaviour through defect chalcopyrite layer in ZnO/CdS/Cu(In,Ga)Se2/Mo solar cell Topič, M.
1997
49 1-4 p. 311-317
7 p.
article
24 Experimental model and long-term prediction of photovoltaic conversion efficiency of a-Si solar cells Takahisa, Kiyoshi
1997
49 1-4 p. 179-186
8 p.
article
25 Fabrication of amorphous silicon p-i-n solar cells using ion shower doping technique Moon, Byeong Yeon
1997
49 1-4 p. 113-119
7 p.
article
26 Fabrication of graded band-gap Cu(InGa)Se2 thin-film mini-modules with a Zn(O,S,OH) x buffer layer Kushiya, Katsumi
1997
49 1-4 p. 277-283
7 p.
article
27 Growth of boron-doped ZnO thin films by atomic layer deposition Sang, Baosheng
1997
49 1-4 p. 19-26
8 p.
article
28 Growth of CuInS2 films by rf ion plating and their characterization Kondo, Ken-ichi
1997
49 1-4 p. 327-335
9 p.
article
29 15.1% Highly efficient thin film CdS CdTe solar cell Kumazawa, S.
1997
49 1-4 p. 205-212
8 p.
article
30 Improved compositional flexibility of Cu(In,Ga)Se2-based thin film solar cells by sodium control technique Nakada, Tokio
1997
49 1-4 p. 261-267
7 p.
article
31 Improved Cu(In,Ga)(S,Se)2 thin film solar cells by surface sulfurization Nakada, Tokio
1997
49 1-4 p. 285-290
6 p.
article
32 Improved junction formation procedure for low temperature deposited CdS CdTe solar cells Takamoto, T.
1997
49 1-4 p. 219-225
7 p.
article
33 Improved performance of Cu(InGa)Se2 thin-film solar cells using evaporated Cd-free buffer layers Ohtake, Yasutoshi
1997
49 1-4 p. 269-275
7 p.
article
34 Interfacial mixed-crystal layer in CdS CdTe heterostructure elucidated by electroreflectance spectroscopy Toyama, T.
1997
49 1-4 p. 213-218
6 p.
article
35 Issues on the chalcopyrite/defect-chalcopyrite junction model for high-efficiency Cu(In,Ga)Se2 solar cells Contreras, Miguel A.
1997
49 1-4 p. 239-247
9 p.
article
36 Large area ZnO films optimized for graded band-gap Cu(InGa)Se2-based thin-film mini-modules Cooray, Nawalage F.
1997
49 1-4 p. 291-297
7 p.
article
37 Light-induced changes in hydrogen-diluted a-Si : H materials and solar cells: A new perspective on self-consistent analysis Lee, Y.
1997
49 1-4 p. 149-156
8 p.
article
38 Low-cost amorphous silicon photovoltaic module encapsulated with liquid resin Kondo, M.
1997
49 1-4 p. 127-133
7 p.
article
39 Microcrystalline silicon films and tandem solar cells prepared by triode PECVD Liao, Xianbo
1997
49 1-4 p. 171-177
7 p.
article
40 Microstructural characterization of high-efficiency Cu(In,Ga)Se2 solar cells Wada, Takahiro
1997
49 1-4 p. 249-260
12 p.
article
41 More insights from CPM and PDS: Charged and neutral defects in a-Si:H Siebke, Frank
1997
49 1-4 p. 7-12
6 p.
article
42 Novel light-trapping schemes involving planar junctions and diffuse rear reflectors for thin-film silicon-based solar cells Winz, K.
1997
49 1-4 p. 195-203
9 p.
article
43 Optical confinement in high-efficiency a-Si solar cells with textured surfaces Hishikawa, Yoshihiro
1997
49 1-4 p. 143-148
6 p.
article
44 Optimal optical design of thin-film photovoltaic devices Zhu, Furong
1997
49 1-4 p. 163-169
7 p.
article
45 Over 10% efficient CuInS2 solar cell by sulfurization Nakabayashi, T.
1997
49 1-4 p. 375-381
7 p.
article
46 Photo atomic layer deposition of transparent conductive ZnO films Saito, Koki
1997
49 1-4 p. 187-193
7 p.
article
47 Photovoltaic characteristics of CuInS 2 CdS solar cell by electron beam evaporation Park, Gye-Choon
1997
49 1-4 p. 365-374
10 p.
article
48 Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of EB evaporated precursors Katagiri, Hironori
1997
49 1-4 p. 407-414
8 p.
article
49 Preparation of CuInS2 films with sufficient sulfur content and excellent morphology by one-step electrodeposition Nakamura, Sigeyuki
1997
49 1-4 p. 415-421
7 p.
article
50 Preparation of (n) a-Si: H/(p) c-Si heterojunction solar cells Borchert, D.
1997
49 1-4 p. 53-59
7 p.
article
51 Preparation of very stable and low hydrogen content amorphous silicon films by hydrogen-radical CVD method Tsuyuki, T.
1997
49 1-4 p. 95-100
6 p.
article
52 Properties of CuInS2 thin films grown by a two-step process without H2S Klenk, R.
1997
49 1-4 p. 349-356
8 p.
article
53 Prospects of wide-gap chalcopyrites for thin film photovoltaic modules Herberholz, R.
1997
49 1-4 p. 227-237
11 p.
article
54 Selected back issues 1997
49 1-4 p. 443-444
2 p.
article
55 Spectral characteristics of a-Si:H c-Si heterostructures Gall, S.
1997
49 1-4 p. 157-162
6 p.
article
56 Subject index to volume 49 1997
49 1-4 p. 441-442
2 p.
article
57 The influence of sodium on the properties of CuInS2 thin films and solar cells Watanabe, Takayuki
1997
49 1-4 p. 357-363
7 p.
article
58 Thermal equilibration and photocreation of neutral dangling bonds in a-Si: H caused by floating bonds Shimizu, Tatsuo
1997
49 1-4 p. 69-74
6 p.
article
59 Towards high-efficiency thin-film silicon solar cells with the “micromorph” concept Meier, J.
1997
49 1-4 p. 35-44
10 p.
article
                             59 results found
 
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