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                             61 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comparative structural investigation of GaN implanted with rare earth ions at room temperature and 500°C Gloux, F.
2008
146 1-3 p. 204-207
4 p.
artikel
2 Author Index 2008
146 1-3 p. 269-270
2 p.
artikel
3 A visible transparent electroluminescent europium doped gallium oxide device Wellenius, P.
2008
146 1-3 p. 252-255
4 p.
artikel
4 Blue emission properties of Eu-doped CaAl2O4 phosphors synthesized by a flux method Park, Yun Jin
2008
146 1-3 p. 84-88
5 p.
artikel
5 Ce3+-doped lutetium yttrium orthosilicate crystals: Structural characterization Ricci, Pier Carlo
2008
146 1-3 p. 2-6
5 p.
artikel
6 Characterization of YVO4:Eu3+, Sm3+ red phosphor quick synthesized by microwave rapid heating method Park, W.J.
2008
146 1-3 p. 95-98
4 p.
artikel
7 Editorial Board 2008
146 1-3 p. iii-
1 p.
artikel
8 Electron paramagnetic resonance study of centres involved in storage processes in K2YF5: RE thermoluminescent phosphors Vrielinck, H.
2008
146 1-3 p. 16-21
6 p.
artikel
9 Energy level diagram for lanthanide-doped lanthanum orthovanadate Krumpel, Andreas H.
2008
146 1-3 p. 114-120
7 p.
artikel
10 Energy transfer from Gd to Er atoms in SiO2(GdEr)-MOSLEDs produced by ion implantation Prucnal, S.
2008
146 1-3 p. 241-244
4 p.
artikel
11 Energy transfer in Ce and Eu co-doped barium thiogallate: A photoluminescence characterization Marceddu, M.
2008
146 1-3 p. 216-219
4 p.
artikel
12 Energy transfer processes in doubly doped Yb, Pr:KPb2Cl5 for mid-infrared laser applications Bluiett, A.G.
2008
146 1-3 p. 110-113
4 p.
artikel
13 Enhanced photoluminescence of nanostructured Er3+-doped a-Si/a-Al2O3 thin films prepared by PLD Toudert, J.
2008
146 1-3 p. 141-145
5 p.
artikel
14 Erbium doped stain etched porous silicon González-Díaz, B.
2008
146 1-3 p. 171-174
4 p.
artikel
15 Er-doped Al2O3 thin films deposited by high-vacuum chemical vapor deposition (HV-CVD) Multone, X.
2008
146 1-3 p. 35-40
6 p.
artikel
16 Fabrication and optical properties of Eu3+-doped ZnO nanospheres and nanorods Ishizumi, A.
2008
146 1-3 p. 212-215
4 p.
artikel
17 Field-assisted ion diffusion in dielectric matrices: Er3+ in silicate glass Cattaruzza, E.
2008
146 1-3 p. 163-166
4 p.
artikel
18 Fluorescence dynamics and energy migration in Er3+-doped SRSO structure Al Choueiry, Antoine
2008
146 1-3 p. 157-159
3 p.
artikel
19 Growth, structural and spectroscopic properties of Yb3+-doped Li0.75Gd0.75Ba0.5(MoO4)2 crystals García-Cortés, A.
2008
146 1-3 p. 89-94
6 p.
artikel
20 Infrared spectroscopic and laser characterization of Tm in disordered double tungstates Cano-Torres, J.M.
2008
146 1-3 p. 22-28
7 p.
artikel
21 Ln3+:KLu(WO4)2/KLu(WO4)2 epitaxial layers: Crystal growth and physical characterisation Silvestre, O.
2008
146 1-3 p. 59-65
7 p.
artikel
22 Luminescence and energy transfer properties of Gd3+ and Tb3+ in LaAlGe2O7 Li, Yu-Chun
2008
146 1-3 p. 225-230
6 p.
artikel
23 Luminescence of TiO2:Pr nanoparticles incorporated in silica aerogel Amlouk, A.
2008
146 1-3 p. 74-79
6 p.
artikel
24 Luminescence properties of Ca- and Yb-codoped SiAlON phosphors Dierre, B.
2008
146 1-3 p. 80-83
4 p.
artikel
25 Manufacturing of Er:ZBLAN ridge waveguides by pulsed laser deposition and ultrafast laser micromachining for green integrated lasers Gottmann, Jens
2008
146 1-3 p. 245-251
7 p.
artikel
26 Mid-infrared emission in Yb3+–Er3+–Tm3+ co-doped oxyfluoride glass-ceramics Tikhomirov, V.K.
2008
146 1-3 p. 66-68
3 p.
artikel
27 Mid-infrared emission properties of Nd-doped lead halides for photonic applications Brown, E.
2008
146 1-3 p. 103-106
4 p.
artikel
28 Mid-infrared spectroscopy of the Er-related donor state in Si/Si:Er3+ nanolayers Izeddin, I.
2008
146 1-3 p. 131-134
4 p.
artikel
29 1.54μm luminescence of Er-doped SiO x and GeO x thin films: A comparative study Rinnert, H.
2008
146 1-3 p. 146-150
5 p.
artikel
30 Near and mid-infrared luminescence of new chalcohalide glasses doped with Pr3+ ions Oswald, J.
2008
146 1-3 p. 107-109
3 p.
artikel
31 Observation of photo- and electro-luminescence at 1.54μm of Er in strained Si and SiGe Kamiura, Y.
2008
146 1-3 p. 135-140
6 p.
artikel
32 Optical gain at 1.53μm in Er3+–Yb3+ co-doped porous silicon waveguides Najar, A.
2008
146 1-3 p. 260-263
4 p.
artikel
33 Photoluminescence of Tb3+-doped SiN x films with different Si concentrations Yuan, Zhizhong
2008
146 1-3 p. 126-130
5 p.
artikel
34 Photoluminescent properties of Sr2SiO4:Eu2+ phosphors prepared by solid-state reaction method Lee, Jee Hee
2008
146 1-3 p. 99-102
4 p.
artikel
35 Preparation and optical characterization of transparent, microporous TiO2 xerogel monoliths El Mir, L.
2008
146 1-3 p. 69-73
5 p.
artikel
36 Pump-probe investigations of THz transitions in Si/Si:Er3+ nanolayers Minissale, S.
2008
146 1-3 p. 160-162
3 p.
artikel
37 Quantitative description of the microstructure of polyurethane nanocomposites with YAG including Tb3+ Ryszkowska, Joanna
2008
146 1-3 p. 54-58
5 p.
artikel
38 Quantum chemical prediction of antennae structures in lanthanide complexes Ottonelli, M.
2008
146 1-3 p. 50-53
4 p.
artikel
39 Rare-earth doped boron nitride nanotubes Chen, Hua
2008
146 1-3 p. 189-192
4 p.
artikel
40 Rare earth doping of photonic materials: Mechanisms and devices Evans-Freeman, J.
2008
146 1-3 p. 1-
1 p.
artikel
41 Role of CaO addition in the local order around Erbium in SiO2–GeO2–P2O5 fiber preforms d’Acapito, F.
2008
146 1-3 p. 167-170
4 p.
artikel
42 Sentitized near-infrared emission in novel neodymium complexes bearing oligothiophene derivatives as antennae Rizzo, F.
2008
146 1-3 p. 45-49
5 p.
artikel
43 Silicon nanoclusters containing nitrogen and sensitization of erbium luminescence in SiO x :Er Wojdak, M.
2008
146 1-3 p. 175-178
4 p.
artikel
44 Site-dependent Eu3+ luminescence in GaN:Eu3+ epitaxial films studied by microscopic photoluminescence spectroscopy Ishizumi, A.
2008
146 1-3 p. 186-188
3 p.
artikel
45 Site-selective luminescence studies of the 4I11/2 excited states of Er centers in 6H SiC Glukhanyuk, V.
2008
146 1-3 p. 208-211
4 p.
artikel
46 Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er Makarova, K.
2008
146 1-3 p. 193-195
3 p.
artikel
47 Spectroscopic studies of Nd3+-doped silicon-rich silicon oxide films Bréard, D.
2008
146 1-3 p. 179-182
4 p.
artikel
48 Structural and photoluminescence properties of Cr2+:ZnSe films deposited by radiofrequency magnetron co-sputtering for mid-infrared microlaser applications Vivet, N.
2008
146 1-3 p. 236-240
5 p.
artikel
49 Structural, chemical and optical characterizations of nanocrystallized AlN:Er thin films prepared by r.f. magnetron sputtering Brien, V.
2008
146 1-3 p. 200-203
4 p.
artikel
50 Subject Index 2008
146 1-3 p. 271-276
6 p.
artikel
51 Synthesis and characterization of nanocrystalline Yb:Lu2O3 by modified Pechini method Galceran, M.
2008
146 1-3 p. 7-15
9 p.
artikel
52 Synthesis and luminescence properties of erbium silicate thin films Miritello, Maria
2008
146 1-3 p. 29-34
6 p.
artikel
53 Temperature-induced increase in erbium electroluminescence of epitaxially grown Si:Er diodes Shmagin, V.B.
2008
146 1-3 p. 256-259
4 p.
artikel
54 The appearance of clear ferromagnetism for p-type InMnP:Zn implanted with Mn of 1at.% Shon, Yoon
2008
146 1-3 p. 220-224
5 p.
artikel
55 The dependence of the dopant distribution on the pulling rate and on the capillary channel radius in the case of a Nd:YVO4 cylindrical bar grown from the melt by EFG method Braescu, L.
2008
146 1-3 p. 41-44
4 p.
artikel
56 The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells Vernon-Parry, K.D.
2008
146 1-3 p. 231-235
5 p.
artikel
57 Theoretical investigations of EPR parameters and local structure of single erbium center in hexagonal GaN layers Maâlej, R.
2008
146 1-3 p. 183-185
3 p.
artikel
58 Theory of energy transfer between Er3+ ions and carriers confined in Si nanocrystals in SiO2 matrix Prokofiev, A.A.
2008
146 1-3 p. 121-125
5 p.
artikel
59 The study of structural, optical, and magnetic properties of undoped and p-type GaN implanted with Mn+ (10at.%) Shon, Yoon
2008
146 1-3 p. 196-199
4 p.
artikel
60 Ultraviolet luminescence of Gd-doped a-Si X C Y O Z :H films fabricated by plasma chemical vapor deposition Tyczkowski, J.
2008
146 1-3 p. 151-156
6 p.
artikel
61 Using rare earth doped thiosilicate phosphors in white light emitting LEDs: Towards low colour temperature and high colour rendering Smet, P.F.
2008
146 1-3 p. 264-268
5 p.
artikel
                             61 gevonden resultaten
 
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