| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Comment on “on the use of oxides for thermoelectric refrigeration”
|
Mason, Thomas O.
|
|
1991
|
10 |
3 |
p. 257-259
3 p.
|
artikel
|
| 2 |
Deformation behavior of CdTe and (Cd, Zn)Te single crystals between 200 and 600 °C
|
Rai, R.S.
|
|
1991
|
10 |
3 |
p. 219-225
7 p.
|
artikel
|
| 3 |
Dislocation profiles in silicon-doped GaAs single crystals
|
Moravec, F.
|
|
1991
|
10 |
3 |
p. 217-218
2 p.
|
artikel
|
| 4 |
Dry-etching techniques and chemistries for III–V semiconductors
|
Pearton, S.J.
|
|
1991
|
10 |
3 |
p. 187-196
10 p.
|
artikel
|
| 5 |
Laser-fused refractory oxides for optical coatings
|
Swarnalatha, M.
|
|
1991
|
10 |
3 |
p. 241-246
6 p.
|
artikel
|
| 6 |
Microstructure and electrical characteristics of tungsten and WSi x contacts to GaAs
|
Basile, D.P.
|
|
1991
|
10 |
3 |
p. 171-179
9 p.
|
artikel
|
| 7 |
Point defect thermal equilibria in GaAs
|
Tan, T.Y.
|
|
1991
|
10 |
3 |
p. 227-239
13 p.
|
artikel
|
| 8 |
Relationship between dislocation generation, vapour phase supersaturation and growth rate in InP layers obtained by vapour phase epitaxy
|
Frigeri, C.
|
|
1991
|
10 |
3 |
p. 197-207
11 p.
|
artikel
|
| 9 |
Reply to comment on “on the use of oxides for thermoelectric refrigeration”
|
Macklin, W.J.
|
|
1991
|
10 |
3 |
p. 260-
1 p.
|
artikel
|
| 10 |
Silicon homoepitaxy using photochemical vapor deposition: a reflection high energy electron diffraction and transmission electron microscopy study
|
Lian, S.
|
|
1991
|
10 |
3 |
p. 181-186
6 p.
|
artikel
|
| 11 |
The reactions of Bi(PbSrCaCuOAg supercnducting microcomposites placed in contact with silver, gold, palladium, nickel, copper and platinum substrates
|
Gao, Wei
|
|
1991
|
10 |
3 |
p. 247-255
9 p.
|
artikel
|
| 12 |
Thermal mixing of thin multilayered Pt/Mn/Sb films
|
Hayashi, N.
|
|
1991
|
10 |
3 |
p. 209-215
7 p.
|
artikel
|
Tijdschrift beschrijving