| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Characteristics of MBE-grown heterostructure HgCdTe/CdTe/Si materials and planar photovoltaic devices
|
Ashokan, R
|
|
1999
|
67 |
1-2 |
p. 88-94
7 p.
|
artikel
|
| 2 |
Defect formation in SiGe/Si structures grown on GaAs by CVD techniques utilizing a Si:H template layer
|
Feng, T
|
|
1999
|
67 |
1-2 |
p. 70-75
6 p.
|
artikel
|
| 3 |
Dislocation dynamics in relaxed graded composition semiconductors
|
Fitzgerald, E.A
|
|
1999
|
67 |
1-2 |
p. 53-61
9 p.
|
artikel
|
| 4 |
Editorial
|
|
|
1999
|
67 |
1-2 |
p. VII-
1 p.
|
artikel
|
| 5 |
Equilibrium size distributions of clusters during strained epitaxial growth
|
Medeiros-Ribeiro, G
|
|
1999
|
67 |
1-2 |
p. 31-38
8 p.
|
artikel
|
| 6 |
High temperature growth of AlN by plasma-enhanced molecular beam epitaxy
|
Fan, Z.Y
|
|
1999
|
67 |
1-2 |
p. 80-87
8 p.
|
artikel
|
| 7 |
Misfit dislocations in (001) semiconductor heterostructures grown by epitaxy
|
Rocher, André
|
|
1999
|
67 |
1-2 |
p. 62-69
8 p.
|
artikel
|
| 8 |
Novel interactions of supported clusters: contact epitaxy
|
Yeadon, Mark
|
|
1999
|
67 |
1-2 |
p. 76-79
4 p.
|
artikel
|
| 9 |
Nucleation and growth mechanisms during MBE of III–V compounds
|
Joyce, B.A
|
|
1999
|
67 |
1-2 |
p. 7-16
10 p.
|
artikel
|
| 10 |
Selective versus non-selective growth of Si and SiGe
|
De Boer, W.B
|
|
1999
|
67 |
1-2 |
p. 46-52
7 p.
|
artikel
|
| 11 |
Semiconductor alloys for monolithic integration with Si microelectronics
|
Moll, N
|
|
1999
|
67 |
1-2 |
p. 17-22
6 p.
|
artikel
|
| 12 |
TEM characterization of single and multiple InGaAs/GaAs quantum wires grown by metal–organic vapor phase epitaxy on V-grooved substrates
|
Taurino, A
|
|
1999
|
67 |
1-2 |
p. 39-45
7 p.
|
artikel
|
| 13 |
Theory of the (3×2) reconstruction of the GaAs(001) surface
|
Modine, N.A
|
|
1999
|
67 |
1-2 |
p. 1-6
6 p.
|
artikel
|
| 14 |
Thermodynamic and kinetic mechanisms in self-assembled quantum dot formation
|
Barabási, Albert-László
|
|
1999
|
67 |
1-2 |
p. 23-30
8 p.
|
artikel
|
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