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                             57 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A 240-channel thick film multi-chip module for readout of silicon drift detectors Lynn, D.
 2000
 439 2-3 p. 418-426
9 p.
 artikel
2 A fast calculation algorithm for the charge transfer loss in CCDs Krause, N
 2000
 439 2-3 p. 560-566
7 p.
 artikel
3 An analytical description of low-energy X-ray spectra in Si(Li) and HPGe detectors Lowe, B.G.
 2000
 439 2-3 p. 247-261
15 p.
 artikel
4 A novel VLSI processor 1 Patent pending #MI98A000330. 1 for high-rate, high resolution spectroscopy Pullia, A.
 2000
 439 2-3 p. 385-390
6 p.
 artikel
5 A programmable, low noise, multichannel ASIC for readout of pixelated amorphous silicon arrays Yarema, R.J.
 2000
 439 2-3 p. 413-417
5 p.
 artikel
6 Bipolar feedback transistor integrated on detector with JFET for continuous reset Sampietro, M.
 2000
 439 2-3 p. 368-372
5 p.
 artikel
7 Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection Verbitskaya, E.
 2000
 439 2-3 p. 634-646
13 p.
 artikel
8 Comparison of methods of measuring the primary charge-cloud shape produced by an X-ray photon inside the CCD Tsunemi, H
 2000
 439 2-3 p. 592-600
9 p.
 artikel
9 Cooled CCDs for recording data from electron microscopes Faruqi, A.R.
 2000
 439 2-3 p. 606-610
5 p.
 artikel
10 Coplanar-grid CdZnTe detector with three-dimensional position sensitivity Luke, P.N.
 2000
 439 2-3 p. 611-618
8 p.
 artikel
11 Current and capacitance measurements as a fast diagnostic tool for evaluation of semiconductor parameters Kemmer, J.
 2000
 439 2-3 p. 199-207
9 p.
 artikel
12 Current mirror reset for low-power BiCMOS charge amplifier Sampietro, M.
 2000
 439 2-3 p. 373-377
5 p.
 artikel
13 Design and test of pixel sensors for operation in severe radiation environments Hügging, F.
 2000
 439 2-3 p. 529-535
7 p.
 artikel
14 Design and test of radiation hard p+n silicon strip detectors for the ATLAS SCT Andricek, L.
 2000
 439 2-3 p. 427-441
15 p.
 artikel
15 Determination of the electron–hole pair creation energy for semiconductors from the spectral responsivity of photodiodes Scholze, F.
 2000
 439 2-3 p. 208-215
8 p.
 artikel
16 Development of CdZnTe X-ray detectors at DSRI van Pamelen, M.A.J.
 2000
 439 2-3 p. 625-633
9 p.
 artikel
17 Development of cryogenic detectors for high-resolution particle and radiation detection Wänninger, S.
 2000
 439 2-3 p. 662-665
4 p.
 artikel
18 Double-sided microstrip detectors for the high radiation environment in the HERA-B experiment Abt, I.
 2000
 439 2-3 p. 442-450
9 p.
 artikel
19 Effects of charge sharing in 3-D position sensitive CdZnTe gamma-ray spectrometers He, Z.
 2000
 439 2-3 p. 619-624
6 p.
 artikel
20 Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p–n Si junctions using optical charging spectroscopy Pintilie, I.
 2000
 439 2-3 p. 221-227
7 p.
 artikel
21 Experimental study of the response of semiconductor detectors to low-energy photons Lépy, M.C.
 2000
 439 2-3 p. 239-246
8 p.
 artikel
22 Fabrication, test and performance of very large X-ray CCDs designed for astrophysical applications Soltau, H.
 2000
 439 2-3 p. 547-559
13 p.
 artikel
23 Fast silicon drift photodiodes free from bias connections on the light entering side Castoldi, A.
 2000
 439 2-3 p. 483-496
14 p.
 artikel
24 Forward-bias operation of Si detectors: Beattie, L.J.
 2000
 439 2-3 p. 293-302
10 p.
 artikel
25 High-voltage performance of silicon detectors irradiated under bias Bloch, Ph.
 2000
 439 2-3 p. 344-348
5 p.
 artikel
26 Impact of the divacancy (?) on the generation-recombination properties of 10 MeV proton irradiated Float-Zone silicon diodes Simoen, E.
 2000
 439 2-3 p. 310-318
9 p.
 artikel
27 Index 2000
 439 2-3 p. 681-685
5 p.
 artikel
28 Index 2000
 439 2-3 p. 666-680
15 p.
 artikel
29 Investigation of trapping levels in standard, nitrogenated and oxygenated Si p–n junctions by thermally stimulated currents Pintilie, I.
 2000
 439 2-3 p. 303-309
7 p.
 artikel
30 Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration Moll, M.
 2000
 439 2-3 p. 282-292
11 p.
 artikel
31 Laboratory and test beam results from a large-area silicon drift detector Bonvicini, V.
 2000
 439 2-3 p. 476-482
7 p.
 artikel
32 Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip Snoeys, W.
 2000
 439 2-3 p. 349-360
12 p.
 artikel
33 Metal contamination analysis of the epitaxial starting material for scientific CCDs Krause, N.
 2000
 439 2-3 p. 228-238
11 p.
 artikel
34 Modeling and optimization of InGaAs infrared photovoltaic detectors Piotrowski, J.
 2000
 439 2-3 p. 647-650
4 p.
 artikel
35 Modeling the energy response of pn-CCDs in the 0.2–10 keV band Popp, M.
 2000
 439 2-3 p. 567-574
8 p.
 artikel
36 Modified Poisson solver for the simulation of the silicon–oxide interface in semiconductor detectors Castoldi, A.
 2000
 439 2-3 p. 275-281
7 p.
 artikel
37 Noise limits in a front-end system based on time-over-threshold signal processing Manfredi, P.F.
 2000
 439 2-3 p. 361-367
7 p.
 artikel
38 Numerical analysis of edge effects in side illuminated strip detectors for digital radiology Križaj, D.
 2000
 439 2-3 p. 451-457
7 p.
 artikel
39 Particle and X-ray damage in pn-CCDs Meidinger, Norbert
 2000
 439 2-3 p. 319-336
18 p.
 artikel
40 Performance of an X-ray spectroscopic system based on a double-gate double-feedback charge preamplifier Fazzi, A.
 2000
 439 2-3 p. 391-402
12 p.
 artikel
41 Pixel readout electronics for LHC and biomedical applications Blanquart, L.
 2000
 439 2-3 p. 403-412
10 p.
 artikel
42 Quasi-optimum γ and X spectroscopy based on real-time digital techniques Pullia, A.
 2000
 439 2-3 p. 378-384
7 p.
 artikel
43 Readout of non-irradiated and irradiated strip detectors with fast analogue electronics Cindro, V.
 2000
 439 2-3 p. 337-343
7 p.
 artikel
44 Silicon drift detectors for the STAR/SVT experiment at RHIC Takahashi, J.
 2000
 439 2-3 p. 497-506
10 p.
 artikel
45 Silicon drift detector with reduced lateral diffusion: Šonský, J.
 2000
 439 2-3 p. 513-518
6 p.
 artikel
46 Silicon pixel detector for the TTF-FEL beam trajectory monitor Ng, J.S.T.
 2000
 439 2-3 p. 601-605
5 p.
 artikel
47 Spectroscopic measurements with a silicon drift detector having a continuous implanted drift cathode-voltage divider Bonvicini, V.
 2000
 439 2-3 p. 471-475
5 p.
 artikel
48 Studies of dynamics of electron clouds in STAR silicon drift detectors Bellwied, R.
 2000
 439 2-3 p. 507-512
6 p.
 artikel
49 Study of edge effects in the breakdown process of p+ on n-bulk silicon diodes Militaru, O.
 2000
 439 2-3 p. 262-269
8 p.
 artikel
50 Study of GaAs as a material for solar neutrino detectors Markov, A.V.
 2000
 439 2-3 p. 651-661
11 p.
 artikel
51 Synchrotron calibration and response modelling of back-illuminated XMM-RGS CCDs Bootsma, T.M.V.
 2000
 439 2-3 p. 575-581
7 p.
 artikel
52 TCAD optimization of charge collection efficiency in silicon microstrip detectors Passeri, D.
 2000
 439 2-3 p. 270-274
5 p.
 artikel
53 The controlled-drift detector Castoldi, A.
 2000
 439 2-3 p. 519-528
10 p.
 artikel
54 The LHC1 pixel detector studied in a 120GeV/c pion test beam Ropotar, I.
 2000
 439 2-3 p. 536-546
11 p.
 artikel
55 The physics of the low-energy tail in the ACIS CCD Prigozhin, G.
 2000
 439 2-3 p. 582-591
10 p.
 artikel
56 The quantum efficiency of pn-detectors from the near infrared to the soft X-ray region Hartmann, R.
 2000
 439 2-3 p. 216-220
5 p.
 artikel
57 Works of art investigation with silicon drift detectors Leutenegger, P.
 2000
 439 2-3 p. 458-470
13 p.
 artikel
                             57 gevonden resultaten
 
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