| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An investigation of electron energy loss spectroscopy used for composition analysis of crystalline and amorphous silicides
|
Barbour, J.C.
|
|
1984
|
14 |
1-2 |
p. 79-84
6 p.
|
artikel
|
| 2 |
Bonding geometries at semiconductor surfaces and interfaces
|
Schluter, M.
|
|
1984
|
14 |
1-2 |
p. 89-96
8 p.
|
artikel
|
| 3 |
Diffraction and microscopy studies of the atomic structure of grain boundaries
|
Lamarre, P.
|
|
1984
|
14 |
1-2 |
p. 11-26
16 p.
|
artikel
|
| 4 |
Editorial Board
|
|
|
1984
|
14 |
1-2 |
p. IFC-
1 p.
|
artikel
|
| 5 |
Electronic structure and the properties of interfaces
|
Harrison, Walter A.
|
|
1984
|
14 |
1-2 |
p. 85-87
3 p.
|
artikel
|
| 6 |
Electron microscopy of interfacial dislocations
|
Clark, William A.T.
|
|
1984
|
14 |
1-2 |
p. 47-50
4 p.
|
artikel
|
| 7 |
Electron microscopy study of the AuGe/Ni/Au contacts on GaAs and GaAlAs
|
Liliental, Z.
|
|
1984
|
14 |
1-2 |
p. 135-144
10 p.
|
artikel
|
| 8 |
Foreword
|
Krivanek, Ondrej
|
|
1984
|
14 |
1-2 |
p. IX-X
nvt p.
|
artikel
|
| 9 |
Grain boundary-solute interactions in polycrystalline silicon and germanium
|
Smith, D.A.
|
|
1984
|
14 |
1-2 |
p. 131-134
4 p.
|
artikel
|
| 10 |
High resolution electron microscopy of interfaces between epitaxial thin films and semiconductors
|
Gibson, J.M.
|
|
1984
|
14 |
1-2 |
p. 1-10
10 p.
|
artikel
|
| 11 |
HREM imaging and microanalysis of a III-V semiconductor/oxide interface
|
Krivanek, O.L.
|
|
1984
|
14 |
1-2 |
p. 121-126
6 p.
|
artikel
|
| 12 |
HREM of SiP precipitates at the (111) silicon surface during phosphorus predeposition
|
Bourret, A.
|
|
1984
|
14 |
1-2 |
p. 97-106
10 p.
|
artikel
|
| 13 |
Ion scattering analysis of interfaces
|
Feldman, L.C.
|
|
1984
|
14 |
1-2 |
p. 51-54
4 p.
|
artikel
|
| 14 |
Microdiffraction and stem of interfaces
|
Cowley, J.M.
|
|
1984
|
14 |
1-2 |
p. 27-35
9 p.
|
artikel
|
| 15 |
On the study of the structure of grain boundaries in metals
|
Balluffi, R.W.
|
|
1984
|
14 |
1-2 |
p. 155-160
6 p.
|
artikel
|
| 16 |
On the use of secondary ion mass spectrometry in semiconductor device materials and process development
|
Magee, Charles W.
|
|
1984
|
14 |
1-2 |
p. 55-63
9 p.
|
artikel
|
| 17 |
Resolving composition variations at interfaces by STEM
|
Vander Sande, John B.
|
|
1984
|
14 |
1-2 |
p. 65-74
10 p.
|
artikel
|
| 18 |
Silicide/silicon interface bonding
|
Rubloff, G.W.
|
|
1984
|
14 |
1-2 |
p. 107-119
13 p.
|
artikel
|
| 19 |
Structure of grain boundaries in ceramics
|
Rühle, M.
|
|
1984
|
14 |
1-2 |
p. 37-46
10 p.
|
artikel
|
| 20 |
The depth resolution of sputter profiling
|
King, B.V.
|
|
1984
|
14 |
1-2 |
p. 75-78
4 p.
|
artikel
|
| 21 |
The measurement of boundary displacements in metals
|
Stobbs, W.M.
|
|
1984
|
14 |
1-2 |
p. 145-154
10 p.
|
artikel
|
| 22 |
Theory of Si/transition-metal silicide schottky barriers
|
Sankey, Otto F.
|
|
1984
|
14 |
1-2 |
p. 127-130
4 p.
|
artikel
|
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