| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of the active layer in SI GaAs Schottky diodes
|
Castaldini, A
|
|
1998
|
410 |
1 |
p. 79-84
6 p.
|
artikel
|
| 2 |
Author index
|
|
|
1998
|
410 |
1 |
p. 129-132
4 p.
|
artikel
|
| 3 |
Beam test measurements on GaAs strip and pixel detectors
|
Albertz, D
|
|
1998
|
410 |
1 |
p. 1-5
5 p.
|
artikel
|
| 4 |
Carrier lifetime under low and high electric field conditions in semi-insulating GaAs
|
Rogalla, M
|
|
1998
|
410 |
1 |
p. 74-78
5 p.
|
artikel
|
| 5 |
Characterisation of low-pressure VPE GaAs diodes before and after 24 GeV/c proton irradiation
|
Bates, R.L
|
|
1998
|
410 |
1 |
p. 46-53
8 p.
|
artikel
|
| 6 |
Committees and sponsors
|
|
|
1998
|
410 |
1 |
p. viii-
1 p.
|
artikel
|
| 7 |
CVD diamond detectors
|
Manfredotti, C
|
|
1998
|
410 |
1 |
p. 96-99
4 p.
|
artikel
|
| 8 |
Defects and radiation damage in semi-insulating GaAs radiation detectors
|
Vaitkus, J
|
|
1998
|
410 |
1 |
p. 61-67
7 p.
|
artikel
|
| 9 |
Editorial
|
D'Auria, Saverio
|
|
1998
|
410 |
1 |
p. vii-
1 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
1998
|
410 |
1 |
p. ii-iii
nvt p.
|
artikel
|
| 11 |
Electric field and plasma effects on proton-irradiated GaAs detector performance
|
Nava, F
|
|
1998
|
410 |
1 |
p. 68-73
6 p.
|
artikel
|
| 12 |
Energy resolution in GaAs X- and γ-ray detectors
|
Bertuccio, G
|
|
1998
|
410 |
1 |
p. 29-35
7 p.
|
artikel
|
| 13 |
Experimental results on GaAs switching devices for HEP
|
Bisogni, M.G
|
|
1998
|
410 |
1 |
p. 26-28
3 p.
|
artikel
|
| 14 |
Gallium arsenide AC-coupled microstrip detectors with integrated resistors
|
Bates, R.L
|
|
1998
|
410 |
1 |
p. 19-25
7 p.
|
artikel
|
| 15 |
Gallium arsenide pixel detectors
|
Bates, R
|
|
1998
|
410 |
1 |
p. 6-11
6 p.
|
artikel
|
| 16 |
Gallium arsenide telescope for measuring the time of flight of ionizing particles
|
Codino, Antonio
|
|
1998
|
410 |
1 |
p. 12-18
7 p.
|
artikel
|
| 17 |
Homogeneity of CdZnTe detectors
|
Hermon, H
|
|
1998
|
410 |
1 |
p. 100-106
7 p.
|
artikel
|
| 18 |
Investigation of transport and charge collection in particle detectors based on compensated GaAs
|
Khludkov, S.S
|
|
1998
|
410 |
1 |
p. 36-40
5 p.
|
artikel
|
| 19 |
In view of low-noise and low-power GaAs front-ends
|
De Geronimo, G
|
|
1998
|
410 |
1 |
p. 124-128
5 p.
|
artikel
|
| 20 |
Light emitted GaAs particle detectors
|
Požela, J
|
|
1998
|
410 |
1 |
p. 111-114
4 p.
|
artikel
|
| 21 |
List of participants
|
|
|
1998
|
410 |
1 |
p. ix-xi
nvt p.
|
artikel
|
| 22 |
Radiation damage due to pions and protons in SI-GaAs and their influence on the detector performance
|
Rogalla, M
|
|
1998
|
410 |
1 |
p. 41-45
5 p.
|
artikel
|
| 23 |
Radiation-hard polycrystalline mercuric iodide semiconductor particle counters
|
Schieber, M
|
|
1998
|
410 |
1 |
p. 107-110
4 p.
|
artikel
|
| 24 |
Results of GaAs detector irradiation at the mixed beam neutrino cave at CERN
|
Chmill, V.B
|
|
1998
|
410 |
1 |
p. 54-60
7 p.
|
artikel
|
| 25 |
Reverse current in SI GaAs pixel detectors
|
Cola, A
|
|
1998
|
410 |
1 |
p. 85-91
7 p.
|
artikel
|
| 26 |
Technology development of 3-D GaAs radiation detectors
|
Meikle, A.R
|
|
1998
|
410 |
1 |
p. 115-123
9 p.
|
artikel
|
| 27 |
The impact of deep acceptors on the performance of VPE-GaAs X-ray detectors
|
Rogalla, M
|
|
1998
|
410 |
1 |
p. 92-95
4 p.
|
artikel
|
Tijdschrift beschrijving