nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Author index of volume 16
|
|
|
1993 |
16 |
1-3 |
p. 313-314 2 p. |
artikel |
2 |
Basic problems of vertical Bridgman growth of CdTe
|
Rudolph, Peter |
|
1993 |
16 |
1-3 |
p. 8-16 9 p. |
artikel |
3 |
Bridgman growth and assessment of CdTe and CdZnTe using the accelerated crucible rotation technique
|
Capper, P. |
|
1993 |
16 |
1-3 |
p. 29-39 11 p. |
artikel |
4 |
Carbon and silicon in travelling heater method grown semi-insulating CdTe
|
Chibani, L. |
|
1993 |
16 |
1-3 |
p. 202-206 5 p. |
artikel |
5 |
CdTe rotation growth on silicon substrates by metallo-organic chemical vapour deposition
|
Ebe, H. |
|
1993 |
16 |
1-3 |
p. 57-59 3 p. |
artikel |
6 |
Cd1−y Zn yTe substrates for Hg1−xCdxTe liquid-phase epitaxy
|
Bruder, M. |
|
1993 |
16 |
1-3 |
p. 40-43 4 p. |
artikel |
7 |
Chemical diffusion of Hg in CdTe
|
Hogg, J.H.C. |
|
1993 |
16 |
1-3 |
p. 195-198 4 p. |
artikel |
8 |
Compact visible microgun-pumped Cd Te-Cd1−x Mn xTe laser
|
Cibert, J. |
|
1993 |
16 |
1-3 |
p. 279-282 4 p. |
artikel |
9 |
Comparative reflectivity study of coupled and uncoupled CdTe/CdMnTe asymmetric double quantum wells
|
Lawrence, I. |
|
1993 |
16 |
1-3 |
p. 235-238 4 p. |
artikel |
10 |
Compensation of trapping losses in CdTe detectors
|
Richter, M. |
|
1993 |
16 |
1-3 |
p. 296-301 6 p. |
artikel |
11 |
Complete characterization of epitaxial CdTe on GaAs from the lattice geometrical point of view
|
Möck, P. |
|
1993 |
16 |
1-3 |
p. 165-167 3 p. |
artikel |
12 |
Computer simulation of CdTe crystal growth and application
|
Steer, Ch. |
|
1993 |
16 |
1-3 |
p. 48-50 3 p. |
artikel |
13 |
Deep centres for optical processing in CdTe
|
Rzepka, E. |
|
1993 |
16 |
1-3 |
p. 262-267 6 p. |
artikel |
14 |
Deep levels in semi-insulating CdTe
|
Moravec, P. |
|
1993 |
16 |
1-3 |
p. 223-227 5 p. |
artikel |
15 |
Defects and electrical properties of doped and undoped CdTe single crystals from tellurium-rich solutions
|
Weigel, E. |
|
1993 |
16 |
1-3 |
p. 17-22 6 p. |
artikel |
16 |
Depth non-uniformities in thin CdTe layers grown by MBE on InSb substrates
|
Ashenford, D.E. |
|
1993 |
16 |
1-3 |
p. 191-194 4 p. |
artikel |
17 |
Determination of the iron acceptor level in CdTe
|
Meyer, B.K. |
|
1993 |
16 |
1-3 |
p. 243-245 3 p. |
artikel |
18 |
Diffusion of gallium in cadmium telluride
|
Blackmore, G.W. |
|
1993 |
16 |
1-3 |
p. 186-190 5 p. |
artikel |
19 |
Donor activation efficiency and doping profile quality in In-doped CdTe and CdZnTe quantum structures
|
Bassani, F. |
|
1993 |
16 |
1-3 |
p. 207-210 4 p. |
artikel |
20 |
Editorial Board
|
|
|
1993 |
16 |
1-3 |
p. iii- 1 p. |
artikel |
21 |
Effect of interdiffusion on dislocation generation in epitaxial layers on CdTe, (Cd,Zn)Te and Cd(Te,Se) substrates
|
Utke, I. |
|
1993 |
16 |
1-3 |
p. 199-201 3 p. |
artikel |
22 |
Effect of large-scale potential relief on the electronic transport in doped and compensated CdTe: the role of impurity correlations
|
Agrinskaya, N.V. |
|
1993 |
16 |
1-3 |
p. 172-177 6 p. |
artikel |
23 |
Effect of the {h11} orientations and polarities of GaAs substrates CdTe buffer layer structural properties
|
Tromson-Carli, A. |
|
1993 |
16 |
1-3 |
p. 145-150 6 p. |
artikel |
24 |
Effect of thermal annealing on the microstructure of CdTe and Cd1−xZnxTe crystals
|
Shen, J. |
|
1993 |
16 |
1-3 |
p. 182-185 4 p. |
artikel |
25 |
Efficient n-type doping of CdTe epitaxial layers grown by photo-assisted molecular beam epitaxy with the use of chlorine
|
Hommel, D. |
|
1993 |
16 |
1-3 |
p. 178-181 4 p. |
artikel |
26 |
Floating-zone melting of CdTe
|
Chang, Wen-Ming |
|
1993 |
16 |
1-3 |
p. 23-28 6 p. |
artikel |
27 |
Foreword
|
Triboulet, R. |
|
1993 |
16 |
1-3 |
p. ix-x nvt p. |
artikel |
28 |
Fourier transform IR spectroscopy of CdTe:Fe
|
Carmo, M.C. |
|
1993 |
16 |
1-3 |
p. 246-249 4 p. |
artikel |
29 |
Gamma- and X-ray detectors manufactured from Cd 1−x Zn x Te grown by a high pressure bridgman method
|
Butler, Jack F. |
|
1993 |
16 |
1-3 |
p. 291-295 5 p. |
artikel |
30 |
Growth and structure of CdTe/Cd1−x Mn xTe multiple quantum wells showing excitonic 2S states
|
Hogg, J.H.C. |
|
1993 |
16 |
1-3 |
p. 60-63 4 p. |
artikel |
31 |
Growth of CdTe single crystals by vapour condensation on the surface of polycrystalline source material
|
Szczerbakow, Andrzej |
|
1993 |
16 |
1-3 |
p. 68-70 3 p. |
artikel |
32 |
Heteroepitaxy of CdTe on GaAs and silicon substrates
|
Faurie, J.P. |
|
1993 |
16 |
1-3 |
p. 51-56 6 p. |
artikel |
33 |
High quality CdTe and its application to radiation detectors
|
Ohmori, M. |
|
1993 |
16 |
1-3 |
p. 283-290 8 p. |
artikel |
34 |
Horizontal Bridgman growth of large high quality Cd1−y Zn yTe crystals
|
Brunet, P. |
|
1993 |
16 |
1-3 |
p. 44-47 4 p. |
artikel |
35 |
Implantation-enhanced interdiffusion in CdTe/ZnTe quantum wells
|
Hamoudi, A. |
|
1993 |
16 |
1-3 |
p. 211-214 4 p. |
artikel |
36 |
In situ reflectance anisotropy studies of the growth of CdTe and other compounds by MOCVD
|
Sallet, V. |
|
1993 |
16 |
1-3 |
p. 118-122 5 p. |
artikel |
37 |
Ion channelling Rutherford backscattering spectrometry structural characterization of CdS/CdTe heterostructures
|
Guerrieri, A. |
|
1993 |
16 |
1-3 |
p. 160-164 5 p. |
artikel |
38 |
Laser growth of CdTe epitaxial film on CdTe substrate
|
Coutal, C. |
|
1993 |
16 |
1-3 |
p. 64-67 4 p. |
artikel |
39 |
Mechanical properties of CdTe
|
Balasubramanian, R. |
|
1993 |
16 |
1-3 |
p. 1-7 7 p. |
artikel |
40 |
Native defect equilibrium in semi-insulating CdTe(Cl)
|
Höschl, P. |
|
1993 |
16 |
1-3 |
p. 215-218 4 p. |
artikel |
41 |
Native point defects in CdTe and its stability region
|
Wienecke, M. |
|
1993 |
16 |
1-3 |
p. 219-222 4 p. |
artikel |
42 |
New method for the determination of VCd concentrations in p-CdTe
|
Zimmermann, H. |
|
1993 |
16 |
1-3 |
p. 139-144 6 p. |
artikel |
43 |
Optical, photoelectrical, deep level and photorefractive characterization of CdTe:V
|
Zielinger, J.P. |
|
1993 |
16 |
1-3 |
p. 273-278 6 p. |
artikel |
44 |
Organizers and sponsors
|
|
|
1993 |
16 |
1-3 |
p. xi- 1 p. |
artikel |
45 |
Overview of CdTe-based semimagnetic semiconductors
|
Lascaray, J.P. |
|
1993 |
16 |
1-3 |
p. 228-234 7 p. |
artikel |
46 |
Picosecond diffraction kinetics of transient gratings in CdTe and CdZnTe
|
Gouaichault-Brugel, N. |
|
1993 |
16 |
1-3 |
p. 309-312 4 p. |
artikel |
47 |
Piezomodulated reflectivity on CdMnTe/CdTe quantum well structures as a new standard characterization method
|
Kurtz, E. |
|
1993 |
16 |
1-3 |
p. 92-95 4 p. |
artikel |
48 |
Piezoreflectivity investigation of CdTe/(Cd,Zn)Te heterostructures
|
Calatayud, J. |
|
1993 |
16 |
1-3 |
p. 87-91 5 p. |
artikel |
49 |
Positron trapping at native vacancies in CdTe crystals: In doping effect
|
Corbel, C. |
|
1993 |
16 |
1-3 |
p. 134-138 5 p. |
artikel |
50 |
Potentiality of photorefractive CdTe
|
Moisan, J.Y. |
|
1993 |
16 |
1-3 |
p. 257-261 5 p. |
artikel |
51 |
Power switching with CdTe:Cl
|
Lajzerowicz, J. |
|
1993 |
16 |
1-3 |
p. 304-308 5 p. |
artikel |
52 |
Properties of dry-etched CdTe-epitaxial layer surfaces and microstructures
|
Neswal, M. |
|
1993 |
16 |
1-3 |
p. 108-112 5 p. |
artikel |
53 |
Qualification of a new defect revealing etch for CdTe using cathodoluminescence microscopy
|
Watson, C.C.R. |
|
1993 |
16 |
1-3 |
p. 113-117 5 p. |
artikel |
54 |
Relation between dislocation density, bulk electrical properties and ohmic contacts of CdTe
|
Hähnert, I. |
|
1993 |
16 |
1-3 |
p. 168-171 4 p. |
artikel |
55 |
RHEED studies of MBE growth mechanisms of CdTe and CdMnTe
|
Waag, A. |
|
1993 |
16 |
1-3 |
p. 103-107 5 p. |
artikel |
56 |
Scanning tunneling microscope investigation of the effects of CdTe substrate preparation on molecular beam epitaxially grown n-CdTe layers
|
Ehinger, M. |
|
1993 |
16 |
1-3 |
p. 151-154 4 p. |
artikel |
57 |
Short period CdTe-ZnTe and CdTe-MnTe superlattices
|
Faschinger, W. |
|
1993 |
16 |
1-3 |
p. 79-82 4 p. |
artikel |
58 |
Specific behaviour of CdTe ion implantation damage
|
Leo, G. |
|
1993 |
16 |
1-3 |
p. 123-127 5 p. |
artikel |
59 |
Spectroscopy of donors and donor-bound excitons in CdTe/Cd1−x Zn xTe multiple quantum wells
|
Cox, R.T. |
|
1993 |
16 |
1-3 |
p. 83-86 4 p. |
artikel |
60 |
Structural and electronic properties of CdTe-based heterostructures
|
Magnea, N. |
|
1993 |
16 |
1-3 |
p. 71-78 8 p. |
artikel |
61 |
Structural defects in bulk and epitaxial CdTe
|
Durose, K. |
|
1993 |
16 |
1-3 |
p. 96-102 7 p. |
artikel |
62 |
Structural properties of defects in Cd1−x Zn xTe
|
Hofmann, D.M. |
|
1993 |
16 |
1-3 |
p. 128-133 6 p. |
artikel |
63 |
Subject index of volume 16
|
|
|
1993 |
16 |
1-3 |
p. 315-320 6 p. |
artikel |
64 |
The electronic bistability in doped semiconductors with polar optical scattering: the reversible switching effect in CdTe:Cl at room temperature
|
Agrinskaya, N.V. |
|
1993 |
16 |
1-3 |
p. 302-303 2 p. |
artikel |
65 |
Thin films of CdTe produced using stacked elemental layer processing for use in CdTe/CdS solar cells
|
Miles, R.W. |
|
1993 |
16 |
1-3 |
p. 250-256 7 p. |
artikel |
66 |
Time-resolved build-up and decay of photorefractive and free-carrier gratings in CdTe:V
|
Jarasiunas, Kestutis |
|
1993 |
16 |
1-3 |
p. 268-272 5 p. |
artikel |
67 |
Time-resolved light-induced faraday rotation in Zn 1−x Mn x Te and Cd 1−x Mn x Te
|
Hugonnard-Bruyere, S. |
|
1993 |
16 |
1-3 |
p. 239-242 4 p. |
artikel |
68 |
X-ray photoelectron diffraction from the CdTe(111)A polar surface
|
Granozzi, G. |
|
1993 |
16 |
1-3 |
p. 155-159 5 p. |
artikel |