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                             54 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A simple approach for upconversion determination using low excitation power: the photoluminescence analysis of an Er-doped aluminosilicate glass Enrichi, F
2003
105 1-3 p. 20-24
5 p.
artikel
2 A study on stimulated emission from erbium in silicon Huda, M.Q
2003
105 1-3 p. 146-149
4 p.
artikel
3 author index 2003
105 1-3 p. 236-237
2 p.
artikel
4 Characterization of crystalline europium doped α-Y2O3 PLD-films grown on α-Al2O3 Burmester, P.B.W
2003
105 1-3 p. 25-29
5 p.
artikel
5 Charge transport, trapping and electroluminescence in erbium doped a-Si:H/n-Si light-emitting heterodiodes Nazarov, A.N
2003
105 1-3 p. 61-64
4 p.
artikel
6 Comparative study of Er-implanted Si, ZnAs2 and CuInSe2 Yakushev, M.V
2003
105 1-3 p. 175-178
4 p.
artikel
7 Effect of optical properties of Er2O3 doped stoichiometric LiNbO3 single crystals and co-doped with MgO Lee, S.M
2003
105 1-3 p. 34-36
3 p.
artikel
8 Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique Shmagin, V.B
2003
105 1-3 p. 70-73
4 p.
artikel
9 Elaboration, structural and spectroscopic properties of rare earth-doped yttrium–hafnium sol–gel oxide powders for scintillation applications Villanueva-Ibañez, M
2003
105 1-3 p. 12-15
4 p.
artikel
10 Electrical and structural characterization of defects introduced in p-SiGe during low energy erbium implantation Mamor, M
2003
105 1-3 p. 179-183
5 p.
artikel
11 Emission channeling experiments from the decay of 149 Gd to 149 Eu in GaN De Vries, B
2003
105 1-3 p. 106-110
5 p.
artikel
12 Emission of Er- and Si-doped silicate glass films obtained by magnetron co-sputtering Gourbilleau, F.
2003
105 1-3 p. 44-47
4 p.
artikel
13 Enhanced photoluminescence of Tb3+ and Eu3+ induced by energy transfer from SnO2 and Si nanocrystallites Elhouichet, H
2003
105 1-3 p. 8-11
4 p.
artikel
14 Enhancement of erbium luminescence in c-Si by terahertz radiation Moskalenko, A.S
2003
105 1-3 p. 184-187
4 p.
artikel
15 Er-defect complexes and isolated Er center spectroscopy in Er-implanted GaN Braud, A
2003
105 1-3 p. 101-105
5 p.
artikel
16 Er doped Si nanostructures Pacifici, D
2003
105 1-3 p. 197-204
8 p.
artikel
17 Er3+-doped tellurite waveguides deposited by excimer laser ablation Caricato, A.P
2003
105 1-3 p. 65-69
5 p.
artikel
18 Europium-doped sesquioxide thin films grown on sapphire by PLD Bär, S
2003
105 1-3 p. 30-33
4 p.
artikel
19 Evidence for energy transfer between Eu3+ and Tb3+ in porous silicon matrix Moadhen, A
2003
105 1-3 p. 157-160
4 p.
artikel
20 Excitation mechanism of erbium photoluminescence in bulk silicon and silicon nanostructures Yassievich, I.N.
2003
105 1-3 p. 192-196
5 p.
artikel
21 Excitation paths in RE-doped III–V semiconductors Klik, M.A.J
2003
105 1-3 p. 141-145
5 p.
artikel
22 Fabrication and photoluminescence properties of erbium doped size-controlled silicon nanocrystals Heitmann, J
2003
105 1-3 p. 214-220
7 p.
artikel
23 4f energies in an organic-rare earth guest-host system: the rare earth tris-8-hydroxyquinolines Thompson, J
2003
105 1-3 p. 41-43
3 p.
artikel
24 Fluoride glass planar waveguides for active applications Lousteau, J
2003
105 1-3 p. 74-78
5 p.
artikel
25 FTIR and XPS investigation of Er-doped SiO2–TiO2 films Fang, Q.
2003
105 1-3 p. 209-213
5 p.
artikel
26 Growth and characteristics of (TbBi)3(FeAlGa)5O12 and (EuBi)3(FeAlGa)5O12 garnet single crystal thick films Yoon, S.G
2003
105 1-3 p. 48-52
5 p.
artikel
27 High efficiency light emitting devices in silicon Castagna, Maria Eloisa
2003
105 1-3 p. 83-90
8 p.
artikel
28 High-resolution spectroscopy of Er3+ ions in 6H SiC Kozanecki, A.
2003
105 1-3 p. 169-174
6 p.
artikel
29 Implantation and annealing studies of Tm-implanted GaN Lorenz, K
2003
105 1-3 p. 97-100
4 p.
artikel
30 Implantation angle dependence of ion irradiation damage in GaN Nord, J
2003
105 1-3 p. 111-113
3 p.
artikel
31 Influence of porous anodic alumina matrix upon europium luminescence from sol–gel-derived films Molchan, I.S
2003
105 1-3 p. 37-40
4 p.
artikel
32 Inside front cover 2003
105 1-3 p. IFC-
1 p.
artikel
33 In situ control of SiO x composition by spectroscopic ellipsometry Gallas, B
2003
105 1-3 p. 205-208
4 p.
artikel
34 Lattice location and optical activation of rare earth implanted GaN Wahl, U
2003
105 1-3 p. 132-140
9 p.
artikel
35 Light-induced effects in a-Si:H(Er) Birukov, A.V.
2003
105 1-3 p. 153-156
4 p.
artikel
36 Loss measurements of ER-doped silicon-on-insulator waveguides Gad, M.A
2003
105 1-3 p. 79-82
4 p.
artikel
37 Microstructural and electrical characterization of Er and Eu implanted gallium nitride Wojtowicz, T.
2003
105 1-3 p. 122-125
4 p.
artikel
38 Microstructure and emission properties of Si nanograins and Er-doped silica films obtained by reactive magnetron co-sputtering Singh, P.
2003
105 1-3 p. 221-225
5 p.
artikel
39 Near infra-red photoluminescence of Nd3+ in hydrogenated amorphous silicon sub-nitrides a-SiN x :H〈Nd〉 Biggemann, Daniel
2003
105 1-3 p. 188-191
4 p.
artikel
40 New spectroscopic data of erbium ions in GaN thin films Pellé, F.
2003
105 1-3 p. 126-131
6 p.
artikel
41 Optical and magnetooptical study of CdTe crystals doped with rare earth ions Savchuk, A.I
2003
105 1-3 p. 161-164
4 p.
artikel
42 Photoluminescence investigation of europium-doped alumina, titania and indium sol–gel-derived films in porous anodic alumina Kudrawiec, R
2003
105 1-3 p. 53-56
4 p.
artikel
43 Photoluminescence properties of Nd: LiNbO3 co-doped with ZnO fiber single crystals grown by micro-pulling-down method Shur, J.W
2003
105 1-3 p. 16-19
4 p.
artikel
44 Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN Hömmerich, U
2003
105 1-3 p. 91-96
6 p.
artikel
45 Photoluminescence study of erbium doped SiO2 thin films containing Si nanocrystals Kao, C.-C
2003
105 1-3 p. 226-229
4 p.
artikel
46 Rare earth-doped materials for photonics Moncorgé, R
2003
105 1-3 p. 1-
1 p.
artikel
47 Rare-earth doped phosphors: oldies or goldies? Moine, B
2003
105 1-3 p. 2-7
6 p.
artikel
48 Room temperature 1.5μm electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy Fujiwara, Y
2003
105 1-3 p. 57-60
4 p.
artikel
49 Spectroscopic characterization of Er-1 center in selectively doped silicon Vinh, N.Q.
2003
105 1-3 p. 150-152
3 p.
artikel
50 subject index 2003
105 1-3 p. 238-242
5 p.
artikel
51 Synthesis and optical characterization of erbium-doped III-N double heterostructures Zavada, J.M.
2003
105 1-3 p. 118-121
4 p.
artikel
52 Temperature independent Er3+ photoluminescence lifetime in a-Si:H<Er> and a-SiO x :H<Er> Tessler, Leandro R
2003
105 1-3 p. 165-168
4 p.
artikel
53 The infra-red photoresponse of erbium-doped silicon nanocrystals Kenyon, A.J
2003
105 1-3 p. 230-235
6 p.
artikel
54 The microstructure of Er MBE doped GaN Wojtowicz, T
2003
105 1-3 p. 114-117
4 p.
artikel
                             54 gevonden resultaten
 
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