| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Absorption coefficient of oxide precipitates in silicon wafers after different three-step annealing
|
Sassella, A.
|
|
2003
|
102 |
1-3 |
p. 247-250
4 p.
|
artikel
|
| 2 |
Advanced characterization of Si/Si1−y C y heterostructures for nMOS devices
|
Laugier, F.
|
|
2003
|
102 |
1-3 |
p. 119-122
4 p.
|
artikel
|
| 3 |
A global evaluation of stripping efficiency by TD-GCMS
|
Danel, A.
|
|
2003
|
102 |
1-3 |
p. 30-36
7 p.
|
artikel
|
| 4 |
An advanced characterization of defects in thin oxides
|
Caputo, Domenico
|
|
2003
|
102 |
1-3 |
p. 94-98
5 p.
|
artikel
|
| 5 |
An advanced technique for measuring minority-carrier parameters and defect properties of semiconductors
|
Ahrenkiel, R.K.
|
|
2003
|
102 |
1-3 |
p. 161-172
12 p.
|
artikel
|
| 6 |
Analysis of microstructures using the ion acoustic effect
|
Akhmadaliev, Ch.
|
|
2003
|
102 |
1-3 |
p. 8-11
4 p.
|
artikel
|
| 7 |
Analysis of new bridge-type superconducting fault current limiter applying modified magnetic shielding model
|
Lim, S.H.
|
|
2003
|
102 |
1-3 |
p. 348-351
4 p.
|
artikel
|
| 8 |
Analysis of the 1.55 eV PL band of CdTe polycrystalline films
|
Aguilar-Hernández, J.
|
|
2003
|
102 |
1-3 |
p. 203-206
4 p.
|
artikel
|
| 9 |
An electrical technique for the measurement of the interface recombination velocity based on a three-terminal test structure
|
Daliento, S.
|
|
2003
|
102 |
1-3 |
p. 198-202
5 p.
|
artikel
|
| 10 |
Annealing effect on the structural and optical properties of ZnO thin film on InP
|
Shim, Eun Sub
|
|
2003
|
102 |
1-3 |
p. 366-369
4 p.
|
artikel
|
| 11 |
Atomic force microscopic imaging and wet etching of Bi2Ti2O7 thin films
|
Wang, Z.
|
|
2003
|
102 |
1-3 |
p. 335-338
4 p.
|
artikel
|
| 12 |
Author Index
|
|
|
2003
|
102 |
1-3 |
p. 413-414
2 p.
|
artikel
|
| 13 |
Capacitance study of defects induced in heavily damaged region formed in hydrogen implanted Si
|
Kaniewska, M.
|
|
2003
|
102 |
1-3 |
p. 233-237
5 p.
|
artikel
|
| 14 |
Carrier concentration and mobility in B doped Si1−x Ge x
|
Romano, L.
|
|
2003
|
102 |
1-3 |
p. 49-52
4 p.
|
artikel
|
| 15 |
Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon
|
Simoen, E.
|
|
2003
|
102 |
1-3 |
p. 207-212
6 p.
|
artikel
|
| 16 |
Characterization of carrier lifetime and diffusivity in 4H–SiC using time-resolved imaging spectroscopy of electroluminescence
|
Galeckas, A.
|
|
2003
|
102 |
1-3 |
p. 304-307
4 p.
|
artikel
|
| 17 |
Characterization of Si(111) crystals implanted with Sb+ ions and annealed by rapid thermal processing
|
Labbani, R.
|
|
2003
|
102 |
1-3 |
p. 390-397
8 p.
|
artikel
|
| 18 |
Characterization of vertical RESURF diodes using scanning probe microscopy
|
Duhayon, N.
|
|
2003
|
102 |
1-3 |
p. 143-147
5 p.
|
artikel
|
| 19 |
Computational analysis of etched profile evolution for the derivation of 2D dopant density maps in silicon
|
La Magna, A.
|
|
2003
|
102 |
1-3 |
p. 43-48
6 p.
|
artikel
|
| 20 |
Conditions of ICP for a superconducting flux flow transistor and its etching characteristics
|
Kang, Hyeong-Gon
|
|
2003
|
102 |
1-3 |
p. 344-347
4 p.
|
artikel
|
| 21 |
Contribution for the optimization of the vapor phase decomposition technique
|
Danel, A.
|
|
2003
|
102 |
1-3 |
p. 213-217
5 p.
|
artikel
|
| 22 |
Critical dimension improvement of plasma enhanced chemical vapor deposition silicon nitride thin films in GaAs devices
|
Hallakoun, I.
|
|
2003
|
102 |
1-3 |
p. 352-357
6 p.
|
artikel
|
| 23 |
Damage formation and recovery in temperature helium implanted 4H–SiC
|
Oliviero, E.
|
|
2003
|
102 |
1-3 |
p. 289-292
4 p.
|
artikel
|
| 24 |
Degradation study in SCH-SQW GaAs/AlGaAs lasers
|
Kaniewska, M.
|
|
2003
|
102 |
1-3 |
p. 327-330
4 p.
|
artikel
|
| 25 |
Deposition kinetic of airborne organic contamination on wafers measured by TD-GC/MS
|
Veillerot, M
|
|
2003
|
102 |
1-3 |
p. 385-389
5 p.
|
artikel
|
| 26 |
Determination of doping levels and their distribution in SiC by optical techniques
|
Wellmann, P.J.
|
|
2003
|
102 |
1-3 |
p. 262-268
7 p.
|
artikel
|
| 27 |
‘3-Dimensional’ TEM silicon-device analysis by combining plan-view and FIB sample preparation
|
De Veirman, A.E.M.
|
|
2003
|
102 |
1-3 |
p. 63-69
7 p.
|
artikel
|
| 28 |
Editorial
|
Rosenwaks, Y
|
|
2003
|
102 |
1-3 |
p. 1-
1 p.
|
artikel
|
| 29 |
Electron and hole trap levels in semi-insulating GaAs investigated by a temperature variation of piezoelectric photo-thermal spectra
|
Ito, A.
|
|
2003
|
102 |
1-3 |
p. 22-24
3 p.
|
artikel
|
| 30 |
Evaluation of the density of states parameters of a-Si:H by AC photoconductivity measurements and numerical simulation
|
Eray, A.
|
|
2003
|
102 |
1-3 |
p. 398-402
5 p.
|
artikel
|
| 31 |
Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes
|
Poyai, A.
|
|
2003
|
102 |
1-3 |
p. 189-192
4 p.
|
artikel
|
| 32 |
Helium implantation in silicon: the effects of implantation temperature
|
Oliviero, E.
|
|
2003
|
102 |
1-3 |
p. 222-227
6 p.
|
artikel
|
| 33 |
Improved reproducibility in scanning capacitance microscopy for quantitative 2D carrier profiling on silicon
|
Goghero, D.
|
|
2003
|
102 |
1-3 |
p. 152-155
4 p.
|
artikel
|
| 34 |
Influence of doping on thermal stability of Si/Si1−x Ge x /Si heterostructures
|
Suvar, E.
|
|
2003
|
102 |
1-3 |
p. 53-57
5 p.
|
artikel
|
| 35 |
Influence of N2/H2 plasma treatment on chemical vapor deposited TiN multilayer structures for advanced CMOS technologies
|
Melnik, V.
|
|
2003
|
102 |
1-3 |
p. 358-361
4 p.
|
artikel
|
| 36 |
Infrared analysis of thin layers by attenuated total reflection spectroscopy
|
Rochat, N.
|
|
2003
|
102 |
1-3 |
p. 16-21
6 p.
|
artikel
|
| 37 |
Infrared photoreflectance spectroscopy of AlGaAsSb-, InGaSb-based quantum wells
|
Kudrawiec, R.
|
|
2003
|
102 |
1-3 |
p. 331-334
4 p.
|
artikel
|
| 38 |
Infrared studies of oxygen-related defect formation in neutron-irradiated Cz-silicon after annealing at T=450–650°C under hydrostatic pressure
|
Surma, B.
|
|
2003
|
102 |
1-3 |
p. 339-343
5 p.
|
artikel
|
| 39 |
Inside front Cover
|
|
|
2003
|
102 |
1-3 |
p. IFC-
1 p.
|
artikel
|
| 40 |
Interface control by modified sputtering on Pt/HfO2/Si system
|
Nam, Suheun
|
|
2003
|
102 |
1-3 |
p. 123-127
5 p.
|
artikel
|
| 41 |
Investigation of minority carrier diffusion length in shallow junctions by angle-resolved illumination technique
|
Parretta, A.
|
|
2003
|
102 |
1-3 |
p. 179-183
5 p.
|
artikel
|
| 42 |
Kelvin probe force microscopy on III–V semiconductors: the effect of surface defects on the local work function
|
Glatzel, Th.
|
|
2003
|
102 |
1-3 |
p. 138-142
5 p.
|
artikel
|
| 43 |
Lateral scanning of Si based systems by measurements of the microwave photoconductance
|
Kunst, M.
|
|
2003
|
102 |
1-3 |
p. 173-178
6 p.
|
artikel
|
| 44 |
Local composition analysis of SiC microstructures formed by ion projection in silicon using energy filtered TEM in combination with FIB specimen preparation
|
Lindner, J.K.N.
|
|
2003
|
102 |
1-3 |
p. 70-74
5 p.
|
artikel
|
| 45 |
Magnetic susceptibility of P+N junctions in correlation with the nature of silicon substrate: crystalline or pre-amorphised
|
Abdelaoui, M.
|
|
2003
|
102 |
1-3 |
p. 370-375
6 p.
|
artikel
|
| 46 |
Mapping of minority carrier lifetime and mobility in imperfect silicon wafers
|
Palais, O.
|
|
2003
|
102 |
1-3 |
p. 184-188
5 p.
|
artikel
|
| 47 |
Measurement of nitrogen in Czochralski silicon by means of infrared spectroscopy
|
Porrini, M.
|
|
2003
|
102 |
1-3 |
p. 228-232
5 p.
|
artikel
|
| 48 |
Measurement of the microwave Hall effect for the characterization of semiconductors
|
Schrape, M.
|
|
2003
|
102 |
1-3 |
p. 409-412
4 p.
|
artikel
|
| 49 |
Microreflectivity studies of wavelength control in oxidised AlGaAs microcavities
|
Macaluso, R.
|
|
2003
|
102 |
1-3 |
p. 317-322
6 p.
|
artikel
|
| 50 |
Microstructural study of annealed Cr/Si system using cross-sectional TEM combined with nano-analysis
|
Mirouh, K.
|
|
2003
|
102 |
1-3 |
p. 80-83
4 p.
|
artikel
|
| 51 |
Modification and characterization of thin silicon gate oxides using conducting atomic force microscopy
|
Kremmer, S.
|
|
2003
|
102 |
1-3 |
p. 88-93
6 p.
|
artikel
|
| 52 |
Non-invasive electrical characterization of semiconductor interfaces
|
Vanderhaghen, Regis
|
|
2003
|
102 |
1-3 |
p. 156-160
5 p.
|
artikel
|
| 53 |
Optimisation of a combined transient-ion-drift/rapid thermal annealing process for copper detection in silicon
|
Belayachi, A.
|
|
2003
|
102 |
1-3 |
p. 218-221
4 p.
|
artikel
|
| 54 |
Photoelectron spectra of Al dopants in 4H–SiC
|
Schmeißer, D.
|
|
2003
|
102 |
1-3 |
p. 284-288
5 p.
|
artikel
|
| 55 |
Photoluminescence and Raman spectroscopy of Mg-doped GaN; as grown, hydrogen implanted and annealed
|
Kunert, H.W.
|
|
2003
|
102 |
1-3 |
p. 293-297
5 p.
|
artikel
|
| 56 |
Physical and electrical degradation of ZrO2 thin films with aluminum electrodes
|
Nam, Seok-Woo
|
|
2003
|
102 |
1-3 |
p. 108-112
5 p.
|
artikel
|
| 57 |
Polytype determination at the SiC–SiO2 interface by internal electron photoemission scattering spectroscopy
|
Afanas'ev, V.V.
|
|
2003
|
102 |
1-3 |
p. 308-312
5 p.
|
artikel
|
| 58 |
Positron beam analysis of structurally ordered porosity in mesoporous silica thin films
|
van Veen, A.
|
|
2003
|
102 |
1-3 |
p. 2-7
6 p.
|
artikel
|
| 59 |
Progress towards a physical contact model for scanning spreading resistance microscopy
|
Eyben, P
|
|
2003
|
102 |
1-3 |
p. 132-137
6 p.
|
artikel
|
| 60 |
Properties of ITO films on glass fabricated by pulsed laser deposition
|
Choi, Jin Baek
|
|
2003
|
102 |
1-3 |
p. 376-379
4 p.
|
artikel
|
| 61 |
Raman measurement of stress distribution in multicrystalline silicon materials
|
Kouteva-Arguirova, S.
|
|
2003
|
102 |
1-3 |
p. 37-42
6 p.
|
artikel
|
| 62 |
Recent advanced applications of AAS and ICP-MS in the semiconductor industry
|
Shabani, Mohammad B.
|
|
2003
|
102 |
1-3 |
p. 238-246
9 p.
|
artikel
|
| 63 |
Relaxation process of ion irradiation defects in IV-semiconductors
|
Murakami, Y.
|
|
2003
|
102 |
1-3 |
p. 362-365
4 p.
|
artikel
|
| 64 |
Scanning spreading resistance microscopy of aluminum implanted 4H–SiC
|
Osterman, J.
|
|
2003
|
102 |
1-3 |
p. 128-131
4 p.
|
artikel
|
| 65 |
Some physical properties of chalcopyrite and orthorhombic AgInS2 thin films prepared by spray pyrolysis
|
Aguilera, M.L.Albor
|
|
2003
|
102 |
1-3 |
p. 380-384
5 p.
|
artikel
|
| 66 |
Structural and electrical characterization of epitaxial 4H–SiC layers for power electronic device applications
|
Scaltrito, L.
|
|
2003
|
102 |
1-3 |
p. 298-303
6 p.
|
artikel
|
| 67 |
Structural and morphological characterisation of heteroepitaxial CeO2 films grown on YSZ (100) and TiO2 (001) by metal–organic chemical vapour deposition
|
Lo Nigro, R.
|
|
2003
|
102 |
1-3 |
p. 323-326
4 p.
|
artikel
|
| 68 |
Study of trap centres in silicon nanocrystal memories
|
Souifi, A.
|
|
2003
|
102 |
1-3 |
p. 99-107
9 p.
|
artikel
|
| 69 |
Subject Index
|
|
|
2003
|
102 |
1-3 |
p. 415-422
8 p.
|
artikel
|
| 70 |
Surface states and band-to-band non-radiative transitions in silicon single crystal investigated by piezoelectric photothermal spectroscopy
|
Memon, Aftab A.
|
|
2003
|
102 |
1-3 |
p. 12-15
4 p.
|
artikel
|
| 71 |
Systematic positron study of hydrophilicity of the internal pore surface in ordered low-k silica thin films
|
Galindo, R.Escobar
|
|
2003
|
102 |
1-3 |
p. 403-408
6 p.
|
artikel
|
| 72 |
Temperature behaviour of extended defects in solar grade silicon investigated by photoluminescence and EBIC
|
Arguirov, Tz.
|
|
2003
|
102 |
1-3 |
p. 251-256
6 p.
|
artikel
|
| 73 |
The evolution of cavities in Si co-implanted with Si and He ions1
|
Liu, Changlong
|
|
2003
|
102 |
1-3 |
p. 75-79
5 p.
|
artikel
|
| 74 |
Thermal recovery of amorphous zones in 6H-SiC and 3C-SiC induced by low fluence 420 keV Xe irradiation
|
Bus, T
|
|
2003
|
102 |
1-3 |
p. 269-276
8 p.
|
artikel
|
| 75 |
Time-resolved ion beam-induced charge collection measurement of minority carrier lifetime in semiconductor power devices by using Gunn's theorem
|
Manfredotti, C.
|
|
2003
|
102 |
1-3 |
p. 193-197
5 p.
|
artikel
|
| 76 |
Transmission electron microscopy and EDS analysis of screen-printed contacts formation on multicrystalline silicon solar cells
|
Thuillier, B.
|
|
2003
|
102 |
1-3 |
p. 58-62
5 p.
|
artikel
|
| 77 |
Transmission electron microscopy investigation of oxygen precipitation in Czochralski silicon annealed under high pressure
|
Xu, Jin
|
|
2003
|
102 |
1-3 |
p. 84-87
4 p.
|
artikel
|
| 78 |
Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy
|
Giannazzo, F.
|
|
2003
|
102 |
1-3 |
p. 148-151
4 p.
|
artikel
|
| 79 |
Ultrathin oxides for the SCM analysis of sub-micron doping profiles
|
Ciampolini, Lorenzo
|
|
2003
|
102 |
1-3 |
p. 113-118
6 p.
|
artikel
|
| 80 |
UV scanning photoluminescence spectroscopy applied to silicon carbide characterisation
|
Bluet, J.M.
|
|
2003
|
102 |
1-3 |
p. 277-283
7 p.
|
artikel
|
| 81 |
Variation of light emitting properties of ZnO thin films depending on post-annealing temperature
|
Kang, Hong Seong
|
|
2003
|
102 |
1-3 |
p. 313-316
4 p.
|
artikel
|
| 82 |
Volume and grain boundary diffusivity of boron in polycristalline silicon during rapid thermal annealing
|
Merabet, A.
|
|
2003
|
102 |
1-3 |
p. 257-261
5 p.
|
artikel
|
| 83 |
X-ray diffuse scattering investigation of thin films
|
Logothetidis, S.
|
|
2003
|
102 |
1-3 |
p. 25-29
5 p.
|
artikel
|
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