| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A CdTe gamma-camera for the space observatory INTEGRAL: software charge-loss corrections
|
Lebrun, F
|
|
1996
|
380 |
1-2 |
p. 414-418
5 p.
|
artikel
|
| 2 |
A 16-channel continuous charge amplifier with sparse readout
|
Prydderch, M.L
|
|
1996
|
380 |
1-2 |
p. 361-365
5 p.
|
artikel
|
| 3 |
A double-gate double-feedback JFET charge-sensitive preamplifier
|
Fazzi, Alberto
|
|
1996
|
380 |
1-2 |
p. 346-349
4 p.
|
artikel
|
| 4 |
Advancements in platelet growth
|
Phillips, James D
|
|
1996
|
380 |
1-2 |
p. 50-52
3 p.
|
artikel
|
| 5 |
A fax-machine amorphous silicon sensor for X-ray detection
|
Alberdi, J.
|
|
1996
|
380 |
1-2 |
p. 470-473
4 p.
|
artikel
|
| 6 |
A gamma camera based on CdTe detectors
|
Eisen, Y.
|
|
1996
|
380 |
1-2 |
p. 474-478
5 p.
|
artikel
|
| 7 |
Analysis of the output signal waveform and performances of semi-insulating GaAs particle detecors
|
Alberigi Quaranta, A
|
|
1996
|
380 |
1-2 |
p. 201-204
4 p.
|
artikel
|
| 8 |
A novel ASIC for readout electronics in semiconductor γ-ray detection
|
Bonnefoy, J.P
|
|
1996
|
380 |
1-2 |
p. 342-345
4 p.
|
artikel
|
| 9 |
A PC spectroscopy line simulation to validate new digital filtering algorithms
|
Trama, J.-C
|
|
1996
|
380 |
1-2 |
p. 93-96
4 p.
|
artikel
|
| 10 |
A pixel-like matrix for digital mammography
|
Arfelli, F
|
|
1996
|
380 |
1-2 |
p. 402-405
4 p.
|
artikel
|
| 11 |
Application of cadmium telluride detector to high speed X-ray CT scanner
|
Hori, Keiichi
|
|
1996
|
380 |
1-2 |
p. 397-401
5 p.
|
artikel
|
| 12 |
Applications of non-cryogenic portable EDXRF systems in archaeometry
|
Cesareo, R
|
|
1996
|
380 |
1-2 |
p. 440-445
6 p.
|
artikel
|
| 13 |
Applications of selenium-based alloys for digital radiography
|
L'Ecuyer, J.
|
|
1996
|
380 |
1-2 |
p. 493-496
4 p.
|
artikel
|
| 14 |
A realistic simulation of gamma-ray detectors
|
Manfredotti, C
|
|
1996
|
380 |
1-2 |
p. 145-147
3 p.
|
artikel
|
| 15 |
A study of the electrical and charge-collection properties of semi-insulating GaAs detectors
|
Cola, A
|
|
1996
|
380 |
1-2 |
p. 66-69
4 p.
|
artikel
|
| 16 |
Cadmium telluride small probes for gamma-ray spectrometry
|
Hage-Ali, M
|
|
1996
|
380 |
1-2 |
p. 427-430
4 p.
|
artikel
|
| 17 |
CdZnTe detectors for gamma-ray Burst ArcSecond Imaging and Spectroscopy (BASIS)
|
Stahle, C.M.
|
|
1996
|
380 |
1-2 |
p. 486-489
4 p.
|
artikel
|
| 18 |
Characterization of CdTe0.9Se0.1:Cl strip detectors
|
Fiederle, M
|
|
1996
|
380 |
1-2 |
p. 153-156
4 p.
|
artikel
|
| 19 |
Characterization of CdZnTe and CdTe:Cl materials and their relationship to X- and γ-ray detector performance
|
Verger, L
|
|
1996
|
380 |
1-2 |
p. 121-126
6 p.
|
artikel
|
| 20 |
Characterization of indium iodide detectors for scintillation studies
|
Shah, K.S
|
|
1996
|
380 |
1-2 |
p. 215-219
5 p.
|
artikel
|
| 21 |
Characterization of lead iodide for nuclear spectrometers
|
Schlesinger, T.E
|
|
1996
|
380 |
1-2 |
p. 193-197
5 p.
|
artikel
|
| 22 |
Characterization of semi-insulating GaAs for detector application
|
Rogalla, M
|
|
1996
|
380 |
1-2 |
p. 14-17
4 p.
|
artikel
|
| 23 |
Characterization of the HgI2 surface layer after KI etching
|
Ponpon, J.P
|
|
1996
|
380 |
1-2 |
p. 112-116
5 p.
|
artikel
|
| 24 |
Charge transport and signal generation in CdTe pixel detectors
|
Hamel, Louis-André
|
|
1996
|
380 |
1-2 |
p. 238-240
3 p.
|
artikel
|
| 25 |
Chemical analysis of metal impurity distribution of zone-refined mercuric iodide by ICP-AES and DSC
|
Chen, K.-T
|
|
1996
|
380 |
1-2 |
p. 53-57
5 p.
|
artikel
|
| 26 |
Committees and sponsors
|
|
|
1996
|
380 |
1-2 |
p. viii-
1 p.
|
artikel
|
| 27 |
Compact circuit for pulse rise-time discrimination
|
Jordanov, V.T
|
|
1996
|
380 |
1-2 |
p. 353-357
5 p.
|
artikel
|
| 28 |
Comparative evaluation of the temperature dependence of different noise sources in CdTe detectors
|
Chirco, P
|
|
1996
|
380 |
1-2 |
p. 127-131
5 p.
|
artikel
|
| 29 |
Comparison of HgI2, CdTe and Si (p-i-n) X-ray detectors
|
Iwanczyk, J.S
|
|
1996
|
380 |
1-2 |
p. 186-192
7 p.
|
artikel
|
| 30 |
Comparison of vertical gradient freeze bulk GaAs and custom grown vertical zone melt bulk GaAs as radiation spectrometers
|
McGregor, D.S
|
|
1996
|
380 |
1-2 |
p. 165-168
4 p.
|
artikel
|
| 31 |
Correlation of the charge collection efficiency of GaAs particle detectors with material properties
|
Berwick, K
|
|
1996
|
380 |
1-2 |
p. 46-49
4 p.
|
artikel
|
| 32 |
Criteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- and γ-ray spectroscopy
|
Bertuccio, G
|
|
1996
|
380 |
1-2 |
p. 301-307
7 p.
|
artikel
|
| 33 |
Current state-of-the-art industrial and research applications using room-temperature CdTe and CdZnTe solid state detectors
|
Eisen, Y
|
|
1996
|
380 |
1-2 |
p. 431-439
9 p.
|
artikel
|
| 34 |
CVD diamond detectors for radiation pulse characterisation
|
Foulon, F
|
|
1996
|
380 |
1-2 |
p. 42-45
4 p.
|
artikel
|
| 35 |
Damage depth profiles of shallow-implanted or compositional-graded surfaces for X-ray and γ-ray detectors
|
Konova, A
|
|
1996
|
380 |
1-2 |
p. 97-101
5 p.
|
artikel
|
| 36 |
Decay dynamics of free and trapped excitons in tetragonal mercuric iodide
|
Anderson, Richard J.M
|
|
1996
|
380 |
1-2 |
p. 88-92
5 p.
|
artikel
|
| 37 |
Deep electronic levels in high-pressure Bridgman Cd1−x Zn xTe
|
Szeles, Cs
|
|
1996
|
380 |
1-2 |
p. 148-152
5 p.
|
artikel
|
| 38 |
Defects in CdTe and Cd1−x Zn xTe
|
Hofmann, D.M
|
|
1996
|
380 |
1-2 |
p. 117-120
4 p.
|
artikel
|
| 39 |
Diamond ionisation chambers for dosimetry
|
Brambilla, A
|
|
1996
|
380 |
1-2 |
p. 446-449
4 p.
|
artikel
|
| 40 |
Digital implementation of filters for nuclear applications using the discrete wavelet transform
|
Garcia-Belmonte, G
|
|
1996
|
380 |
1-2 |
p. 376-380
5 p.
|
artikel
|
| 41 |
Discrete analog electronics for high-resistivity silicon detectors used for X-ray and γ-ray spectroscopy in whole-body monitoring
|
de Carlan, L
|
|
1996
|
380 |
1-2 |
p. 371-375
5 p.
|
artikel
|
| 42 |
1-D position sensitive single carrier semiconductor detectors
|
He, Zhong
|
|
1996
|
380 |
1-2 |
p. 228-231
4 p.
|
artikel
|
| 43 |
Editorial Board
|
|
|
1996
|
380 |
1-2 |
p. ii-iii
nvt p.
|
artikel
|
| 44 |
Electrical single-pulse optoelectronic sampling of X-ray photodetector signals
|
Nail, M
|
|
1996
|
380 |
1-2 |
p. 358-360
3 p.
|
artikel
|
| 45 |
Electrode configuration and energy resolution in gamma-ray detectors
|
Luke, P.N
|
|
1996
|
380 |
1-2 |
p. 232-237
6 p.
|
artikel
|
| 46 |
Electrodrift purification of mercuric iodide for improved gamma-ray detector performance
|
Van Scyoc, J.M
|
|
1996
|
380 |
1-2 |
p. 36-41
6 p.
|
artikel
|
| 47 |
Electronics for high resolution spectroscopy with compound semiconductors
|
Redus, R
|
|
1996
|
380 |
1-2 |
p. 312-317
6 p.
|
artikel
|
| 48 |
Electronics for pixel detectors
|
Solal, M
|
|
1996
|
380 |
1-2 |
p. 335-341
7 p.
|
artikel
|
| 49 |
Energy selective imaging systems based on monolithic CdZnTe arrays operated in a high speed counting mode
|
Polichar, R
|
|
1996
|
380 |
1-2 |
p. 323-330
8 p.
|
artikel
|
| 50 |
Experimental study of LEC GaAs detectors for X-ray digital radiography
|
Amendolia, S.R
|
|
1996
|
380 |
1-2 |
p. 410-413
4 p.
|
artikel
|
| 51 |
Formation of PdHg by reaction of palladium thin film contacts deposited onto mercuric iodide (α-HgI2) radiation detector crystals
|
Medlin, D.L
|
|
1996
|
380 |
1-2 |
p. 241-244
4 p.
|
artikel
|
| 52 |
Gamma-ray spectrometry using silicon based scintillation probes
|
Part, V
|
|
1996
|
380 |
1-2 |
p. 209-214
6 p.
|
artikel
|
| 53 |
Growth, optical and electrical characterization of HgBr1.16I0.84 single crystals
|
Daviti, M
|
|
1996
|
380 |
1-2 |
p. 62-65
4 p.
|
artikel
|
| 54 |
High energy tomography using cadmium zinc telluride detectors
|
Rossi, M
|
|
1996
|
380 |
1-2 |
p. 419-422
4 p.
|
artikel
|
| 55 |
Improved performance lead iodide nuclear radiation detectors
|
Deich, V
|
|
1996
|
380 |
1-2 |
p. 169-172
4 p.
|
artikel
|
| 56 |
Influence of CVD diamond film textures on the electrical response of radiation detectors
|
Jany, C
|
|
1996
|
380 |
1-2 |
p. 107-111
5 p.
|
artikel
|
| 57 |
Investigation of the behaviour of a mercuric iodide detector under unusual irradiation conditions
|
Ramunno, G
|
|
1996
|
380 |
1-2 |
p. 223-227
5 p.
|
artikel
|
| 58 |
Investigation on the electric field profile in CdTe by ion beam induced current
|
Manfredotti, C
|
|
1996
|
380 |
1-2 |
p. 136-140
5 p.
|
artikel
|
| 59 |
Irradiation effects on AuSi nuclear detectors by 10 MeV α-particles
|
Ohba, K
|
|
1996
|
380 |
1-2 |
p. 76-78
3 p.
|
artikel
|
| 60 |
JFET-based monolithic preamplifiers for spectrometry applications
|
Manfredi, P.F
|
|
1996
|
380 |
1-2 |
p. 308-311
4 p.
|
artikel
|
| 61 |
Large area amorphous silicon x-ray imagers
|
Street, R.A
|
|
1996
|
380 |
1-2 |
p. 450-454
5 p.
|
artikel
|
| 62 |
Large-area sub-millimeter resolution CdZnTe strip detector for astronomy
|
Macri, J.R.
|
|
1996
|
380 |
1-2 |
p. 490-492
3 p.
|
artikel
|
| 63 |
Large volume room temperature gamma-ray spectrometers from Cd x Zn1−x Te
|
Lund, J.C
|
|
1996
|
380 |
1-2 |
p. 256-261
6 p.
|
artikel
|
| 64 |
Lead iodide X-ray detection systems
|
Shah, K.S
|
|
1996
|
380 |
1-2 |
p. 266-270
5 p.
|
artikel
|
| 65 |
Leakage current studies of thick a-Si:H detectors under high electric field conditions
|
Ilie, A
|
|
1996
|
380 |
1-2 |
p. 18-22
5 p.
|
artikel
|
| 66 |
Low energy background in mercuric iodide X-ray spectrometers
|
Bao, X.J
|
|
1996
|
380 |
1-2 |
p. 58-61
4 p.
|
artikel
|
| 67 |
Low noise JFETs for room temperature x-ray detectors
|
Lund, Mark W
|
|
1996
|
380 |
1-2 |
p. 318-322
5 p.
|
artikel
|
| 68 |
Material analysis and characterization on zone refined and zone leveled vertical zone melt GaAs for radiation spectrometers
|
McGregor, D.S
|
|
1996
|
380 |
1-2 |
p. 84-87
4 p.
|
artikel
|
| 69 |
Measurement of the non-thermal bremsstrahlung emission between 30 and 200 keV with a high time-space resolution on the tokamak TORE SUPRA
|
Peysson, Y
|
|
1996
|
380 |
1-2 |
p. 423-426
4 p.
|
artikel
|
| 70 |
Measuring the bulk resistivity of CdZnTe single crystal detectors using a contactless alternating electric field method
|
De Antonis, P
|
|
1996
|
380 |
1-2 |
p. 157-159
3 p.
|
artikel
|
| 71 |
Mercuric iodide photodetector arrays for gamma-ray imaging
|
Patt, B.E
|
|
1996
|
380 |
1-2 |
p. 295-300
6 p.
|
artikel
|
| 72 |
Modelling by an analytical function of a pixellized CdTe photoconductor response
|
Gigot, J-F.
|
|
1996
|
380 |
1-2 |
p. 479-482
4 p.
|
artikel
|
| 73 |
New developments in clinical applications of CdTe and CdZnTe detectors
|
Scheiber, C
|
|
1996
|
380 |
1-2 |
p. 385-391
7 p.
|
artikel
|
| 74 |
New gamma-ray detector structures for electron only charge carrier collection utilizing high-Z compound semiconductors
|
Patt, B.E
|
|
1996
|
380 |
1-2 |
p. 276-281
6 p.
|
artikel
|
| 75 |
New possibilities for the characterization of defects in α-HgI2 crystals by synchrotron X-ray topography
|
Gastaldi, J
|
|
1996
|
380 |
1-2 |
p. 79-83
5 p.
|
artikel
|
| 76 |
Noise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technology
|
Santiard, J.C
|
|
1996
|
380 |
1-2 |
p. 350-352
3 p.
|
artikel
|
| 77 |
Novel concepts in X-ray and γ-ray detection using compound semiconductors
|
Squillante, M.R
|
|
1996
|
380 |
1-2 |
p. 160-164
5 p.
|
artikel
|
| 78 |
Performance of a high resolution CdTe and CdZnTe PIN detectors
|
Khusainov, A
|
|
1996
|
380 |
1-2 |
p. 245-251
7 p.
|
artikel
|
| 79 |
Pixellized CdTe MeV-camera for flash radiography
|
Gerstenmayer, Jean-Louis
|
|
1996
|
380 |
1-2 |
p. 462-466
5 p.
|
artikel
|
| 80 |
Preface
|
Cuzin, M
|
|
1996
|
380 |
1-2 |
p. vii-
1 p.
|
artikel
|
| 81 |
Preliminary test results from a single-sided two-dimensional detector using pMOS pixels
|
Avrillon, Sylvie
|
|
1996
|
380 |
1-2 |
p. 282-287
6 p.
|
artikel
|
| 82 |
Preliminary uranium enrichment analysis results using cadmium zinc telluride detectors
|
Lavietes, Anthony D
|
|
1996
|
380 |
1-2 |
p. 406-409
4 p.
|
artikel
|
| 83 |
Progress in developing focal-plane-multiplexer readout for large CdZnTe arrays for nuclear medicine applications
|
Barber, H.B
|
|
1996
|
380 |
1-2 |
p. 262-265
4 p.
|
artikel
|
| 84 |
Properties of gallium arsenide purified by zone refining and zone levelling
|
Moore, W.J
|
|
1996
|
380 |
1-2 |
p. 102-106
5 p.
|
artikel
|
| 85 |
Proton-induced background in LEGRI
|
Porras, E.
|
|
1996
|
380 |
1-2 |
p. 483-485
3 p.
|
artikel
|
| 86 |
Recent advances in γ- and X-ray spectrometry by means of mercuric iodide detectors
|
Ponpon, J.P
|
|
1996
|
380 |
1-2 |
p. 173-178
6 p.
|
artikel
|
| 87 |
Recent results on chemical-vapor-deposited diamond microstrip detectors
|
Bauer, C
|
|
1996
|
380 |
1-2 |
p. 183-185
3 p.
|
artikel
|
| 88 |
Resolution limits of silicon detectors and electronics for soft X-ray spectroscopy at non cryogenic temperatures
|
Pullia, A
|
|
1996
|
380 |
1-2 |
p. 1-5
5 p.
|
artikel
|
| 89 |
Response of diamond photoconductors to soft x ray in the spectral range 125 Å to 240 Å
|
Han, S
|
|
1996
|
380 |
1-2 |
p. 205-208
4 p.
|
artikel
|
| 90 |
Room temperature semiconductor detectors for safeguards measurements
|
Arlt, R
|
|
1996
|
380 |
1-2 |
p. 455-461
7 p.
|
artikel
|
| 91 |
Semi-insulating bulk GaAs as a semiconductor thermal-neutron imaging device
|
McGregor, D.S
|
|
1996
|
380 |
1-2 |
p. 271-275
5 p.
|
artikel
|
| 92 |
Sensitivity of photoconductive GaAs detectors to pulsed electrons
|
Ziegler, Lee H
|
|
1996
|
380 |
1-2 |
p. 220-222
3 p.
|
artikel
|
| 93 |
Signal processing for CdTe detectors using a fast signal digitizing technique
|
Takahashi, Hiroyuki
|
|
1996
|
380 |
1-2 |
p. 381-384
4 p.
|
artikel
|
| 94 |
Simulation and modelling of a new silicon X-ray drift detector design for synchrotron radiation applications
|
Iwanczyk, J.S
|
|
1996
|
380 |
1-2 |
p. 288-294
7 p.
|
artikel
|
| 95 |
Single-shot temporal measurement of short X-ray pulses using very fast photoconductive detectors
|
Cuzin, M
|
|
1996
|
380 |
1-2 |
p. 179-182
4 p.
|
artikel
|
| 96 |
Special nuclear materials monitoring An application of Cd x Zn1−x Te detectors
|
Olsen, R.W.
|
|
1996
|
380 |
1-2 |
p. 467-469
3 p.
|
artikel
|
| 97 |
Stability of amplification in detectors with integrated electronics
|
Bertuccio, G
|
|
1996
|
380 |
1-2 |
p. 331-334
4 p.
|
artikel
|
| 98 |
Study of trapping levels in doped HgI2 radiation detectors
|
Hermon, H
|
|
1996
|
380 |
1-2 |
p. 10-13
4 p.
|
artikel
|
| 99 |
Surface aging of HgI2 crystals studied by VASE and AFM
|
Yao, H
|
|
1996
|
380 |
1-2 |
p. 26-29
4 p.
|
artikel
|
| 100 |
The effect of elemental and hydrocarbon impurities on mercuric iodide gamma ray detector performance
|
Cross, Eilene S
|
|
1996
|
380 |
1-2 |
p. 23-25
3 p.
|
artikel
|
| 101 |
The noise reduction of silicon detectors by wafer analyses and technological procedures
|
Tykva, Richard
|
|
1996
|
380 |
1-2 |
p. 198-200
3 p.
|
artikel
|
| 102 |
Thermal treatment of CdTe surfaces for radiation detectors
|
Ozaki, T
|
|
1996
|
380 |
1-2 |
p. 141-144
4 p.
|
artikel
|
| 103 |
The use of CdTe or CdZnTe for pulse-counting and current-mode medical imaging applications
|
Heanue, J.A
|
|
1996
|
380 |
1-2 |
p. 392-396
5 p.
|
artikel
|
| 104 |
Two-dimensional photocurrent mapping of mercuric iodide detector crystals
|
Brunett, B.A
|
|
1996
|
380 |
1-2 |
p. 70-75
6 p.
|
artikel
|
| 105 |
Uniformity of Cd1 − x Zn xTe grown by high-pressure Bridgman
|
Toney, J.E
|
|
1996
|
380 |
1-2 |
p. 132-135
4 p.
|
artikel
|
| 106 |
Vertical bunch-size measurement at LEP using very fast X-ray detectors
|
Cocq, D
|
|
1996
|
380 |
1-2 |
p. 366-370
5 p.
|
artikel
|
| 107 |
X-ray diffuse scattering for evaluation of wide bandgap semiconductor nuclear radiation detectors
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X-ray imaging performances of a 2D hybrid cadmium telluride structure
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Zone melt growth of GaAs for gamma ray detector applications
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