| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative study of the thermoluminescent response to beta irradiation of CVD diamond and LiF dosimeters
|
Bogani, F
|
|
1997
|
388 |
3 |
p. 427-430
4 p.
|
artikel
|
| 2 |
Analysis of TSC spectra measured on silicon pad detectors after exposure to fast neutrons
|
Feick, H
|
|
1997
|
388 |
3 |
p. 323-329
7 p.
|
artikel
|
| 3 |
Author index
|
|
|
1997
|
388 |
3 |
p. 447-458
12 p.
|
artikel
|
| 4 |
Committees
|
|
|
1997
|
388 |
3 |
p. vi-
1 p.
|
artikel
|
| 5 |
Comparison of defects produced by fast neutrons and 60Co-gammas in high-resistivity silicon detectors using deep-level transient spectroscopy
|
Moll, M
|
|
1997
|
388 |
3 |
p. 335-339
5 p.
|
artikel
|
| 6 |
CV and Hall effect analysis on neutron irradiated silicon detectors
|
Biggeri, U
|
|
1997
|
388 |
3 |
p. 330-334
5 p.
|
artikel
|
| 7 |
Defect evolution in silicon detector material
|
MacEvoy, B.C
|
|
1997
|
388 |
3 |
p. 365-369
5 p.
|
artikel
|
| 8 |
Defects introduced in the electron irradiation of GaAs: Identification with the positron lifetime spectroscopy
|
Saarinen, K
|
|
1997
|
388 |
3 |
p. 434-439
6 p.
|
artikel
|
| 9 |
Direct observation and measurements of neutron-induced deep levels responsible for N eff changes in high-resistivity silicon detectors using TCT
|
Li, Z
|
|
1997
|
388 |
3 |
p. 297-307
11 p.
|
artikel
|
| 10 |
Editorial
|
Borchi, Emilio
|
|
1997
|
388 |
3 |
p. v-
1 p.
|
artikel
|
| 11 |
Evaluation of charged pions induced damage in the CMS silicon forward detectors
|
Biggeri, U
|
|
1997
|
388 |
3 |
p. 345-349
5 p.
|
artikel
|
| 12 |
Influence of temperature on the I-V and C-V characteristics of Si detectors irradiated at high fluences
|
Croitoru, N
|
|
1997
|
388 |
3 |
p. 340-344
5 p.
|
artikel
|
| 13 |
Investigation of damage-induced defects in silicon by TCT
|
Fretwurst, E
|
|
1997
|
388 |
3 |
p. 356-360
5 p.
|
artikel
|
| 14 |
Investigation of the radiation damage of GaAs detectors by protons, pions and neutrons
|
Tenbusch, F
|
|
1997
|
388 |
3 |
p. 383-389
7 p.
|
artikel
|
| 15 |
Issues for deep level models of bulk damage to silicon detectors
|
Hall, G
|
|
1997
|
388 |
3 |
p. 283-288
6 p.
|
artikel
|
| 16 |
List of participants
|
|
|
1997
|
388 |
3 |
p. vii-
1 p.
|
artikel
|
| 17 |
Measurements on a hole trap in neutron-irradiated silicon
|
Avset, Berit Sundby
|
|
1997
|
388 |
3 |
p. 361-364
4 p.
|
artikel
|
| 18 |
Measurements on GaAs strip and pixel detectors in a 50 GeV pion beam
|
Syben, O
|
|
1997
|
388 |
3 |
p. 408-411
4 p.
|
artikel
|
| 19 |
Neutron irradiation of cold GaAs devices and circuits made with an ion-implanted monolithic process
|
Battistoni, G
|
|
1997
|
388 |
3 |
p. 399-407
9 p.
|
artikel
|
| 20 |
Neutron irradiation of CVD diamond samples for tracking detectors
|
Husson, D
|
|
1997
|
388 |
3 |
p. 421-426
6 p.
|
artikel
|
| 21 |
Non-ionising energy loss of pions in thin silicon samples
|
Lazanu, I
|
|
1997
|
388 |
3 |
p. 370-374
5 p.
|
artikel
|
| 22 |
Proton radiation effects on SI LEC GaAs detector performances
|
Chiossi, C
|
|
1997
|
388 |
3 |
p. 379-382
4 p.
|
artikel
|
| 23 |
Radiation damage of π-ν GaAs structures
|
Chilingarov, A
|
|
1997
|
388 |
3 |
p. 395-398
4 p.
|
artikel
|
| 24 |
Radiation hardness of GaAs complementary heterojunction field effect transistors (CHFETs) and CHFET-based monolithic amplifiers
|
Tenbusch, F
|
|
1997
|
388 |
3 |
p. 412-416
5 p.
|
artikel
|
| 25 |
Radiation hardness of MSM biasing structures for GaAs microstrip detectors
|
Rente, C
|
|
1997
|
388 |
3 |
p. 390-394
5 p.
|
artikel
|
| 26 |
Radiation hardness of silicon detectors manufactured on wafers from various sources
|
Dezillie, B
|
|
1997
|
388 |
3 |
p. 314-317
4 p.
|
artikel
|
| 27 |
Radiation induced bulk damage in silicon diodes with pions and protons
|
Bacchetta, N
|
|
1997
|
388 |
3 |
p. 318-322
5 p.
|
artikel
|
| 28 |
Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons
|
Eremin, V
|
|
1997
|
388 |
3 |
p. 350-355
6 p.
|
artikel
|
| 29 |
Simulation of irradiation-induced surface effects in silicon detectors
|
Wunstorf, R
|
|
1997
|
388 |
3 |
p. 308-313
6 p.
|
artikel
|
| 30 |
Studies of a Poenitz-type black neutron detector as a neutron flux monitor
|
DeSimone, D.J
|
|
1997
|
388 |
3 |
p. 443-446
4 p.
|
artikel
|
| 31 |
Studies of neutron dosimetry
|
Kegel, G.H.R
|
|
1997
|
388 |
3 |
p. 440-442
3 p.
|
artikel
|
| 32 |
Study of charge collection and noise in non-irradiated and irradiated silicon detectors
|
Leroy, C
|
|
1997
|
388 |
3 |
p. 289-296
8 p.
|
artikel
|
| 33 |
Subject index
|
|
|
1997
|
388 |
3 |
p. 459-462
4 p.
|
artikel
|
| 34 |
The effect of impurities on the silicon detector's radiation hardness
|
Kuchinski, P
|
|
1997
|
388 |
3 |
p. 375-378
4 p.
|
artikel
|
| 35 |
The influence of the preliminary ion implantation in the ZnSe on the properties of the ZnOZnSe structures, obtained by the radical beam gettering epitaxy method
|
Georgobiani, A.N
|
|
1997
|
388 |
3 |
p. 431-433
3 p.
|
artikel
|
| 36 |
The role of the ohmic contact on the efficiency of gallium arsenide radiation detectors
|
Castaldini, A
|
|
1997
|
388 |
3 |
p. 417-420
4 p.
|
artikel
|
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