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                             81 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Angular dispersion of polar phonons in a hexagonal GaN–AlN superlattice Gleize, J
 2001
 82 1-3 p. 27-29
3 p.
 artikel
2 Annealing behavior of Pd/GaN (0001) microstructure Kim, C.C.
 2001
 82 1-3 p. 105-107
3 p.
 artikel
3 Author index 2001
 82 1-3 p. 268-270
3 p.
 artikel
4 Characterisation of nitride thin films by electron backscattered diffraction Trager-Cowan, C
 2001
 82 1-3 p. 19-21
3 p.
 artikel
5 Characterization of GaN layers grown on porous silicon Missaoui, A
 2001
 82 1-3 p. 98-101
4 p.
 artikel
6 Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grown by molecular beam epitaxy Morel, Aurélien
 2001
 82 1-3 p. 173-177
5 p.
 artikel
7 Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy Muret, P
 2001
 82 1-3 p. 91-94
4 p.
 artikel
8 Deep levels introduced in n-GaN grown by the ELOG technique by high-energy electron irradiation Goodman, S.A
 2001
 82 1-3 p. 95-97
3 p.
 artikel
9 Defects in undoped and Mg-doped GaN and Al x Ga1−x N Meyer, B.K
 2001
 82 1-3 p. 77-81
5 p.
 artikel
10 Density-of-states distribution in AlGaN obtained from transient photocurrent analysis Niehus, M
 2001
 82 1-3 p. 206-208
3 p.
 artikel
11 Detailed deep trap analysis in Mg-doped p-type GaN layers grown by MOVPE Witte, H
 2001
 82 1-3 p. 85-87
3 p.
 artikel
12 Donor binding energies in group III-nitride-based quantum wells: influence of internal electric fields Morel, A
 2001
 82 1-3 p. 221-223
3 p.
 artikel
13 Effective carrier mass and mobility versus carrier concentration in p- and n-type α-GaN determined by infrared ellipsometry and Hall resistivity measurements Kasic, A
 2001
 82 1-3 p. 74-76
3 p.
 artikel
14 Electron and hole dynamics in GaN Ye, Hong
 2001
 82 1-3 p. 131-133
3 p.
 artikel
15 Electronic and vibrational properties of Mg- and O-related complexes in GaN Fall, C.J
 2001
 82 1-3 p. 88-90
3 p.
 artikel
16 Epitaxial growth of GaN thin films on sapphire (0001) by pulsed laser deposition: influence of surface preparation and nitridation Deiss, J.L
 2001
 82 1-3 p. 68-70
3 p.
 artikel
17 Etch end-point detection of GaN-based devices using optical emission spectroscopy Kim, H.S.
 2001
 82 1-3 p. 159-162
4 p.
 artikel
18 Evaluation of SiC as a substrate material for nitride materials heteroepitaxy Masri, P.
 2001
 82 1-3 p. 53-55
3 p.
 artikel
19 Femtosecond laser machining of gallium nitride Kim, T
 2001
 82 1-3 p. 262-264
3 p.
 artikel
20 Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg Kaminska, E
 2001
 82 1-3 p. 265-267
3 p.
 artikel
21 Gallium droplet formation during MOVPE and thermal annealing of GaN Karpov, S.Yu
 2001
 82 1-3 p. 22-24
3 p.
 artikel
22 GaN-based high-power laser diodes Miyajima, Takao
 2001
 82 1-3 p. 248-252
5 p.
 artikel
23 GaN electronics for high power, high temperature applications Pearton, S.J.
 2001
 82 1-3 p. 227-231
5 p.
 artikel
24 GaN layer structures with buried tungsten nitrides (WN x ) using epitaxial lateral overgrowth via MOVPE Hiramatsu, K
 2001
 82 1-3 p. 62-64
3 p.
 artikel
25 Growth and characterisation of self-assembled cubic GaN quantum dots Adelmann, C
 2001
 82 1-3 p. 212-214
3 p.
 artikel
26 Growth of c-GaN on Si(100) Nishimura, S
 2001
 82 1-3 p. 25-26
2 p.
 artikel
27 High etching rate of GaN films by KrF excimer laser Chu, Chen-Fu
 2001
 82 1-3 p. 42-44
3 p.
 artikel
28 High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN — based structures Grzegory, I
 2001
 82 1-3 p. 30-34
5 p.
 artikel
29 High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas Sung, Y.J.
 2001
 82 1-3 p. 50-52
3 p.
 artikel
30 HREM study of basal stacking faults in GaN layers grown over sapphire substrate Potin, V
 2001
 82 1-3 p. 114-116
3 p.
 artikel
31 Impact of MOCVD-GaN ‘templates’ on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN Valcheva, E
 2001
 82 1-3 p. 35-38
4 p.
 artikel
32 Improvement of diodes performance with a multiple-pair buffer layer by MOCVD Yang, Chien-Cheng
 2001
 82 1-3 p. 253-255
3 p.
 artikel
33 Improvement of electrical property and surface morphology of GaN grown by RF-plasma assisted molecular beam epitaxy by introduction of multiple AlN intermediate layer Kikuchi, A
 2001
 82 1-3 p. 12-15
4 p.
 artikel
34 Influence of the partial pressure of GaCl3 in the growth process of GaN by HVPE under nitrogen Aujol, E
 2001
 82 1-3 p. 65-67
3 p.
 artikel
35 InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum Damilano, B
 2001
 82 1-3 p. 224-226
3 p.
 artikel
36 Investigation of beryllium implanted P-type GaN Yu, Chang-Chin
 2001
 82 1-3 p. 82-84
3 p.
 artikel
37 MBE growth of different hexagonal GaN crystal structures on vicinal (100) GaAs substrates Georgakilas, A
 2001
 82 1-3 p. 16-18
3 p.
 artikel
38 Microstructure of GaN nucleation layer during initial stage MOCVD growth Kim, C.C.
 2001
 82 1-3 p. 108-110
3 p.
 artikel
39 Modelling of absorption and emission spectra of In x Ga1−x N layers grown by MBE Siozade, L
 2001
 82 1-3 p. 71-73
3 p.
 artikel
40 Molecular beam epitaxy growth and doping of III-nitrides on Si(111): layer morphology and doping efficiency Calleja, E
 2001
 82 1-3 p. 2-8
7 p.
 artikel
41 Multiple atomic configurations of the a edge threading dislocation in GaN Chen, J
 2001
 82 1-3 p. 117-119
3 p.
 artikel
42 New form of ordering in AlGaN Ruterana, P
 2001
 82 1-3 p. 203-205
3 p.
 artikel
43 Nonlinear spectroscopy of homoepitaxial GaN Schweitzer, C
 2001
 82 1-3 p. 156-158
3 p.
 artikel
44 Ohmic performance of ZnO and ITO/ZnO contacted with n-type GaN layer Tang, Bang-Tai
 2001
 82 1-3 p. 259-261
3 p.
 artikel
45 Optical properties of boron nitride thin films deposited by microwave PECVD Soltani, A
 2001
 82 1-3 p. 170-172
3 p.
 artikel
46 Optical properties of GaNAs/GaAs structures Buyanova, I.A
 2001
 82 1-3 p. 143-147
5 p.
 artikel
47 Optical properties of self-assembled InGaN/GaN quantum dots Taliercio, T
 2001
 82 1-3 p. 151-155
5 p.
 artikel
48 Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE Dalmasso, S
 2001
 82 1-3 p. 256-258
3 p.
 artikel
49 Organisers and sponsors 2001
 82 1-3 p. x-
1 p.
 artikel
50 p and n type doping of cubic GaN on SiC (001) Martinez-Guerrero, E
 2001
 82 1-3 p. 59-61
3 p.
 artikel
51 Patterned dielectric mirrors for lateral overgrowth of GaN-based lasers. Kim, Taek
 2001
 82 1-3 p. 245-247
3 p.
 artikel
52 Patterning of GaN by ion implantation-dependent etching Schiestel, S
 2001
 82 1-3 p. 111-113
3 p.
 artikel
53 Phonons and free carriers in strained hexagonal GaN/AlGaN superlattices measured by infrared ellipsometry and Raman spectroscopy Schubert, M
 2001
 82 1-3 p. 178-181
4 p.
 artikel
54 Photoconductance measurements and Stokes shift in InGaN alloys Reverchon, J.-L
 2001
 82 1-3 p. 197-199
3 p.
 artikel
55 Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers Schenk, H.P.D.
 2001
 82 1-3 p. 163-166
4 p.
 artikel
56 Photoluminescence of Ga-face AlGaN/GaN single heterostructures Martı́nez-Criado, G
 2001
 82 1-3 p. 200-202
3 p.
 artikel
57 Photoluminescence study of GaN grown by pulsed laser deposition in nitrogen atmosphere Mah, K.W
 2001
 82 1-3 p. 128-130
3 p.
 artikel
58 Photoreflectance investigations of GaN epitaxial layers Sitarek, P
 2001
 82 1-3 p. 209-211
3 p.
 artikel
59 Preface Hoffmann, Axel
 2001
 82 1-3 p. 1-
1 p.
 artikel
60 Processing-induced electron traps in n-type GaN Auret, F.D.
 2001
 82 1-3 p. 102-104
3 p.
 artikel
61 Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance Hai, P.N
 2001
 82 1-3 p. 218-220
3 p.
 artikel
62 Prospective investigations of orthorhombic ZnGeN2: synthesis, lattice dynamics and optical properties Viennois, R
 2001
 82 1-3 p. 45-49
5 p.
 artikel
63 Pump and probe spectroscopy of InGaN multi quantum well based laser diodes Kawakami, Y
 2001
 82 1-3 p. 188-193
6 p.
 artikel
64 Raman scattering study of gallium nitride heavily doped with manganese Gębicki, W
 2001
 82 1-3 p. 182-184
3 p.
 artikel
65 Renormalization of the exciton parameters in piezoelectric nitride quantum structures: the effects of injection intensity and temperature Bigenwald, P
 2001
 82 1-3 p. 185-187
3 p.
 artikel
66 Resonant Rayleigh scattering of exciton–polaritons in nitride-based multiple quantum wells Malpuech, Guillaume
 2001
 82 1-3 p. 134-136
3 p.
 artikel
67 Short-channel effects in AlGAN/GaN HEMTs Breitschädel, O
 2001
 82 1-3 p. 238-240
3 p.
 artikel
68 Size and shape effects in electromagnetic response of quantum dots and quantum dot arrays Maksimenko, S.A
 2001
 82 1-3 p. 215-217
3 p.
 artikel
69 Structural quality and ordering of MBE grown Al x Ga1−x N-layers Kirste, L
 2001
 82 1-3 p. 9-11
3 p.
 artikel
70 Subject index 2001
 82 1-3 p. 271-277
7 p.
 artikel
71 Surface morphology of GaN grown by molecular beam epitaxy Vézian, S
 2001
 82 1-3 p. 56-58
3 p.
 artikel
72 Synthesis and characterization of the bulk crystalline carbon–nitride phase synthesised by high-pressure technique Dymont, V.P
 2001
 82 1-3 p. 39-41
3 p.
 artikel
73 Synthesis, structure and optical properties of GaN nanocrystals prepared by sequential ion implantation in dielectrics Borsella, E
 2001
 82 1-3 p. 148-150
3 p.
 artikel
74 Temperature dependent electroluminescence in GaN and InGaN/GaN LEDs Lancefield, D
 2001
 82 1-3 p. 241-244
4 p.
 artikel
75 The atomic structure and properties of wurtzite GaN epitaxial layers Ruterana, P.
 2001
 82 1-3 p. 123-127
5 p.
 artikel
76 The dependence of the optical energies on InGaN composition O'Donnell, K.P
 2001
 82 1-3 p. 194-196
3 p.
 artikel
77 The preparation and characterisation of gallium nitride using the Hi-Prexx facility Russell, D.
 2001
 82 1-3 p. 120-122
3 p.
 artikel
78 Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant Pozina, G
 2001
 82 1-3 p. 137-139
3 p.
 artikel
79 Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells Gallart, M
 2001
 82 1-3 p. 140-142
3 p.
 artikel
80 Two-dimensional electron gas transport properties in AlGaN/GaN single- and double-heterostructure field effect transistors Maeda, Narihiko
 2001
 82 1-3 p. 232-237
6 p.
 artikel
81 Vertical motional narrowing of exciton-polaritons in GaN based quantum wells Malpuech, Guillaume
 2001
 82 1-3 p. 167-169
3 p.
 artikel
                             81 gevonden resultaten
 
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