| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure
|
Overhof, H.
|
|
1989
|
4 |
1-4 |
p. 315-319
5 p.
|
artikel
|
| 2 |
Activation and gettering of intrinsic metallic impurities during rapid thermal processing
|
Hartiti, B.
|
|
1989
|
4 |
1-4 |
p. 129-132
4 p.
|
artikel
|
| 3 |
A hydrogen-carbon related deep donor in crystalline n-Si:C
|
Endrös, A.
|
|
1989
|
4 |
1-4 |
p. 35-39
5 p.
|
artikel
|
| 4 |
An analysis of the oxygen condensation processes in silicon by laser-scanning tomography
|
Gall, P.
|
|
1989
|
4 |
1-4 |
p. 483-487
5 p.
|
artikel
|
| 5 |
A photoluminescence study of zinc-implanted silicon
|
Henry, M.O.
|
|
1989
|
4 |
1-4 |
p. 201-204
4 p.
|
artikel
|
| 6 |
A study of carbon-implanted silicon for light-emitting diode fabrication
|
Canham, L.T.
|
|
1989
|
4 |
1-4 |
p. 95-99
5 p.
|
artikel
|
| 7 |
A study of growth defects in seeded and unseeded silicon on insulator layers
|
Williams, D.A.
|
|
1989
|
4 |
1-4 |
p. 423-427
5 p.
|
artikel
|
| 8 |
A uniaxial stress study of a copper-related photoluminescence band in silicon
|
McGuigan, K.G.
|
|
1989
|
4 |
1-4 |
p. 269-272
4 p.
|
artikel
|
| 9 |
Author index
|
|
|
1989
|
4 |
1-4 |
p. 497-498
2 p.
|
artikel
|
| 10 |
Bonding in clusters and condensed matter: The role of electron correlations
|
Friedel, J.
|
|
1989
|
4 |
1-4 |
p. 493-495
3 p.
|
artikel
|
| 11 |
Characterization of macroscopic defects in silicon after processing for CMOS and bipolar circuits
|
Steeds, J.W.
|
|
1989
|
4 |
1-4 |
p. 373-376
4 p.
|
artikel
|
| 12 |
Chromium diffusivity in boron-doped silicon: Reassessment of the activation energy from low temperature measurements
|
Zhu, J.
|
|
1989
|
4 |
1-4 |
p. 185-188
4 p.
|
artikel
|
| 13 |
Correlation of thermal history and thermal donor formation
|
Goth, D.
|
|
1989
|
4 |
1-4 |
p. 223-229
7 p.
|
artikel
|
| 14 |
Damage-free reactive ion etching of silicon in NF3 at low temperature
|
Konuma, M.
|
|
1989
|
4 |
1-4 |
p. 265-268
4 p.
|
artikel
|
| 15 |
Deep-level transient spectroscopy characterization of metallic contamination during plasma resist stripping
|
Joubert, O.
|
|
1989
|
4 |
1-4 |
p. 467-470
4 p.
|
artikel
|
| 16 |
Defect-related gate oxide breakdown
|
Bergholz, W.
|
|
1989
|
4 |
1-4 |
p. 359-366
8 p.
|
artikel
|
| 17 |
Defects and solidification front morphologies in lamp zone-melting-recrystallized silicon-on-insulator films
|
Dutartre, D.
|
|
1989
|
4 |
1-4 |
p. 211-216
6 p.
|
artikel
|
| 18 |
Defects created by hydrogen implantation into silicon
|
Hartung, J.
|
|
1989
|
4 |
1-4 |
p. 47-50
4 p.
|
artikel
|
| 19 |
Development of a scanning minority carrier transient spectroscopy method: Application to the study of gold diffusion in a silicon bicrystal
|
Heiser, T.
|
|
1989
|
4 |
1-4 |
p. 479-482
4 p.
|
artikel
|
| 20 |
Dislocations and mechanical properties of silicon
|
Sumino, Koji
|
|
1989
|
4 |
1-4 |
p. 335-341
7 p.
|
artikel
|
| 21 |
Dispersive microwave transient spectroscopy of deep levels in semiconductors
|
Huber, D.
|
|
1989
|
4 |
1-4 |
p. 489-492
4 p.
|
artikel
|
| 22 |
Donor formation in silicon owing to ion implantation of the rare earth metal erbium
|
Widdershoven, F.P.
|
|
1989
|
4 |
1-4 |
p. 71-74
4 p.
|
artikel
|
| 23 |
Dry etching damage of silicon: A review
|
Oehrlein, Gottlieb S.
|
|
1989
|
4 |
1-4 |
p. 441-450
10 p.
|
artikel
|
| 24 |
Editorial Board
|
|
|
1989
|
4 |
1-4 |
p. iii-
1 p.
|
artikel
|
| 25 |
Effect of deformation-induced defects on the Fermi level position at recombination centers in n-Si
|
Pohoryles, B.
|
|
1989
|
4 |
1-4 |
p. 139-141
3 p.
|
artikel
|
| 26 |
Effect of N+ ion implantation on the oxidation of silicon and metal-oxide-semiconductor characteristics
|
Kudo, Kazuhiro
|
|
1989
|
4 |
1-4 |
p. 383-386
4 p.
|
artikel
|
| 27 |
Effect of oxygen and carbon segregation on the electrical properties of grain boundaries in silicon
|
Pizzini, S.
|
|
1989
|
4 |
1-4 |
p. 353-358
6 p.
|
artikel
|
| 28 |
Effect of post-metallization annealing on W/Cr-metallized silicon junctions
|
Gonchond, J.P.
|
|
1989
|
4 |
1-4 |
p. 331-334
4 p.
|
artikel
|
| 29 |
Effect of sputter-etching conditions on the barrier characteristics and the process-induced defects in (Ti-W)/Si Schottky diodes
|
Bauza, D.
|
|
1989
|
4 |
1-4 |
p. 387-391
5 p.
|
artikel
|
| 30 |
Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon
|
Henry, A.
|
|
1989
|
4 |
1-4 |
p. 147-151
5 p.
|
artikel
|
| 31 |
Electronic behaviour of decorated stacking faults in silicon
|
Peaker, A.R.
|
|
1989
|
4 |
1-4 |
p. 123-128
6 p.
|
artikel
|
| 32 |
Electronic defects induced in silicon by SF6 plasma etching
|
Belkacem, A.
|
|
1989
|
4 |
1-4 |
p. 451-455
5 p.
|
artikel
|
| 33 |
Enhanced thermal donor formation and oxygen diffusion in silicon exposed to a hydrogen plasma
|
Murray, R.
|
|
1989
|
4 |
1-4 |
p. 299-302
4 p.
|
artikel
|
| 34 |
Epitaxial silicon chemical vapor deposition below atmospheric pressure
|
Regolini, J.L.
|
|
1989
|
4 |
1-4 |
p. 407-415
9 p.
|
artikel
|
| 35 |
Epitaxial silicon growth on porous silicon by reduced pressure, low temperature chemical vapour deposition
|
Oules, C.
|
|
1989
|
4 |
1-4 |
p. 435-439
5 p.
|
artikel
|
| 36 |
Fast-diffusing defects induced by copper in silicon
|
Prescha, Th.
|
|
1989
|
4 |
1-4 |
p. 79-82
4 p.
|
artikel
|
| 37 |
Formation of buried CoSi2 layers by ion implantation, studied by Mössbauer spectroscopy and rutherford backscattering spectroscopy
|
Vantomme, A.
|
|
1989
|
4 |
1-4 |
p. 157-161
5 p.
|
artikel
|
| 38 |
Four-vacancy damage clusters in neutron-irradiated silicon
|
Sienkiewicz, A.
|
|
1989
|
4 |
1-4 |
p. 247-250
4 p.
|
artikel
|
| 39 |
Gold diffusion in silicon: Enhanced substitutional gold formation by rhodium doping
|
Czaputa, R.
|
|
1989
|
4 |
1-4 |
p. 133-137
5 p.
|
artikel
|
| 40 |
Hall effect spectroscopy of thermal donors in silicon films synthesized by oxygen implantation
|
Sicart, J.
|
|
1989
|
4 |
1-4 |
p. 163-167
5 p.
|
artikel
|
| 41 |
Heavy metal contamination during integrated-circuit processing: Measurements of contamination level and internal gettering efficiency by surface photovoltage
|
Jastrzebski, L.
|
|
1989
|
4 |
1-4 |
p. 113-121
9 p.
|
artikel
|
| 42 |
High quality silicon-on-insulator substrates by implanted oxygen ions
|
Belz, J.
|
|
1989
|
4 |
1-4 |
p. 429-433
5 p.
|
artikel
|
| 43 |
Hydrogenation of shallow and deep levels in silicon
|
Jaworowski, A.E.
|
|
1989
|
4 |
1-4 |
p. 51-55
5 p.
|
artikel
|
| 44 |
Hydrogen in silicon: State, reactivity and evolution after ion implantation
|
Cerofolini, G.F.
|
|
1989
|
4 |
1-4 |
p. 19-24
6 p.
|
artikel
|
| 45 |
Hydrogen passivation and thermal reactivation of zinc double acceptors in silicon
|
Stolz, P
|
|
1989
|
4 |
1-4 |
p. 31-34
4 p.
|
artikel
|
| 46 |
Hydrogen-related electron traps in proton-bombarded float zone silicon
|
Svensson, B.G.
|
|
1989
|
4 |
1-4 |
p. 285-289
5 p.
|
artikel
|
| 47 |
Hydrogen-related vibrations in crystalline silicon
|
Deák, P.
|
|
1989
|
4 |
1-4 |
p. 57-62
6 p.
|
artikel
|
| 48 |
Increase of low-frequency-noise-generating defects in today's CMOS and BiCMOS technologies
|
Murray, D.C.
|
|
1989
|
4 |
1-4 |
p. 367-372
6 p.
|
artikel
|
| 49 |
In-diffusion of nitrogen from N2 ambient and its aggregation at lattice imperfections in silicon crystals
|
Itoh, T.
|
|
1989
|
4 |
1-4 |
p. 309-313
5 p.
|
artikel
|
| 50 |
Investigation on the electrically inactive antimony at thermal equilibrium in silicon
|
Angelucci, R.
|
|
1989
|
4 |
1-4 |
p. 243-245
3 p.
|
artikel
|
| 51 |
Iron diffusivity measurement with deep-level transient spectroscopy at room temperature
|
Ryoo, K.
|
|
1989
|
4 |
1-4 |
p. 251-255
5 p.
|
artikel
|
| 52 |
Isoelectronic bound exciton photoluminescence from a metastable defect in sulphur-doped silicon
|
Singh, Mandeep
|
|
1989
|
4 |
1-4 |
p. 303-307
5 p.
|
artikel
|
| 53 |
Kinetics of silicon amorphization by N+ implantation: Dose rate and substrate temperature effects
|
Claverie, A.
|
|
1989
|
4 |
1-4 |
p. 205-209
5 p.
|
artikel
|
| 54 |
LBIC measurements of the recombining activity of dislocations in float zone silicon
|
Mariani, J.L.
|
|
1989
|
4 |
1-4 |
p. 347-352
6 p.
|
artikel
|
| 55 |
Luminescence from transition metal centres in silicon doped with silver and nickel
|
Nazare, M.H.
|
|
1989
|
4 |
1-4 |
p. 273-276
4 p.
|
artikel
|
| 56 |
Mapping of electrically active defects in silicon by optical-beam-induced reflectance
|
Carver, Gary E.
|
|
1989
|
4 |
1-4 |
p. 471-477
7 p.
|
artikel
|
| 57 |
Microscopic aspects of oxygen precipitation in silicon
|
Ponce, F.A.
|
|
1989
|
4 |
1-4 |
p. 11-17
7 p.
|
artikel
|
| 58 |
Modelling of recombination activity and passivation by hydrogen of dislocations in silicon wafers
|
El Ghitani, H.
|
|
1989
|
4 |
1-4 |
p. 153-156
4 p.
|
artikel
|
| 59 |
1.54 μm photoluminescence of erbium-implanted silicon
|
Moutonnet, D.
|
|
1989
|
4 |
1-4 |
p. 75-77
3 p.
|
artikel
|
| 60 |
Near-surface electrical effects of oxidation and hydrogenation in silicon
|
Delidais, I.
|
|
1989
|
4 |
1-4 |
p. 277-280
4 p.
|
artikel
|
| 61 |
New photoluminescence lines in selenium-doped silicon
|
Henry, A.
|
|
1989
|
4 |
1-4 |
p. 261-264
4 p.
|
artikel
|
| 62 |
Optical absorption by platinum in crystalline silicon
|
Davies, Gordon
|
|
1989
|
4 |
1-4 |
p. 173-177
5 p.
|
artikel
|
| 63 |
Pairing of acceptors with interstitial donors in silicon and germanium
|
Deicher, M.
|
|
1989
|
4 |
1-4 |
p. 25-29
5 p.
|
artikel
|
| 64 |
Perturbed angular correlation spectroscopy of acceptor-donor pairs in silicon, germanium and GaAs
|
Achtziger, N.
|
|
1989
|
4 |
1-4 |
p. 169-172
4 p.
|
artikel
|
| 65 |
Perturbed angular correlation spectroscopy of hydrogen-passivated indium acceptors in silicon
|
Baurichter, A.
|
|
1989
|
4 |
1-4 |
p. 281-284
4 p.
|
artikel
|
| 66 |
Photoluminescence of defects introduced by deuterium plasmas in silicon
|
Weman, H.
|
|
1989
|
4 |
1-4 |
p. 461-465
5 p.
|
artikel
|
| 67 |
Photoluminescence study of reactive-ion-etched silicon: A new boron-related defect
|
Harris, C.
|
|
1989
|
4 |
1-4 |
p. 457-460
4 p.
|
artikel
|
| 68 |
Precipitation at grain boundaries in silicon
|
Hamet, J.F.
|
|
1989
|
4 |
1-4 |
p. 143-145
3 p.
|
artikel
|
| 69 |
Preface
|
|
|
1989
|
4 |
1-4 |
p. v-vi
nvt p.
|
artikel
|
| 70 |
Processing effects on the electrical properties of defects in silicon
|
Castaldini, A.
|
|
1989
|
4 |
1-4 |
p. 343-346
4 p.
|
artikel
|
| 71 |
Quenched-in, fast-diffusing defects in silicon studied by the perturbed angular correlation method
|
Reislöhner, U.
|
|
1989
|
4 |
1-4 |
p. 83-86
4 p.
|
artikel
|
| 72 |
Radiative recombination channels due to hydrogen in crystalline silicon
|
Canham, L.T.
|
|
1989
|
4 |
1-4 |
p. 41-45
5 p.
|
artikel
|
| 73 |
Recent developments in ion implantation in silicon
|
Pals, J.A.
|
|
1989
|
4 |
1-4 |
p. 87-94
8 p.
|
artikel
|
| 74 |
Reduction of process-induced defects in power devices
|
Schulze, H.J.
|
|
1989
|
4 |
1-4 |
p. 377-381
5 p.
|
artikel
|
| 75 |
Regrowth of indium-implanted (100), (110) and (111) silicon crystals studied with Rutherford backscattering and perturbed angular correlation techniques
|
Alves, E.
|
|
1989
|
4 |
1-4 |
p. 189-195
7 p.
|
artikel
|
| 76 |
Role of point defects in the transient diffusion and clustering of implanted boron in silicon
|
Cowern, N.E.B.
|
|
1989
|
4 |
1-4 |
p. 101-105
5 p.
|
artikel
|
| 77 |
RTA-induced defects: a comparison between lamp and electron beam techniques
|
Susi, E.
|
|
1989
|
4 |
1-4 |
p. 231-235
5 p.
|
artikel
|
| 78 |
Seeding recrystallization for producing thick silicon-on-insulator films on non-planar substrates
|
Tillack, B.
|
|
1989
|
4 |
1-4 |
p. 237-241
5 p.
|
artikel
|
| 79 |
Simulation of oxygen precipitation in Czochralski grown silicon
|
Schrems, M.
|
|
1989
|
4 |
1-4 |
p. 393-399
7 p.
|
artikel
|
| 80 |
Status and future of silicon crystal growth
|
Zulehner, Werner
|
|
1989
|
4 |
1-4 |
p. 1-10
10 p.
|
artikel
|
| 81 |
Strain compensation effects on the annealing of Ge+-B+-implanted silicon
|
Ferreiro, A.
|
|
1989
|
4 |
1-4 |
p. 217-222
6 p.
|
artikel
|
| 82 |
Subject index
|
|
|
1989
|
4 |
1-4 |
p. 499-505
7 p.
|
artikel
|
| 83 |
Substrate-damage-free laser recrystallization of polycrystalline silicon
|
Buchner, R.
|
|
1989
|
4 |
1-4 |
p. 197-200
4 p.
|
artikel
|
| 84 |
Surface characterization of high-dose Sb+ implanted rapid thermal annealed monocrystalline silicon
|
Kumar, S.N
|
|
1989
|
4 |
1-4 |
p. 179-184
6 p.
|
artikel
|
| 85 |
The effect of phosphorus background concentration on the diffusion of tin, arsenic and antimony in silicon
|
Nylandsted Larsen, A.
|
|
1989
|
4 |
1-4 |
p. 107-112
6 p.
|
artikel
|
| 86 |
The effect of silicides on the induction and removal of defects in silicon
|
Maex, K.
|
|
1989
|
4 |
1-4 |
p. 321-329
9 p.
|
artikel
|
| 87 |
The formation of dislocations and their in-situ detection during silicon vapour phase epitaxy at reduced temperature
|
Pidduck, A.J.
|
|
1989
|
4 |
1-4 |
p. 417-422
6 p.
|
artikel
|
| 88 |
Thermal annealing of excimer-laser-induced defects in virgin silicon
|
Hartiti, B.
|
|
1989
|
4 |
1-4 |
p. 257-260
4 p.
|
artikel
|
| 89 |
Thermal donors and oxygen-related complexes in silicon
|
Gregorkiewicz, T.
|
|
1989
|
4 |
1-4 |
p. 291-297
7 p.
|
artikel
|
| 90 |
The role of atmospheric oxygen and water in the generation of water marks on the silicon surface in cleaning processes
|
Watanabe, M.
|
|
1989
|
4 |
1-4 |
p. 401-405
5 p.
|
artikel
|
| 91 |
Transition metals in silicon and their gettering behaviour
|
Graff, K.
|
|
1989
|
4 |
1-4 |
p. 63-69
7 p.
|
artikel
|
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