| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab-initio calculations of hyperfine fields for chalcogen point defects and defect pairs in silicon: Identification of the pair atomic structure
|
Overhof, H.
|
|
1989
|
232-235 |
1-4 |
p. 315-319
5 p.
|
artikel
|
| 2 |
Acknowledgments
|
|
|
1992
|
232-235 |
1-4 |
p. viii-
1 p.
|
artikel
|
| 3 |
A computational study into the origin of SiC polytypes
|
Heine, V.
|
|
1992
|
232-235 |
1-4 |
p. 55-60
6 p.
|
artikel
|
| 4 |
Activation and gettering of intrinsic metallic impurities during rapid thermal processing
|
Hartiti, B.
|
|
1989
|
232-235 |
1-4 |
p. 129-132
4 p.
|
artikel
|
| 5 |
A hydrogen-carbon related deep donor in crystalline n-Si:C
|
Endrös, A.
|
|
1989
|
232-235 |
1-4 |
p. 35-39
5 p.
|
artikel
|
| 6 |
An analysis of the oxygen condensation processes in silicon by laser-scanning tomography
|
Gall, P.
|
|
1989
|
232-235 |
1-4 |
p. 483-487
5 p.
|
artikel
|
| 7 |
A photoluminescence study of zinc-implanted silicon
|
Henry, M.O.
|
|
1989
|
232-235 |
1-4 |
p. 201-204
4 p.
|
artikel
|
| 8 |
Applications exploiting the extreme properties of diamonds
|
Seal, M.
|
|
1992
|
232-235 |
1-4 |
p. 167-171
5 p.
|
artikel
|
| 9 |
Applications of SiC thin films in low temperature devices
|
Borisenko, I.Yu.
|
|
1992
|
232-235 |
1-4 |
p. 117-119
3 p.
|
artikel
|
| 10 |
A study of carbon-implanted silicon for light-emitting diode fabrication
|
Canham, L.T.
|
|
1989
|
232-235 |
1-4 |
p. 95-99
5 p.
|
artikel
|
| 11 |
A study of growth defects in seeded and unseeded silicon on insulator layers
|
Williams, D.A.
|
|
1989
|
232-235 |
1-4 |
p. 423-427
5 p.
|
artikel
|
| 12 |
A uniaxial stress study of a copper-related photoluminescence band in silicon
|
McGuigan, K.G.
|
|
1989
|
232-235 |
1-4 |
p. 269-272
4 p.
|
artikel
|
| 13 |
Author index
|
|
|
1989
|
232-235 |
1-4 |
p. 497-498
2 p.
|
artikel
|
| 14 |
Author index of volume 11
|
|
|
1992
|
232-235 |
1-4 |
p. 373-374
2 p.
|
artikel
|
| 15 |
Bonding in clusters and condensed matter: The role of electron correlations
|
Friedel, J.
|
|
1989
|
232-235 |
1-4 |
p. 493-495
3 p.
|
artikel
|
| 16 |
Characterization of 3CSiC epilayers by pulsed electron spin resonance
|
Okumura, H.
|
|
1992
|
232-235 |
1-4 |
p. 31-34
4 p.
|
artikel
|
| 17 |
Characterization of macroscopic defects in silicon after processing for CMOS and bipolar circuits
|
Steeds, J.W.
|
|
1989
|
232-235 |
1-4 |
p. 373-376
4 p.
|
artikel
|
| 18 |
Characterization studies of low pressure chemical vapour deposition SICARB layers for wide band gap emitters
|
Pickering, C.
|
|
1992
|
232-235 |
1-4 |
p. 131-137
7 p.
|
artikel
|
| 19 |
Chemical vapor deposition of β-SiC on silicon-on-sapphire and silicon-on-insulator substrates
|
Pazik, J.C.
|
|
1992
|
232-235 |
1-4 |
p. 125-129
5 p.
|
artikel
|
| 20 |
Chromium diffusivity in boron-doped silicon: Reassessment of the activation energy from low temperature measurements
|
Zhu, J.
|
|
1989
|
232-235 |
1-4 |
p. 185-188
4 p.
|
artikel
|
| 21 |
Composition and structure of epitaxial β-SiC films grown by reactive magnetron sputtering on Si(100) substrates
|
Wahab, Q.
|
|
1992
|
232-235 |
1-4 |
p. 61-66
6 p.
|
artikel
|
| 22 |
Correlation of thermal history and thermal donor formation
|
Goth, D.
|
|
1989
|
232-235 |
1-4 |
p. 223-229
7 p.
|
artikel
|
| 23 |
Damage-free reactive ion etching of silicon in NF3 at low temperature
|
Konuma, M.
|
|
1989
|
232-235 |
1-4 |
p. 265-268
4 p.
|
artikel
|
| 24 |
Deep-level transient spectroscopy characterization of metallic contamination during plasma resist stripping
|
Joubert, O.
|
|
1989
|
232-235 |
1-4 |
p. 467-470
4 p.
|
artikel
|
| 25 |
Defect-related gate oxide breakdown
|
Bergholz, W.
|
|
1989
|
232-235 |
1-4 |
p. 359-366
8 p.
|
artikel
|
| 26 |
Defects and solidification front morphologies in lamp zone-melting-recrystallized silicon-on-insulator films
|
Dutartre, D.
|
|
1989
|
232-235 |
1-4 |
p. 211-216
6 p.
|
artikel
|
| 27 |
Defects created by hydrogen implantation into silicon
|
Hartung, J.
|
|
1989
|
232-235 |
1-4 |
p. 47-50
4 p.
|
artikel
|
| 28 |
Development of a scanning minority carrier transient spectroscopy method: Application to the study of gold diffusion in a silicon bicrystal
|
Heiser, T.
|
|
1989
|
232-235 |
1-4 |
p. 479-482
4 p.
|
artikel
|
| 29 |
Diamond and diamond simulants as studied by micro-Raman spectroscopy
|
Huong, Pham V.
|
|
1992
|
232-235 |
1-4 |
p. 235-242
8 p.
|
artikel
|
| 30 |
Diamond electronic devices—can they outperform silicon or GaAs?
|
Collins, Alan T.
|
|
1992
|
232-235 |
1-4 |
p. 257-263
7 p.
|
artikel
|
| 31 |
Diamond-like carbon films deposited in a dual microwave-radio-frequency plasma
|
Küttel, O.M.
|
|
1992
|
232-235 |
1-4 |
p. 321-324
4 p.
|
artikel
|
| 32 |
Diffusion of 13C and 29Si implanted ions in SiC
|
Eveno, P.
|
|
1992
|
232-235 |
1-4 |
p. 331-336
6 p.
|
artikel
|
| 33 |
Dislocations and mechanical properties of silicon
|
Sumino, Koji
|
|
1989
|
232-235 |
1-4 |
p. 335-341
7 p.
|
artikel
|
| 34 |
Dispersive microwave transient spectroscopy of deep levels in semiconductors
|
Huber, D.
|
|
1989
|
232-235 |
1-4 |
p. 489-492
4 p.
|
artikel
|
| 35 |
Donor formation in silicon owing to ion implantation of the rare earth metal erbium
|
Widdershoven, F.P.
|
|
1989
|
232-235 |
1-4 |
p. 71-74
4 p.
|
artikel
|
| 36 |
Dry etching damage of silicon: A review
|
Oehrlein, Gottlieb S.
|
|
1989
|
232-235 |
1-4 |
p. 441-450
10 p.
|
artikel
|
| 37 |
Editorial Board
|
|
|
1992
|
232-235 |
1-4 |
p. iii-
1 p.
|
artikel
|
| 38 |
Editorial Board
|
|
|
1989
|
232-235 |
1-4 |
p. iii-
1 p.
|
artikel
|
| 39 |
Effect of deformation-induced defects on the Fermi level position at recombination centers in n-Si
|
Pohoryles, B.
|
|
1989
|
232-235 |
1-4 |
p. 139-141
3 p.
|
artikel
|
| 40 |
Effect of N+ ion implantation on the oxidation of silicon and metal-oxide-semiconductor characteristics
|
Kudo, Kazuhiro
|
|
1989
|
232-235 |
1-4 |
p. 383-386
4 p.
|
artikel
|
| 41 |
Effect of oxygen and carbon segregation on the electrical properties of grain boundaries in silicon
|
Pizzini, S.
|
|
1989
|
232-235 |
1-4 |
p. 353-358
6 p.
|
artikel
|
| 42 |
Effect of post-metallization annealing on W/Cr-metallized silicon junctions
|
Gonchond, J.P.
|
|
1989
|
232-235 |
1-4 |
p. 331-334
4 p.
|
artikel
|
| 43 |
Effect of sputter-etching conditions on the barrier characteristics and the process-induced defects in (Ti-W)/Si Schottky diodes
|
Bauza, D.
|
|
1989
|
232-235 |
1-4 |
p. 387-391
5 p.
|
artikel
|
| 44 |
Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon
|
Henry, A.
|
|
1989
|
232-235 |
1-4 |
p. 147-151
5 p.
|
artikel
|
| 45 |
Effects of surface etching before metal contact formation on carbon/diamond-silicon heterojunction diode characteristics
|
Chan, K.K.
|
|
1992
|
232-235 |
1-4 |
p. 295-298
4 p.
|
artikel
|
| 46 |
Electron and nuclear structural characterization of natural, synthetic, homoepitaxial and polycrystalline low pressure chemically vapour-deposited diamond
|
Maguire, H.G.
|
|
1992
|
232-235 |
1-4 |
p. 243-248
6 p.
|
artikel
|
| 47 |
Electron channelling radiation: first steps towards a bright and tunable X-ray source
|
Richter, Achim
|
|
1992
|
232-235 |
1-4 |
p. 139-147
9 p.
|
artikel
|
| 48 |
Electronic behaviour of decorated stacking faults in silicon
|
Peaker, A.R.
|
|
1989
|
232-235 |
1-4 |
p. 123-128
6 p.
|
artikel
|
| 49 |
Electronic defects induced in silicon by SF6 plasma etching
|
Belkacem, A.
|
|
1989
|
232-235 |
1-4 |
p. 451-455
5 p.
|
artikel
|
| 50 |
Electronic properties of disordered SiC materials
|
Chauvet, O.
|
|
1992
|
232-235 |
1-4 |
p. 303-306
4 p.
|
artikel
|
| 51 |
Electronic structure of laser-synthesized SiC by photoelectron and soft X-ray spectroscopy
|
Driss Khodja, M.
|
|
1992
|
232-235 |
1-4 |
p. 97-101
5 p.
|
artikel
|
| 52 |
Electron paramagnetic resonance study of new centres in SiC
|
Stallinga, P.
|
|
1992
|
232-235 |
1-4 |
p. 35-38
4 p.
|
artikel
|
| 53 |
Electron spin resonance studies of transition metal deep level impurities in SiC
|
Maier, K.
|
|
1992
|
232-235 |
1-4 |
p. 27-30
4 p.
|
artikel
|
| 54 |
Enhanced thermal donor formation and oxygen diffusion in silicon exposed to a hydrogen plasma
|
Murray, R.
|
|
1989
|
232-235 |
1-4 |
p. 299-302
4 p.
|
artikel
|
| 55 |
Epitaxial growth of diamond-like films on Si(100) by pulsed-laser evaporation of graphite
|
Martin-Gago, J.A.
|
|
1992
|
232-235 |
1-4 |
p. 337-340
4 p.
|
artikel
|
| 56 |
Epitaxially grown β-SiC on Si(100) and Si(111) substrates by low pressure chemical vapour deposition
|
Just, Wolfgang
|
|
1992
|
232-235 |
1-4 |
p. 317-319
3 p.
|
artikel
|
| 57 |
Epitaxial silicon chemical vapor deposition below atmospheric pressure
|
Regolini, J.L.
|
|
1989
|
232-235 |
1-4 |
p. 407-415
9 p.
|
artikel
|
| 58 |
Epitaxial silicon growth on porous silicon by reduced pressure, low temperature chemical vapour deposition
|
Oules, C.
|
|
1989
|
232-235 |
1-4 |
p. 435-439
5 p.
|
artikel
|
| 59 |
Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system
|
Anikin, M.M.
|
|
1992
|
232-235 |
1-4 |
p. 113-115
3 p.
|
artikel
|
| 60 |
Fast-diffusing defects induced by copper in silicon
|
Prescha, Th.
|
|
1989
|
232-235 |
1-4 |
p. 79-82
4 p.
|
artikel
|
| 61 |
Formation of buried CoSi2 layers by ion implantation, studied by Mössbauer spectroscopy and rutherford backscattering spectroscopy
|
Vantomme, A.
|
|
1989
|
232-235 |
1-4 |
p. 157-161
5 p.
|
artikel
|
| 62 |
Four-vacancy damage clusters in neutron-irradiated silicon
|
Sienkiewicz, A.
|
|
1989
|
232-235 |
1-4 |
p. 247-250
4 p.
|
artikel
|
| 63 |
Gold diffusion in silicon: Enhanced substitutional gold formation by rhodium doping
|
Czaputa, R.
|
|
1989
|
232-235 |
1-4 |
p. 133-137
5 p.
|
artikel
|
| 64 |
Growth and properties of CVD-SiC layers using tetramethylsilane
|
Figueras, A.
|
|
1992
|
232-235 |
1-4 |
p. 83-87
5 p.
|
artikel
|
| 65 |
Growth of SiC on silicon in a low pressure vertical reactor
|
Irvine, K.G.
|
|
1992
|
232-235 |
1-4 |
p. 93-96
4 p.
|
artikel
|
| 66 |
Hall effect spectroscopy of thermal donors in silicon films synthesized by oxygen implantation
|
Sicart, J.
|
|
1989
|
232-235 |
1-4 |
p. 163-167
5 p.
|
artikel
|
| 67 |
Hard-photon emission and shower formation when multigigaelectronvolt electrons penetrate single crystals near axial directions: strong-field effects
|
Uggerhøj, E.
|
|
1992
|
232-235 |
1-4 |
p. 159-166
8 p.
|
artikel
|
| 68 |
Heavy metal contamination during integrated-circuit processing: Measurements of contamination level and internal gettering efficiency by surface photovoltage
|
Jastrzebski, L.
|
|
1989
|
232-235 |
1-4 |
p. 113-121
9 p.
|
artikel
|
| 69 |
High energy ion implantation into diamond and cubic boron nitride
|
Zaitsev, Alexander M.
|
|
1992
|
232-235 |
1-4 |
p. 179-190
12 p.
|
artikel
|
| 70 |
High quality silicon-on-insulator substrates by implanted oxygen ions
|
Belz, J.
|
|
1989
|
232-235 |
1-4 |
p. 429-433
5 p.
|
artikel
|
| 71 |
Hydrogenation of shallow and deep levels in silicon
|
Jaworowski, A.E.
|
|
1989
|
232-235 |
1-4 |
p. 51-55
5 p.
|
artikel
|
| 72 |
Hydrogen in silicon: State, reactivity and evolution after ion implantation
|
Cerofolini, G.F.
|
|
1989
|
232-235 |
1-4 |
p. 19-24
6 p.
|
artikel
|
| 73 |
Hydrogen passivation and thermal reactivation of zinc double acceptors in silicon
|
Stolz, P
|
|
1989
|
232-235 |
1-4 |
p. 31-34
4 p.
|
artikel
|
| 74 |
Hydrogen-related electron traps in proton-bombarded float zone silicon
|
Svensson, B.G.
|
|
1989
|
232-235 |
1-4 |
p. 285-289
5 p.
|
artikel
|
| 75 |
Hydrogen-related vibrations in crystalline silicon
|
Deák, P.
|
|
1989
|
232-235 |
1-4 |
p. 57-62
6 p.
|
artikel
|
| 76 |
Increase of low-frequency-noise-generating defects in today's CMOS and BiCMOS technologies
|
Murray, D.C.
|
|
1989
|
232-235 |
1-4 |
p. 367-372
6 p.
|
artikel
|
| 77 |
In-diffusion of nitrogen from N2 ambient and its aggregation at lattice imperfections in silicon crystals
|
Itoh, T.
|
|
1989
|
232-235 |
1-4 |
p. 309-313
5 p.
|
artikel
|
| 78 |
Influence of deposition parameters on the properties of SiC films
|
Vlaskina, S.I.
|
|
1992
|
232-235 |
1-4 |
p. 67-68
2 p.
|
artikel
|
| 79 |
Influence of silicon on the physical properties of diamond-like films
|
Demichelis, F.
|
|
1992
|
232-235 |
1-4 |
p. 313-316
4 p.
|
artikel
|
| 80 |
Influence of surface energy on the growth of 6H- and 4H-SiC polytypes by sublimation
|
Stein, R.A.
|
|
1992
|
232-235 |
1-4 |
p. 69-71
3 p.
|
artikel
|
| 81 |
Interdiffusion in amorphous Si/SiC multilayers
|
Kolodzey, J.
|
|
1992
|
232-235 |
1-4 |
p. 43-46
4 p.
|
artikel
|
| 82 |
Investigation on the electrically inactive antimony at thermal equilibrium in silicon
|
Angelucci, R.
|
|
1989
|
232-235 |
1-4 |
p. 243-245
3 p.
|
artikel
|
| 83 |
Ion beam studies of the static and dynamic properties of dopants in diamond
|
Derry, T.E.
|
|
1992
|
232-235 |
1-4 |
p. 249-256
8 p.
|
artikel
|
| 84 |
Iron diffusivity measurement with deep-level transient spectroscopy at room temperature
|
Ryoo, K.
|
|
1989
|
232-235 |
1-4 |
p. 251-255
5 p.
|
artikel
|
| 85 |
Isoelectronic bound exciton photoluminescence from a metastable defect in sulphur-doped silicon
|
Singh, Mandeep
|
|
1989
|
232-235 |
1-4 |
p. 303-307
5 p.
|
artikel
|
| 86 |
Kinetics of silicon amorphization by N+ implantation: Dose rate and substrate temperature effects
|
Claverie, A.
|
|
1989
|
232-235 |
1-4 |
p. 205-209
5 p.
|
artikel
|
| 87 |
LBIC measurements of the recombining activity of dislocations in float zone silicon
|
Mariani, J.L.
|
|
1989
|
232-235 |
1-4 |
p. 347-352
6 p.
|
artikel
|
| 88 |
Limits to diamond and diamond-like material properties produced under metastable conditions
|
Kamo, Mutsukazu
|
|
1992
|
232-235 |
1-4 |
p. 191-196
6 p.
|
artikel
|
| 89 |
Limits to quality and size of diamond and cubic boron nitride synthesized under high pressure, high temperature conditions
|
Caveney, R.J.
|
|
1992
|
232-235 |
1-4 |
p. 197-205
9 p.
|
artikel
|
| 90 |
Luminescence from transition metal centres in silicon doped with silver and nickel
|
Nazare, M.H.
|
|
1989
|
232-235 |
1-4 |
p. 273-276
4 p.
|
artikel
|
| 91 |
Mapping of electrically active defects in silicon by optical-beam-induced reflectance
|
Carver, Gary E.
|
|
1989
|
232-235 |
1-4 |
p. 471-477
7 p.
|
artikel
|
| 92 |
Materials modification: doping of diamond by ion implantation
|
Prins, Johan F.
|
|
1992
|
232-235 |
1-4 |
p. 219-226
8 p.
|
artikel
|
| 93 |
Measurement of electro-optical properties of β-SiC on sapphire substrates and free-standing films
|
Tang, X.
|
|
1992
|
232-235 |
1-4 |
p. 39-42
4 p.
|
artikel
|
| 94 |
Megaelectronvolt ion irradiation effects in amorphous carbon: the roles of the CH and CC bonds
|
Tombrello, T.A.
|
|
1992
|
232-235 |
1-4 |
p. 207-209
3 p.
|
artikel
|
| 95 |
Metallurgical study of SiCNiCr plasma-sprayed coatings
|
Alonso, F.
|
|
1992
|
232-235 |
1-4 |
p. 279-283
5 p.
|
artikel
|
| 96 |
Microscopic aspects of oxygen precipitation in silicon
|
Ponce, F.A.
|
|
1989
|
232-235 |
1-4 |
p. 11-17
7 p.
|
artikel
|
| 97 |
Modelling of recombination activity and passivation by hydrogen of dislocations in silicon wafers
|
El Ghitani, H.
|
|
1989
|
232-235 |
1-4 |
p. 153-156
4 p.
|
artikel
|
| 98 |
1.54 μm photoluminescence of erbium-implanted silicon
|
Moutonnet, D.
|
|
1989
|
232-235 |
1-4 |
p. 75-77
3 p.
|
artikel
|
| 99 |
Near-surface electrical effects of oxidation and hydrogenation in silicon
|
Delidais, I.
|
|
1989
|
232-235 |
1-4 |
p. 277-280
4 p.
|
artikel
|
| 100 |
New photoluminescence lines in selenium-doped silicon
|
Henry, A.
|
|
1989
|
232-235 |
1-4 |
p. 261-264
4 p.
|
artikel
|
| 101 |
Nitrogen-containing defects in diamond: experimental data and molecular orbital linear-combination-of-atomic-orbitals
|
Uljashin, A.G.
|
|
1992
|
232-235 |
1-4 |
p. 359-362
4 p.
|
artikel
|
| 102 |
One-electron states induced by 3d transition metal impurities in diamond
|
Alves, H.W.L.
|
|
1992
|
232-235 |
1-4 |
p. 285-288
4 p.
|
artikel
|
| 103 |
On the fracture statistics of polycrystalline α-SiC at room and high temperature
|
Charif, A.
|
|
1992
|
232-235 |
1-4 |
p. 299-302
4 p.
|
artikel
|
| 104 |
Optical absorption by platinum in crystalline silicon
|
Davies, Gordon
|
|
1989
|
232-235 |
1-4 |
p. 173-177
5 p.
|
artikel
|
| 105 |
Optical absorption coefficients in a-Si1 − x C x:H
|
Öktu, Ö.
|
|
1992
|
232-235 |
1-4 |
p. 47-50
4 p.
|
artikel
|
| 106 |
Optical bistability in II–VI compounds
|
Klingshirn, C.
|
|
1992
|
232-235 |
1-4 |
p. 11-20
10 p.
|
artikel
|
| 107 |
Optical studies of donors and acceptors in cubic SiC
|
Freitas Jr., J.A.
|
|
1992
|
232-235 |
1-4 |
p. 21-25
5 p.
|
artikel
|
| 108 |
Pairing of acceptors with interstitial donors in silicon and germanium
|
Deicher, M.
|
|
1989
|
232-235 |
1-4 |
p. 25-29
5 p.
|
artikel
|
| 109 |
Perturbed angular correlation spectroscopy of acceptor-donor pairs in silicon, germanium and GaAs
|
Achtziger, N.
|
|
1989
|
232-235 |
1-4 |
p. 169-172
4 p.
|
artikel
|
| 110 |
Perturbed angular correlation spectroscopy of hydrogen-passivated indium acceptors in silicon
|
Baurichter, A.
|
|
1989
|
232-235 |
1-4 |
p. 281-284
4 p.
|
artikel
|
| 111 |
Photoluminescence of defects introduced by deuterium plasmas in silicon
|
Weman, H.
|
|
1989
|
232-235 |
1-4 |
p. 461-465
5 p.
|
artikel
|
| 112 |
Photoluminescence study of reactive-ion-etched silicon: A new boron-related defect
|
Harris, C.
|
|
1989
|
232-235 |
1-4 |
p. 457-460
4 p.
|
artikel
|
| 113 |
Picosecond optical measurements of the properties of heavily carbon-implanted silicon
|
Moss, Steven C.
|
|
1992
|
232-235 |
1-4 |
p. 369-372
4 p.
|
artikel
|
| 114 |
Plasma-enhanced chemical vapour deposition of SiC layers using a liquid source
|
Bielan, Sabine
|
|
1992
|
232-235 |
1-4 |
p. 289-293
5 p.
|
artikel
|
| 115 |
Polycrystalline diamone for optical thin films
|
Müller-Sebert, W.
|
|
1992
|
232-235 |
1-4 |
p. 173-178
6 p.
|
artikel
|
| 116 |
Precipitation at grain boundaries in silicon
|
Hamet, J.F.
|
|
1989
|
232-235 |
1-4 |
p. 143-145
3 p.
|
artikel
|
| 117 |
Preface
|
Gippius, A.A.
|
|
1992
|
232-235 |
1-4 |
p. v-
1 p.
|
artikel
|
| 118 |
Preface
|
|
|
1989
|
232-235 |
1-4 |
p. v-vi
nvt p.
|
artikel
|
| 119 |
Preparation and optical properties of wide gap II–VI compounds
|
Gebhardt, W.
|
|
1992
|
232-235 |
1-4 |
p. 1-9
9 p.
|
artikel
|
| 120 |
Preparation of crystalline SiC thin films by plasma-enhanced chemical vapour deposition and by ion beam modification of silicon
|
Derst, G.
|
|
1992
|
232-235 |
1-4 |
p. 79-82
4 p.
|
artikel
|
| 121 |
Processing effects on the electrical properties of defects in silicon
|
Castaldini, A.
|
|
1989
|
232-235 |
1-4 |
p. 343-346
4 p.
|
artikel
|
| 122 |
Prospects for new applications of diamond produced by stable and metastable synthesis
|
Jones, B.L.
|
|
1992
|
232-235 |
1-4 |
p. 149-157
9 p.
|
artikel
|
| 123 |
p-Type semiconducting structures in diamond implanted with boron ions
|
Denisenko, A.V.
|
|
1992
|
232-235 |
1-4 |
p. 273-277
5 p.
|
artikel
|
| 124 |
Quenched-in, fast-diffusing defects in silicon studied by the perturbed angular correlation method
|
Reislöhner, U.
|
|
1989
|
232-235 |
1-4 |
p. 83-86
4 p.
|
artikel
|
| 125 |
Radiative recombination channels due to hydrogen in crystalline silicon
|
Canham, L.T.
|
|
1989
|
232-235 |
1-4 |
p. 41-45
5 p.
|
artikel
|
| 126 |
Raman spectra and electrical conductivity of glassy carbon
|
Soukup, L.
|
|
1992
|
232-235 |
1-4 |
p. 355-357
3 p.
|
artikel
|
| 127 |
Recent developments in ion implantation in silicon
|
Pals, J.A.
|
|
1989
|
232-235 |
1-4 |
p. 87-94
8 p.
|
artikel
|
| 128 |
Reduction of process-induced defects in power devices
|
Schulze, H.J.
|
|
1989
|
232-235 |
1-4 |
p. 377-381
5 p.
|
artikel
|
| 129 |
Regrowth of indium-implanted (100), (110) and (111) silicon crystals studied with Rutherford backscattering and perturbed angular correlation techniques
|
Alves, E.
|
|
1989
|
232-235 |
1-4 |
p. 189-195
7 p.
|
artikel
|
| 130 |
Role of point defects in the transient diffusion and clustering of implanted boron in silicon
|
Cowern, N.E.B.
|
|
1989
|
232-235 |
1-4 |
p. 101-105
5 p.
|
artikel
|
| 131 |
RTA-induced defects: a comparison between lamp and electron beam techniques
|
Susi, E.
|
|
1989
|
232-235 |
1-4 |
p. 231-235
5 p.
|
artikel
|
| 132 |
Scanning tunnelling microscopy studies of diamond-like films prepared by laser ablation
|
Vazquez, L.
|
|
1992
|
232-235 |
1-4 |
p. 363-367
5 p.
|
artikel
|
| 133 |
Seeding recrystallization for producing thick silicon-on-insulator films on non-planar substrates
|
Tillack, B.
|
|
1989
|
232-235 |
1-4 |
p. 237-241
5 p.
|
artikel
|
| 134 |
Short-range order in hydrogenated amorphous SiC alloys studied by extended X-ray absorption fine structure
|
Pascarelli, S.
|
|
1992
|
232-235 |
1-4 |
p. 51-54
4 p.
|
artikel
|
| 135 |
SiC and TaC as optical materials
|
Harris, G.L.
|
|
1992
|
232-235 |
1-4 |
p. 89-91
3 p.
|
artikel
|
| 136 |
SiC bipolar devices
|
Chelnokov, V.E.
|
|
1992
|
232-235 |
1-4 |
p. 103-111
9 p.
|
artikel
|
| 137 |
α-SiC buried-gate junction field effect transistors
|
Kelner, G.
|
|
1992
|
232-235 |
1-4 |
p. 121-124
4 p.
|
artikel
|
| 138 |
Simulation of oxygen precipitation in Czochralski grown silicon
|
Schrems, M.
|
|
1989
|
232-235 |
1-4 |
p. 393-399
7 p.
|
artikel
|
| 139 |
Sponsors
|
|
|
1992
|
232-235 |
1-4 |
p. vii-
1 p.
|
artikel
|
| 140 |
Status and future of silicon crystal growth
|
Zulehner, Werner
|
|
1989
|
232-235 |
1-4 |
p. 1-10
10 p.
|
artikel
|
| 141 |
Strain compensation effects on the annealing of Ge+-B+-implanted silicon
|
Ferreiro, A.
|
|
1989
|
232-235 |
1-4 |
p. 217-222
6 p.
|
artikel
|
| 142 |
Stress modification and characterization of thin SiC films grown by plasma-enhanced chemical vapour deposition
|
Schliwinski, H.-J.
|
|
1992
|
232-235 |
1-4 |
p. 73-77
5 p.
|
artikel
|
| 143 |
Study of the growth mechanisms of amorphous carbon films by isotopic tracing methods
|
Perrière, J.
|
|
1992
|
232-235 |
1-4 |
p. 347-351
5 p.
|
artikel
|
| 144 |
Subject index
|
|
|
1989
|
232-235 |
1-4 |
p. 499-505
7 p.
|
artikel
|
| 145 |
Subject index of volume 11
|
|
|
1992
|
232-235 |
1-4 |
p. 375-379
5 p.
|
artikel
|
| 146 |
Substrate-damage-free laser recrystallization of polycrystalline silicon
|
Buchner, R.
|
|
1989
|
232-235 |
1-4 |
p. 197-200
4 p.
|
artikel
|
| 147 |
Surface characterization of high-dose Sb+ implanted rapid thermal annealed monocrystalline silicon
|
Kumar, S.N
|
|
1989
|
232-235 |
1-4 |
p. 179-184
6 p.
|
artikel
|
| 148 |
Temperature dependence of the electric field gradient parameters at 19F lattice sites in semiconducting and insulating diamonds
|
Sideras-Haddad, E.
|
|
1992
|
232-235 |
1-4 |
p. 307-312
6 p.
|
artikel
|
| 149 |
The effect of phosphorus background concentration on the diffusion of tin, arsenic and antimony in silicon
|
Nylandsted Larsen, A.
|
|
1989
|
232-235 |
1-4 |
p. 107-112
6 p.
|
artikel
|
| 150 |
The effect of silicides on the induction and removal of defects in silicon
|
Maex, K.
|
|
1989
|
232-235 |
1-4 |
p. 321-329
9 p.
|
artikel
|
| 151 |
The 2.526 eV luminescence band in diamond
|
Nazaré, M.H.
|
|
1992
|
232-235 |
1-4 |
p. 341-345
5 p.
|
artikel
|
| 152 |
The fate of implanted 19F ions in diamond and their theoretical modelling
|
Sellschop, J.P.F.
|
|
1992
|
232-235 |
1-4 |
p. 227-234
8 p.
|
artikel
|
| 153 |
The formation of dislocations and their in-situ detection during silicon vapour phase epitaxy at reduced temperature
|
Pidduck, A.J.
|
|
1989
|
232-235 |
1-4 |
p. 417-422
6 p.
|
artikel
|
| 154 |
Theoretical status of diamond and its defects, excited states and atomic motion
|
Stoneham, A.M.
|
|
1992
|
232-235 |
1-4 |
p. 211-218
8 p.
|
artikel
|
| 155 |
Theory of native defects, doping and diffusion in diamond and silicon carbide
|
Bernholc, J.
|
|
1992
|
232-235 |
1-4 |
p. 265-272
8 p.
|
artikel
|
| 156 |
Thermal annealing of excimer-laser-induced defects in virgin silicon
|
Hartiti, B.
|
|
1989
|
232-235 |
1-4 |
p. 257-260
4 p.
|
artikel
|
| 157 |
Thermal conductivity measurements of synthetic diamond films using the photothermal beam deflection technique
|
Petrovsky, A.N.
|
|
1992
|
232-235 |
1-4 |
p. 353-354
2 p.
|
artikel
|
| 158 |
Thermal donors and oxygen-related complexes in silicon
|
Gregorkiewicz, T.
|
|
1989
|
232-235 |
1-4 |
p. 291-297
7 p.
|
artikel
|
| 159 |
The role of atmospheric oxygen and water in the generation of water marks on the silicon surface in cleaning processes
|
Watanabe, M.
|
|
1989
|
232-235 |
1-4 |
p. 401-405
5 p.
|
artikel
|
| 160 |
Transition metals in silicon and their gettering behaviour
|
Graff, K.
|
|
1989
|
232-235 |
1-4 |
p. 63-69
7 p.
|
artikel
|
| 161 |
Transmission electron microscopy studies of dislocation mechanisms in as-sintered α-SiC and after creep experiments at high temperature
|
Lee, S.J.
|
|
1992
|
232-235 |
1-4 |
p. 325-330
6 p.
|
artikel
|
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