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                             95 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A 70-GHz-f T double-polysilicon SiGe HBT using a non selective epitaxial growth Baudry, H
 2002
 89 1-3 p. 21-25
5 p.
 artikel
2 Alloy and phonon scattering limited hole lifetimes in Si/SiGe heterostructures Ikonić, Z
 2002
 89 1-3 p. 84-87
4 p.
 artikel
3 Analysis of growth on 75 mm Si (100) wafers by molecular beam epitaxy using in vacuo scanning tunneling microscopy Jernigan, Glenn G
 2002
 89 1-3 p. 133-140
8 p.
 artikel
4 A novel atomic doping technology for ultra-shallow junction of SOI-MOSFETs Koh, K.W
 2002
 89 1-3 p. 435-438
4 p.
 artikel
5 Aspects of Ge/Si self-assembled quantum dots Boucaud, P
 2002
 89 1-3 p. 36-44
9 p.
 artikel
6 Author index 2002
 89 1-3 p. 449-451
3 p.
 artikel
7 Bandgap narrowing in strained SiGe on the basis of electrical measurements on Si/SiGe/Si hetero bipolar transistors Eberhardt, J
 2002
 89 1-3 p. 93-96
4 p.
 artikel
8 Characterization of low temperature epitaxial Si and Si1−y C y films grown by hot wire cell method Watahiki, Tatsuro
 2002
 89 1-3 p. 328-331
4 p.
 artikel
9 Critical island size of the SiC formation on Si(100) and Si(111) Scharmann, F.
 2002
 89 1-3 p. 201-204
4 p.
 artikel
10 Crystalline to amorphous phase transition in very low temperature molecular beam epitaxy Bauer, M
 2002
 89 1-3 p. 263-268
6 p.
 artikel
11 Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs Takagi, S
 2002
 89 1-3 p. 426-434
9 p.
 artikel
12 Dopant diffusion in SiGe: modeling stress and Ge chemical effects Pakfar, A
 2002
 89 1-3 p. 225-228
4 p.
 artikel
13 2D versus 3D competition at the early stages of growth for Ge on Si(001) by molecular dynamics Raiteri, P
 2002
 89 1-3 p. 157-159
3 p.
 artikel
14 Effect of annealing environment on antimony redistribution in pseudomorphic Si/SiGe/Si〈Sb〉 heterostructures Avrutin, V.S.
 2002
 89 1-3 p. 229-233
5 p.
 artikel
15 Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates Di Gaspare, L
 2002
 89 1-3 p. 346-349
4 p.
 artikel
16 Electronic structure of Ge/Si self-assembled quantum dots with different shapes Kim, J.Y.
 2002
 89 1-3 p. 176-179
4 p.
 artikel
17 Electronic transport properties of SiGe alloys and heterostructures grown by Sb assisted MBE Pinto, N
 2002
 89 1-3 p. 234-237
4 p.
 artikel
18 Epitaxial ErSi2−x on strained and relaxed Si1−x Ge x Travlos, A
 2002
 89 1-3 p. 382-385
4 p.
 artikel
19 Epitaxial growth kinetics in the presence of an Ehrlich–Schwoebel barrier: comparative analysis of different models Trofimov, Vladimir I.
 2002
 89 1-3 p. 420-425
6 p.
 artikel
20 Epitaxial growth of germanium dots on silicon (001) surface covered by a very thin dielectric layer Derivaz, M
 2002
 89 1-3 p. 191-195
5 p.
 artikel
21 Epitaxy of carbon-rich silicon with MBE Lavéant, P
 2002
 89 1-3 p. 241-245
5 p.
 artikel
22 Fabrication of a strained is on sub-10-nm-thick SiGe-on-insulator virtual substrate Tezuka, T
 2002
 89 1-3 p. 360-363
4 p.
 artikel
23 Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures Usami, N
 2002
 89 1-3 p. 364-367
4 p.
 artikel
24 Feasibility study of 25 V SiGe RF-power transistors for cellular base station output amplifiers Johansson, Ted
 2002
 89 1-3 p. 88-92
5 p.
 artikel
25 Formation of Ge quantum dots on boron-reconstructed surface/Si(111) Mori, H
 2002
 89 1-3 p. 188-190
3 p.
 artikel
26 Fourier-transform infrared investigations of Si1−y C y structures for hetero bipolar transistor applications Gruber, D
 2002
 89 1-3 p. 97-100
4 p.
 artikel
27 Growth and characterization of Ge islands on Si(110) Ferrandis, P
 2002
 89 1-3 p. 171-175
5 p.
 artikel
28 Growth and characterization of phosphorus doped Si1−y C y alloy grown by photo- and plasma-CVD at very low temperature Abe, Katsuya
 2002
 89 1-3 p. 303-305
3 p.
 artikel
29 Growth and electrical characterisation of highly doped p-SiGe/Si heterostructures Tsamakis, D
 2002
 89 1-3 p. 221-224
4 p.
 artikel
30 Growth mechanisms in thin film epitaxy of Si/SiGe from hydrides Zhang, J
 2002
 89 1-3 p. 399-405
7 p.
 artikel
31 Growth of relaxed Si1−x Ge x layers using an oxygen doped Si(O) compliant layer Haq, E
 2002
 89 1-3 p. 355-359
5 p.
 artikel
32 Growth studies of Ge-islands for enhanced performance of thin film solar cells Konle, J
 2002
 89 1-3 p. 160-165
6 p.
 artikel
33 High Ge content photodetectors on thin SiGe buffers Bauer, M
 2002
 89 1-3 p. 77-83
7 p.
 artikel
34 Influence of the growth parameters on self-assembled Ge islands on Si(100) Capellini, G
 2002
 89 1-3 p. 184-187
4 p.
 artikel
35 In situ RHEED monitoring of carbon incorporation during SiGeC/Si(001) growth in a UHV-CVD system LeThanh, V
 2002
 89 1-3 p. 246-251
6 p.
 artikel
36 Laser wavelength effect on the light emission properties of nanocrystalline Si on Si substrate fabricated by pulsed laser deposition Kim, Jong Hoon
 2002
 89 1-3 p. 70-72
3 p.
 artikel
37 Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors Schmidt, O.G
 2002
 89 1-3 p. 101-105
5 p.
 artikel
38 Lateral ordering of Ge islands on Si mesas made by selective epitaxial growth Vescan, L
 2002
 89 1-3 p. 49-53
5 p.
 artikel
39 Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation Paul, D.J
 2002
 89 1-3 p. 111-115
5 p.
 artikel
40 Low energy plasma enhanced chemical vapor deposition Kummer, M
 2002
 89 1-3 p. 288-295
8 p.
 artikel
41 Low-pressure chemical vapour deposition growth of epitaxial silicon selective to silicon nitride Lloyd, N.S
 2002
 89 1-3 p. 310-313
4 p.
 artikel
42 Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodes Dashiell, M.W
 2002
 89 1-3 p. 106-110
5 p.
 artikel
43 Low temperature epitaxial silicon films deposited by ion-assisted deposition Wagner, T.A
 2002
 89 1-3 p. 319-322
4 p.
 artikel
44 Low-temperature selective epitaxy of silicon with chlorinated chemistry by RTCVD Ribot, P
 2002
 89 1-3 p. 306-309
4 p.
 artikel
45 Low-temperature solid-phase crystallization of a-Si1−x Ge x on SiO2 by ion-beam stimulation Tsunoda, Isao
 2002
 89 1-3 p. 336-340
5 p.
 artikel
46 Low-temperature strain relaxation in ion-irradiated pseudomorphic SiGe/Si structures Avrutin, V.S
 2002
 89 1-3 p. 350-354
5 p.
 artikel
47 MBE grown short-period (Si m /Ge n ) N superlattices (SSLs) and its effect on the growth of uniform Si0.75Ge0.25/(SSLs)/Si(001) systems Rahman, M.M
 2002
 89 1-3 p. 252-256
5 p.
 artikel
48 MBE grown Si/SiGe undulating layer superlattices for infrared light detection Winnerl, S
 2002
 89 1-3 p. 73-76
4 p.
 artikel
49 MBE source for germanium–carbon co-evaporation Oehme, M
 2002
 89 1-3 p. 332-335
4 p.
 artikel
50 Non-destructive characterisation of doped Si and SiGe epilayers using FTIR spectroscopic ellipsometry (FTIR-SE) Pickering, C
 2002
 89 1-3 p. 146-150
5 p.
 artikel
51 n-type Si/SiGe resonant tunnelling diodes Paul, D.J
 2002
 89 1-3 p. 26-29
4 p.
 artikel
52 Nucleationless island formation in SiGe/Si(100) heteroepitaxy Sutter, P
 2002
 89 1-3 p. 45-48
4 p.
 artikel
53 On the origin of the kinetic growth instability of homoepitaxy on Si(001) Mysliveček, J.
 2002
 89 1-3 p. 410-414
5 p.
 artikel
54 Organization of self-assembled quantum dots in SiGe/Si multilayers: effect of strain and substrate curvature Sutter, E
 2002
 89 1-3 p. 196-200
5 p.
 artikel
55 Oscillation of in-plane lattices constant of Ge islands during molecular beam epitaxy growth on Si Nikiforov, A.I
 2002
 89 1-3 p. 180-183
4 p.
 artikel
56 Phonon assisted tunneling in gated p-i-n diodes Sedlmaier, S
 2002
 89 1-3 p. 116-119
4 p.
 artikel
57 Phosphorus profile control in low-temperature silicon epitaxy by reduced pressure chemical vapor deposition Suvar, E
 2002
 89 1-3 p. 314-318
5 p.
 artikel
58 Photoluminescence of boron-doped Si1−x Ge x epilayers grown by UHV-CVD Rowell, N.L
 2002
 89 1-3 p. 141-145
5 p.
 artikel
59 Preface Kasper, E
 2002
 89 1-3 p. 1-
1 p.
 artikel
60 Properties of SBT films crystallized by pulsed excimer (KrF) laser annealing Zhu, T.
 2002
 89 1-3 p. 390-393
4 p.
 artikel
61 Rapid thermal oxidation of epitaxial SiGe thin films Terrasi, A
 2002
 89 1-3 p. 269-273
5 p.
 artikel
62 Reverse temperature dependence of Sb sticking on Si(100) surfaces Nakagawa, K
 2002
 89 1-3 p. 238-240
3 p.
 artikel
63 Sb-surfactant mediated growth of Ge nanostructures Portavoce, A
 2002
 89 1-3 p. 205-210
6 p.
 artikel
64 Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys Hattab, A
 2002
 89 1-3 p. 284-287
4 p.
 artikel
65 Selective SiGe epitaxy by rtcvd for new device architectures Ribot, P
 2002
 89 1-3 p. 125-128
4 p.
 artikel
66 Si-based electroluminescence at THz frequencies Lynch, S.A
 2002
 89 1-3 p. 10-12
3 p.
 artikel
67 Si based optoelectronics for communications Masini, G
 2002
 89 1-3 p. 2-9
8 p.
 artikel
68 SiGe/Si multiquantum well structure for light modulation Cordat, Arnaud
 2002
 89 1-3 p. 66-69
4 p.
 artikel
69 SiGe technology bears fruits Berntgen, J
 2002
 89 1-3 p. 13-20
8 p.
 artikel
70 Silicon/silicon suboxide heterostructures grown by molecular beam epitaxy Sticht, A
 2002
 89 1-3 p. 274-278
5 p.
 artikel
71 Si/SiGe FETs grown by MBE on a LEPECVD grown virtual substrate Mack, T.
 2002
 89 1-3 p. 368-372
5 p.
 artikel
72 Si/SiGe quantum cascade structures emitting in the 10 μm range Dehlinger, G
 2002
 89 1-3 p. 30-35
6 p.
 artikel
73 Si1−x−y Ge xCy alloy growth by electron cyclotron resonance plasma-assisted Si molecular beam epitaxy Baribeau, J.-M
 2002
 89 1-3 p. 296-302
7 p.
 artikel
74 Size reduction of the Ge islands by utilizing the strain fields from the lower-temperature-grown hut-clusters buried in the Si matrix Takamiya, H
 2002
 89 1-3 p. 58-61
4 p.
 artikel
75 Step-bunching and strain-effects in Si1−x Ge x layers and Superlattices grown on vicinal Si(001) Mühlberger, M
 2002
 89 1-3 p. 257-262
6 p.
 artikel
76 STM studies of C60 on a Si(111):B surface phase Stimpel, T
 2002
 89 1-3 p. 394-398
5 p.
 artikel
77 Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands Novikov, A.V
 2002
 89 1-3 p. 62-65
4 p.
 artikel
78 Structural and electrical properties of MOCVD-cobalt silicide on p-Si0.83Ge0.17/Si(001) Shin, D.O.
 2002
 89 1-3 p. 279-283
5 p.
 artikel
79 Structural and optical properties of vertically correlated Ge island layers grown at low temperatures Herbst, M
 2002
 89 1-3 p. 54-57
4 p.
 artikel
80 Structural characterization of highly boron doped SiGe/Si heterostructures Woitok, J.F
 2002
 89 1-3 p. 216-220
5 p.
 artikel
81 Study of concentration variations in the metastable [CsCl]Fe1−x Si phase Falepin, A
 2002
 89 1-3 p. 386-389
4 p.
 artikel
82 Study on solid-phase reactions in Ti/p+-Si1−x−y Ge x C y/Si(100) contacts Tobioka, A
 2002
 89 1-3 p. 373-377
5 p.
 artikel
83 Subject index 2002
 89 1-3 p. 452-460
9 p.
 artikel
84 Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1−x Ge x CVD Yamashiro, Tadayoshi
 2002
 89 1-3 p. 120-124
5 p.
 artikel
85 Surface diffusion limited nucleation of Ge dots on the Si(001) surface Wu, Y.-H
 2002
 89 1-3 p. 151-156
6 p.
 artikel
86 Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing Sawano, K
 2002
 89 1-3 p. 406-409
4 p.
 artikel
87 Surface structure of Si(100) with submonolayer coverages of C Jemander, S.T
 2002
 89 1-3 p. 415-419
5 p.
 artikel
88 Thermal and chemical loading effects in non selective Si/SiGe epitaxy Fellous, C
 2002
 89 1-3 p. 323-327
5 p.
 artikel
89 Thermal stability of B in poly-SiGe on SiON Sadoh, T
 2002
 89 1-3 p. 129-132
4 p.
 artikel
90 Thermal stability of ultra-shallow junctions in silicon formed by molecular-beam epitaxy using boron delta doping Thompson, P.E
 2002
 89 1-3 p. 211-215
5 p.
 artikel
91 The vertical concept of power MOSFETs Tolksdorf, C
 2002
 89 1-3 p. 439-443
5 p.
 artikel
92 Thin SiGe buffers with high Ge content for n-MOSFETs Lyutovich, K
 2002
 89 1-3 p. 341-345
5 p.
 artikel
93 Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs Prest, M.J
 2002
 89 1-3 p. 444-448
5 p.
 artikel
94 Trenches around and between self assembled silicon/germanium islands grown on silicon substrates investigated by atomic force microscopy Denker, U
 2002
 89 1-3 p. 166-170
5 p.
 artikel
95 Use of ErSi2 in source/drain contacts of ultra-thin SOI MOSFETs Huda, M.Q
 2002
 89 1-3 p. 378-381
4 p.
 artikel
                             95 gevonden resultaten
 
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