nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Ab initio studies of single-height Si(001) steps
|
Bogusławski, R. |
|
1995 |
30 |
2-3 |
p. 167-173 7 p. |
artikel |
2 |
Atomic force microscopy and scanning tunneling microscopy studies of large-scale unstable growth formed during GaAs(001) homoepitaxy
|
Orme, C. |
|
1995 |
30 |
2-3 |
p. 143-148 6 p. |
artikel |
3 |
Atomic structure of surfactant monolayers and its role in epitaxial growth
|
Kaxiras, Efthimios |
|
1995 |
30 |
2-3 |
p. 175-186 12 p. |
artikel |
4 |
Author index of volume 30
|
|
|
1995 |
30 |
2-3 |
p. 205- 1 p. |
artikel |
5 |
Fabrication and application of relaxed buffer layers
|
Xie, Y.H. |
|
1995 |
30 |
2-3 |
p. 201-203 3 p. |
artikel |
6 |
In-situ X-ray studies of organometallic vapor phase epitaxy growth
|
Fuoss, P.H. |
|
1995 |
30 |
2-3 |
p. 99-108 10 p. |
artikel |
7 |
Island formation in Ge/Si epitaxy
|
Eaglesham, D.J. |
|
1995 |
30 |
2-3 |
p. 197-200 4 p. |
artikel |
8 |
Kinetic roughness in epitaxy (experimental)
|
Cotta, M.A. |
|
1995 |
30 |
2-3 |
p. 137-142 6 p. |
artikel |
9 |
Kinetics of epitaxial growth and roughening
|
Family, Fereydoon |
|
1995 |
30 |
2-3 |
p. 149-166 18 p. |
artikel |
10 |
Mechanisms of layer growth during molecular beam epitaxy of semiconductor films
|
Joyce, B.A. |
|
1995 |
30 |
2-3 |
p. 87-97 11 p. |
artikel |
11 |
Observation and analysis of epitaxial growth with reflectance-difference spectroscopy
|
Aspnes, D.E. |
|
1995 |
30 |
2-3 |
p. 109-119 11 p. |
artikel |
12 |
Preface
|
Mahajan, S. |
|
1995 |
30 |
2-3 |
p. ix- 1 p. |
artikel |
13 |
Role of steps in epitaxial growth
|
Pond, K. |
|
1995 |
30 |
2-3 |
p. 121-125 5 p. |
artikel |
14 |
Scanning tunneling microscopy studies of the GaAs(001) surface and the nucleation of ZnSe on GaAs(001)
|
Pashley, M.D. |
|
1995 |
30 |
2-3 |
p. 73-80 8 p. |
artikel |
15 |
Structure and formation energy of steps on the GaAs(001)-2 × 4 surface
|
Zhang, S.B. |
|
1995 |
30 |
2-3 |
p. 127-136 10 p. |
artikel |
16 |
Structure and thermodynamic stability of GaAs(001) surfaces
|
Northrup, John E. |
|
1995 |
30 |
2-3 |
p. 81-86 6 p. |
artikel |
17 |
Subject index of volume 30
|
|
|
1995 |
30 |
2-3 |
p. 207-209 3 p. |
artikel |
18 |
Two-dimensional phase separation and surface-reconstruction driven atomic ordering in mixed III–V layers
|
Mahajan, S. |
|
1995 |
30 |
2-3 |
p. 187-196 10 p. |
artikel |