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                             44 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comparison on radiation tolerance of 〈100〉 and 〈111〉 silicon substrates of microstrip detectors Calefato, G.
 2002
 476 3 p. 744-750
7 p.
 artikel
2 Atomic structure and electronic states of extended defects in silicon Riedel, Frank
 2002
 476 3 p. 596-606
11 p.
 artikel
3 Author Index 2002
 476 3 p. 801-819
19 p.
 artikel
4 Author Index Vol. 476/3 2002
 476 3 p. 791-800
10 p.
 artikel
5 Bistable damage in neutron-irradiated silicon diodes Cindro, V.
 2002
 476 3 p. 565-568
4 p.
 artikel
6 Characterization of indium and solder bump bonding for pixel detectors Cihangir, S
 2002
 476 3 p. 670-675
6 p.
 artikel
7 Characterization of neutron irradiated silicon microstrip detectors Buffini, A
 2002
 476 3 p. 734-738
5 p.
 artikel
8 Committees 2002
 476 3 p. vii-
1 p.
 artikel
9 Contents 2002
 476 3 p. xi-xiii
nvt p.
 artikel
10 CVD diamond for nuclear detection applications Bergonzo, P
 2002
 476 3 p. 694-700
7 p.
 artikel
11 Determination of effective trapping times for electrons and holes in irradiated silicon Kramberger, G
 2002
 476 3 p. 645-651
7 p.
 artikel
12 Effect of differential bias on the transport of electrons in coplanar grid CdZnTe detectors Prettyman, T.H
 2002
 476 3 p. 658-664
7 p.
 artikel
13 Effect of radiation induced deep level traps on Si detector performance Eremin, V
 2002
 476 3 p. 537-549
13 p.
 artikel
14 Electrical characterization of a radiation-hardened silicon pixel design for CMS Xie, X.B
 2002
 476 3 p. 665-669
5 p.
 artikel
15 Electric field distribution in irradiated silicon detectors Castaldini, A
 2002
 476 3 p. 550-555
6 p.
 artikel
16 Electric field profiling by current transients in silicon diodes Menichelli, D
 2002
 476 3 p. 614-620
7 p.
 artikel
17 High-resolution photoinduced transient spectroscopy of neutron irradiated bulk silicon Kozłowski, R
 2002
 476 3 p. 639-644
6 p.
 artikel
18 Investigation on the charge collection properties of a 4H-SiC Schottky diode detector Verzellesi, G
 2002
 476 3 p. 717-721
5 p.
 artikel
19 Irradiation tests of the pixel front-end readout electronics for the ALICE experiment at LHC Badalà, A.
 2002
 476 3 p. 765-769
5 p.
 artikel
20 Lattice damage caused by the irradiation of diamond Campbell, Brendan
 2002
 476 3 p. 680-685
6 p.
 artikel
21 List of Participants 2002
 476 3 p. viii-ix
nvt p.
 artikel
22 Measurements of charge collection profiles in virgin and strongly irradiated silicon diodes by means of the micro-IBICC technique Vittone, E
 2002
 476 3 p. 607-613
7 p.
 artikel
23 [No title] Borchi, Emilio
 2002
 476 3 p. v-vi
nvt p.
 artikel
24 Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector Alessandro, B
 2002
 476 3 p. 758-764
7 p.
 artikel
25 Parasitic capacitances in thick-substrate silicon microstrip detectors Passeri, D
 2002
 476 3 p. 751-757
7 p.
 artikel
26 Performance of irradiated CVD diamond micro-strip sensors Adam, W
 2002
 476 3 p. 706-712
7 p.
 artikel
27 Performance of 500 μm thick silicon microstrip detectors after irradiation Dutta, S.
 2002
 476 3 p. 739-743
5 p.
 artikel
28 Radiation damage induced by γ irradiation on Ce3+ doped phosphate and silicate scintillating glasses Baccaro, S
 2002
 476 3 p. 785-789
5 p.
 artikel
29 Radiation effects on II–VI compound-based detectors Cavallini, A
 2002
 476 3 p. 770-778
9 p.
 artikel
30 Radiation hard detectors from silicon enriched with both oxygen and thermal donors: improvements in donor removal and long-term stability with regard to neutron irradiation Li, Z.
 2002
 476 3 p. 628-638
11 p.
 artikel
31 Radiation hardness of cryogenic silicon detectors Niinikoski, T.O
 2002
 476 3 p. 569-582
14 p.
 artikel
32 Radiation hardness studies of cooling fluids epoxies and capacitors for CMS pixel system Atac, M
 2002
 476 3 p. 676-679
4 p.
 artikel
33 Radiation issues in the Gamma-ray Large Area Space Telescope GLAST Sadrozinski, Hartmut F.-W
 2002
 476 3 p. 722-728
7 p.
 artikel
34 Radiation tolerance of CVD diamond detectors for pions and protons Adam, W
 2002
 476 3 p. 686-693
8 p.
 artikel
35 RESMDD 2000–F2K Borchi, Emilio
 2002
 476 3 p. iii-
1 p.
 artikel
36 Results with microstrip detectors produced by STMicroelectronics for the CMS tracker Segneri, G.
 2002
 476 3 p. 729-733
5 p.
 artikel
37 Silicon detectors irradiated “in situ” at cryogenic temperatures Ruggiero, G
 2002
 476 3 p. 583-587
5 p.
 artikel
38 Silicon planar MESA diodes as radiation detectors Houdayer, A
 2002
 476 3 p. 588-595
8 p.
 artikel
39 Systematic study of pre-irradiation effects in high efficiency CVD diamond nuclear particle detectors Marinelli, Marco
 2002
 476 3 p. 701-705
5 p.
 artikel
40 The future of the SIRAD SEE facility: Ion–Electron Emission Microscopy Wyss, J.
 2002
 476 3 p. 621-627
7 p.
 artikel
41 The origin of double peak electric field distribution in heavily irradiated silicon detectors Eremin, V
 2002
 476 3 p. 556-564
9 p.
 artikel
42 Thermally stimulated current method applied to highly irradiated silicon diodes Pintilie, I
 2002
 476 3 p. 652-657
6 p.
 artikel
43 Thermoluminescence characterisation of chemical vapour deposited diamond films Mazzocchi, S
 2002
 476 3 p. 713-716
4 p.
 artikel
44 TLD-100 glow-curve deconvolution for the evaluation of the thermal stress and radiation damage effects Sabini, M.G
 2002
 476 3 p. 779-784
6 p.
 artikel
                             44 gevonden resultaten
 
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