| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Annealing effect on the formation of nanocrystals in thermally evaporated tungsten oxide thin films
|
Jayatissa, Ahalapitiya H
|
|
2004
|
109 |
1-3 |
p. 269-275
|
artikel
|
| 2 |
a-Si:H TFT enhancement by plasma processing of the insulating/semiconductor interface
|
Lavareda, G
|
|
2004
|
109 |
1-3 |
p. 264-268
|
artikel
|
| 3 |
Atmospheric pressure chemical vapor deposition of titanium dioxide films from TiCl4
|
Arvan, B.
|
|
2004
|
109 |
1-3 |
p. 17-23
|
artikel
|
| 4 |
Author index
|
|
|
2004
|
109 |
1-3 |
p. 276-277
|
artikel
|
| 5 |
BNT ceramics synthesis and characterization
|
Ioachim, A.
|
|
2004
|
109 |
1-3 |
p. 183-187
|
artikel
|
| 6 |
Dielectric properties and electronic transitions of porous and nanostructured cerium oxide films
|
Logothetidis, S
|
|
2004
|
109 |
1-3 |
p. 69-73
|
artikel
|
| 7 |
EELS study of oxygen superstructure in epitaxial Y2O3 layers
|
Travlos, A
|
|
2004
|
109 |
1-3 |
p. 52-55
|
artikel
|
| 8 |
Effect of the substrate temperature on the properties of ZnO films grown by RF magnetron sputtering
|
Chaabouni, F
|
|
2004
|
109 |
1-3 |
p. 236-240
|
artikel
|
| 9 |
Effect of the tunnelling oxide growth by H2O2 oxidation on the performance of a-Si:H MIS photodiodes
|
Águas, H
|
|
2004
|
109 |
1-3 |
p. 256-259
|
artikel
|
| 10 |
Electrical and optical properties of zinc oxide thin films grown by reactive magnetron sputtering method
|
Abdullin, Kh.A.
|
|
2004
|
109 |
1-3 |
p. 241-244
|
artikel
|
| 11 |
Electrical properties of metal–oxide–silicon structures with LaAlO3 as gate oxide
|
Mereu, B
|
|
2004
|
109 |
1-3 |
p. 94-98
|
artikel
|
| 12 |
Electrical properties of thin rf sputtered aluminum oxide films
|
Voigt, M
|
|
2004
|
109 |
1-3 |
p. 99-103
|
artikel
|
| 13 |
E-MRS 2003 Symposium I: Functional Metal Oxides—Semiconductor Structures
|
Dimoulas, Athanasios
|
|
2004
|
109 |
1-3 |
p. 1
|
artikel
|
| 14 |
Enhancement of the ferroelectric properties of Pb(Zr0.53Ti0.47)O3 thin films fabricated by laser ablation
|
Jeon, Chang Hoon
|
|
2004
|
109 |
1-3 |
p. 141-145
|
artikel
|
| 15 |
Ferromagnetic Co-doped ZnO thin films grown using pulsed laser deposition from Zn and Co metallic targets
|
Prellier, W.
|
|
2004
|
109 |
1-3 |
p. 192-195
|
artikel
|
| 16 |
Field-effect transistor based on nanometric thin CdS films
|
Mereu, B.
|
|
2004
|
109 |
1-3 |
p. 260-263
|
artikel
|
| 17 |
Growth and magnetic properties of CoCr2O4 epitaxial films
|
Lüders, U
|
|
2004
|
109 |
1-3 |
p. 200-202
|
artikel
|
| 18 |
Growth and relaxation of (Zr,Y)O2 epitaxial layers analyzed by XRD reciprocal space mapping
|
Guinebretière, R
|
|
2004
|
109 |
1-3 |
p. 42-46
|
artikel
|
| 19 |
Hafnium oxide gate dielectrics grown from an alkoxide precursor: structure and defects
|
Frank, Martin M
|
|
2004
|
109 |
1-3 |
p. 6-10
|
artikel
|
| 20 |
Hafnium silicon oxide films prepared by atomic layer deposition
|
Kukli, Kaupo
|
|
2004
|
109 |
1-3 |
p. 2-5
|
artikel
|
| 21 |
Hall effect study of magnetoresistive perovskite LaNi0.5Co0.5O3 thin films
|
Androulakis, J
|
|
2004
|
109 |
1-3 |
p. 217-220
|
artikel
|
| 22 |
Hydrogen post-annealing effect of the ferroelectric properties of (Pb0.72La0.28)Ti0.93O3 films fabricated by pulsed laser deposition
|
Han, Kyoung Bo
|
|
2004
|
109 |
1-3 |
p. 170-173
|
artikel
|
| 23 |
IFC
|
|
|
2004
|
109 |
1-3 |
p. IFC
|
artikel
|
| 24 |
Injection induced charging of HfO2 insulators on Si
|
Afanas’ev, V.V
|
|
2004
|
109 |
1-3 |
p. 74-77
|
artikel
|
| 25 |
Intrinsic conductive oxide–p-InSe solar cells
|
Kovalyuk, Z.D
|
|
2004
|
109 |
1-3 |
p. 252-255
|
artikel
|
| 26 |
ITO films deposited by rf-PERTE on unheated polymer substrates—properties dependence on In–Sn alloy composition
|
Nunes de Carvalho, C
|
|
2004
|
109 |
1-3 |
p. 245-248
|
artikel
|
| 27 |
Lead titanate thin film synthesis by solid-state reactions
|
Stankus, V.
|
|
2004
|
109 |
1-3 |
p. 178-182
|
artikel
|
| 28 |
Low fatigue lead zirconate titanate-based capacitors modified by manganese for nonvolatile memories
|
Zhang, Q.
|
|
2004
|
109 |
1-3 |
p. 136-140
|
artikel
|
| 29 |
Low temperature growth of epitaxial complex oxide films by an excimer laser MOD process
|
Tsuchiya, T
|
|
2004
|
109 |
1-3 |
p. 131-135
|
artikel
|
| 30 |
Magnetic properties of Co/Al2O3/Co junctions deposited by ultra high vacuum ion beam sputtering
|
Maunoury, C
|
|
2004
|
109 |
1-3 |
p. 213-216
|
artikel
|
| 31 |
MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
|
Vellianitis, G
|
|
2004
|
109 |
1-3 |
p. 85-88
|
artikel
|
| 32 |
Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers
|
Hållstedt, J
|
|
2004
|
109 |
1-3 |
p. 122-126
|
artikel
|
| 33 |
Negative-bias-temperature-instability in metal–insulator–semiconductor structures
|
Volkos, S.N.
|
|
2004
|
109 |
1-3 |
p. 127-130
|
artikel
|
| 34 |
Non-crystalline pyroelectric BaTiO3 thin films
|
Lyahovitskaya, V
|
|
2004
|
109 |
1-3 |
p. 167-169
|
artikel
|
| 35 |
Oxidation effects in epitaxial Fe3O4 layers on MgO and MgAl2O4 substrates studied by X-ray absorption, fluorescence and photoemission
|
Krasnikov, S.A
|
|
2004
|
109 |
1-3 |
p. 207-212
|
artikel
|
| 36 |
Oxides ferroelectric (Ba, Sr)TiO3 for microwave devices
|
Alexandru, H.V
|
|
2004
|
109 |
1-3 |
p. 152-159
|
artikel
|
| 37 |
Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application
|
Pereira, L
|
|
2004
|
109 |
1-3 |
p. 89-93
|
artikel
|
| 38 |
Physical characterization of mixed HfAlO x layers by complementary analysis techniques
|
Bender, H
|
|
2004
|
109 |
1-3 |
p. 60-63
|
artikel
|
| 39 |
Properties of BaTiO3 thin films deposited by radiofrequency beam discharge assisted pulsed laser deposition
|
Canulescu, S
|
|
2004
|
109 |
1-3 |
p. 160-166
|
artikel
|
| 40 |
Pr2O3/Si(001) interface reactions and stability
|
Schmeißer, Dieter
|
|
2004
|
109 |
1-3 |
p. 30-33
|
artikel
|
| 41 |
Pulsed laser deposition of thin Pr x O y films on Si(100)
|
Wolfframm, D
|
|
2004
|
109 |
1-3 |
p. 24-29
|
artikel
|
| 42 |
Relevance of the 3D to 2D growth mode transition for the transport properties of nanometric SrRuO3 films
|
Herranz, G
|
|
2004
|
109 |
1-3 |
p. 221-225
|
artikel
|
| 43 |
Ru and RuO2 gate electrodes for advanced CMOS technology
|
Fröhlich, K.
|
|
2004
|
109 |
1-3 |
p. 117-121
|
artikel
|
| 44 |
Si overgrowth on Y2O3 (1 1 0)/Si (0 0 1) by molecular beam epitaxy
|
Mavrou, G.
|
|
2004
|
109 |
1-3 |
p. 39-41
|
artikel
|
| 45 |
Sputter deposited Pt–Ir oxides thin films and their characterization
|
Kuribayashi, Kiyosi
|
|
2004
|
109 |
1-3 |
p. 188-191
|
artikel
|
| 46 |
Structural and electrical properties of sol–gel deposited Pb(Zr0.92Ti0.08)O3 thin films doped with Nb
|
Pintilie, L.
|
|
2004
|
109 |
1-3 |
p. 174-177
|
artikel
|
| 47 |
Structural characterization of epitaxial Y2O3 on Si (0 0 1) and of the Y2O3/Si interface
|
Spiga, S
|
|
2004
|
109 |
1-3 |
p. 47-51
|
artikel
|
| 48 |
Studies on the crystal growth aspects of efficient optical data storage material: Mn doped near-stoichiometric lithium niobate (Mn:SLN)
|
Ravi, G
|
|
2004
|
109 |
1-3 |
p. 232-235
|
artikel
|
| 49 |
Subject index
|
|
|
2004
|
109 |
1-3 |
p. 278-283
|
artikel
|
| 50 |
Synthesis and characterisation of La1−x Na x MnO3+δ thin films manganites
|
Alessandri, I
|
|
2004
|
109 |
1-3 |
p. 203-206
|
artikel
|
| 51 |
Synthesis of iron oxide nanocomposites using layered double hydroxides
|
Nikiforov, M.P
|
|
2004
|
109 |
1-3 |
p. 226-231
|
artikel
|
| 52 |
The band structure of ALCVD AlZr- and AlHf-oxides as measured by XPS
|
Pétry, J
|
|
2004
|
109 |
1-3 |
p. 56-59
|
artikel
|
| 53 |
The effect of cerium doping in barium zirconate titanate thin films deposited by rf magnetron sputtering system
|
Choi, Won Seok
|
|
2004
|
109 |
1-3 |
p. 146-151
|
artikel
|
| 54 |
Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices
|
Olsen, S.H
|
|
2004
|
109 |
1-3 |
p. 78-84
|
artikel
|
| 55 |
Thermal stability of SrRuO3 epitaxial layers under forming-gas anneal
|
Halley, D
|
|
2004
|
109 |
1-3 |
p. 113-116
|
artikel
|
| 56 |
Trends of structural and electrical properties in atomic layer deposited HfO2 films
|
Scarel, G
|
|
2004
|
109 |
1-3 |
p. 11-16
|
artikel
|
| 57 |
VUV spectroscopic ellipsometry applied to the characterization of high-k dielectrics
|
Boher, P
|
|
2004
|
109 |
1-3 |
p. 64-68
|
artikel
|
| 58 |
X-ray, optical and electrical characterization of doped nanocrystalline titanium oxide thin films
|
Domaradzki, J
|
|
2004
|
109 |
1-3 |
p. 249-251
|
artikel
|
| 59 |
Y2O3 thin films: internal stress and microstructure
|
Gaboriaud, R.J
|
|
2004
|
109 |
1-3 |
p. 34-38
|
artikel
|
| 60 |
ZnO-based semimagnetic semiconductors: growth and magnetism aspects
|
Savchuk, A.I
|
|
2004
|
109 |
1-3 |
p. 196-199
|
artikel
|
| 61 |
ZT thin films produced by metal organic-chemical vapour deposition to be used as high-k dielectrics
|
Padeletti, G
|
|
2004
|
109 |
1-3 |
p. 104-112
|
artikel
|
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