nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A simple approach for upconversion determination using low excitation power: the photoluminescence analysis of an Er-doped aluminosilicate glass
|
Enrichi, F |
|
2003 |
105 |
1-3 |
p. 20-24 5 p. |
artikel |
2 |
A study on stimulated emission from erbium in silicon
|
Huda, M.Q |
|
2003 |
105 |
1-3 |
p. 146-149 4 p. |
artikel |
3 |
author index
|
|
|
2003 |
105 |
1-3 |
p. 236-237 2 p. |
artikel |
4 |
Characterization of crystalline europium doped α-Y2O3 PLD-films grown on α-Al2O3
|
Burmester, P.B.W |
|
2003 |
105 |
1-3 |
p. 25-29 5 p. |
artikel |
5 |
Charge transport, trapping and electroluminescence in erbium doped a-Si:H/n-Si light-emitting heterodiodes
|
Nazarov, A.N |
|
2003 |
105 |
1-3 |
p. 61-64 4 p. |
artikel |
6 |
Comparative study of Er-implanted Si, ZnAs2 and CuInSe2
|
Yakushev, M.V |
|
2003 |
105 |
1-3 |
p. 175-178 4 p. |
artikel |
7 |
Effect of optical properties of Er2O3 doped stoichiometric LiNbO3 single crystals and co-doped with MgO
|
Lee, S.M |
|
2003 |
105 |
1-3 |
p. 34-36 3 p. |
artikel |
8 |
Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique
|
Shmagin, V.B |
|
2003 |
105 |
1-3 |
p. 70-73 4 p. |
artikel |
9 |
Elaboration, structural and spectroscopic properties of rare earth-doped yttrium–hafnium sol–gel oxide powders for scintillation applications
|
Villanueva-Ibañez, M |
|
2003 |
105 |
1-3 |
p. 12-15 4 p. |
artikel |
10 |
Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation
|
Mamor, M |
|
2003 |
105 |
1-3 |
p. 179-183 5 p. |
artikel |
11 |
Emission channeling experiments from the decay of 149 Gd to 149 Eu in GaN
|
De Vries, B |
|
2003 |
105 |
1-3 |
p. 106-110 5 p. |
artikel |
12 |
Emission of Er- and Si-doped silicate glass films obtained by magnetron co-sputtering
|
Gourbilleau, F. |
|
2003 |
105 |
1-3 |
p. 44-47 4 p. |
artikel |
13 |
Enhanced photoluminescence of Tb3+ and Eu3+ induced by energy transfer from SnO2 and Si nanocrystallites
|
Elhouichet, H |
|
2003 |
105 |
1-3 |
p. 8-11 4 p. |
artikel |
14 |
Enhancement of erbium luminescence in c-Si by terahertz radiation
|
Moskalenko, A.S |
|
2003 |
105 |
1-3 |
p. 184-187 4 p. |
artikel |
15 |
Er-defect complexes and isolated Er center spectroscopy in Er-implanted GaN
|
Braud, A |
|
2003 |
105 |
1-3 |
p. 101-105 5 p. |
artikel |
16 |
Er doped Si nanostructures
|
Pacifici, D |
|
2003 |
105 |
1-3 |
p. 197-204 8 p. |
artikel |
17 |
Er3+-doped tellurite waveguides deposited by excimer laser ablation
|
Caricato, A.P |
|
2003 |
105 |
1-3 |
p. 65-69 5 p. |
artikel |
18 |
Europium-doped sesquioxide thin films grown on sapphire by PLD
|
Bär, S |
|
2003 |
105 |
1-3 |
p. 30-33 4 p. |
artikel |
19 |
Evidence for energy transfer between Eu3+ and Tb3+ in porous silicon matrix
|
Moadhen, A |
|
2003 |
105 |
1-3 |
p. 157-160 4 p. |
artikel |
20 |
Excitation mechanism of erbium photoluminescence in bulk silicon and silicon nanostructures
|
Yassievich, I.N. |
|
2003 |
105 |
1-3 |
p. 192-196 5 p. |
artikel |
21 |
Excitation paths in RE-doped III–V semiconductors
|
Klik, M.A.J |
|
2003 |
105 |
1-3 |
p. 141-145 5 p. |
artikel |
22 |
Fabrication and photoluminescence properties of erbium doped size-controlled silicon nanocrystals
|
Heitmann, J |
|
2003 |
105 |
1-3 |
p. 214-220 7 p. |
artikel |
23 |
4f energies in an organic-rare earth guest-host system: the rare earth tris-8-hydroxyquinolines
|
Thompson, J |
|
2003 |
105 |
1-3 |
p. 41-43 3 p. |
artikel |
24 |
Fluoride glass planar waveguides for active applications
|
Lousteau, J |
|
2003 |
105 |
1-3 |
p. 74-78 5 p. |
artikel |
25 |
FTIR and XPS investigation of Er-doped SiO2–TiO2 films
|
Fang, Q. |
|
2003 |
105 |
1-3 |
p. 209-213 5 p. |
artikel |
26 |
Growth and characteristics of (TbBi)3(FeAlGa)5O12 and (EuBi)3(FeAlGa)5O12 garnet single crystal thick films
|
Yoon, S.G |
|
2003 |
105 |
1-3 |
p. 48-52 5 p. |
artikel |
27 |
High efficiency light emitting devices in silicon
|
Castagna, Maria Eloisa |
|
2003 |
105 |
1-3 |
p. 83-90 8 p. |
artikel |
28 |
High-resolution spectroscopy of Er3+ ions in 6H SiC
|
Kozanecki, A. |
|
2003 |
105 |
1-3 |
p. 169-174 6 p. |
artikel |
29 |
Implantation and annealing studies of Tm-implanted GaN
|
Lorenz, K |
|
2003 |
105 |
1-3 |
p. 97-100 4 p. |
artikel |
30 |
Implantation angle dependence of ion irradiation damage in GaN
|
Nord, J |
|
2003 |
105 |
1-3 |
p. 111-113 3 p. |
artikel |
31 |
Influence of porous anodic alumina matrix upon europium luminescence from sol–gel-derived films
|
Molchan, I.S |
|
2003 |
105 |
1-3 |
p. 37-40 4 p. |
artikel |
32 |
Inside front cover
|
|
|
2003 |
105 |
1-3 |
p. IFC- 1 p. |
artikel |
33 |
In situ control of SiO x composition by spectroscopic ellipsometry
|
Gallas, B |
|
2003 |
105 |
1-3 |
p. 205-208 4 p. |
artikel |
34 |
Lattice location and optical activation of rare earth implanted GaN
|
Wahl, U |
|
2003 |
105 |
1-3 |
p. 132-140 9 p. |
artikel |
35 |
Light-induced effects in a-Si:H(Er)
|
Birukov, A.V. |
|
2003 |
105 |
1-3 |
p. 153-156 4 p. |
artikel |
36 |
Loss measurements of ER-doped silicon-on-insulator waveguides
|
Gad, M.A |
|
2003 |
105 |
1-3 |
p. 79-82 4 p. |
artikel |
37 |
Microstructural and electrical characterization of Er and Eu implanted gallium nitride
|
Wojtowicz, T. |
|
2003 |
105 |
1-3 |
p. 122-125 4 p. |
artikel |
38 |
Microstructure and emission properties of Si nanograins and Er-doped silica films obtained by reactive magnetron co-sputtering
|
Singh, P. |
|
2003 |
105 |
1-3 |
p. 221-225 5 p. |
artikel |
39 |
Near infra-red photoluminescence of Nd3+ in hydrogenated amorphous silicon sub-nitrides a-SiN x :H〈Nd〉
|
Biggemann, Daniel |
|
2003 |
105 |
1-3 |
p. 188-191 4 p. |
artikel |
40 |
New spectroscopic data of erbium ions in GaN thin films
|
Pellé, F. |
|
2003 |
105 |
1-3 |
p. 126-131 6 p. |
artikel |
41 |
Optical and magnetooptical study of CdTe crystals doped with rare earth ions
|
Savchuk, A.I |
|
2003 |
105 |
1-3 |
p. 161-164 4 p. |
artikel |
42 |
Photoluminescence investigation of europium-doped alumina, titania and indium sol–gel-derived films in porous anodic alumina
|
Kudrawiec, R |
|
2003 |
105 |
1-3 |
p. 53-56 4 p. |
artikel |
43 |
Photoluminescence properties of Nd: LiNbO3 co-doped with ZnO fiber single crystals grown by micro-pulling-down method
|
Shur, J.W |
|
2003 |
105 |
1-3 |
p. 16-19 4 p. |
artikel |
44 |
Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN
|
Hömmerich, U |
|
2003 |
105 |
1-3 |
p. 91-96 6 p. |
artikel |
45 |
Photoluminescence study of erbium doped SiO2 thin films containing Si nanocrystals
|
Kao, C.-C |
|
2003 |
105 |
1-3 |
p. 226-229 4 p. |
artikel |
46 |
Rare earth-doped materials for photonics
|
Moncorgé, R |
|
2003 |
105 |
1-3 |
p. 1- 1 p. |
artikel |
47 |
Rare-earth doped phosphors: oldies or goldies?
|
Moine, B |
|
2003 |
105 |
1-3 |
p. 2-7 6 p. |
artikel |
48 |
Room temperature 1.5μm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy
|
Fujiwara, Y |
|
2003 |
105 |
1-3 |
p. 57-60 4 p. |
artikel |
49 |
Spectroscopic characterization of Er-1 center in selectively doped silicon
|
Vinh, N.Q. |
|
2003 |
105 |
1-3 |
p. 150-152 3 p. |
artikel |
50 |
subject index
|
|
|
2003 |
105 |
1-3 |
p. 238-242 5 p. |
artikel |
51 |
Synthesis and optical characterization of erbium-doped III-N double heterostructures
|
Zavada, J.M. |
|
2003 |
105 |
1-3 |
p. 118-121 4 p. |
artikel |
52 |
Temperature independent Er3+ photoluminescence lifetime in a-Si:H<Er> and a-SiO x :H<Er>
|
Tessler, Leandro R |
|
2003 |
105 |
1-3 |
p. 165-168 4 p. |
artikel |
53 |
The infra-red photoresponse of erbium-doped silicon nanocrystals
|
Kenyon, A.J |
|
2003 |
105 |
1-3 |
p. 230-235 6 p. |
artikel |
54 |
The microstructure of Er MBE doped GaN
|
Wojtowicz, T |
|
2003 |
105 |
1-3 |
p. 114-117 4 p. |
artikel |