nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analysis of n-type IBC solar cells with diffused boron emitter locally blocked by implanted phosphorus
|
Müller, Ralph |
|
2015 |
142 |
C |
p. 54-59 6 p. |
artikel |
2 |
Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon
|
von Gastrow, Guillaume |
|
2015 |
142 |
C |
p. 29-33 5 p. |
artikel |
3 |
Carrier-diffusion corrected J 0-analysis of charge carrier lifetime measurements for increased consistency
|
Kimmerle, Achim |
|
2015 |
142 |
C |
p. 116-122 7 p. |
artikel |
4 |
Degradation of multicrystalline silicon solar cells and modules after illumination at elevated temperature
|
Kersten, Friederike |
|
2015 |
142 |
C |
p. 83-86 4 p. |
artikel |
5 |
Drift characteristics of mobile ions in SiN x films and solar cells
|
Wilson, Marshall |
|
2015 |
142 |
C |
p. 102-106 5 p. |
artikel |
6 |
Editorial
|
|
|
2015 |
142 |
C |
p. 1- 1 p. |
artikel |
7 |
Editorial Board
|
|
|
2015 |
142 |
C |
p. IFC- 1 p. |
artikel |
8 |
From simulation to experiment: Understanding BO-regeneration kinetics
|
Wilking, Svenja |
|
2015 |
142 |
C |
p. 87-91 5 p. |
artikel |
9 |
High-resolution structural investigation of passivated interfaces of silicon solar cells
|
Richter, Susanne |
|
2015 |
142 |
C |
p. 128-133 6 p. |
artikel |
10 |
Identification of the most relevant metal impurities in mc n-type silicon for solar cells
|
Schön, J. |
|
2015 |
142 |
C |
p. 107-115 9 p. |
artikel |
11 |
Impact of boron doping profiles on the specific contact resistance of screen printed Ag–Al contacts on silicon
|
Lohmüller, Elmar |
|
2015 |
142 |
C |
p. 2-11 10 p. |
artikel |
12 |
Ion implantation of boric molecules for silicon solar cells
|
Krügener, Jan |
|
2015 |
142 |
C |
p. 12-17 6 p. |
artikel |
13 |
Molybdenum and tungsten oxide: High work function wide band gap contact materials for hole selective contacts of silicon solar cells
|
Bivour, Martin |
|
2015 |
142 |
C |
p. 34-41 8 p. |
artikel |
14 |
Passivation of c-Si surfaces by ALD tantalum oxide capped with PECVD silicon nitride
|
Wan, Yimao |
|
2015 |
142 |
C |
p. 42-46 5 p. |
artikel |
15 |
PC1Dmod 6.1 – state-of-the-art models in a well-known interface for improved simulation of Si solar cells
|
Haug, Halvard |
|
2015 |
142 |
C |
p. 47-53 7 p. |
artikel |
16 |
Phosphorus-diffused polysilicon contacts for solar cells
|
Yan, Di |
|
2015 |
142 |
C |
p. 75-82 8 p. |
artikel |
17 |
Power loss prognosis from thermographic images of PID affected silicon solar modules
|
Kaden, Thomas |
|
2015 |
142 |
C |
p. 24-28 5 p. |
artikel |
18 |
Process simplifications in large area hybrid silicon heterojunction solar cells
|
Tous, Loic |
|
2015 |
142 |
C |
p. 66-74 9 p. |
artikel |
19 |
Progress in fine-line metallization by co-extrusion printing on cast monosilicon PERC solar cells
|
Richter, L. Philipp |
|
2015 |
142 |
C |
p. 18-23 6 p. |
artikel |
20 |
Rear side sphere gratings for improved light trapping in crystalline silicon single junction and silicon-based tandem solar cells
|
Eisenlohr, Johannes |
|
2015 |
142 |
C |
p. 60-65 6 p. |
artikel |
21 |
Towards an improved Laplacian-based photoluminescence image evaluation method
|
Breitenstein, Otwin |
|
2015 |
142 |
C |
p. 92-101 10 p. |
artikel |
22 |
Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers
|
Moldovan, Anamaria |
|
2015 |
142 |
C |
p. 123-127 5 p. |
artikel |