nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Analytical expressions for sputter and diffusion-modified ion implantation profiles
|
Martan, J. |
|
1994 |
22 |
2-3 |
p. L1-L4 nvt p. |
artikel |
2 |
Author index of volume 22
|
|
|
1994 |
22 |
2-3 |
p. 321-322 2 p. |
artikel |
3 |
Complex admittance study of potassium yttrium fluoride
|
Shareefuddin, Md. |
|
1994 |
22 |
2-3 |
p. 159-164 6 p. |
artikel |
4 |
Conductivity and phase structure of blend based proton polymeric electrolytes I: Complexes with phosphoric acid
|
Da̧browska, A. |
|
1994 |
22 |
2-3 |
p. 107-116 10 p. |
artikel |
5 |
Conductivity and phase structure of blend based proton polymeric electrolytes II: Ammonium salts complexes
|
Da̧browska, A. |
|
1994 |
22 |
2-3 |
p. 117-127 11 p. |
artikel |
6 |
Core-level photoemission study on a Bi-2212 single crystal
|
Srivastava, P. |
|
1994 |
22 |
2-3 |
p. 217-221 5 p. |
artikel |
7 |
Correlations between the thermoelectric power and Hall effect of Sn or Ge doped In2O3 semiconductors
|
Campet, G. |
|
1994 |
22 |
2-3 |
p. 274-278 5 p. |
artikel |
8 |
Dielectric relaxations in ceramics with compositions (1−x)Pb(Mg 1 3 Nb 2 3 )O 3−xPbTiO 3 (x=0,0.05, 0.10 and 0.25)
|
Elissalde, C. |
|
1994 |
22 |
2-3 |
p. 303-309 7 p. |
artikel |
9 |
Differential scanning calorimetry study of structural relaxation of Ge-doped Se85Te15 glasses
|
Illeková, E. |
|
1994 |
22 |
2-3 |
p. 181-190 10 p. |
artikel |
10 |
Dopant redistribution during the formation of tungsten disilicide by rapid thermal processing
|
Dupuy, J.C. |
|
1994 |
22 |
2-3 |
p. 168-171 4 p. |
artikel |
11 |
Electronic structure of non-stoichiometric Ga-As compounds
|
Lewis, Steven P. |
|
1994 |
22 |
2-3 |
p. 290-296 7 p. |
artikel |
12 |
Epitaxial ferroelectric thin films for memory applications
|
Ramesh, R. |
|
1994 |
22 |
2-3 |
p. 283-289 7 p. |
artikel |
13 |
Far-infrared spectra of lithium-titanium mixed ferrites
|
Bhagavantha Reddy, M. |
|
1994 |
22 |
2-3 |
p. 201-205 5 p. |
artikel |
14 |
Gamma-ray diffraction in the study of silicon
|
Kurbakov, A.I. |
|
1994 |
22 |
2-3 |
p. 149-158 10 p. |
artikel |
15 |
Identification of CuO as a minority phase in YBCO: X-ray diffraction vs. EMF and coulometric titration measurements
|
Porat, O. |
|
1994 |
22 |
2-3 |
p. 310-312 3 p. |
artikel |
16 |
Impact of thermal treatments on deep level behaviour in semi-insulating GaAs
|
Kalboussi, A. |
|
1994 |
22 |
2-3 |
p. 241-246 6 p. |
artikel |
17 |
Ineffective grain boundaries and breakdown threshold of zinc oxide varistors
|
Cao, Ze-Chun |
|
1994 |
22 |
2-3 |
p. 261-266 6 p. |
artikel |
18 |
Influence of carbon on the phase transformation kinetics and magnetic properties of MnAl alloys
|
Huang, J.H. |
|
1994 |
22 |
2-3 |
p. 256-260 5 p. |
artikel |
19 |
In situ growth of YBaCuO films by ion beam sputtering
|
Hao, Jianhua |
|
1994 |
22 |
2-3 |
p. 165-167 3 p. |
artikel |
20 |
Measurements of interdiffusion in compositionally modulated amorphous Ni/Si multilayers by in situ X-ray diffraction
|
Wang, W.H. |
|
1994 |
22 |
2-3 |
p. 211-216 6 p. |
artikel |
21 |
Molten salt synthesis and dielectric properties of Pb(Fe 1 2 Nb 1 2 )O 3−Pb(Fe 1 2 Ta 1 2 )O 3 (PFN-PFT) solid solutions
|
Chiu, Chien C |
|
1994 |
22 |
2-3 |
p. 133-140 8 p. |
artikel |
22 |
Numerical simulation studies of concentration profile and growth rate of InP LPE
|
Santhana Raghavan, P. |
|
1994 |
22 |
2-3 |
p. 227-232 6 p. |
artikel |
23 |
Optical effects of buried conductive layers formed by MeV ion implantation
|
Yu, Yuehui |
|
1994 |
22 |
2-3 |
p. 297-302 6 p. |
artikel |
24 |
Oxygen ion conductivity in Ba 3 In 3−x Zr x O 7.5+ x 2 (x=0.7−1.3)
|
Kontoulis, I. |
|
1994 |
22 |
2-3 |
p. 313-316 4 p. |
artikel |
25 |
Phase equilibria and thermodynamics of solid state contact reactions in the ternary TaGaAs system
|
Han, Q. |
|
1994 |
22 |
2-3 |
p. 141-148 8 p. |
artikel |
26 |
Phase equilibria in the InPtAs system at 600 °C
|
Swenson, D. |
|
1994 |
22 |
2-3 |
p. 267-273 7 p. |
artikel |
27 |
Raman and infrared spectroscopic studies of GeGaAg sulphide glasses
|
Julien, C. |
|
1994 |
22 |
2-3 |
p. 191-200 10 p. |
artikel |
28 |
Recrystallization of boron-doped and undoped preamorphized silicon layers by rapid and conventional thermal annealing
|
Fauré, J. |
|
1994 |
22 |
2-3 |
p. 128-132 5 p. |
artikel |
29 |
Silicon on thin insulator: prediction of the oxygen fluence required for the formation of a continuous buried oxide
|
Cerofolini, G.F. |
|
1994 |
22 |
2-3 |
p. 172-180 9 p. |
artikel |
30 |
Simulation of MOCVD-process for YBaCuO film production in stagnation zone reactor
|
Khoruzhnikov, S.E. |
|
1994 |
22 |
2-3 |
p. 317-320 4 p. |
artikel |
31 |
Spray pyrolysis deposition for indium oxide doped with different impurities
|
Lee, C.H. |
|
1994 |
22 |
2-3 |
p. 233-240 8 p. |
artikel |
32 |
Stability of cubic ZrO2 (10 mol.% Y2O3) when alloyed with NiO, Al2O3 or TiO2: implications to solid electrolytes and cermets
|
Chen, Shueiyuan |
|
1994 |
22 |
2-3 |
p. 247-255 9 p. |
artikel |
33 |
Strain relaxation studied by photoluminescence and by double crystal X-ray diffraction measurements in strained InGaAs
|
Tabata, A. |
|
1994 |
22 |
2-3 |
p. 222-226 5 p. |
artikel |
34 |
Subject index of volume 22
|
|
|
1994 |
22 |
2-3 |
p. 323-328 6 p. |
artikel |
35 |
Synthesis and transport properties of mixed MEEP-PEO-NaSCN polymer electrolytes
|
Subramony, J.A. |
|
1994 |
22 |
2-3 |
p. 206-210 5 p. |
artikel |
36 |
The properties of heavily compensated high resistivity GaSb crystals
|
Milvidskaya, A.G. |
|
1994 |
22 |
2-3 |
p. 279-282 4 p. |
artikel |