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                             60 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Alternative substrates for gallium nitride epitaxy: photoluminescence and morphological investigations Middleton, P.G.
 1997
 43 1-3 p. 154-156
3 p.
 artikel
2 Analysis of vaporization kinetics of group-III nitrides Averyanova, M.V.
 1997
 43 1-3 p. 167-171
5 p.
 artikel
3 Atomic structure of the GaN(100,110,111) surfaces Alves, J.L.A.
 1997
 43 1-3 p. 288-291
4 p.
 artikel
4 Beryllium chalcogenides for ZnSe-based light emitting devices Waag, A.
 1997
 43 1-3 p. 65-70
6 p.
 artikel
5 Characteristic exciton properties of ZnS and ZnSe films Manar, A.
 1997
 43 1-3 p. 121-125
5 p.
 artikel
6 Characterization of structural defects in MBE grown ZnSe Worschech, L.
 1997
 43 1-3 p. 29-32
4 p.
 artikel
7 Comparative optical characterization of GaN grown by metal-organic vapor phase epitaxy, gas source molecular beam epitaxy and halide vapor phase epitaxy Leroux, M.
 1997
 43 1-3 p. 237-241
5 p.
 artikel
8 Compensation in p-type ZnSe based semiconductors Prior, K.A.
 1997
 43 1-3 p. 9-15
7 p.
 artikel
9 Continuity conditions at semiconductor interfaces and in-heterostructure material physics Masri, P.
 1997
 43 1-3 p. 126-128
3 p.
 artikel
10 Deep blue emitting ZnS/ZnSe multiple quantum well lasers grown by MOVPE on (001) GaAs Mazzer, M.
 1997
 43 1-3 p. 97-101
5 p.
 artikel
11 Device characteristics of green II–VI semiconductor lasers Buijs, M.
 1997
 43 1-3 p. 49-54
6 p.
 artikel
12 Donor acceptor pair in molecular beam epitaxy grown GaN Ren, G.B.
 1997
 43 1-3 p. 242-245
4 p.
 artikel
13 Dynamics of excited states in GaN Hoffmann, A.
 1997
 43 1-3 p. 185-191
7 p.
 artikel
14 Effects of thermal annealing on properties of p-type ZnSe grown by MOVPE Ogata, Ken-ichi
 1997
 43 1-3 p. 5-8
4 p.
 artikel
15 Electrical properties of light-emitting devices based on the II–VI compounds BeTe and BeMgZnSe Fischer, F.
 1997
 43 1-3 p. 92-96
5 p.
 artikel
16 Electric field effects on excitons in gallium nitride Duboz, J.Y.
 1997
 43 1-3 p. 269-273
5 p.
 artikel
17 Electron gas in modulation doped GaN/AlGaN structures Bergman, J.P.
 1997
 43 1-3 p. 207-210
4 p.
 artikel
18 Electronic structure and temperature dependence of excitons in GaN Monemar, B.
 1997
 43 1-3 p. 172-175
4 p.
 artikel
19 Expected pronounced strengthening of II–VI lattices with beryllium chalcogenides Vèrié, C.
 1997
 43 1-3 p. 60-64
5 p.
 artikel
20 First laser diodes fabricated from III–V nitride based materials Nakamura, Shuji
 1997
 43 1-3 p. 258-264
7 p.
 artikel
21 GaN layer growth in relation to buffer deposition temperature Demangeot, F.
 1997
 43 1-3 p. 246-249
4 p.
 artikel
22 III–V nitride materials: an approach through amorphous GaAs1 − xNx thin films Lollman, D.
 1997
 43 1-3 p. 283-287
5 p.
 artikel
23 In-situ reflectometry and RDS monitoring of atomic layer MBE of ZnSe and ZnTe on GaAs Kastner, Marcus J.
 1997
 43 1-3 p. 33-37
5 p.
 artikel
24 Intensity-dependent hot-phonon relaxation in ZnSe Kutzer, V.
 1997
 43 1-3 p. 46-48
3 p.
 artikel
25 Issues in molecular-beam epitaxy of ZnSe-based heterostructures for blue-green lasers Tournié, E.
 1997
 43 1-3 p. 21-28
8 p.
 artikel
26 Linear spectroscopy and exciton binding energies in (Zn, Cd)Se-ZnSe heterostructures Essaid, Rachid
 1997
 43 1-3 p. 116-120
5 p.
 artikel
27 Luminescence and absorption of GaN films under high excitation Petit, S.
 1997
 43 1-3 p. 196-200
5 p.
 artikel
28 Microstructural studies of GaN grown on (0001) sapphire by MOVPE Vennegues, P.
 1997
 43 1-3 p. 274-278
5 p.
 artikel
29 Microstructure and growth morphology as related to electro-optical properties of heteroepitaxial wurtzite GaN on sapphire (0001) substrates Christiansen, S.
 1997
 43 1-3 p. 296-302
7 p.
 artikel
30 Molecular beam epitaxy of Be-related II–VI compounds Litz, T.
 1997
 43 1-3 p. 83-87
5 p.
 artikel
31 MOVPE growth of InGaN on sapphire using growth initiation cycles Schmitz, D.
 1997
 43 1-3 p. 228-236
9 p.
 artikel
32 Nitrogen doping in ZnSe Pöykkö, S.
 1997
 43 1-3 p. 1-4
4 p.
 artikel
33 Optical and magneto-optical differential spectroscopy of a ZnCdSe-ZnSe superlattice Rajira, A.
 1997
 43 1-3 p. 129-132
4 p.
 artikel
34 Optical gain in the nitrides: are there differences to other III–V semiconductors? Hangleiter, A.
 1997
 43 1-3 p. 201-206
6 p.
 artikel
35 Optically detected electron nuclear double resonance on the residual donor in GaN Koschnick, F.K.
 1997
 43 1-3 p. 181-184
4 p.
 artikel
36 Optical nonlinearities and lasing in II–VI multiple quantum wells Calcagnile, L.
 1997
 43 1-3 p. 71-78
8 p.
 artikel
37 Optimization of the MOVPE growth of GaN on sapphire Briot, O.
 1997
 43 1-3 p. 147-153
7 p.
 artikel
38 Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunction Raymond, A.
 1997
 43 1-3 p. 211-214
4 p.
 artikel
39 Plasma preconditioning of sapphire substrate for GaN epitaxy Heinlein, Christian
 1997
 43 1-3 p. 253-257
5 p.
 artikel
40 Potential applications of III–V nitride semiconductors Morkoç, Hadis
 1997
 43 1-3 p. 137-146
10 p.
 artikel
41 Preface Aulombard, R.L.
 1997
 43 1-3 p. ix-
1 p.
 artikel
42 Preparation of low resistive unintentionally doped n-type ZnSe Wienecke, M.
 1997
 43 1-3 p. 112-115
4 p.
 artikel
43 Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy Vermaut, P.
 1997
 43 1-3 p. 279-282
4 p.
 artikel
44 Properties of cubic GaN grown by MBE Brandt, Oliver
 1997
 43 1-3 p. 215-221
7 p.
 artikel
45 P-type doping of beryllium chalcogenides Lugauer, H.-J.
 1997
 43 1-3 p. 88-91
4 p.
 artikel
46 Relaxation of thermal strain in GaN epitaxial layers grown on sapphire Gfrörer, O.
 1997
 43 1-3 p. 250-252
3 p.
 artikel
47 Reproducibility of GaN and InGaN films grown in a multi-wafer rotating-disc reactor Schurman, Matthew J.
 1997
 43 1-3 p. 222-227
6 p.
 artikel
48 Resonant time-integrated and time-resolved photoluminescence in ZnSe-based heterostructures Deleporte, E.
 1997
 43 1-3 p. 38-45
8 p.
 artikel
49 Room temperature laser operation of wide band-gap II–VI laser diodes. Itoh, S.
 1997
 43 1-3 p. 55-59
5 p.
 artikel
50 Semi-insulating and n-type substrates quality ZnSe and ZnSe1 − x S x (x < 0.15) produced by low temperature physical vapour transport Mycielski, A.
 1997
 43 1-3 p. 108-111
4 p.
 artikel
51 Shallow donors in epitaxial GaN Fischer, S.
 1997
 43 1-3 p. 192-195
4 p.
 artikel
52 Structural and optical properties of II–VI thin films and II–VI multilayered structures grown on silicon by laser ablation Giardini, A.
 1997
 43 1-3 p. 102-107
6 p.
 artikel
53 Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3 Merz, C.
 1997
 43 1-3 p. 176-180
5 p.
 artikel
54 The key role of polarity in the growth process of (0001) nitrides Daudin, B.
 1997
 43 1-3 p. 157-160
4 p.
 artikel
55 Theoretical investigation of new MgS-ZnSe structures Bigenwald, P.
 1997
 43 1-3 p. 79-82
4 p.
 artikel
56 Ti/Ni ohmic contacts to n-type gallium nitride Vassilevski, K.V.
 1997
 43 1-3 p. 292-295
4 p.
 artikel
57 Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire Rouvière, J.L.
 1997
 43 1-3 p. 161-166
6 p.
 artikel
58 UV, blue and green light emitting diodes based on GaN-InGaN multiple quantum wells over sapphire and (111) spinel substrates Khan, M. Asif
 1997
 43 1-3 p. 265-268
4 p.
 artikel
59 ZnCdSe-ZnSe heterostructures grown by MOVPE Cloitre, T.
 1997
 43 1-3 p. 16-20
5 p.
 artikel
60 ZnSe-ZnCdSe single quantum wells: dispersion relations and absorption processes Bigenwald, P.
 1997
 43 1-3 p. 133-136
4 p.
 artikel
                             60 gevonden resultaten
 
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