| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advances in silicon surface characterisation using light beam injection techniques
|
Acciarri, M
|
|
2000
|
73 |
1-3 |
p. 235-239
5 p.
|
artikel
|
| 2 |
Analysis of turbulent flow in silicon melts by optical temperature measurement
|
Gräbner, O
|
|
2000
|
73 |
1-3 |
p. 130-133
4 p.
|
artikel
|
| 3 |
A study of oxygen dislocation interactions in CZ-Si
|
Senkader, S.
|
|
2000
|
73 |
1-3 |
p. 111-115
5 p.
|
artikel
|
| 4 |
Characterisation of epitaxial layers on silicon by spectroscopic ellipsometry
|
Dittmar, Georg
|
|
2000
|
73 |
1-3 |
p. 255-259
5 p.
|
artikel
|
| 5 |
Characterization of Si wafers by μ-PCD with surface electric field
|
Ichimura, M
|
|
2000
|
73 |
1-3 |
p. 230-234
5 p.
|
artikel
|
| 6 |
Characterization of the oxygen distribution in Czochralski silicon using hydrogen-enhanced thermal donor formation
|
Ulyashin, A.G.
|
|
2000
|
73 |
1-3 |
p. 124-129
6 p.
|
artikel
|
| 7 |
Chemically induced disordering of Si (100) surfaces upon SC1/SC2 etching analysed by high-resolution transmission electron microscopy
|
Bollani, M
|
|
2000
|
73 |
1-3 |
p. 154-157
4 p.
|
artikel
|
| 8 |
Cross-sectional TEM investigations of the influence of P+ ions implanted in the Si substrate on the atomic interdiffusion in the Cr–Si system
|
Mirouh, K
|
|
2000
|
73 |
1-3 |
p. 116-119
4 p.
|
artikel
|
| 9 |
Crystal-related defects evolution during thin epitaxial layer growth on silicon wafers
|
Borionetti, G
|
|
2000
|
73 |
1-3 |
p. 218-223
6 p.
|
artikel
|
| 10 |
Denuded zone formation by conventional and rapid thermal anneals
|
Kissinger, G
|
|
2000
|
73 |
1-3 |
p. 106-110
5 p.
|
artikel
|
| 11 |
Editorial
|
|
|
2000
|
73 |
1-3 |
p. X-
1 p.
|
artikel
|
| 12 |
Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen
|
Misiuk, A
|
|
2000
|
73 |
1-3 |
p. 134-138
5 p.
|
artikel
|
| 13 |
Effect of surface topology of amorphous substrates on the growth mechanism and grain size of APCVD grown silicon for solar cells
|
Kautzsch, T
|
|
2000
|
73 |
1-3 |
p. 208-211
4 p.
|
artikel
|
| 14 |
Electronic device fabrication by simple hydrogen enhanced thermal donor formation processes in p-type Cz-silicon
|
Job, R
|
|
2000
|
73 |
1-3 |
p. 197-202
6 p.
|
artikel
|
| 15 |
Ellipsometry and microscopy study of nanocrystalline Si:H layers formed by high dose implantation of silicon
|
Popov, V.P
|
|
2000
|
73 |
1-3 |
p. 120-123
4 p.
|
artikel
|
| 16 |
EPR study of He-implanted Si
|
Pivac, B
|
|
2000
|
73 |
1-3 |
p. 60-63
4 p.
|
artikel
|
| 17 |
Final evidence for H termination of HF-treated Si surfaces: a comparative study by high-energy and vibrational spectroscopies
|
Bollani, M
|
|
2000
|
73 |
1-3 |
p. 240-243
4 p.
|
artikel
|
| 18 |
Formation of voids and oxide particles in silicon crystals
|
Voronkov, V.V.
|
|
2000
|
73 |
1-3 |
p. 69-76
8 p.
|
artikel
|
| 19 |
Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni
|
Hoelzl, R
|
|
2000
|
73 |
1-3 |
p. 95-98
4 p.
|
artikel
|
| 20 |
Helium desorption from cavities induced by high energy 3He and 4He implantation in silicon
|
Godey, S.
|
|
2000
|
73 |
1-3 |
p. 54-59
6 p.
|
artikel
|
| 21 |
Historical overview of silicon crystal pulling development
|
Zulehner, Werner
|
|
2000
|
73 |
1-3 |
p. 7-15
9 p.
|
artikel
|
| 22 |
Index
|
|
|
2000
|
73 |
1-3 |
p. 263-267
5 p.
|
artikel
|
| 23 |
Index
|
|
|
2000
|
73 |
1-3 |
p. 261-262
2 p.
|
artikel
|
| 24 |
Influence of Czochralski silicon crystal growth on wafer quality: an extensive investigation using traditional and new characterization techniques
|
Porrini, M
|
|
2000
|
73 |
1-3 |
p. 139-144
6 p.
|
artikel
|
| 25 |
Influence of different growth and nucleation times on optical spectra of precipitated oxygen in silicon
|
Borghesi, A
|
|
2000
|
73 |
1-3 |
p. 149-153
5 p.
|
artikel
|
| 26 |
Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen
|
Borghesi, A
|
|
2000
|
73 |
1-3 |
p. 145-148
4 p.
|
artikel
|
| 27 |
Large-grained polycrystalline Si films obtained by selective nucleation and solid phase epitaxy
|
Puglisi, R.A
|
|
2000
|
73 |
1-3 |
p. 212-217
6 p.
|
artikel
|
| 28 |
Low temperature Si epitaxy in a vertical LPCVD batch reactor
|
Ritter, G
|
|
2000
|
73 |
1-3 |
p. 203-207
5 p.
|
artikel
|
| 29 |
MBE growth kinetics of Si on heavily-doped Si(111):P: a self-surfactant effect
|
Fissel, A
|
|
2000
|
73 |
1-3 |
p. 163-167
5 p.
|
artikel
|
| 30 |
Micro-Raman study of stress distribution generated in silicon during proximity rapid thermal diffusion
|
Nolan, M
|
|
2000
|
73 |
1-3 |
p. 168-172
5 p.
|
artikel
|
| 31 |
Minority carrier lifetime of p-type silicon containing oxygen precipitates: influence of injection level and precipitate size/density
|
Porrini, M
|
|
2000
|
73 |
1-3 |
p. 244-249
6 p.
|
artikel
|
| 32 |
New developments in silicon Czochralski crystal growth and wafer technology
|
Mozer, Albrecht P
|
|
2000
|
73 |
1-3 |
p. 36-41
6 p.
|
artikel
|
| 33 |
Numerical simulation for silicon crystal growth of up to 400 mm diameter in Czochralski furnaces
|
Takano, K
|
|
2000
|
73 |
1-3 |
p. 30-35
6 p.
|
artikel
|
| 34 |
Optical absorption of precipitated oxygen in silicon at liquid helium temperature
|
Sassella, A
|
|
2000
|
73 |
1-3 |
p. 224-229
6 p.
|
artikel
|
| 35 |
Oxygen-related defects in the top silicon layer of SIMOX; the effect of thermal treatments
|
Rivera, A
|
|
2000
|
73 |
1-3 |
p. 77-81
5 p.
|
artikel
|
| 36 |
Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered Si structures
|
Gaubas, E
|
|
2000
|
73 |
1-3 |
p. 1-6
6 p.
|
artikel
|
| 37 |
Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology
|
Popov, V.P
|
|
2000
|
73 |
1-3 |
p. 82-86
5 p.
|
artikel
|
| 38 |
Quantitative TOF-SIMS analysis of metal contamination on silicon wafers
|
Zanderigo, F
|
|
2000
|
73 |
1-3 |
p. 173-177
5 p.
|
artikel
|
| 39 |
Silicon substrate effects on the current–voltage characteristics of advanced p–n junction diodes
|
Poyai, A
|
|
2000
|
73 |
1-3 |
p. 191-196
6 p.
|
artikel
|
| 40 |
Substrate defects affecting gate oxide integrity
|
Itsumi, Manabu
|
|
2000
|
73 |
1-3 |
p. 184-190
7 p.
|
artikel
|
| 41 |
TEM characterisation of high pressure–high-temperature-treated Czochralski silicon samples
|
Romano-Rodrı́guez, A
|
|
2000
|
73 |
1-3 |
p. 250-254
5 p.
|
artikel
|
| 42 |
The engineering of intrinsic point defects in silicon wafers and crystals
|
Falster, R
|
|
2000
|
73 |
1-3 |
p. 87-94
8 p.
|
artikel
|
| 43 |
The formation mechanism of grown-in defects in CZ silicon crystals based on thermal gradients measured by thermocouples near growth interfaces
|
Abe, Takao
|
|
2000
|
73 |
1-3 |
p. 16-29
14 p.
|
artikel
|
| 44 |
The hydrogen gettering at post-implantation hydrogen plasma treatments of helium- and hydrogen implanted Czochralski silicon
|
Ulyashin, A.G
|
|
2000
|
73 |
1-3 |
p. 64-68
5 p.
|
artikel
|
| 45 |
Thermal history simulation of Czochralski silicon crystals and its application to the study of defects formation during crystal growth
|
Hopfgartner, P
|
|
2000
|
73 |
1-3 |
p. 158-162
5 p.
|
artikel
|
| 46 |
Thin oxide reliability and gettering efficiency in advanced silicon substrates
|
Polignano, M.L
|
|
2000
|
73 |
1-3 |
p. 99-105
7 p.
|
artikel
|
| 47 |
Ultra thin silicon films directly bonded onto silicon wafers
|
Fournel, F
|
|
2000
|
73 |
1-3 |
p. 42-46
5 p.
|
artikel
|
| 48 |
Voids in silicon substrates for novel applications
|
Raineri, Vito
|
|
2000
|
73 |
1-3 |
p. 47-53
7 p.
|
artikel
|
| 49 |
Wet-chemical passivation of Si(111)- and Si(100)-substrates
|
Angermann, H
|
|
2000
|
73 |
1-3 |
p. 178-183
6 p.
|
artikel
|
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