| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new tool for measuring island dimensions and spatial correlations in quantum dot multilayers: Raman scattering interferences
|
Cazayous, M
|
|
2002
|
88 |
2-3 |
p. 173-176
4 p.
|
artikel
|
| 2 |
Anisotropic surface structure in ordered strained InGaP
|
Hasenöhrl, S
|
|
2002
|
88 |
2-3 |
p. 134-138
5 p.
|
artikel
|
| 3 |
Author Index of Volume 88
|
|
|
2002
|
88 |
2-3 |
p. 317-318
2 p.
|
artikel
|
| 4 |
Chaos-order transitions at corroding silicon surface
|
Parkhutik, V
|
|
2002
|
88 |
2-3 |
p. 269-276
8 p.
|
artikel
|
| 5 |
Controlling size distribution in silicon brush-like superstructures grown by self-organisation
|
Klimovskaya, A.I
|
|
2002
|
88 |
2-3 |
p. 298-301
4 p.
|
artikel
|
| 6 |
Control of morphological transitions during heteroepitaxial island growth by reflection high-energy electron diffraction
|
Cimalla, V
|
|
2002
|
88 |
2-3 |
p. 186-190
5 p.
|
artikel
|
| 7 |
Effect of strain and ordering on the band-gap energy of InGaP
|
Novák, J
|
|
2002
|
88 |
2-3 |
p. 139-142
4 p.
|
artikel
|
| 8 |
Electric field-induced redistribution of free carriers at isotype (In,Ga)P/GaAs interfaces
|
Krispin, P
|
|
2002
|
88 |
2-3 |
p. 129-133
5 p.
|
artikel
|
| 9 |
Electronic coupling of vertically coupled quantum dots: effect of the time-dependent magnetic field
|
Ben Salem, E
|
|
2002
|
88 |
2-3 |
p. 213-219
7 p.
|
artikel
|
| 10 |
Electronic structure of InAs self-assembled quantum dots
|
Schmidt, K.H.
|
|
2002
|
88 |
2-3 |
p. 238-242
5 p.
|
artikel
|
| 11 |
Evolution of the intermixing process in Ge/Si(111) self-assembled islands
|
Motta, N
|
|
2002
|
88 |
2-3 |
p. 264-268
5 p.
|
artikel
|
| 12 |
Growth and magnetic properties of (Ga,Mn)As as digital ferromagnetic heterostructures
|
Kawakami, R.K
|
|
2002
|
88 |
2-3 |
p. 209-212
4 p.
|
artikel
|
| 13 |
Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)
|
Reuter, D
|
|
2002
|
88 |
2-3 |
p. 230-233
4 p.
|
artikel
|
| 14 |
Interband transitions in [001]-(GaP)1(InP) m superlattices
|
Schubert, M
|
|
2002
|
88 |
2-3 |
p. 125-128
4 p.
|
artikel
|
| 15 |
Lasers with δ InAs layers in GaAs
|
Oswald, J
|
|
2002
|
88 |
2-3 |
p. 312-316
5 p.
|
artikel
|
| 16 |
Long-range interaction of self-assembled quantum dots via interface light
|
Ivanov, A.L
|
|
2002
|
88 |
2-3 |
p. 177-180
4 p.
|
artikel
|
| 17 |
Magneto-photoluminescence study of electronic transitions in InAs/GaAs quantum dot layers
|
Kuldová, K
|
|
2002
|
88 |
2-3 |
p. 247-251
5 p.
|
artikel
|
| 18 |
Morphological transformation of In y Ga1−y As islands, fabricated by Stranski–Krastanov growth
|
Lorke, A
|
|
2002
|
88 |
2-3 |
p. 225-229
5 p.
|
artikel
|
| 19 |
Optical and electrical spectroscopy of defects in low temperature grown GaAs
|
Steen, C
|
|
2002
|
88 |
2-3 |
p. 191-194
4 p.
|
artikel
|
| 20 |
Optical properties of InAs/Al y Ga1−y As/GaAs quantum dot structures
|
Altieri, P
|
|
2002
|
88 |
2-3 |
p. 234-237
4 p.
|
artikel
|
| 21 |
Optical properties of self-assembled lateral superlattices in AlInAs epitaxial layers and AlAs/InAs short-period superlattices
|
Francoeur, S
|
|
2002
|
88 |
2-3 |
p. 118-124
7 p.
|
artikel
|
| 22 |
Photoluminescence characterization of InAs/GaAs quantum dot bilayers
|
Le Ru, Eric C
|
|
2002
|
88 |
2-3 |
p. 164-167
4 p.
|
artikel
|
| 23 |
Polarization-sensitive opto-electronic devices based on spontaneous self-ordering in semiconductor alloys
|
Kiesel, Peter
|
|
2002
|
88 |
2-3 |
p. 307-311
5 p.
|
artikel
|
| 24 |
Redistribution of localised excitons in CdSe/ZnSe quantum dot structures
|
Strassburg, M
|
|
2002
|
88 |
2-3 |
p. 302-306
5 p.
|
artikel
|
| 25 |
Resonant quenching of photoluminescence in In x Ga1−x As/Al y Ga1−yAs/GaAs self assembled quantum dots
|
Altieri, P
|
|
2002
|
88 |
2-3 |
p. 252-254
3 p.
|
artikel
|
| 26 |
Role of the substrate imperfections on the island nucleation and defect formation: case of GaSb/GaAs(001)
|
Djafari Rouhani, M
|
|
2002
|
88 |
2-3 |
p. 181-185
5 p.
|
artikel
|
| 27 |
Scanning tunneling miscroscopy study of InAs islands grown on GaAs(001) substrates
|
Suekane, Osamu
|
|
2002
|
88 |
2-3 |
p. 158-163
6 p.
|
artikel
|
| 28 |
Self-assembled germanium nanocrystals on SiC{0001}
|
Schroeter, B
|
|
2002
|
88 |
2-3 |
p. 259-263
5 p.
|
artikel
|
| 29 |
Self-organised growth of silicon structures on silicon during oxide desorption
|
Palermo, V
|
|
2002
|
88 |
2-3 |
p. 220-224
5 p.
|
artikel
|
| 30 |
Self-organization in semiconductors—fundamentals and applications
|
Döhler, Gottfried H
|
|
2002
|
88 |
2-3 |
p. 111-
1 p.
|
artikel
|
| 31 |
Self-organization of packing defects and Anderson localization in A3B6—type layered crystals
|
Kyazym-zade, A.G.
|
|
2002
|
88 |
2-3 |
p. 282-285
4 p.
|
artikel
|
| 32 |
Self-organization processes in semiconductor under photo-induced Gunn effect
|
Gorley, P.M
|
|
2002
|
88 |
2-3 |
p. 286-291
6 p.
|
artikel
|
| 33 |
Self-organized ordering in self-assembled quantum dot superlattices
|
Springholz, G
|
|
2002
|
88 |
2-3 |
p. 143-152
10 p.
|
artikel
|
| 34 |
Self-organized quantum disks for a two-state system
|
Temmyo, J
|
|
2002
|
88 |
2-3 |
p. 153-157
5 p.
|
artikel
|
| 35 |
Self-organized technology of anisotropic etching of semiconductors for optoelectronics application
|
Dmitruk, N.L
|
|
2002
|
88 |
2-3 |
p. 277-281
5 p.
|
artikel
|
| 36 |
Simulations of the ripening of 3D, 2D and 1D objects
|
Bonafos, C
|
|
2002
|
88 |
2-3 |
p. 112-117
6 p.
|
artikel
|
| 37 |
Site-controlled self-organization of InAs quantum dots
|
Kohmoto, Shigeru
|
|
2002
|
88 |
2-3 |
p. 292-297
6 p.
|
artikel
|
| 38 |
Stacked layers of InAs self-assembled quantum dots
|
Khorenko, V
|
|
2002
|
88 |
2-3 |
p. 243-246
4 p.
|
artikel
|
| 39 |
STM topographic and barrier imaging of self-assembled InAs/GaAs dots
|
Selci, Stefano
|
|
2002
|
88 |
2-3 |
p. 168-172
5 p.
|
artikel
|
| 40 |
Subject Index of Volume 88
|
|
|
2002
|
88 |
2-3 |
p. 319-323
5 p.
|
artikel
|
| 41 |
Surface morphology of low temperature grown GaAs on singular and vicinal substrates
|
Apostolopoulos, G.
|
|
2002
|
88 |
2-3 |
p. 205-208
4 p.
|
artikel
|
| 42 |
Temperature and excitation dependence of the luminescence spectra of InAs quantum dots
|
Hjiri, M
|
|
2002
|
88 |
2-3 |
p. 255-258
4 p.
|
artikel
|
| 43 |
Two-dimensional organization of As clusters in GaAs
|
Chaldyshev, V.V
|
|
2002
|
88 |
2-3 |
p. 195-204
10 p.
|
artikel
|
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