| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A CAD investigation of depletion mechanisms in irradiated silicon microstrip detectors
|
Passeri, D.
|
|
1999
|
426 |
1 |
p. 131-134
4 p.
|
artikel
|
| 2 |
Analysis of divacancy related traps induced by proton, neutron and gamma radiation in high resistivity silicon detectors 1 The investigation established and supported in part by ROSE collaboration (CERN, RD48) and supported in part by the US Department of Energy: Contract No. DE-AC02-76CH00016. 1
|
Eremin, V.
|
|
1999
|
426 |
1 |
p. 120-125
6 p.
|
artikel
|
| 3 |
Beta environmental fine structure characterization of defects
|
Benedek, G.
|
|
1999
|
426 |
1 |
p. 147-155
9 p.
|
artikel
|
| 4 |
Charge collection efficiency of irradiated n+n wedge silicon microstrip detectors for ATLAS
|
Martı́ i Garcia, S.
|
|
1999
|
426 |
1 |
p. 24-27
4 p.
|
artikel
|
| 5 |
Conference
|
|
|
1999
|
426 |
1 |
p. ix-
1 p.
|
artikel
|
| 6 |
Conference
|
|
|
1999
|
426 |
1 |
p. xi-xii
nvt p.
|
artikel
|
| 7 |
Defect analysis of silicon detectors made of different materials for radiation hardness 1 This investigation was done as a part of work established and supported by the Rose Collaboration (RD48, CERN), and was supported in part by the US Department of Energy: Contract No: DE-AC02-98CH10886. 1
|
Dezillie, B
|
|
1999
|
426 |
1 |
p. 114-119
6 p.
|
artikel
|
| 8 |
Editorial
|
|
|
1999
|
426 |
1 |
p. vii-viii
nvt p.
|
artikel
|
| 9 |
Electrical characterization of irradiated medium resistivity n+/n/p+ pixel detectors
|
Chen, W
|
|
1999
|
426 |
1 |
p. 47-50
4 p.
|
artikel
|
| 10 |
Electrical characterization of standard and oxygenated irradiated ROSE diodes
|
Augelli, V.
|
|
1999
|
426 |
1 |
p. 81-86
6 p.
|
artikel
|
| 11 |
Electric field and space-charge distribution in SI GaAs: effect of high-energy proton irradiation
|
Castaldini, A
|
|
1999
|
426 |
1 |
p. 192-196
5 p.
|
artikel
|
| 12 |
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors
|
Nava, F.
|
|
1999
|
426 |
1 |
p. 185-191
7 p.
|
artikel
|
| 13 |
Facilities for gamma and neutron irradiations
|
Kegel, Gunter H.R
|
|
1999
|
426 |
1 |
p. 61-67
7 p.
|
artikel
|
| 14 |
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2×1014 n/cm2
|
Li, Zheng
|
|
1999
|
426 |
1 |
p. 38-46
9 p.
|
artikel
|
| 15 |
Heavy ion and proton test site at JYFL-accelerator laboratory
|
Virtanen, A
|
|
1999
|
426 |
1 |
p. 68-71
4 p.
|
artikel
|
| 16 |
IBIC investigation of radiation-induced effects in CVD and natural diamond
|
Manfredotti, C
|
|
1999
|
426 |
1 |
p. 156-163
8 p.
|
artikel
|
| 17 |
Index
|
|
|
1999
|
426 |
1 |
p. 221-228
8 p.
|
artikel
|
| 18 |
Leakage current of hadron irradiated silicon detectors – material dependence
|
Moll, M.
|
|
1999
|
426 |
1 |
p. 87-93
7 p.
|
artikel
|
| 19 |
Liquid He cooled silicon for radiation-hard hybrid superconducting pixel detectors
|
Palmieri, V.G
|
|
1999
|
426 |
1 |
p. 56-60
5 p.
|
artikel
|
| 20 |
Luminescence and conductivity studies on CVD diamond exposed to UV light
|
Bizzarri, A
|
|
1999
|
426 |
1 |
p. 169-172
4 p.
|
artikel
|
| 21 |
Luminescence and electrophysical characteristics of ZnSe implanted with acceptor impurities
|
Georgobiani, A.N
|
|
1999
|
426 |
1 |
p. 164-168
5 p.
|
artikel
|
| 22 |
Modelling of observed double-junction effect
|
Menichelli, D.
|
|
1999
|
426 |
1 |
p. 135-139
5 p.
|
artikel
|
| 23 |
New experimental and analysis methods in I-DLTS
|
Pandey, S.U
|
|
1999
|
426 |
1 |
p. 109-113
5 p.
|
artikel
|
| 24 |
New irradiation zones at the CERN-PS
|
Glaser, M
|
|
1999
|
426 |
1 |
p. 72-77
6 p.
|
artikel
|
| 25 |
Noise studies of n-strip on n-bulk silicon microstrip detectors using fast binary readout electronics after irradiation to 3×1014 pcm−2
|
Robinson, D.
|
|
1999
|
426 |
1 |
p. 28-33
6 p.
|
artikel
|
| 26 |
Operation of guard rings on the ohmic side of n+–p–p+ diodes
|
Egorov, N.
|
|
1999
|
426 |
1 |
p. 197-205
9 p.
|
artikel
|
| 27 |
Performance of irradiated silicon microstrip detectors
|
Catacchini, E.
|
|
1999
|
426 |
1 |
p. 34-37
4 p.
|
artikel
|
| 28 |
Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC
|
Meier, D.
|
|
1999
|
426 |
1 |
p. 173-180
8 p.
|
artikel
|
| 29 |
Radiation damage effect on avalanche photodiodes
|
Baccaro, S.
|
|
1999
|
426 |
1 |
p. 206-211
6 p.
|
artikel
|
| 30 |
Radiation damage on p-type silicon detectors
|
Pirollo, S
|
|
1999
|
426 |
1 |
p. 126-130
5 p.
|
artikel
|
| 31 |
Radiation damage tests of GaAs HV switches for MSGCs bias control
|
Bisogni, M.G.
|
|
1999
|
426 |
1 |
p. 216-220
5 p.
|
artikel
|
| 32 |
Radiation hardness of silicon detectors – a challenge from high-energy physics
|
Lindström, G.
|
|
1999
|
426 |
1 |
p. 1-15
15 p.
|
artikel
|
| 33 |
Spreading resistance and C-DLTS spectra of proton-irradiated mesa diodes made on thick epitaxial Si layers
|
Nossarzewska-Orłowska, E
|
|
1999
|
426 |
1 |
p. 78-80
3 p.
|
artikel
|
| 34 |
Studies of radiation hardness of oxygen enriched silicon detectors
|
Ruzin, A.
|
|
1999
|
426 |
1 |
p. 94-98
5 p.
|
artikel
|
| 35 |
Study of charge transport in non-irradiated and irradiated silicon detectors
|
Leroy, C.
|
|
1999
|
426 |
1 |
p. 99-108
10 p.
|
artikel
|
| 36 |
Study of evolution of active volume in irradiated silicon detectors
|
Casse, G.
|
|
1999
|
426 |
1 |
p. 140-146
7 p.
|
artikel
|
| 37 |
The CMS silicon microstrip detectors: research and development
|
Bacchetta, N.
|
|
1999
|
426 |
1 |
p. 16-23
8 p.
|
artikel
|
| 38 |
The properties of ITE's silicon avalanche photodiodes within the spectral range used in scintillation detection
|
Wegrzecka, Iwona
|
|
1999
|
426 |
1 |
p. 212-215
4 p.
|
artikel
|
| 39 |
Time development and flux dependence of neutron-irradiation induced defects in silicon pad detectors
|
Žontar, D
|
|
1999
|
426 |
1 |
p. 51-55
5 p.
|
artikel
|
| 40 |
TSC response of irradiated CVD diamond films
|
Borchi, E
|
|
1999
|
426 |
1 |
p. 181-184
4 p.
|
artikel
|
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