| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Behaviour of Mn in GaSb grown by the Bridgman method
|
Adhikari, T.
|
|
1994
|
27 |
1 |
p. 47-51
5 p.
|
artikel
|
| 2 |
Editorial Board
|
|
|
1994
|
27 |
1 |
p. iii-
1 p.
|
artikel
|
| 3 |
Effect of temperature on the electrical resistivity of YBa2Cu3O7−x filled polyethylene
|
Du, Wei-fang
|
|
1994
|
27 |
1 |
p. 13-16
4 p.
|
artikel
|
| 4 |
High resolution dry etching of III–V semiconductor materials using magnetically enhanced discharges
|
Pearton, S.J.
|
|
1994
|
27 |
1 |
p. 61-68
8 p.
|
artikel
|
| 5 |
Magnetic properties of CoNiMgN thin films
|
Georgescu, V.
|
|
1994
|
27 |
1 |
p. 17-21
5 p.
|
artikel
|
| 6 |
Near-IR-excited Raman scattering in graphitic materials
|
Galluzzi, F.
|
|
1994
|
27 |
1 |
p. L1-L3
nvt p.
|
artikel
|
| 7 |
Optical emission end point detection for reactive ion etching of Si/SiGe structures
|
Richter, H.H.
|
|
1994
|
27 |
1 |
p. 39-45
7 p.
|
artikel
|
| 8 |
Persistent spectral hole burning in semiconductor microcrystals
|
Masumoto, Yasuaki
|
|
1994
|
27 |
1 |
p. L5-L9
nvt p.
|
artikel
|
| 9 |
Preparation and characterization of In4Se3 films
|
Julien, C.
|
|
1994
|
27 |
1 |
p. 53-60
8 p.
|
artikel
|
| 10 |
Reactivity of BaSnO3 as additive agent with the 211 and 123 yttrium barium cuprates
|
Delamare, M.P.
|
|
1994
|
27 |
1 |
p. 29-38
10 p.
|
artikel
|
| 11 |
Redistribution of atoms in the near-surface layer of multielemental solids related to variations of the ion beam parameters
|
Galdikas, A.
|
|
1994
|
27 |
1 |
p. 23-28
6 p.
|
artikel
|
| 12 |
The investigation of growth characteristics of single quantum wells grown on (311) GaAs substrates
|
Zhang, Fujia
|
|
1994
|
27 |
1 |
p. 7-12
6 p.
|
artikel
|
| 13 |
Vickers microhardness of semiconductor CuInSe2
|
Kotkata, M.F.
|
|
1994
|
27 |
1 |
p. 1-5
5 p.
|
artikel
|
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