| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Activation energies for the formation of oxygen clusters related to the thermal donors in silicon
|
Hallberg, T.
|
|
1996
|
36 |
1-3 |
p. 13-15
3 p.
|
artikel
|
| 2 |
Anomalous oxygen diffusivity and the early stages of silicon oxidation
|
Cerofolini, G.F.
|
|
1996
|
36 |
1-3 |
p. 104-107
4 p.
|
artikel
|
| 3 |
A thermodynamic model for the growth of buried oxide layers by thermal oxidation
|
Schroer, E.
|
|
1996
|
36 |
1-3 |
p. 237-240
4 p.
|
artikel
|
| 4 |
Author index of volume 36
|
|
|
1996
|
36 |
1-3 |
p. 295-296
2 p.
|
artikel
|
| 5 |
Bandgap widening in quantum sieves
|
Cerofolini, G.F.
|
|
1996
|
36 |
1-3 |
p. 108-111
4 p.
|
artikel
|
| 6 |
Bonding and diffusion in hydrogenated amorphous silicon by tight-binding molecular dynamics
|
Lanzavecchia, Stefano
|
|
1996
|
36 |
1-3 |
p. 264-267
4 p.
|
artikel
|
| 7 |
Carbon in β-rhombohedral boron
|
Werheit, Helmut
|
|
1996
|
36 |
1-3 |
p. 204-208
5 p.
|
artikel
|
| 8 |
Cavities owing to hydrogen in Si single crystals grown by continuously charging CZ method
|
Iino, E.
|
|
1996
|
36 |
1-3 |
p. 146-149
4 p.
|
artikel
|
| 9 |
Characterization of SOI-SIMOX structures using Brillouin light scattering
|
Ghislotti, G.
|
|
1996
|
36 |
1-3 |
p. 129-132
4 p.
|
artikel
|
| 10 |
Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers
|
Gräf, D.
|
|
1996
|
36 |
1-3 |
p. 50-54
5 p.
|
artikel
|
| 11 |
Comparison of N- and P-type silicon irradiated by MeV protons and post-annealed at different temperatures
|
Ntsoenzok, E.
|
|
1996
|
36 |
1-3 |
p. 154-157
4 p.
|
artikel
|
| 12 |
Defect levels in n-silicon after high energy and high dose implantation of proton
|
Barbot, J.F.
|
|
1996
|
36 |
1-3 |
p. 81-84
4 p.
|
artikel
|
| 13 |
Detailed analysis of β-SiC formation by high dose carbon ion implantation in silicon
|
Romano-Rodriguez, A.
|
|
1996
|
36 |
1-3 |
p. 282-285
4 p.
|
artikel
|
| 14 |
Determination of the criteria for nucleation of ring-OSF from small as-grown oxygen precipitates in CZSi crystals
|
Marsden, Kieran
|
|
1996
|
36 |
1-3 |
p. 16-21
6 p.
|
artikel
|
| 15 |
Editorial Board
|
|
|
1996
|
36 |
1-3 |
p. iii-
1 p.
|
artikel
|
| 16 |
Effect of native point defects on morphology of gettering centres in CZ-silicon wafers
|
Enisherlova, K.L.
|
|
1996
|
36 |
1-3 |
p. 120-124
5 p.
|
artikel
|
| 17 |
Effect of nitrogen contamination by crucible encapsulation on polycrystalline silicon material quality
|
Binetti, S.
|
|
1996
|
36 |
1-3 |
p. 68-72
5 p.
|
artikel
|
| 18 |
Effects of annealing in oxygen and nitrogen atmosphere on F.Z. silicon wafers
|
Gay, N.
|
|
1996
|
36 |
1-3 |
p. 125-128
4 p.
|
artikel
|
| 19 |
Electrical characteristics of oxygen precipitation related defects in Czochralski silicon wafers
|
Kirscht, F.G.
|
|
1996
|
36 |
1-3 |
p. 230-236
7 p.
|
artikel
|
| 20 |
EPR of interstitial hydrogen in silicon: Uniaxial stress experiments
|
Gorelkinskii, Yu.V.
|
|
1996
|
36 |
1-3 |
p. 133-137
5 p.
|
artikel
|
| 21 |
Etherogeneous precipitation in oxygen-implanted silicon
|
Cerofolini, G.F.
|
|
1996
|
36 |
1-3 |
p. 26-29
4 p.
|
artikel
|
| 22 |
Evaluation of the quality of HMCZ Si single crystals with a diameter of 200 mm
|
Iino, E.
|
|
1996
|
36 |
1-3 |
p. 142-145
4 p.
|
artikel
|
| 23 |
Fermi level dependent properties of hydrogen in crystalline silicon
|
Csaszar, W.
|
|
1996
|
36 |
1-3 |
p. 112-115
4 p.
|
artikel
|
| 24 |
Formation of epitaxial β-SiC layers by fullerene-carbonization of silicon(001): a comparison between the use of C60 and C70 molecules
|
Henke, S.
|
|
1996
|
36 |
1-3 |
p. 291-294
4 p.
|
artikel
|
| 25 |
Hydrogen passivation of gold centers in silicon
|
Sveinbjörnsson, EinarÖ.
|
|
1996
|
36 |
1-3 |
p. 192-195
4 p.
|
artikel
|
| 26 |
Impact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodes
|
Simoen, E.
|
|
1996
|
36 |
1-3 |
p. 179-182
4 p.
|
artikel
|
| 27 |
Influence of carbon and oxygen on phosphorus and aluminium co-gettering in silicon solar cells
|
Mahfoud, K.
|
|
1996
|
36 |
1-3 |
p. 63-67
5 p.
|
artikel
|
| 28 |
Influence of hydrogen and oxygen on the melt properties and the crystal growth in silicon
|
Ikari, Atsushi
|
|
1996
|
36 |
1-3 |
p. 42-45
4 p.
|
artikel
|
| 29 |
Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon
|
Trauwaert, M.-A.
|
|
1996
|
36 |
1-3 |
p. 196-199
4 p.
|
artikel
|
| 30 |
Influence of oxygen and nitrogen on point defect aggregation in silicon single crystals
|
Ammon, W.v.
|
|
1996
|
36 |
1-3 |
p. 33-41
9 p.
|
artikel
|
| 31 |
Influence of oxygen on the recombination strength of dislocations in silicon wafers
|
Simon, J.J.
|
|
1996
|
36 |
1-3 |
p. 183-186
4 p.
|
artikel
|
| 32 |
Influence of thermal history during Czochralski silicon crystal growth on OISF nuclei formation
|
Porrini, M.
|
|
1996
|
36 |
1-3 |
p. 162-166
5 p.
|
artikel
|
| 33 |
Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography
|
Kissinger, G.
|
|
1996
|
36 |
1-3 |
p. 225-229
5 p.
|
artikel
|
| 34 |
Light impurities and their interactions in silicon
|
Newman, R.C.
|
|
1996
|
36 |
1-3 |
p. 1-12
12 p.
|
artikel
|
| 35 |
Luminescence centres containing two, three and four hydrogen atoms in radiation-damaged silicon
|
Safonov, A.N.
|
|
1996
|
36 |
1-3 |
p. 251-254
4 p.
|
artikel
|
| 36 |
Magnetic resonance spectroscopy of hydrogen-passivated double donors in silicon
|
Zevenbergen, I.S.
|
|
1996
|
36 |
1-3 |
p. 138-141
4 p.
|
artikel
|
| 37 |
New oxygen-related EPR spectra in proton-irradiated silicon
|
Abdullin, Kh.A.
|
|
1996
|
36 |
1-3 |
p. 77-80
4 p.
|
artikel
|
| 38 |
Non-doping light impurities in silicon for solar cells
|
Pivac, B.
|
|
1996
|
36 |
1-3 |
p. 55-62
8 p.
|
artikel
|
| 39 |
Optical absorption coefficient of polycrystalline silicon with very high oxygen content
|
Serra, J.M.
|
|
1996
|
36 |
1-3 |
p. 73-76
4 p.
|
artikel
|
| 40 |
Optical investigation of Si1−y C y alloys (0 ⩽ y ⩽ 0.015)
|
Pressel, K.
|
|
1996
|
36 |
1-3 |
p. 167-170
4 p.
|
artikel
|
| 41 |
Organizers and sponsors
|
|
|
1996
|
36 |
1-3 |
p. x-
1 p.
|
artikel
|
| 42 |
Oxygen content of substrates and tunnel oxide quality: an in-line systematic analysis
|
Sottocasa, E.
|
|
1996
|
36 |
1-3 |
p. 187-191
5 p.
|
artikel
|
| 43 |
Oxygen distribution in Czochralski silicon melts measured by an electrochemical oxygen sensor
|
Seidl, A.
|
|
1996
|
36 |
1-3 |
p. 46-49
4 p.
|
artikel
|
| 44 |
Oxygen precipitate precursors and size thresholds for the preferential nucleation for copper and nickel precipitation in silicon: the detection of copper and nickel contamination by minority carrier lifetime methods
|
Bazzali, A.
|
|
1996
|
36 |
1-3 |
p. 85-90
6 p.
|
artikel
|
| 45 |
Oxygen precipitates in annealed CZ silicon wafers detected by SIRM and FTIR spectroscopy
|
Veve, Caroline
|
|
1996
|
36 |
1-3 |
p. 200-203
4 p.
|
artikel
|
| 46 |
Oxygen redistribution during diffusion in thin silicon layers
|
Serra, J.M.
|
|
1996
|
36 |
1-3 |
p. 175-178
4 p.
|
artikel
|
| 47 |
Oxygen related defects in germanium
|
Clauws, P.
|
|
1996
|
36 |
1-3 |
p. 213-220
8 p.
|
artikel
|
| 48 |
Photoluminescence characterization of SF6 O2 plasma etching of silicon
|
Buyanova, I.A.
|
|
1996
|
36 |
1-3 |
p. 100-103
4 p.
|
artikel
|
| 49 |
Preface
|
Borghesi, Alessandro
|
|
1996
|
36 |
1-3 |
p. ix-
1 p.
|
artikel
|
| 50 |
SiH stretch modes of hydrogen — vacancy defects in silicon
|
Bech Nielsen, B.
|
|
1996
|
36 |
1-3 |
p. 259-263
5 p.
|
artikel
|
| 51 |
Silicon interstitials generation during the exposure of silicon to hydrogen plasma
|
Tonini, R.
|
|
1996
|
36 |
1-3 |
p. 158-161
4 p.
|
artikel
|
| 52 |
Simulation of oxygen precipitation in CZSi crystal during the pulling process
|
Nakamura, K.
|
|
1996
|
36 |
1-3 |
p. 22-25
4 p.
|
artikel
|
| 53 |
Stress-induced oxygen precipitation in CzSi
|
Misiuk, A.
|
|
1996
|
36 |
1-3 |
p. 30-32
3 p.
|
artikel
|
| 54 |
Structural particularities of carbon-incorporated SiGe heterostructures
|
Guedj, C.
|
|
1996
|
36 |
1-3 |
p. 286-290
5 p.
|
artikel
|
| 55 |
Study of post-deposition contamination in low-temperature deposited polysilicon films
|
Bertomeu, J.
|
|
1996
|
36 |
1-3 |
p. 96-99
4 p.
|
artikel
|
| 56 |
Subject index of volume 36
|
|
|
1996
|
36 |
1-3 |
p. 297-301
5 p.
|
artikel
|
| 57 |
Supersaturated carbon in silicon and silicon/germanium alloys
|
Osten, H.J.
|
|
1996
|
36 |
1-3 |
p. 268-274
7 p.
|
artikel
|
| 58 |
Surface mode excitation in platelet SiO x precipitates in silicon
|
Sassella, A.
|
|
1996
|
36 |
1-3 |
p. 221-224
4 p.
|
artikel
|
| 59 |
The complexing of oxygen with the Group II impurities Be, Cd and Zn in silicon
|
Daly, S.E.
|
|
1996
|
36 |
1-3 |
p. 116-119
4 p.
|
artikel
|
| 60 |
The effect of carbon on diffusion in silicon
|
Stolk, P.A.
|
|
1996
|
36 |
1-3 |
p. 275-281
7 p.
|
artikel
|
| 61 |
The fracture strength of nitrogen doped silicon wafers
|
Vedde, Jan
|
|
1996
|
36 |
1-3 |
p. 246-250
5 p.
|
artikel
|
| 62 |
The influences of carbon, hydrogen and nitrogen on the floating zone growth of four inch silicon crystals
|
Wolf, E.
|
|
1996
|
36 |
1-3 |
p. 209-212
4 p.
|
artikel
|
| 63 |
The nitrogen-pair oxygen defect in silicon
|
Berg Rasmussen, F.
|
|
1996
|
36 |
1-3 |
p. 91-95
5 p.
|
artikel
|
| 64 |
Thermal anneal activation of defects in hydrogen plasma-treated silicon
|
Nam, C.W.
|
|
1996
|
36 |
1-3 |
p. 255-258
4 p.
|
artikel
|
| 65 |
Thermal donor formation in aluminum doped silicon
|
Lindström, J.L.
|
|
1996
|
36 |
1-3 |
p. 150-153
4 p.
|
artikel
|
| 66 |
The role of rapidly diffusing dimers in oxygen loss and the association of thermal donors with small oxygen clusters
|
McQuaid, S.A.
|
|
1996
|
36 |
1-3 |
p. 171-174
4 p.
|
artikel
|
| 67 |
Uniaxial stress studies on the dominant nitrogen defect in silicon and germanium
|
Berg Rasmussen, F.
|
|
1996
|
36 |
1-3 |
p. 241-245
5 p.
|
artikel
|
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