| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Aharonov–Bohm effect in GaAs/GaAlAs ring interferometers
|
Pedersen, S.
|
|
2000
|
74 |
1-3 |
p. 234-238
5 p.
|
artikel
|
| 2 |
Characterization and performance of MOCVD grown 0.14-μm InP-HEMTs for low voltage applications
|
Nawaz, M
|
|
2000
|
74 |
1-3 |
p. 137-142
6 p.
|
artikel
|
| 3 |
Characterization of quantum well structures using surface photovoltage spectroscopy
|
Ashkenasy, N
|
|
2000
|
74 |
1-3 |
p. 125-132
8 p.
|
artikel
|
| 4 |
Chemisorption of azafullerene on silicon: isolating C59N monomers
|
Butcher, M.J.
|
|
2000
|
74 |
1-3 |
p. 202-205
4 p.
|
artikel
|
| 5 |
Complete and absolute photonic bandgaps in highly symmetric photonic quasicrystals embedded in low refractive index materials
|
Zoorob, M.E
|
|
2000
|
74 |
1-3 |
p. 168-174
7 p.
|
artikel
|
| 6 |
Components for optoelectronic and photonic integrated circuits — design, modelling, manufacturing and monolithic integration on silicon
|
Cristea, D
|
|
2000
|
74 |
1-3 |
p. 89-95
7 p.
|
artikel
|
| 7 |
Coupled cavity DQW semiconductor lasers
|
Serpengüzel, A
|
|
2000
|
74 |
1-3 |
p. 80-83
4 p.
|
artikel
|
| 8 |
Device physics and state-of-the-art of quantum well infrared photodetectors and arrays
|
Tidrow, Meimei Z.
|
|
2000
|
74 |
1-3 |
p. 45-51
7 p.
|
artikel
|
| 9 |
3D island nucleation behaviour on high index substrates
|
Sanguinetti, S
|
|
2000
|
74 |
1-3 |
p. 239-241
3 p.
|
artikel
|
| 10 |
Dynamic latch-up in advanced LIGBT structures at high operating temperatures
|
Vellvehi, M
|
|
2000
|
74 |
1-3 |
p. 304-308
5 p.
|
artikel
|
| 11 |
Dynamics of SiO2/SiO x /Si multilayer growth and interfacial effects on silicon quantum well confinement properties
|
da Silva Jr, E.F
|
|
2000
|
74 |
1-3 |
p. 188-192
5 p.
|
artikel
|
| 12 |
Effects of low dimensions on junction parameters of MOS devices
|
de la Bardonnie, M
|
|
2000
|
74 |
1-3 |
p. 286-288
3 p.
|
artikel
|
| 13 |
Electron–hole pairs binding energies in quantum wires and quantum dots
|
Simões Baptista, A.
|
|
2000
|
74 |
1-3 |
p. 259-262
4 p.
|
artikel
|
| 14 |
Experimental investigation of photonic crystal waveguide devices and line-defect waveguide bends
|
Charlton, M.D.B
|
|
2000
|
74 |
1-3 |
p. 17-24
8 p.
|
artikel
|
| 15 |
Experimental investigation on the dielectric behavior of nanostructured rutile-phase titania
|
Ye, Xi-sheng
|
|
2000
|
74 |
1-3 |
p. 133-136
4 p.
|
artikel
|
| 16 |
Fabrication and characterization of an evanescent wave fiber optic sensor for air pollution control
|
Zaatar, Y
|
|
2000
|
74 |
1-3 |
p. 296-298
3 p.
|
artikel
|
| 17 |
Fabrication of a silicon based electroluminescent device
|
Malinin, A
|
|
2000
|
74 |
1-3 |
p. 32-35
4 p.
|
artikel
|
| 18 |
Field emission from amorphous diamond coated silicon tips
|
Huq, S.E
|
|
2000
|
74 |
1-3 |
p. 184-187
4 p.
|
artikel
|
| 19 |
Formation and device application of Er-doped nanocrystalline Si using laser ablation
|
Zhao, Xinwei
|
|
2000
|
74 |
1-3 |
p. 197-201
5 p.
|
artikel
|
| 20 |
Formation and ordering effects of C-induced Ge dots grown on Si (001) by molecular beam epitaxy
|
Leifeld, Oliver
|
|
2000
|
74 |
1-3 |
p. 222-228
7 p.
|
artikel
|
| 21 |
Formation and photoluminescence of Ge and Si nanoparticles encapsulated in oxide layers
|
Oku, Takeo
|
|
2000
|
74 |
1-3 |
p. 242-247
6 p.
|
artikel
|
| 22 |
GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors
|
Perera, A.G.U
|
|
2000
|
74 |
1-3 |
p. 56-60
5 p.
|
artikel
|
| 23 |
GaAs metal-semiconductor field effect transistor with InGaP/GaAs multiquantum barrier buffer layer
|
Lee, Ching-Ting
|
|
2000
|
74 |
1-3 |
p. 147-150
4 p.
|
artikel
|
| 24 |
High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 μm
|
Lane, B
|
|
2000
|
74 |
1-3 |
p. 52-55
4 p.
|
artikel
|
| 25 |
High-rate electron cyclotron resonance etching of GaAs via holes
|
Chen, Y.W.
|
|
2000
|
74 |
1-3 |
p. 282-285
4 p.
|
artikel
|
| 26 |
Hole-burning corrections in the stationary analysis of DFB laser diodes
|
Fernandes, C.Ferreira
|
|
2000
|
74 |
1-3 |
p. 75-79
5 p.
|
artikel
|
| 27 |
Index
|
|
|
2000
|
74 |
1-3 |
p. 309-310
2 p.
|
artikel
|
| 28 |
Index
|
|
|
2000
|
74 |
1-3 |
p. 311-316
6 p.
|
artikel
|
| 29 |
Influence of mask design on the growth of InGaAs/InAlAs quantum wells on patterned substrates
|
Racedo N, F
|
|
2000
|
74 |
1-3 |
p. 12-16
5 p.
|
artikel
|
| 30 |
Lasing from excited states in self-assembled InP/GaInP quantum islands
|
Porsche, J
|
|
2000
|
74 |
1-3 |
p. 263-268
6 p.
|
artikel
|
| 31 |
Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications
|
Razeghi, M
|
|
2000
|
74 |
1-3 |
p. 107-112
6 p.
|
artikel
|
| 32 |
Metallic microstructures by electroplating on polymers: an alternative to LIGA technique
|
Grigore, Luminita
|
|
2000
|
74 |
1-3 |
p. 299-303
5 p.
|
artikel
|
| 33 |
Molecular beam epitaxial growth of high performance In0.48Ga0.52P/In0.20Ga0.80As/GaAs p-HEMTs using a valved phosphorus cracker cell
|
Yoon, Soon F
|
|
2000
|
74 |
1-3 |
p. 151-157
7 p.
|
artikel
|
| 34 |
Multiply-charged ion beam induced dry etching of semiconductor materials
|
Meguro, T
|
|
2000
|
74 |
1-3 |
p. 40-44
5 p.
|
artikel
|
| 35 |
Novel functionalities by guiding electrons in highly uniform quantum wire ensembles on multiatomic step arrays of GaAs(331) substrates
|
Friedland, K.-J
|
|
2000
|
74 |
1-3 |
p. 180-183
4 p.
|
artikel
|
| 36 |
Optical characterisation of self organized InAs/GaAs quantum dots grown by MBE
|
Hjiri, M
|
|
2000
|
74 |
1-3 |
p. 253-258
6 p.
|
artikel
|
| 37 |
Optoelectronics-VLSI system integration
|
Desmulliez, Marc P.Y.
|
|
2000
|
74 |
1-3 |
p. 269-275
7 p.
|
artikel
|
| 38 |
Photocurrent spectroscopy of QW GRIN laser structures
|
Herrmann, K.H
|
|
2000
|
74 |
1-3 |
p. 61-65
5 p.
|
artikel
|
| 39 |
Potential applications of nanoscale semiconductor quantum devices for information and telecommunications technologies
|
Lee, El-Hang
|
|
2000
|
74 |
1-3 |
p. 1-6
6 p.
|
artikel
|
| 40 |
Potential for low dimensional structures in photovoltaics
|
Green, Martin A
|
|
2000
|
74 |
1-3 |
p. 118-124
7 p.
|
artikel
|
| 41 |
Preface
|
Henini, Mohamed
|
|
2000
|
74 |
1-3 |
p. IX-
1 p.
|
artikel
|
| 42 |
Preparation and characterisation of organic–inorganic heterojunction based on BDA-PPV/CdS nanocrystals
|
Leo, G
|
|
2000
|
74 |
1-3 |
p. 175-179
5 p.
|
artikel
|
| 43 |
Preparation of carbon nanofibers by hot filament-assisted sputtering
|
Matsumoto, Y
|
|
2000
|
74 |
1-3 |
p. 218-221
4 p.
|
artikel
|
| 44 |
Preparation of sharp gold tips for STM by using electrochemical etching method
|
Baykul, M.C
|
|
2000
|
74 |
1-3 |
p. 229-233
5 p.
|
artikel
|
| 45 |
Quantum well bandgap engineering for 1.5 μm telecom applications
|
Ramdane, A
|
|
2000
|
74 |
1-3 |
p. 66-69
4 p.
|
artikel
|
| 46 |
Reduced critical thickness and photoluminescence line splitting in multiple layers of self-assembled Ge/Si islands
|
Schmidt, O.G
|
|
2000
|
74 |
1-3 |
p. 248-252
5 p.
|
artikel
|
| 47 |
Resonant cavity light-emitting diodes at 660 and 880 nm
|
Vilokkinen, V
|
|
2000
|
74 |
1-3 |
p. 165-167
3 p.
|
artikel
|
| 48 |
Schottky contacts on wide bandgap InGaP grown with phosphorous cracker cells and their thermal reliability
|
Zhang, D.H
|
|
2000
|
74 |
1-3 |
p. 143-146
4 p.
|
artikel
|
| 49 |
Self-heating effects at CW operation of MQW long-wavelength lasers
|
Torres Pereira, J.M
|
|
2000
|
74 |
1-3 |
p. 84-88
5 p.
|
artikel
|
| 50 |
Silicon quantum point contact with aluminum gate
|
Prunnila, M
|
|
2000
|
74 |
1-3 |
p. 193-196
4 p.
|
artikel
|
| 51 |
Simulating Si multiple tunnel junctions from pinch-off to ohmic conductance
|
Müller, Heinz-Olaf
|
|
2000
|
74 |
1-3 |
p. 36-39
4 p.
|
artikel
|
| 52 |
Solving problems of low dimensional devices at the system level
|
Voss, Burkart
|
|
2000
|
74 |
1-3 |
p. 276-281
6 p.
|
artikel
|
| 53 |
SR-stimulated etching and OMVPE growth for semiconductor nanostructure fabrication
|
Nonogaki, Y
|
|
2000
|
74 |
1-3 |
p. 7-11
5 p.
|
artikel
|
| 54 |
Strained V-groove quantum wires in multidimensional microcavities
|
Constantin, C
|
|
2000
|
74 |
1-3 |
p. 158-164
7 p.
|
artikel
|
| 55 |
Synthesis, atomic structures and properties of carbon and boron nitride fullerene materials
|
Oku, Takeo
|
|
2000
|
74 |
1-3 |
p. 206-217
12 p.
|
artikel
|
| 56 |
Systematic growth studies of narrow constrictions formed by molecular beam epitaxy on prepatterned substrates
|
Lipinski, M.
|
|
2000
|
74 |
1-3 |
p. 25-31
7 p.
|
artikel
|
| 57 |
The evolution of group III nitride semiconductors
|
Akasaki, Isamu
|
|
2000
|
74 |
1-3 |
p. 101-106
6 p.
|
artikel
|
| 58 |
VCSEL structure hot electron light emitter
|
Balkan, N
|
|
2000
|
74 |
1-3 |
p. 96-100
5 p.
|
artikel
|
| 59 |
Virtual substrates for the n- and p-type Si-MODFET grown at very high rates
|
Rosenblad, C
|
|
2000
|
74 |
1-3 |
p. 113-117
5 p.
|
artikel
|
| 60 |
Void formation in titanium desilicide/p+ silicon interface: impact on junction leakage and silicide sheet resistance
|
Pey, K.L
|
|
2000
|
74 |
1-3 |
p. 289-295
7 p.
|
artikel
|
| 61 |
3.5 W continuous wave operation from quantum dot laser
|
Zhukov, A.E
|
|
2000
|
74 |
1-3 |
p. 70-74
5 p.
|
artikel
|
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