| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A closed UHV focused ion beam patterning and MBE regrowth technique
|
Muessig, H.
|
|
1995
|
35 |
1-3 |
p. 208-213
6 p.
|
artikel
|
| 2 |
A comparison of observed and simulated scanning tunneling images of the reconstructed GaAs(001) surface
|
Matthai, C.C.
|
|
1995
|
35 |
1-3 |
p. 489-492
4 p.
|
artikel
|
| 3 |
A hole facet wire formed by MBE regrowth over an ex-situ patterned GaAs substrate
|
Evans, R.J.
|
|
1995
|
35 |
1-3 |
p. 203-207
5 p.
|
artikel
|
| 4 |
Analysis of reaction gases flow in CVD processes
|
Mizuno, Yoshichika
|
|
1995
|
35 |
1-3 |
p. 156-159
4 p.
|
artikel
|
| 5 |
Anisotropic optical matrix elements in [hhk]-oriented quantum wires
|
Atsushi Yamaguchi, A.
|
|
1995
|
35 |
1-3 |
p. 288-294
7 p.
|
artikel
|
| 6 |
Anomalous peaks in the Shubnikov-de Haas spectra of a top gated AlGaAs GaAs heterostructure
|
Ramvall, P.
|
|
1995
|
35 |
1-3 |
p. 382-385
4 p.
|
artikel
|
| 7 |
A novel approach in fabrication and study of laterally quantum-confined resonant tunnelling diodes
|
Wang, Jiannong
|
|
1995
|
35 |
1-3 |
p. 192-197
6 p.
|
artikel
|
| 8 |
Are quantum semiconductor devices delivering?
|
Kelly, M.J.
|
|
1995
|
35 |
1-3 |
p. 1-6
6 p.
|
artikel
|
| 9 |
Atomic-scale characterization of interfaces in the GaAs/AlGaAs superlattices
|
Pusep, Yu.A.
|
|
1995
|
35 |
1-3 |
p. 180-183
4 p.
|
artikel
|
| 10 |
Author index of volume 35
|
|
|
1995
|
35 |
1-3 |
p. 497-499
3 p.
|
artikel
|
| 11 |
Ballistic elecron emission microscopy of InAs Ga 1 − x Al x As relaxed heterostructure interfaces
|
Ke, Mao-long
|
|
1995
|
35 |
1-3 |
p. 349-352
4 p.
|
artikel
|
| 12 |
Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy
|
Yarn, K.F.
|
|
1995
|
35 |
1-3 |
p. 29-33
5 p.
|
artikel
|
| 13 |
Be delta-doped layers in GaAs studied by scanning tunnelling microscopy
|
Koenraad, P.M.
|
|
1995
|
35 |
1-3 |
p. 485-488
4 p.
|
artikel
|
| 14 |
Blue shifts from doubly δ-doped heterostructures
|
Dewdney, A.J.
|
|
1995
|
35 |
1-3 |
p. 345-348
4 p.
|
artikel
|
| 15 |
Can nanolithography ever be a manufacturing technology?
|
Pease, R.F.W.
|
|
1995
|
35 |
1-3 |
p. 188-191
4 p.
|
artikel
|
| 16 |
Characterization of Ni/Ge/Au/Ni/Au contact metallization on AlGaAs InGaAs heterostructures for pseudomorphic heterojunction field effect transistor application
|
Lee, H.J.
|
|
1995
|
35 |
1-3 |
p. 234-238
5 p.
|
artikel
|
| 17 |
Charge capture in AlGaAs GaAs heterostructures with disordered antidot lattice
|
Basmaji, P.
|
|
1995
|
35 |
1-3 |
p. 322-324
3 p.
|
artikel
|
| 18 |
Collective fabrication of microsystems compatible with CMOS through the CMP service
|
Karam, J.M.
|
|
1995
|
35 |
1-3 |
p. 219-223
5 p.
|
artikel
|
| 19 |
Comparative studies of photoluminescence from n and p δ doping wells in GaAs
|
Enderlein, R.
|
|
1995
|
35 |
1-3 |
p. 396-400
5 p.
|
artikel
|
| 20 |
Critical layer thickness in MOCVD grown InGaAsGaAs strained quantum wells
|
Zhang, Xiaobo
|
|
1995
|
35 |
1-3 |
p. 184-187
4 p.
|
artikel
|
| 21 |
Determination of barrier heights in heterostructures utilising real-space transfer of hot electrons
|
Williams, J.P.
|
|
1995
|
35 |
1-3 |
p. 263-266
4 p.
|
artikel
|
| 22 |
Direct optical analysis of the carrier diffusion in semiconductor wire structures
|
Hübner, B.
|
|
1995
|
35 |
1-3 |
p. 273-277
5 p.
|
artikel
|
| 23 |
Disordered superlattices
|
Sasaki, Akio
|
|
1995
|
35 |
1-3 |
p. 278-283
6 p.
|
artikel
|
| 24 |
Doping dependence of intersubband transitions in Si 1−x Ge x Si multiple quantum wells
|
Karunasiri, Gamani
|
|
1995
|
35 |
1-3 |
p. 463-466
4 p.
|
artikel
|
| 25 |
Dual-branch electron waveguide couplers
|
Vanbésien, O.
|
|
1995
|
35 |
1-3 |
p. 90-96
7 p.
|
artikel
|
| 26 |
Edge states in strong electric and magnetic fields in a two-dimensional semiconductor system
|
Xu, W.
|
|
1995
|
35 |
1-3 |
p. 341-344
4 p.
|
artikel
|
| 27 |
Editorial Board
|
|
|
1995
|
35 |
1-3 |
p. iii-
1 p.
|
artikel
|
| 28 |
Electrical conductivity of δ doping superlattices parallel to the growth direction
|
Leite, J.R.
|
|
1995
|
35 |
1-3 |
p. 250-255
6 p.
|
artikel
|
| 29 |
Electron mobility in low temperature grown gallium arsenide
|
Arifin, P.
|
|
1995
|
35 |
1-3 |
p. 330-333
4 p.
|
artikel
|
| 30 |
Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl4
|
Kim, Moo-Sung
|
|
1995
|
35 |
1-3 |
p. 214-218
5 p.
|
artikel
|
| 31 |
Examination of internally delta-doped gallium arsenide resonant tunnelling structures
|
Nawaz, R.
|
|
1995
|
35 |
1-3 |
p. 353-356
4 p.
|
artikel
|
| 32 |
Excitation spectra of two-dimensional bounded electronic systems in a strong magnetic field
|
Andreev, Al.A.
|
|
1995
|
35 |
1-3 |
p. 429-434
6 p.
|
artikel
|
| 33 |
Fermi-edge singularity of two dimensional electrons in asymmetric coupled double quantum wells
|
Lee, J.I.
|
|
1995
|
35 |
1-3 |
p. 325-329
5 p.
|
artikel
|
| 34 |
Field dependent vertical-transport studies in Al 0.24 Ga 0.76 As GaAs double-quantum-well structures
|
Weber, S.
|
|
1995
|
35 |
1-3 |
p. 245-249
5 p.
|
artikel
|
| 35 |
Formation of AlGaAs quantum wires on vicinal GaAs(110) surfaces misoriented 3° toward (111)A by molecular beam epitaxy
|
Nakashima, Hisao
|
|
1995
|
35 |
1-3 |
p. 295-298
4 p.
|
artikel
|
| 36 |
Ge composition dependence of photoluminescence properties of Si 1−x Ge x Si disordered superlattices
|
Wakahara, Akihiro
|
|
1995
|
35 |
1-3 |
p. 479-484
6 p.
|
artikel
|
| 37 |
Growth and characterization of strain-compensated InAsP GaInP and InGaAs GaInP multiple quantum wells
|
Tu, C.W.
|
|
1995
|
35 |
1-3 |
p. 166-170
5 p.
|
artikel
|
| 38 |
Growth of GaAsInP heteromaterials and corresponding strain determination
|
Chen, Songyan
|
|
1995
|
35 |
1-3 |
p. 133-137
5 p.
|
artikel
|
| 39 |
High power aluminium-free InGaAsP/GaAs pumping diode lasers
|
Razeghi, M.
|
|
1995
|
35 |
1-3 |
p. 34-41
8 p.
|
artikel
|
| 40 |
Hydride — VPE embedding of InAlGaAs laser structures with SI InP:Fe
|
Göbel, R.
|
|
1995
|
35 |
1-3 |
p. 59-63
5 p.
|
artikel
|
| 41 |
Influence of strain relaxation on the electronic properties of buried quantum wells and wires
|
Downes, J.R.
|
|
1995
|
35 |
1-3 |
p. 357-363
7 p.
|
artikel
|
| 42 |
Influence of strong magnetic fields on the ionization of the modulation-doped donors in Al x Ga1 − x AsGaAsAl yGa1 − yAs single quantum wells
|
Xu, W.
|
|
1995
|
35 |
1-3 |
p. 334-340
7 p.
|
artikel
|
| 43 |
Influence of surface structure on surface segregation and alloy properties in (100)- and (311)-oriented InGaAs GaAs heterostructures
|
Guimarães, F.E.G.
|
|
1995
|
35 |
1-3 |
p. 318-321
4 p.
|
artikel
|
| 44 |
InN thin-film growth using an ECR plasma source
|
Sato, Yuichi
|
|
1995
|
35 |
1-3 |
p. 171-175
5 p.
|
artikel
|
| 45 |
Investigation of resonant interband tunneling structures using a three-band k · p model
|
Liu, M.H.
|
|
1995
|
35 |
1-3 |
p. 435-439
5 p.
|
artikel
|
| 46 |
Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric InGaAs GaAs n-type δ-doped quantum wells
|
Tabata, A.
|
|
1995
|
35 |
1-3 |
p. 401-405
5 p.
|
artikel
|
| 47 |
IV–VI compositional MQWs and SLs for optoelectronic applications
|
Tetyorkin, V.V.
|
|
1995
|
35 |
1-3 |
p. 76-79
4 p.
|
artikel
|
| 48 |
Low-dimensional transports in GaAs AlGaAs quasi-one-dimensional wires by a correlation field analysis of the phase coherent interferences
|
Ochiai, Y.
|
|
1995
|
35 |
1-3 |
p. 364-366
3 p.
|
artikel
|
| 49 |
Luminescence properties pf p-type thin CdS films prepared by laser ablation
|
Ullrich, B.
|
|
1995
|
35 |
1-3 |
p. 117-119
3 p.
|
artikel
|
| 50 |
Magnetotunnelling transport phenomena and quantum chaos in semiconductor heterostructures
|
Sheard, F.W.
|
|
1995
|
35 |
1-3 |
p. 239-244
6 p.
|
artikel
|
| 51 |
MBE and MOCVD growth of AlGaAsAlAsGaAs double barrier multiple quantum well infrared detector
|
Osotchan, T.
|
|
1995
|
35 |
1-3 |
p. 176-179
4 p.
|
artikel
|
| 52 |
Measurements of interface potentials in quantum wells
|
Mil'shtein, S.
|
|
1995
|
35 |
1-3 |
p. 299-302
4 p.
|
artikel
|
| 53 |
Migration of silicon atoms in planar-doped GaAs AlGaAs modulation doped fluid effect transistor heterostructures grown by molecular beam epitaxy
|
Carvalho, A.T.G.
|
|
1995
|
35 |
1-3 |
p. 149-155
7 p.
|
artikel
|
| 54 |
Modulation characteristics of AlAs GaAs double barrier quantum well resonant tunneling structure at microwave frequencies
|
Chu, H.Y.
|
|
1995
|
35 |
1-3 |
p. 446-448
3 p.
|
artikel
|
| 55 |
Nanocrystalline Si: a material constructed by Si quantum dots
|
Zhao, X.
|
|
1995
|
35 |
1-3 |
p. 467-471
5 p.
|
artikel
|
| 56 |
Native defects in gallium arsenide grown by molecular beam epitaxy and metallorganic chemical vapour deposition: effects of irradiation
|
Jorio, A.
|
|
1995
|
35 |
1-3 |
p. 160-165
6 p.
|
artikel
|
| 57 |
New hole negative differential resistance strained-layer device
|
Sheng, Hanyu
|
|
1995
|
35 |
1-3 |
p. 87-89
3 p.
|
artikel
|
| 58 |
Noise characteristics of electro-absorptive logic device utilizing asymmetric Fabry-Perot etalon structure in high optical power
|
Kwon, O.K.
|
|
1995
|
35 |
1-3 |
p. 64-67
4 p.
|
artikel
|
| 59 |
Non-linear generation of alternating current harmonics in quantum dot superlattice miniband transport
|
Lei, X.L.
|
|
1995
|
35 |
1-3 |
p. 256-258
3 p.
|
artikel
|
| 60 |
Novel high temperature metal organic chemical vapor deposition vertical rotating-disk reactor with multizone heating for GaN and related materials
|
Walker, R.
|
|
1995
|
35 |
1-3 |
p. 97-101
5 p.
|
artikel
|
| 61 |
Optical and structural characterizations for optimized growth of In0.52Al0.48As on InP substrates by molecular beam epitaxy
|
Yoon, S.F.
|
|
1995
|
35 |
1-3 |
p. 109-116
8 p.
|
artikel
|
| 62 |
Optimized design parameters of InGaAsInP quantum well lasers
|
Vaya, Pukhraj
|
|
1995
|
35 |
1-3 |
p. 17-23
7 p.
|
artikel
|
| 63 |
Photo-enhanced chemical vapour deposition of hydrogenated amorphous silicon carbon using an internal discharge lamp
|
Miyajima, S.
|
|
1995
|
35 |
1-3 |
p. 138-144
7 p.
|
artikel
|
| 64 |
Photo-Hall studies of modulation-doped field-effect trasistor heterostructures using (InAs) m (GaAs) n superlattice channels
|
Baeta Moreira, M.V.
|
|
1995
|
35 |
1-3 |
p. 391-395
5 p.
|
artikel
|
| 65 |
Photoluminescence in degenerate p-type GaAs layers grown by molecular beam epitaxy
|
Zhang, D.H.
|
|
1995
|
35 |
1-3 |
p. 449-453
5 p.
|
artikel
|
| 66 |
Photoluminescence of piezoelectric strained InGaAsGaAs multi-quantum well p-i-n structures
|
David, J.P.R.
|
|
1995
|
35 |
1-3 |
p. 42-46
5 p.
|
artikel
|
| 67 |
Photoluminescence properties of AlAs GaAs disordered superlattices with fixed GaAs or AlAs layer thickness
|
Uno, Kazuyuki
|
|
1995
|
35 |
1-3 |
p. 406-409
4 p.
|
artikel
|
| 68 |
Photoluminescence properties of AlGaP superlattices
|
Nabetani, Y.
|
|
1995
|
35 |
1-3 |
p. 454-458
5 p.
|
artikel
|
| 69 |
Photoreflectance investigations of semiconductor device structures
|
Soares, J.A.N.T.
|
|
1995
|
35 |
1-3 |
p. 267-272
6 p.
|
artikel
|
| 70 |
Preface
|
Henini, Mohamed
|
|
1995
|
35 |
1-3 |
p. x-xi
nvt p.
|
artikel
|
| 71 |
Proton implantation of Al x Ga 1 − x As GaAs resonant-tunnelling diode structures
|
Billen, K.
|
|
1995
|
35 |
1-3 |
p. 376-381
6 p.
|
artikel
|
| 72 |
Quantum interference effect in GaAs AlGaAs double quantum wells
|
Wang, Xinghua
|
|
1995
|
35 |
1-3 |
p. 372-375
4 p.
|
artikel
|
| 73 |
Quantum-size layered PbS C structures deposited by pulsed laser evaporation in vacuum
|
Il'in, V.I.
|
|
1995
|
35 |
1-3 |
p. 120-124
5 p.
|
artikel
|
| 74 |
Quantum transport and non-linear dynamics of interacting quantized fields and applications to nanoelectronics and optoelectronics
|
Rajagopal, A.K.
|
|
1995
|
35 |
1-3 |
p. 51-55
5 p.
|
artikel
|
| 75 |
Raman scattering in PbI2 clusters incorporated into zeolite cages
|
Tang, Z.K.
|
|
1995
|
35 |
1-3 |
p. 410-416
7 p.
|
artikel
|
| 76 |
Reactive ion etched quantum wire structures for laser applications
|
Gurevich, S.A.
|
|
1995
|
35 |
1-3 |
p. 47-50
4 p.
|
artikel
|
| 77 |
Real-time monitoring of heteroepitaxial growth processes on the silicon(001) surface by p-polarized reflectance spectroscopy
|
Bachmann, Klaus J.
|
|
1995
|
35 |
1-3 |
p. 472-478
7 p.
|
artikel
|
| 78 |
Role of the InAs monomolecular plane inserted in bulk GaAs
|
Tit, Nacir
|
|
1995
|
35 |
1-3 |
p. 386-390
5 p.
|
artikel
|
| 79 |
Saturation of the non-linear absorption in n-i-p-i multiple quantum well structures
|
Xiaohong, Tang
|
|
1995
|
35 |
1-3 |
p. 72-75
4 p.
|
artikel
|
| 80 |
Selective wet etching of a GaAs Al x Ga 1−x As heterostructure with citric acid-hydrogen peroxide solutions for pseudomorphic GaAs/AlxGa1−xAs/InyGa1−yAs heterojunction field effect transister fabrication
|
Lee, H.J.
|
|
1995
|
35 |
1-3 |
p. 230-233
4 p.
|
artikel
|
| 81 |
Self-consistent calculation of electronic states in asymmetric double barrier structure
|
Song, Aimin
|
|
1995
|
35 |
1-3 |
p. 367-371
5 p.
|
artikel
|
| 82 |
Self-organized InGaAs quantum disk lasers
|
Temmyo, Jiro
|
|
1995
|
35 |
1-3 |
p. 7-11
5 p.
|
artikel
|
| 83 |
Shape effects of the conductance of a quantum ballistic constriction in a two-dimensional electron gas
|
Chung, Moon Sung
|
|
1995
|
35 |
1-3 |
p. 440-445
6 p.
|
artikel
|
| 84 |
Side-gated GaAs AlGaAs double barrier resonant tunnelling diodes formed by patterned substrate regrowth
|
Quierin, M.A.
|
|
1995
|
35 |
1-3 |
p. 198-202
5 p.
|
artikel
|
| 85 |
Single heterojunction structures for acoustic charge transfer devices
|
Hayden, R.K.
|
|
1995
|
35 |
1-3 |
p. 80-86
7 p.
|
artikel
|
| 86 |
Spontaneous anisotropic chemical etching as a nanostructure surface modification method for the AIIIBV semiconductors
|
Gorbach, T.Ya.
|
|
1995
|
35 |
1-3 |
p. 224-229
6 p.
|
artikel
|
| 87 |
State-of-the-art control of growth of superlattices and quantum wells
|
Schmitz, D.
|
|
1995
|
35 |
1-3 |
p. 102-108
7 p.
|
artikel
|
| 88 |
Subject index of volume 35
|
|
|
1995
|
35 |
1-3 |
p. 501-507
7 p.
|
artikel
|
| 89 |
Switching characteristics of nonbiased optical bistability in asymmetric Fabry-Perot S-SEEDs made of extremely shallow quantum well structures
|
Kim, K.
|
|
1995
|
35 |
1-3 |
p. 24-28
5 p.
|
artikel
|
| 90 |
Temperature dependence of luminescence in ZnSe
|
Yoshino, Kenji
|
|
1995
|
35 |
1-3 |
p. 68-71
4 p.
|
artikel
|
| 91 |
The control and modification of metal-semiconductor interfaces using multi quantum barriers
|
Kestle, A.
|
|
1995
|
35 |
1-3 |
p. 145-148
4 p.
|
artikel
|
| 92 |
The effects of In segregation on the emission properties of Inx Ga 1 − x As GaAs quantum wells
|
Yu, Haiping
|
|
1995
|
35 |
1-3 |
p. 129-132
4 p.
|
artikel
|
| 93 |
The electronic structure and luminescence properties of porous silicon and silicon nanoclusters
|
Gavartin, J.L.
|
|
1995
|
35 |
1-3 |
p. 459-462
4 p.
|
artikel
|
| 94 |
The influence of exciton migration on photoluminescence lifetime in growth-interrupted GaAs AlAs single quantum wells
|
Yu, Haiping
|
|
1995
|
35 |
1-3 |
p. 125-128
4 p.
|
artikel
|
| 95 |
Theoretical study of resonant tunneling in symmetrical rectangular triple-barrier structures with deep wells
|
Yamamoto, Hiroaki
|
|
1995
|
35 |
1-3 |
p. 421-428
8 p.
|
artikel
|
| 96 |
Theory of novel nonlinear quantum transport effects in resonant tunneling structures
|
Buot, F.A.
|
|
1995
|
35 |
1-3 |
p. 303-317
15 p.
|
artikel
|
| 97 |
Thermalization effects of low dimensional excitons in quantum wires and quantum wells
|
Akiyama, Hidefumi
|
|
1995
|
35 |
1-3 |
p. 284-287
4 p.
|
artikel
|
| 98 |
The study of GaAs InGaAs δ-doping resonant interband tunneling diode
|
Yang, C.C.
|
|
1995
|
35 |
1-3 |
p. 259-262
4 p.
|
artikel
|
| 99 |
Top sawtooth grating for GaAs/AlGaAs quantum well IR detectors
|
Chi, Gou-Chung
|
|
1995
|
35 |
1-3 |
p. 56-58
3 p.
|
artikel
|
| 100 |
Vertical electron transport in semiconductor superlattices Monte Carlo simulation
|
Voves, J.
|
|
1995
|
35 |
1-3 |
p. 417-420
4 p.
|
artikel
|
| 101 |
Visible vertical cavity surface emitting lasers at λ < 650 nm
|
Chen, Y.H.
|
|
1995
|
35 |
1-3 |
p. 12-16
5 p.
|
artikel
|
| 102 |
Zinc doped polycrystalline CdSe films for solar energy conversion
|
Ramrakhiani, Meera
|
|
1995
|
35 |
1-3 |
p. 493-496
4 p.
|
artikel
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