| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new analytical model for cathodoluminescence emission as a function of the beam energy in GaAs and InP materials
|
Bresse, J.F.
|
|
1996
|
42 |
1-3 |
p. 199-203
5 p.
|
artikel
|
| 2 |
Application of scanning deep level transient spectroscopy for characterisation of multicrystalline silicon
|
Knobloch, K.
|
|
1996
|
42 |
1-3 |
p. 254-259
6 p.
|
artikel
|
| 3 |
Application of spectrally resolved scanning photoluminescence to assess relaxation processes of InGaAs and InAlAs layers strained in compression and tension
|
Krawczyk, S.K.
|
|
1996
|
42 |
1-3 |
p. 146-152
7 p.
|
artikel
|
| 4 |
A review of ion beam induced charge microscopy for integrated circuit analysis
|
Breese, M.B.H.
|
|
1996
|
42 |
1-3 |
p. 67-76
10 p.
|
artikel
|
| 5 |
A study of dislocations in GaAs:Te using electron and optical beams
|
Martín, P.
|
|
1996
|
42 |
1-3 |
p. 225-229
5 p.
|
artikel
|
| 6 |
A study of the interaction of electron beam generated excess charge-carriers with a Si/SiGe/Si heterostructure
|
Sieber, B.
|
|
1996
|
42 |
1-3 |
p. 243-248
6 p.
|
artikel
|
| 7 |
Behaviour of an amphoteric defect under standard DLTS and beam injection DLTS, respectively
|
Knobloch, K.
|
|
1996
|
42 |
1-3 |
p. 63-66
4 p.
|
artikel
|
| 8 |
Cathodoluminescence and EBIC study on misfit dislocations in SiGe/Si heterostructure
|
Sekiguchi, T.
|
|
1996
|
42 |
1-3 |
p. 141-145
5 p.
|
artikel
|
| 9 |
Cathodoluminescence dependence upon irradiation time
|
Achour, S.
|
|
1996
|
42 |
1-3 |
p. 289-292
4 p.
|
artikel
|
| 10 |
Cathodoluminescence microscopy of doped GaSb crystals
|
Méndez, B.
|
|
1996
|
42 |
1-3 |
p. 38-42
5 p.
|
artikel
|
| 11 |
Cathodoluminescence study of GaN epitaxial layers
|
Cremades, A.
|
|
1996
|
42 |
1-3 |
p. 230-234
5 p.
|
artikel
|
| 12 |
Cathodoluminescence study of the effect of annealing in HgI2 vapor on the defect structure of CdTe
|
Panin, G.
|
|
1996
|
42 |
1-3 |
p. 277-283
7 p.
|
artikel
|
| 13 |
Characterization of MQW heterostructures with acoustooptical cathodoluminescence spectrometer
|
Chelny, A.A.
|
|
1996
|
42 |
1-3 |
p. 189-191
3 p.
|
artikel
|
| 14 |
Characterization of semiconductor laser diodes by beam injection techniques
|
Jakubowicz, A.
|
|
1996
|
42 |
1-3 |
p. 1-7
7 p.
|
artikel
|
| 15 |
Cl and EBIC analysis of a p+ -InGaAs/n-InGaAs/n-InP/n+ -InP heterostructure
|
Boudjani, A.
|
|
1996
|
42 |
1-3 |
p. 192-198
7 p.
|
artikel
|
| 16 |
Comparison among lifetime techniques for the detection of transition metal contamination
|
Polignano, M.L.
|
|
1996
|
42 |
1-3 |
p. 157-163
7 p.
|
artikel
|
| 17 |
Compensation and deep levels in II–VI compounds
|
Castaldini, A.
|
|
1996
|
42 |
1-3 |
p. 302-305
4 p.
|
artikel
|
| 18 |
Conventional EBIC versus MOS/EBIC study of electrically active defects in Si and SOI
|
Bondarenko, I.
|
|
1996
|
42 |
1-3 |
p. 32-37
6 p.
|
artikel
|
| 19 |
Deposition parameters and surface topography of a-Si:H thin films obtained by the RF glow discharge process
|
Ebothe, J.
|
|
1996
|
42 |
1-3 |
p. 105-109
5 p.
|
artikel
|
| 20 |
Detection of junction failures and other defects in silicon and III–v devices using the LBIC technique in lateral configuration
|
Acciarri, M.
|
|
1996
|
42 |
1-3 |
p. 208-212
5 p.
|
artikel
|
| 21 |
Dose effects of cathodoluminescence in SiO2 layers on Si
|
Goldberg, M.
|
|
1996
|
42 |
1-3 |
p. 293-296
4 p.
|
artikel
|
| 22 |
E-beam tomography of planar semiconductor structures
|
Rau, E.I.
|
|
1996
|
42 |
1-3 |
p. 52-56
5 p.
|
artikel
|
| 23 |
EBIC defect characterisation: state of understanding and problems of interpretation
|
Kittler, M.
|
|
1996
|
42 |
1-3 |
p. 8-13
6 p.
|
artikel
|
| 24 |
EBIC studies of grain boundaries
|
Holt, D.B.
|
|
1996
|
42 |
1-3 |
p. 14-23
10 p.
|
artikel
|
| 25 |
EBIC study of recombination activity of oxygen precipitation related defects in si
|
Seifert, W.
|
|
1996
|
42 |
1-3 |
p. 260-264
5 p.
|
artikel
|
| 26 |
EBIC study on the electrical activity of stacking faults in silicon
|
Sekiguchi, T.
|
|
1996
|
42 |
1-3 |
p. 235-239
5 p.
|
artikel
|
| 27 |
Effect of hydrogenation on the properties of extended defects in semiconductors
|
Zozime, A.
|
|
1996
|
42 |
1-3 |
p. 57-62
6 p.
|
artikel
|
| 28 |
Effect of irradiation in sem on electrical properties of silicon
|
Feklisova, O.V.
|
|
1996
|
42 |
1-3 |
p. 274-276
3 p.
|
artikel
|
| 29 |
Energy-loss dependence of inelastic interactions between high-energy electrons and semiconductors: a model to determine the spatial distribution of electron-hole pairs generation
|
Romero, M.J.
|
|
1996
|
42 |
1-3 |
p. 168-171
4 p.
|
artikel
|
| 30 |
Foreword
|
Piqueras, Javier
|
|
1996
|
42 |
1-3 |
p. ix-
1 p.
|
artikel
|
| 31 |
Friction force microscopy characterization of semiconductor heterostructures
|
Tamayo, J.
|
|
1996
|
42 |
1-3 |
p. 122-126
5 p.
|
artikel
|
| 32 |
Images of grain boundaries in polycrystalline silicon solar cells by electron and ion beam induced charge collection
|
Donolato, C.
|
|
1996
|
42 |
1-3 |
p. 306-310
5 p.
|
artikel
|
| 33 |
Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients
|
Kamiński, P.
|
|
1996
|
42 |
1-3 |
p. 213-216
4 p.
|
artikel
|
| 34 |
Investigation of the low-temperature CL contrasts of dislocations in compound semiconductors
|
Schreiber, J.
|
|
1996
|
42 |
1-3 |
p. 24-31
8 p.
|
artikel
|
| 35 |
Investigation of the surface of P-implanted LPCVD silicon films
|
Plugaru, Rodica
|
|
1996
|
42 |
1-3 |
p. 240-242
3 p.
|
artikel
|
| 36 |
Lateral variations of the quantum well confinement energy reflected by SEM-cathodoluminescence
|
Jahn, U.
|
|
1996
|
42 |
1-3 |
p. 133-140
8 p.
|
artikel
|
| 37 |
LBIC characterization of LPE Si layers deposited on multicrystalline Si sub strates
|
Stemmer, M.
|
|
1996
|
42 |
1-3 |
p. 153-156
4 p.
|
artikel
|
| 38 |
LBIC investigation of impurity-dislocation interaction in FZ silicon wafers
|
Périchaud, I.
|
|
1996
|
42 |
1-3 |
p. 265-269
5 p.
|
artikel
|
| 39 |
Modeling electrostatic scanning force microscopy of semiconductors
|
Donolato, C.
|
|
1996
|
42 |
1-3 |
p. 99-104
6 p.
|
artikel
|
| 40 |
Monte carlo simulation of the EBIC grain boundary contrast in semiconductors
|
Tabet, N.
|
|
1996
|
42 |
1-3 |
p. 181-184
4 p.
|
artikel
|
| 41 |
Near band gap photoreflectance studies in CdTe, CdTe:V and cdte:ge crystals
|
Pal, U.
|
|
1996
|
42 |
1-3 |
p. 297-301
5 p.
|
artikel
|
| 42 |
Properties and structure of antiphase boundaries in GaAs/Ge solar cells
|
Holt, D.B.
|
|
1996
|
42 |
1-3 |
p. 204-207
4 p.
|
artikel
|
| 43 |
Reconstruction of recombination properties of extended defects in Si
|
Bondarenko, I.
|
|
1996
|
42 |
1-3 |
p. 270-273
4 p.
|
artikel
|
| 44 |
Residual polishing damage and surface quality of commercial InP wafers: A scanning PL study
|
Laczik, Z.
|
|
1996
|
42 |
1-3 |
p. 217-224
8 p.
|
artikel
|
| 45 |
Scanning probe microscopy for 2-D semiconductor dopant profiling and device failure analysis
|
Henning, A.K.
|
|
1996
|
42 |
1-3 |
p. 88-98
11 p.
|
artikel
|
| 46 |
SCH laser recombination rate from EBIC profiles
|
Romero, M.J.
|
|
1996
|
42 |
1-3 |
p. 172-175
4 p.
|
artikel
|
| 47 |
SEM CL studies on polar glide dislocations in CdTe
|
Uniewski, H.
|
|
1996
|
42 |
1-3 |
p. 284-288
5 p.
|
artikel
|
| 48 |
Simulation of recombination contrast of extended defects in the modulated EBIC
|
Sirotkin, V.V.
|
|
1996
|
42 |
1-3 |
p. 176-180
5 p.
|
artikel
|
| 49 |
Spatially resolved deep level transient spectroscopy using a scanning tunneling microscope
|
Maeda, K.
|
|
1996
|
42 |
1-3 |
p. 127-132
6 p.
|
artikel
|
| 50 |
STM-based luminescence spectroscopy on single quantum dots
|
Pistol, M.-E.
|
|
1996
|
42 |
1-3 |
p. 82-87
6 p.
|
artikel
|
| 51 |
Structural and electrical investigations of silicon wafer bonding interfaces
|
Benamara, Mourad
|
|
1996
|
42 |
1-3 |
p. 164-167
4 p.
|
artikel
|
| 52 |
Study of copper aggregations at dislocations in Gaas
|
Leipner, H.S.
|
|
1996
|
42 |
1-3 |
p. 185-188
4 p.
|
artikel
|
| 53 |
Study of misfit dislocations by EBIC, CL and HRTEM in GaAs/InGaAs lattice-strained multi-quantum well p-i-n solar cells
|
Mazzer, M.
|
|
1996
|
42 |
1-3 |
p. 43-51
9 p.
|
artikel
|
| 54 |
Surface damage in processed silicon
|
Castaldini, A.
|
|
1996
|
42 |
1-3 |
p. 249-253
5 p.
|
artikel
|
| 55 |
Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells
|
Panepinto, L.
|
|
1996
|
42 |
1-3 |
p. 77-81
5 p.
|
artikel
|
| 56 |
Theoretical aspects of the minority carrier recombination at dislocations in semiconductors
|
Farvacque, Jean-Louis
|
|
1996
|
42 |
1-3 |
p. 110-121
12 p.
|
artikel
|
Tijdschrift beschrijving