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                             55 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium Vernon-Parry, K.D.
 2001
 81 1-3 p. 164-166
3 p.
 artikel
2 All-optical signal inverter derived from negative nonlinear absorption effect Yamada, Toshikazu
 2001
 81 1-3 p. 171-173
3 p.
 artikel
3 Annealing behavior of luminescence from erbium-implanted GaN films Zavada, J.M.
 2001
 81 1-3 p. 127-131
5 p.
 artikel
4 Author Index 2001
 81 1-3 p. 198-199
2 p.
 artikel
5 Broad-band and flashlamp pumping of 1.53 μm emission from erbium-doped silicon nanocrystals Kenyon, A.J.
 2001
 81 1-3 p. 19-22
4 p.
 artikel
6 Cathodoluminescence study of GaN doped with Tb Lozykowski, H.J.
 2001
 81 1-3 p. 140-143
4 p.
 artikel
7 Characterization and annealing of Eu-doped GaN Overberg, Mark
 2001
 81 1-3 p. 150-152
3 p.
 artikel
8 Confinement induced enhancement of the emission in Er-implanted Si/SiO2 quantum wells fabricated on SOI substrates Sotta, D.
 2001
 81 1-3 p. 43-45
3 p.
 artikel
9 Effect of carbon doping on GaN:Er Overberg, Mark
 2001
 81 1-3 p. 121-126
6 p.
 artikel
10 Effects of oxygen coimplantation on the formation of donor centers in erbium-implanted silicon Emtsev Jr, V.V.
 2001
 81 1-3 p. 74-76
3 p.
 artikel
11 Efficient electroluminescence from rare earth doped MOS diodes Wang, S.
 2001
 81 1-3 p. 102-104
3 p.
 artikel
12 Efficient 1.54 μm light emission from Si/SiGe/Si:Er:O transistors prepared by differential MBE Du, Chun-Xia
 2001
 81 1-3 p. 105-108
4 p.
 artikel
13 Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates Plaza, J.L.
 2001
 81 1-3 p. 157-160
4 p.
 artikel
14 Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 μm IR electroluminescence Chernyak, Leonid
 2001
 81 1-3 p. 113-115
3 p.
 artikel
15 Electron and hole impact excitation of Er in MBE grown Si:O and Si1−y C y diodes Markmann, M.
 2001
 81 1-3 p. 109-112
4 p.
 artikel
16 Electronic properties of Erbium doped amorphous silicon Kleider, J.P.
 2001
 81 1-3 p. 71-73
3 p.
 artikel
17 Erbium in Si-based light confining structures Lipson, M.
 2001
 81 1-3 p. 36-39
4 p.
 artikel
18 Excitation and non-radiative de-excitation processes in Er-doped Si nanocrystals Priolo, Francesco
 2001
 81 1-3 p. 9-15
7 p.
 artikel
19 Excitation of Er3+ ions in mixed amorphous-nanocrystalline GaN:Er films Aldabergenova, S.B.
 2001
 81 1-3 p. 144-146
3 p.
 artikel
20 Exciton–erbium energy transfer in Si nanocrystal-doped SiO2 Kik, P.G.
 2001
 81 1-3 p. 3-8
6 p.
 artikel
21 High resolution DLTS of hydrogen reactions with defects in erbium-implanted silicon Kan, P.Y.Y.
 2001
 81 1-3 p. 77-79
3 p.
 artikel
22 High temperature annealing of Er implanted GaN Alves, E.
 2001
 81 1-3 p. 132-135
4 p.
 artikel
23 Holmium-related luminescence in crystalline silicon Sobolev, N.A.
 2001
 81 1-3 p. 176-178
3 p.
 artikel
24 Infrared LEDs and microcavities based on erbium-doped silicon nanocomposites Lopez, H.A.
 2001
 81 1-3 p. 91-96
6 p.
 artikel
25 Investigation of energy exchange between silicon nanocrystals and Er3+ in silica Chryssou, C.E.
 2001
 81 1-3 p. 16-18
3 p.
 artikel
26 Luminescence properties of Er,O-codoped GaP grown by organometallic vapor phase epitaxy Fujiwara, Yasufumi
 2001
 81 1-3 p. 153-156
4 p.
 artikel
27 Magnetization and magnetic susceptibility of Gd based PbS Errebbahi, A.
 2001
 81 1-3 p. 194-197
4 p.
 artikel
28 Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures Yassievich, I.N.
 2001
 81 1-3 p. 182-184
3 p.
 artikel
29 Microscopic origin of Er3+ emission in mixed amorphous-nanocrystalline Si:H films Aldabergenova, S.B.
 2001
 81 1-3 p. 29-31
3 p.
 artikel
30 Mid-infrared induced quenching of photoluminescence in Si:Er Forcales, M.
 2001
 81 1-3 p. 80-82
3 p.
 artikel
31 Multiple color capability from rare earth-doped gallium nitride Steckl, A.J.
 2001
 81 1-3 p. 97-101
5 p.
 artikel
32 New laser crystals based on KPb2Cl5 for IR region Isaenko, L
 2001
 81 1-3 p. 188-190
3 p.
 artikel
33 Nonradiative processes involving rare-earth impurities in nanostructures Langer, Jerzy M
 2001
 81 1-3 p. 46-51
6 p.
 artikel
34 Optical bistability derived from the negative nonlinear absorption effect in erbium doped materials Maeda, Yoshinobu
 2001
 81 1-3 p. 174-175
2 p.
 artikel
35 Optical properties of Pr implanted GaN epilayers and Al x Ga1−x N alloys Ellis, C.J.
 2001
 81 1-3 p. 167-170
4 p.
 artikel
36 Optimisation of Er centers in Si for reverse biased light emitting diodes Jantsch, W.
 2001
 81 1-3 p. 86-90
5 p.
 artikel
37 Photoluminescence and X-ray absorption near edge structure of Eu ions doped SiO2 thin films Liu, F.
 2001
 81 1-3 p. 179-181
3 p.
 artikel
38 Photoluminescence from Si:Er under front and backside excitation Pawlak, B.J.
 2001
 81 1-3 p. 59-61
3 p.
 artikel
39 Photoluminescence of erbium doped microcrystalline silicon thin films produced by reactive magnetron sputtering Cerqueira, M.F.
 2001
 81 1-3 p. 32-35
4 p.
 artikel
40 Photoluminescence of ytterbium doped amorphous silicon and silicon carbide Terukov, E.I.
 2001
 81 1-3 p. 161-163
3 p.
 artikel
41 Range of ion-implanted rare earth elements in Si and SiO2 Palmetshofer, L.
 2001
 81 1-3 p. 83-85
3 p.
 artikel
42 Rare earth doped semiconductors III Zavada, John M.
 2001
 81 1-3 p. 1-2
2 p.
 artikel
43 Room-temperature photoluminescence from erbium-doped multilayer porous silicon microcavity Zhou, Y.
 2001
 81 1-3 p. 40-42
3 p.
 artikel
44 Room-temperature photoluminescence from Tb3+ ions in SiO2 and a-SiC:H thin films deposited by magnetron co-sputtering Sendova-Vassileva, M.
 2001
 81 1-3 p. 185-187
3 p.
 artikel
45 Sensitization of the 1.54 μm luminescence of Er3+ in SiO2 films by Yb and Si-nanocrystals Kozanecki, A.
 2001
 81 1-3 p. 23-28
6 p.
 artikel
46 Separation of dislocation- and erbium-related photoluminescence by time resolved studies Vernon–Parry, K.D.
 2001
 81 1-3 p. 56-58
3 p.
 artikel
47 Si:Er:O layers grown by molecular beam epitaxy: structural, electrical and optical properties Scalese, S.
 2001
 81 1-3 p. 62-66
5 p.
 artikel
48 Site selective excitation of Er-implanted GaN Przybylinska, H.
 2001
 81 1-3 p. 147-149
3 p.
 artikel
49 Spectroscopic studies of the visible and infrared luminescence from Er doped GaN Hömmerich, U.
 2001
 81 1-3 p. 116-120
5 p.
 artikel
50 Sponsors 2001
 81 1-3 p. viii-
1 p.
 artikel
51 Stimulated emission in erbium-doped silicon structures under optical pumping Bresler, M.S.
 2001
 81 1-3 p. 52-55
4 p.
 artikel
52 Subject Index 2001
 81 1-3 p. 200-204
5 p.
 artikel
53 Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN Kim, S.
 2001
 81 1-3 p. 136-139
4 p.
 artikel
54 Terbium photoluminescence in polysiloxane films Gaponenko, N.V.
 2001
 81 1-3 p. 191-193
3 p.
 artikel
55 Uniformly and selectively doped silicon:erbium structures produced by the sublimation MBE method Stepikhova, M.
 2001
 81 1-3 p. 67-70
4 p.
 artikel
                             55 gevonden resultaten
 
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