| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absence of ground state PLE peak in crescent-shaped AlGaAs/GaAs quantum wire superlattices
|
Wang, Xue-Lun
|
|
1998
|
51 |
1-3 |
p. 233-237
5 p.
|
artikel
|
| 2 |
A new approach to ZnCdSe quantum dots
|
Zhang, B.P
|
|
1998
|
51 |
1-3 |
p. 127-131
5 p.
|
artikel
|
| 3 |
Blue–green microcavity light emitting diode with monolithic MgZnSSe/ZnSSe Bragg reflectors
|
Uusimaa, P
|
|
1998
|
51 |
1-3 |
p. 18-21
4 p.
|
artikel
|
| 4 |
Bulk micromachining characterization of 0.2 μm HEMT MMIC technology for GaAs MEMS design
|
Ribas, R.P
|
|
1998
|
51 |
1-3 |
p. 267-273
7 p.
|
artikel
|
| 5 |
CAD tools and foundries to boost microsystems development
|
Courtois, B
|
|
1998
|
51 |
1-3 |
p. 242-253
12 p.
|
artikel
|
| 6 |
Characterisation of a low-voltage actuated gold microswitch
|
Attia, P
|
|
1998
|
51 |
1-3 |
p. 263-266
4 p.
|
artikel
|
| 7 |
Characterisation of InGaAs/InP microscopic Hall probe arrays with a 2DEG active layer
|
Cambel, V
|
|
1998
|
51 |
1-3 |
p. 188-191
4 p.
|
artikel
|
| 8 |
Characteristics of GaAs/AlAs superlattice structures grown on (311) oriented GaAs substrates by molecular beam epitaxy
|
Yoon, S.F
|
|
1998
|
51 |
1-3 |
p. 219-223
5 p.
|
artikel
|
| 9 |
Characterization of quantum structures by atomic-force microscopy
|
Wüllner, D
|
|
1998
|
51 |
1-3 |
p. 178-187
10 p.
|
artikel
|
| 10 |
Charge injection into porous silicon electroluminescent devices
|
Wakefield, G
|
|
1998
|
51 |
1-3 |
p. 141-145
5 p.
|
artikel
|
| 11 |
Effect of temperature on GaAs/AlGaAs multiple quantum well solar cells
|
Aperathitis, E
|
|
1998
|
51 |
1-3 |
p. 85-89
5 p.
|
artikel
|
| 12 |
Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBE
|
Nakashima, Hisao
|
|
1998
|
51 |
1-3 |
p. 229-232
4 p.
|
artikel
|
| 13 |
Electronic structure of nanocrystalline/amorphous silicon: a novel quantum size effect
|
Nomura, S
|
|
1998
|
51 |
1-3 |
p. 146-149
4 p.
|
artikel
|
| 14 |
Experimental and theoretical investigations of clusters in the magneto-fingerprints of Sinai billiards
|
Taylor, R.P
|
|
1998
|
51 |
1-3 |
p. 212-215
4 p.
|
artikel
|
| 15 |
Fabrication and characterisation of ultra sharp silicon field emitters
|
Huq, S.E
|
|
1998
|
51 |
1-3 |
p. 150-153
4 p.
|
artikel
|
| 16 |
Fabrication of independently contacted and tuneable 2D-electron-hole systems in GaAs/AlGaAs double quantum wells
|
Rubel, H
|
|
1998
|
51 |
1-3 |
p. 207-211
5 p.
|
artikel
|
| 17 |
First principles studies of point defects and impurities in cubic boron nitride
|
Castineira, J.L.P
|
|
1998
|
51 |
1-3 |
p. 53-57
5 p.
|
artikel
|
| 18 |
GaAs/AlGaAs based electrically tunable RCE photodiode
|
Waclawek, J
|
|
1998
|
51 |
1-3 |
p. 110-113
4 p.
|
artikel
|
| 19 |
Gain characteristics of InP/InGaAs heterostructure avalanche photodiode
|
Hyun, Kyung-Sook
|
|
1998
|
51 |
1-3 |
p. 106-109
4 p.
|
artikel
|
| 20 |
Gigahertz microcavity light emitters using resonant tunneling diodes
|
Van Hoof, C
|
|
1998
|
51 |
1-3 |
p. 72-75
4 p.
|
artikel
|
| 21 |
Hydride vapour phase epitaxy for nanostructures
|
Rodrı́guez Messmer, E
|
|
1998
|
51 |
1-3 |
p. 238-241
4 p.
|
artikel
|
| 22 |
InAs dots grown on InP (001) by droplet hetero-epitaxy using OMVPE
|
Nonogaki, Y
|
|
1998
|
51 |
1-3 |
p. 118-121
4 p.
|
artikel
|
| 23 |
Index
|
|
|
1998
|
51 |
1-3 |
p. 281-282
2 p.
|
artikel
|
| 24 |
Index
|
|
|
1998
|
51 |
1-3 |
p. 283-288
6 p.
|
artikel
|
| 25 |
Integration of SALICIDE process for deep-submicron CMOS technology: effect of nitrogen/argon-amorphized implant on SALICIDE formation
|
Ho, C.S
|
|
1998
|
51 |
1-3 |
p. 274-279
6 p.
|
artikel
|
| 26 |
Investigation of inhomogeneities in (Al, Ga, In)N heterostructures by STEM and cathodoluminescence
|
Lakner, H
|
|
1998
|
51 |
1-3 |
p. 44-52
9 p.
|
artikel
|
| 27 |
Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode
|
Schineller, B
|
|
1998
|
51 |
1-3 |
p. 34-38
5 p.
|
artikel
|
| 28 |
Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substrates
|
Vaccaro, P.O
|
|
1998
|
51 |
1-3 |
p. 94-98
5 p.
|
artikel
|
| 29 |
Light emitting diode arrays for consumer and medical applications
|
Rys, Andrew
|
|
1998
|
51 |
1-3 |
p. 90-93
4 p.
|
artikel
|
| 30 |
Micro and nanotechnologies: a challenge on the way forward to new markets
|
Benoit, Jean
|
|
1998
|
51 |
1-3 |
p. 254-257
4 p.
|
artikel
|
| 31 |
Micromachining and mechanical properties of GaInAs/InP microcantilevers
|
Mounaix, P
|
|
1998
|
51 |
1-3 |
p. 258-262
5 p.
|
artikel
|
| 32 |
Mobility (106 cm2 V−1 s−1) of 2DEGs, 30 nm from ex situ patterned GaAs regrowth interfaces
|
Burke, T.M
|
|
1998
|
51 |
1-3 |
p. 202-206
5 p.
|
artikel
|
| 33 |
Molecular beam epitaxy of SiGe heterostructures using a newly designed Si effusion cell
|
Yaguchi, H
|
|
1998
|
51 |
1-3 |
p. 170-172
3 p.
|
artikel
|
| 34 |
Multiwafer MOVPE technology for low dimensional Ga-Al-In-N structures
|
Beccard, R
|
|
1998
|
51 |
1-3 |
p. 39-43
5 p.
|
artikel
|
| 35 |
Near field optical spectroscopy of resonant tunnelling light-emitters
|
Mielants, Mieke
|
|
1998
|
51 |
1-3 |
p. 9-11
3 p.
|
artikel
|
| 36 |
Novel spontaneous emission control using 3-dimensional photonic bandgap crystal cavity
|
Hirayama, Hideki
|
|
1998
|
51 |
1-3 |
p. 99-102
4 p.
|
artikel
|
| 37 |
Novel type II strained layer superlattices for long wavelength infrared detectors
|
Talwar, D.N
|
|
1998
|
51 |
1-3 |
p. 12-17
6 p.
|
artikel
|
| 38 |
Observation of a new type of giant magnetoresistance with possible sensor applications
|
Overend, N
|
|
1998
|
51 |
1-3 |
p. 216-218
3 p.
|
artikel
|
| 39 |
Observation of surface potential at nanometer scale by electrostatic force microscopy (EFM) with large signals
|
Leveque, G
|
|
1998
|
51 |
1-3 |
p. 197-201
5 p.
|
artikel
|
| 40 |
Optical properties and lasing of ZnMgSSe/ZnSSe/ZnSe heterostructures grown by MOVPE
|
Gurskii, A.L
|
|
1998
|
51 |
1-3 |
p. 22-25
4 p.
|
artikel
|
| 41 |
Organic molecular beam deposition: technology and applications in electronics and photonics
|
Böhler, Achim
|
|
1998
|
51 |
1-3 |
p. 58-65
8 p.
|
artikel
|
| 42 |
Performance and design of vertical, ballistic, heterostructure field-effect transistors
|
Wernersson, Lars-Erik
|
|
1998
|
51 |
1-3 |
p. 76-80
5 p.
|
artikel
|
| 43 |
Photon assisted hypersonic phonon emission from terahertz-driven two-dimensional electron gases 1 This work was supported by the Australian Research Council. 1
|
Xu, W
|
|
1998
|
51 |
1-3 |
p. 81-84
4 p.
|
artikel
|
| 44 |
Possibility of subsurface investigations by scanning tunnelling microscope
|
Chorniy, V.Z
|
|
1998
|
51 |
1-3 |
p. 192-196
5 p.
|
artikel
|
| 45 |
Proximal probe-based fabrication of nanometer-scale devices
|
Campbell, P.M
|
|
1998
|
51 |
1-3 |
p. 173-177
5 p.
|
artikel
|
| 46 |
Recent advances in mid-infrared (3–6 μm) emitters
|
Biefeld, R.M
|
|
1998
|
51 |
1-3 |
p. 1-8
8 p.
|
artikel
|
| 47 |
Review of thin film technology in automobile industry
|
Suzui, Motofumi
|
|
1998
|
51 |
1-3 |
p. 66-71
6 p.
|
artikel
|
| 48 |
RT exciton waveguiding and lasing in submonolayer CdSe–(Zn,Mg)(S,Se) structures
|
Krestnikov, I.L
|
|
1998
|
51 |
1-3 |
p. 26-29
4 p.
|
artikel
|
| 49 |
Selective epitaxial growth of strained SiGe/Si for optoelectronic devices
|
Vescan, L
|
|
1998
|
51 |
1-3 |
p. 166-169
4 p.
|
artikel
|
| 50 |
Self-assembled, very long II–VI semiconductor quantum wires
|
Zhang, B.P.
|
|
1998
|
51 |
1-3 |
p. 224-228
5 p.
|
artikel
|
| 51 |
Si and C δ-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlattices
|
Jagadish, C
|
|
1998
|
51 |
1-3 |
p. 103-105
3 p.
|
artikel
|
| 52 |
Size control of Si nanocrystallites formed in amorphous Si matrix by Er-doping
|
Zhao, Xinwei
|
|
1998
|
51 |
1-3 |
p. 154-157
4 p.
|
artikel
|
| 53 |
Splitting of porous silicon microcavity mode due to the interaction with Si–H vibrations
|
Mattei, G
|
|
1998
|
51 |
1-3 |
p. 158-161
4 p.
|
artikel
|
| 54 |
Temperature effects in semiconductor quantum dot lasers
|
Fafard, S
|
|
1998
|
51 |
1-3 |
p. 114-117
4 p.
|
artikel
|
| 55 |
The mechanism of light emission from porous silicon: where are we 7 years on?
|
Calcott, P.D.J
|
|
1998
|
51 |
1-3 |
p. 132-140
9 p.
|
artikel
|
| 56 |
Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique: renormalization and screening
|
In Lee, Joo
|
|
1998
|
51 |
1-3 |
p. 122-126
5 p.
|
artikel
|
| 57 |
Two ways of porous Si photoluminescence excitation
|
Torchinskaya, T.V
|
|
1998
|
51 |
1-3 |
p. 162-165
4 p.
|
artikel
|
| 58 |
Vertical carrier transport in InP-based quantum well laser structures
|
Marcinkevičius, S.
|
|
1998
|
51 |
1-3 |
p. 30-33
4 p.
|
artikel
|
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