| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A study on boron diffusion in high density polyethylene using the (n, α) reaction
|
Dokhale, P.A.
|
|
1998
|
57 |
1 |
p. 1-8
8 p.
|
artikel
|
| 2 |
Behavior of residual stress on CVD diamond films
|
Kim, J.G.
|
|
1998
|
57 |
1 |
p. 24-27
4 p.
|
artikel
|
| 3 |
Characterization of zirconia films deposited by r.f. magnetron sputtering
|
Ben Amor, S.
|
|
1998
|
57 |
1 |
p. 28-39
12 p.
|
artikel
|
| 4 |
Computational study of tetravalent uranium and plutonium lattice diffusion in zircon
|
Meis, C
|
|
1998
|
57 |
1 |
p. 52-61
10 p.
|
artikel
|
| 5 |
Correspondence
|
|
|
1998
|
57 |
1 |
p. 84-86
3 p.
|
artikel
|
| 6 |
Estimation of ionic drift velocity on some fast Ag+ ion conducting systems
|
Agrawal, R.C.
|
|
1998
|
57 |
1 |
p. 46-51
6 p.
|
artikel
|
| 7 |
Influence of Pd and Pt additives on the microstructural and electrical properties of SnO2-based sensors
|
Tadeev, A.V.
|
|
1998
|
57 |
1 |
p. 76-83
8 p.
|
artikel
|
| 8 |
Infrared dielectric response of the La2/3TiO3–LaAlO3 microwave ceramics system
|
Petzelt, J.
|
|
1998
|
57 |
1 |
p. 40-45
6 p.
|
artikel
|
| 9 |
Low temperature photoluminescence properties of Zn-doped GaAs
|
Hudait, M.K.
|
|
1998
|
57 |
1 |
p. 62-70
9 p.
|
artikel
|
| 10 |
Research on fluorescence spectra and structure of single-phase 4SrO·7Al2O3:Eu2+ phosphor prepared by solid-state reaction method
|
Minquan, Wang
|
|
1998
|
57 |
1 |
p. 18-23
6 p.
|
artikel
|
| 11 |
Simulation of a vertical reactor for high pressure organometallic chemical vapor deposition
|
Kepler, G.M
|
|
1998
|
57 |
1 |
p. 9-17
9 p.
|
artikel
|
| 12 |
Simulation study of strained layer Cd x Zn1−x Te–ZnTe quantum well laser structures
|
Vaya , P.R
|
|
1998
|
57 |
1 |
p. 71-75
5 p.
|
artikel
|
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