| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study of SiO2 deposited by PECVD and thermal method as passivation for multicrystalline silicon solar cells
|
Panek, P.
|
|
2009
|
165 |
1-2 |
p. 64-66
3 p.
|
artikel
|
| 2 |
Al/Au ohmic contact to n-ZnO by dc sputtering
|
Kim, J.H.
|
|
2009
|
165 |
1-2 |
p. 77-79
3 p.
|
artikel
|
| 3 |
A study on mobility degradation in nMOSFETs with HfO2 based gate oxide
|
Hyvert, G.
|
|
2009
|
165 |
1-2 |
p. 129-131
3 p.
|
artikel
|
| 4 |
Carrier transport in SiC crystals and radiation detectors as affected by defect traps and inhomogeneities
|
Kažukauskas, V.
|
|
2009
|
165 |
1-2 |
p. 34-37
4 p.
|
artikel
|
| 5 |
Comparison of different electrochemical deposits for contact metallization of silicon solar cells
|
Boulord, C.
|
|
2009
|
165 |
1-2 |
p. 53-56
4 p.
|
artikel
|
| 6 |
Comprehensive study of InAs/GaAs quantum dots by means of complementary methods
|
Kaczmarczyk, M.
|
|
2009
|
165 |
1-2 |
p. 98-102
5 p.
|
artikel
|
| 7 |
Controlling the size of InAs quantum dots on Si1−x Ge x /Si(001) by metalorganic vapor-phase epitaxy
|
Kawaguchi, Kenichi
|
|
2009
|
165 |
1-2 |
p. 103-106
4 p.
|
artikel
|
| 8 |
Correlation between thickness and optical properties of thin diamond-like carbon films deposited with RF PACVD method
|
Smietana, M.
|
|
2009
|
165 |
1-2 |
p. 132-134
3 p.
|
artikel
|
| 9 |
Dynamical behavior of methylchloride on GaAs(001)
|
Ozeki, M.
|
|
2009
|
165 |
1-2 |
p. 107-110
4 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
2009
|
165 |
1-2 |
p. CO2-
1 p.
|
artikel
|
| 11 |
Elaboration and optical properties of type-II ZnTe on ZnSe heterostructures
|
Najjar, Rita
|
|
2009
|
165 |
1-2 |
p. 85-87
3 p.
|
artikel
|
| 12 |
Elaboration of (111) oriented 3C–SiC/Si layers for template application in nitride epitaxy
|
Zielinski, M.
|
|
2009
|
165 |
1-2 |
p. 9-14
6 p.
|
artikel
|
| 13 |
Electrical and structural characterization of InAs/InGaAs quantum dot structures on GaAs
|
Rimada, J.C.
|
|
2009
|
165 |
1-2 |
p. 111-114
4 p.
|
artikel
|
| 14 |
Electrical characterisation of thin silicon layers by light beam induced current and internal quantum efficiency measurements
|
Sayad, Y.
|
|
2009
|
165 |
1-2 |
p. 67-70
4 p.
|
artikel
|
| 15 |
Electrical characterization of 6H-SiC grown by physical vapor transport method
|
Zaremba, G.
|
|
2009
|
165 |
1-2 |
p. 23-27
5 p.
|
artikel
|
| 16 |
Highly sensitive determination of N+ doping level in 3C–SiC and GaN epilayers by Fourier transform infrared spectroscopy
|
Portail, M.
|
|
2009
|
165 |
1-2 |
p. 42-46
5 p.
|
artikel
|
| 17 |
High temperature behaviour of AlGaN/AlN/GaN Hall-FET sensors
|
Bouguen, L.
|
|
2009
|
165 |
1-2 |
p. 1-4
4 p.
|
artikel
|
| 18 |
InAs/GaAs quantum dots morphology: Nanometric scale HAADF simulations
|
Araújo, D.
|
|
2009
|
165 |
1-2 |
p. 88-93
6 p.
|
artikel
|
| 19 |
Influence of Mg composition on the characteristics of MgZnO/ZnO heterostructures grown by co-sputtering
|
Kim, Young Yi
|
|
2009
|
165 |
1-2 |
p. 80-84
5 p.
|
artikel
|
| 20 |
Lead iodide crystals prepared under stoichiometric and nonstoichiometric conditions
|
Matuchova, M.
|
|
2009
|
165 |
1-2 |
p. 60-63
4 p.
|
artikel
|
| 21 |
LPE growth of InP layers from rare-earth treated melts for radiation detector structures
|
Grym, J.
|
|
2009
|
165 |
1-2 |
p. 94-97
4 p.
|
artikel
|
| 22 |
MIS field effect transistor with barium titanate thin film as a gate insulator
|
Firek, P.
|
|
2009
|
165 |
1-2 |
p. 126-128
3 p.
|
artikel
|
| 23 |
Monte Carlo simulation of bulk semiconductors for accurate calculation of drift velocity as a parameter for drift-diffusion, hydrodynamic models
|
Donnarumma, Gesualdo
|
|
2009
|
165 |
1-2 |
p. 47-49
3 p.
|
artikel
|
| 24 |
Multiexcited state study in InAs DWELL structures
|
Casas-Espinola, J.L.
|
|
2009
|
165 |
1-2 |
p. 115-117
3 p.
|
artikel
|
| 25 |
Novel construction of CdTe solar cell based on polyketanil structure
|
Sibiński, Maciej
|
|
2009
|
165 |
1-2 |
p. 71-73
3 p.
|
artikel
|
| 26 |
Optical investigation of stacking faults in 4H–SiC epitaxial layers: Comparison of 3C and 8H polytypes
|
Juillaguet, S.
|
|
2009
|
165 |
1-2 |
p. 5-8
4 p.
|
artikel
|
| 27 |
Optimization of Si interface control layer thickness for high-k GaAs metal–insulator–semiconductor structures
|
Akazawa, Masamichi
|
|
2009
|
165 |
1-2 |
p. 122-125
4 p.
|
artikel
|
| 28 |
Polarity determination and control of SiC grown on Si
|
Pezoldt, Jörg
|
|
2009
|
165 |
1-2 |
p. 28-33
6 p.
|
artikel
|
| 29 |
Polymer temperature sensor for textronic applications
|
Bielska, Sylwia
|
|
2009
|
165 |
1-2 |
p. 50-52
3 p.
|
artikel
|
| 30 |
Power devices in Polish National Silicon Carbide Program
|
Kubiak, A.
|
|
2009
|
165 |
1-2 |
p. 18-22
5 p.
|
artikel
|
| 31 |
Recent progress in 3.3kV SiC diodes
|
Brosselard, P.
|
|
2009
|
165 |
1-2 |
p. 15-17
3 p.
|
artikel
|
| 32 |
Schottky diode parameters extraction using Lambert W function
|
Jung, W.
|
|
2009
|
165 |
1-2 |
p. 57-59
3 p.
|
artikel
|
| 33 |
Structural analysis of CdS thin films obtained by multiple dips of oscillating chemical bath
|
Gutiérrez Lazos, C.D.
|
|
2009
|
165 |
1-2 |
p. 74-76
3 p.
|
artikel
|
| 34 |
The RHEED tracking of the droplet epitaxial grown quantum dot and ring structures
|
Nemcsics, Á.
|
|
2009
|
165 |
1-2 |
p. 118-121
4 p.
|
artikel
|
| 35 |
Thermal degradation of Au/Ni2Si/n-SiC ohmic contacts under different conditions
|
Kuchuk, A.V.
|
|
2009
|
165 |
1-2 |
p. 38-41
4 p.
|
artikel
|
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