| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs
|
Pham, A.T.
|
|
2006
|
135 |
3 |
p. 224-227
4 p.
|
artikel
|
| 2 |
Author index of volume 135
|
|
|
2006
|
135 |
3 |
p. 297-298
2 p.
|
artikel
|
| 3 |
Band offsets of high K gate oxides on high mobility semiconductors
|
Robertson, J.
|
|
2006
|
135 |
3 |
p. 267-271
5 p.
|
artikel
|
| 4 |
Carrier mobility and strain effect in heavily doped p-type Si
|
Romano, Lucia
|
|
2006
|
135 |
3 |
p. 220-223
4 p.
|
artikel
|
| 5 |
Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement
|
Bethoux, J.-M.
|
|
2006
|
135 |
3 |
p. 294-296
3 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
2006
|
135 |
3 |
p. CO2-
1 p.
|
artikel
|
| 7 |
E-MRS IUMRS ICEM 2006 Symposium B: From strained silicon to nanotubes—Novel channels for field effect devices
|
Frank, Martin M.
|
|
2006
|
135 |
3 |
p. 177-178
2 p.
|
artikel
|
| 8 |
Fabrication of silicon on lattice-engineered substrate (SOLES) as a platform for monolithic integration of CMOS and optoelectronic devices
|
Dohrman, Carl L.
|
|
2006
|
135 |
3 |
p. 235-237
3 p.
|
artikel
|
| 9 |
Gallium oxide (Ga2 O3) on gallium arsenide—A low defect, high-K system for future devices
|
Paterson, G.W.
|
|
2006
|
135 |
3 |
p. 277-281
5 p.
|
artikel
|
| 10 |
GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric
|
Wu, Y.Q.
|
|
2006
|
135 |
3 |
p. 282-284
3 p.
|
artikel
|
| 11 |
HfO2 as gate dielectric on Ge: Interfaces and deposition techniques
|
Caymax, M.
|
|
2006
|
135 |
3 |
p. 256-260
5 p.
|
artikel
|
| 12 |
High-k gate stack on GaAs and InGaAs using in situ passivation with amorphous silicon
|
Oktyabrsky, S.
|
|
2006
|
135 |
3 |
p. 272-276
5 p.
|
artikel
|
| 13 |
High performance germanium MOSFETs
|
Saraswat, Krishna
|
|
2006
|
135 |
3 |
p. 242-249
8 p.
|
artikel
|
| 14 |
High-resolution electron holography for the study of composition and strain in thin film semiconductors
|
Houdellier, F.
|
|
2006
|
135 |
3 |
p. 188-191
4 p.
|
artikel
|
| 15 |
Hole mobility enhancement of p-MOSFETs using global and local Ge-channel technologies
|
Takagi, Shinichi
|
|
2006
|
135 |
3 |
p. 250-255
6 p.
|
artikel
|
| 16 |
Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices
|
Uppal, Suresh
|
|
2006
|
135 |
3 |
p. 207-209
3 p.
|
artikel
|
| 17 |
Inherent point defects in thermal biaxially tensile strained-(100)Si/SiO2 probed by electron spin resonance
|
Stesmans, A.
|
|
2006
|
135 |
3 |
p. 195-198
4 p.
|
artikel
|
| 18 |
Mechanisms of stress generation within a polysilicon gate for nMOSFET performance enhancement
|
Morin, Pierre
|
|
2006
|
135 |
3 |
p. 215-219
5 p.
|
artikel
|
| 19 |
Monte Carlo simulations of δ -doping placement in sub-100 nm implant free InGaAs MOSFETs
|
Kalna, K.
|
|
2006
|
135 |
3 |
p. 285-288
4 p.
|
artikel
|
| 20 |
Oxidation of very low energy nitrogen-implanted strained-silicon
|
Kelaidis, N.
|
|
2006
|
135 |
3 |
p. 199-202
4 p.
|
artikel
|
| 21 |
Physics of process induced uniaxially strained Si
|
Sun, Y.
|
|
2006
|
135 |
3 |
p. 179-183
5 p.
|
artikel
|
| 22 |
Properties of silicon nanolayers on insulator
|
Naumova, O.V.
|
|
2006
|
135 |
3 |
p. 238-241
4 p.
|
artikel
|
| 23 |
Relaxation of strain in patterned strained silicon investigated by UV Raman spectroscopy
|
Himcinschi, C.
|
|
2006
|
135 |
3 |
p. 184-187
4 p.
|
artikel
|
| 24 |
Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures
|
Varzgar, John B.
|
|
2006
|
135 |
3 |
p. 203-206
4 p.
|
artikel
|
| 25 |
sSOI fabrication by wafer bonding and layer splitting of thin SiGe virtual substrates
|
Radu, I.
|
|
2006
|
135 |
3 |
p. 231-234
4 p.
|
artikel
|
| 26 |
Stress determination in strained-Si grown on ultra-thin SiGe virtual substrates
|
Perova, T.S.
|
|
2006
|
135 |
3 |
p. 192-194
3 p.
|
artikel
|
| 27 |
Subject index of volume 135
|
|
|
2006
|
135 |
3 |
p. 299-304
6 p.
|
artikel
|
| 28 |
Supercritical strained silicon on insulator
|
Lochtefeld, Anthony
|
|
2006
|
135 |
3 |
p. 228-230
3 p.
|
artikel
|
| 29 |
Ta–Si contacts to n-SiC for high temperatures devices
|
Guziewicz, M.
|
|
2006
|
135 |
3 |
p. 289-293
5 p.
|
artikel
|
| 30 |
Technology CAD for germanium CMOS circuit
|
Saha, A.R.
|
|
2006
|
135 |
3 |
p. 261-266
6 p.
|
artikel
|
| 31 |
Thermal oxidation kinetics of an Si1−x C x alloy layer (x ≃0.1) on Si(001) surfaces monitored in real time by RHEED combined with AES
|
Ogawa, Shuichi
|
|
2006
|
135 |
3 |
p. 210-214
5 p.
|
artikel
|
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